Raman spectra of undoped and uranium doped CaF2 single crystals

Raman scattering experiments for nominally pure and uranium doped CaF2 single crystals were presented.In all crystals, the Raman active T2g vibration mode of CaF2 was observed, whose frequency shift and fullwidth at half-maximum (FWHM) broadening correspond well with defects and impurities in CaF2 lattice.Additional Raman peaks develop in nominally pure CaF2 with high etch pits density and U6+:CaF2crystals. Part of additional Raman peaks in the experimental results, which are assumed due to vibration modes from F- interstitials and vacancies, are in well agreement with the theoretical predications by employing the Green-function formulation.     

Line-shapes of localized impurity phonon modes of boron acceptors in silicon

The Raman scattering cross-section of localized phonon modes due to impurities has been measured. Interference effects between the localized phonon and electronic continuum scattering amplitudes are signalled by the onset line-shape asymmetries. Qualitative analysis of the results is given in terms of the Fano theory.     

Detection of invisible phonon modes in individual defect-free carbon nanotubes by gradient-field Raman scattering

We provide an effective method to investigate the field gradient effect in nanoconfined plasmon-matter interaction.Aligned ultralong SWNTs without defects were grown on marked substrates, followed by assembling gold nanoparticle clusters around individual nanotubes. The Raman scattering behavior of a nanotube placed in an atomic scale nanogap between adjacent nanoparticles was studied. In addition to the expected plasmon-induced Raman enhancement up to 103,the defect-free D-mode of an individual SWNT induced by gradient field is found for the first time. When the light is confined at atomic scale, gradient field Raman scattering becomes significant and dipole-forbidden phonon modes can be activated by quadrupole Raman tensor variation, indicating breakdown of the Raman selection rules.     

The influence of impurity formation on electron inelastic scattering of suspended graphene

This study reports on controlling the formation of nanoimpurities on suspended graphene to investigate the inelastic scattering of electrons using a two‐phonon Raman process. Results were analyzed by transmission electron microscopy (TEM) and scanning Raman spectroscopy in the same region of suspended graphene. The findings revealed that the area with a higher concentration of impurities shown in the TEM image corresponds directly to the area with a lower integrated intensity and a wider full width at half maximum in the Raman mapping of the 2D band and vice versa. The same trend is also apparent in the 2D′ and D + D″ bands. In conclusion, the results are explained by an increase in the electronic scattering rate due to impurities, which affects two‐phonon Raman scattering. Combining the TEM image and Raman mapping image effectively demonstrates how electron behavior is affected by the distribution of impurities in graphene systems. Copyright © 2012 John Wiley & Sons, Ltd.     

Modified cascade model of resonant Raman scattering: a case study of UV Raman scattering in Zn1−xMnxO thin films

The cascade model of inelastic resonant Raman scattering considers real electronic states in the conduction band (CB) as intermediaries to explain multiple longitudinal optical (LO) Stokes‐shifted lines in the emission spectra. In this study, we report modification in the cascade model under conditions where the scattered photons after multiple transitions have energy lower than the bandgap (E_g) and give rise to higher order n‐LO lines. The higher order n‐LO lines involve electron transition between the trap levels, which are created by impurities or defects in the forbidden energy gap, and are analogous to the real electronic states in CB, depending on the density of defects or impurities in the lattice. The presence of traps in the forbidden gap (1) acts as virtual intermediate states giving rise to higher order n‐LO modes and (2) tends to decrease the radiative recombination probability leading to quenching of the luminescence emission and line width (full‐width at half‐maximum) broadening. Ultraviolet Raman scattering in Mn‐doped ZnO (Zn_1−xMn_xO) thin films were investigated and the experimental observations analyzed in the domain of the modified cascade model. Copyright © 2011 John Wiley & Sons, Ltd.     

Raman scattering from amorphous zones in neutron irradiated silicon

A Raman scattering study of neutron irradiated silicon is presented for the first time. We have observed features in the Raman spectrum arising from amorphous zones produced in the bulk of the sample due to neutron induced defects. We relate these first order Raman modes to the crystalline vibrational density of states averaged over the Brillouin zone.     

Raman study of structural disorder in ZnO nanopowders

Raman scattering spectroscopy has been used for the characterization of zinc oxide nanoparticles obtained by mechanical activation in a high‐energy vibro‐mill and planetary ball mill. Raman modes observed in spectra of nonactivated sample are assigned to Raman spectra of the ZnO monocrystal, while the spectra of mechanically activated samples point out to the structural and stoichiometric changes, depending on the milling time and the choice of equipment. Observed redshift and peak broadening of the E₂^high and E₁ (LO) first‐order Raman modes are attributed to increased disorder induced by mechanical milling, followed by the effects of phonon confinement due to correlation length decrease. The additional modes identified in Raman spectra of activated ZnO samples are related to the surface optical phonon modes, due to the intrinsic surface defects and presence of ZrO₂as extrinsic defects introduced by milling in zirconia vials. Copyright © 2009 John Wiley & Sons, Ltd.     

Defects in crystals studied by Raman scattering

Raman studies of crystal defects are reviewed. Raman spectroscopy is a powerful technique and has been used widely for investigating disordered structures. The degree of disorder in a crystal is quantitatively evaluated in terms of the phonon correlation length. The asymmetric Raman line shapes in defective crystals such as microcrystals, ion-implanted semiconductors are well reproduced by the spatial correlation (SC) model. The effect of alloying induced-potential fluctuations on Raman scattering is also explained within the framework of the SC model. In disordered graphite, the in-plane phonon correlation length is obtained from the relative intensity ratio of the disorder induced peak. The initial lattice disordering rates and the relaxation rates of disorder are determined, using real-time Raman measurements during ion irradiation in a scale of seconds. In this way, the phonon confinement due to the local defects is observed in the kinetic manner. Localized vibrational modes of defects in crystals are also described. In particular, Raman observation of the hydrogen molecule in crystalline semiconductors is discussed in detail.     

Mechanism of strong resonant 1LO Raman scattering

The interaction of electrons with impurities and the quasi-elastic scattering of electrons by acoustic phonons highly enhances the efficiency of resonant 1 LO Raman scattering. As a result, for a wide range of parameter values the efficiency of resonant scattering becomes rather strong and does not depend on the strength of interaction of electrons with the impurities and acoustic phonons, and on the impurity concentration.     

Raman scattering studies on manganese ion-implanted GaN

This paper reports that the Raman spectra have been recorded on the metal-organic chemical vapour deposition epitaxially grown GaN before and after the Mn ions implanted. Several Raman defect modes have emerged from the implanted samples. The structures around 182 cm^-1 modes are attributed to the disorder-activated Raman scattering, whereas the 361 cm^-1 and 660 cm^-1 peaks are assigned to nitrogen vacancy-related defect scattering. One additional peak at 280 cm^-1 is attributed to the vibrational mode of gallium vacancy-related defects and/or to disorder activated Raman scattering. A Raman-scattering study of lattice recovery is also presented by rapid thermal annealing at different temperatures between 700 °C and 1050 °C on Mn implanted GaN epilayers. The behaviour of peak-shape change and full width at half maximum (FWHM) of the A₁(LO) (733 cm^-1) and E^H₂ (566 cm^-1) Raman modes are explained on the basis of implantation-induced lattice damage in GaN epilayers.     

Double resonance Raman scattering of second-order Raman modes from an individual graphite whisker

Resonant Raman scattering of second-order Raman modes from an individual graphite whisker synthesized by a high-temperature heat-treatment method at a special pressure was discussed here. The dependence of phonon frequencies on the incoming laser light and the frequency difference between Stokes and anti-Stokes scattering show their origin from double resonance Raman scattering. Our results show that all the experimental results of second-order Raman modes in graphite whiskers, such as the excitation-energy dependence on the mode frequency, the frequency shift between a second-order Raman mode and its fundamentals, and the frequency discrepancy between Stokes and anti-Stokes components of a second-order Raman mode can be well understood by double resonance Raman scattering.     

Optical properties of lithium niobate and lithium tantalate crystals with impurities and defects

The photoinduced and Raman scattering in lithium niobate and lithium tantalate crystals with impurities and defects have been studied. An exciting laser beam propagated either along the ferroelectric Z axis or perpendicular to it. The conditions for exciting transverse and longitudinal polar optical modes in Raman spectra are established. The regularities of the excitation of Raman spectra in several polarization geometries (X(ZZ)Y, Z(XX, Y Y)Z, Z(XX, Y Y)Z, X(ZX)Y, X(ZX)X and X(ZX)X) have been investigated. Additional (extra) spectral lines are interpreted as a manifestation of a biphonon enhanced by the Fermi resonance and the result of violation of selection rules for pseudoscalar modes of the A ₂ type due to the reduction of the point symmetry group caused by the presence of impurities and defects in real crystals. The conditions for exciting coherent longitudinal and transverse modes in lithium niobate and lithium tantalate single crystals upon stimulated Raman scattering are analyzed. The temperature evolution of the spectra recorded in the X(ZZ)Y geometry near the ferroelectric phase transition point is explained based on the concept of effective soft mode and analysis of the isofrequency opalescence effect. Strong photoluminescence is found in copper-doped lithium niobate crystals.     

Reverse polarized highly intense Raman transitions in Jahn-Teller and non-Jahn-Teller modes

Intensity enhancement effects in vibrational Raman spectra of electronically degenerate states are investigated. It is shown that the fundamental and overtone Raman transitions in Jahn-Teller active modes are strongly intensified via enhancement effects involving the symmetric and anti-symmetric Raman polarizability tensors. Such enhancements ensue via intensity borrowing from the Rayleigh scattering process. It is explicitly shown that the isotropic Raman polarizability tensor associated with these transitions is not subjected to enhancement effects. Thus the intense fundamental and overtone Raman transitions in the Jahn-Teller active modes will be reverse polarized (or depolarized) rather than polarized. Moreover, fundamental and overtone Raman transitions associated with vibrations which couple with Jahn-Teller active modes via mixed cross quadratic nuclear potential interactions may also be intensified and reverse polarized. The present work modifies and extends the selection rules which were established long ago by M. S. Child and H. C. Longuet-Higgins [Philos. Trans. R. Soc. London A 254, 259–294 (1961)].     

Electrical properties and Raman scattering investigation of Ag doped ZnO thin films

Ag-doped ZnO thin films were deposited on quartz glass substrates by a radio-frequency (RF) magnetron sputtering technique at room temperature (RT). The influence of Ag doping content on the electrical and Raman scattering properties of ZnO films were systematically investigated by Hall measurement system and Raman scattering spectrum. Two additional local vibrational modes (LVMs) at 230.0 and 394.5 cm^?1 induced by Ag dopant in ZnO:Ag films were observed by Raman analyses at RT, corresponding to Ag atoms located at O sites (LV M_Zn?Ag) and Zn sites (LV M_Ag?O) in ZnO lattice. Moreover, we further studied the effect of donor Ag_O and acceptor Ag_Zn defects on the electrical properties of ZnO:Ag films. The results indicate that O-rich condition is preferred to suppress the formation of Ag_O defects and enhance Ag_Zn defects. The p-type ZnO:Ag film was achieved by properly optimizing the annealing conditions under O-rich condition.     

KDP晶体拉曼散射角度特性

利用群理论详细分析了磷酸二氢钾(KDP)晶体的拉曼振动模式,得出了其拉曼振动模的归类。并采用拉曼光谱仪测量了Z切退火KDP晶体X(ZZ)珡X,Z(XY)珚Z和Y(XY)X三种散射配置和未退火KDP晶体Z(XY)珚Z配置下的拉曼光谱。根据拉曼选择定则得出X(ZZ)珡X,Z(XY)珚Z和Y(XY)X散射配置下的拉曼峰分别对应A1,B2(LO),B2(TO)对称类振动模,但在Z(XY)珚Z配置下的拉曼光谱中除了B2模,还观察到了A1模,而在Y(XY)X配置下的拉曼光谱中只有B2模,且退火和未退火晶体Z(XY)珚Z配置下的拉曼光谱无明显差别,此结果表明KDP晶体的对称性降低,在背向散射时A1模也具有角度特性,但与晶体的内应力无关,这是由KDP晶体内部结构决定的。     

压电晶体拉曼散射的统一量子论

发展了拉曼散射的一个广义量子理论，它能同时说明非极性模和极性模的作用.在场论中， 光被纵光学和横光学模的拉曼散射能在一个统一的理论框架内描述. 关键词： 拉曼散射 声子 量子场论     

GaAs/AlAs超晶格的近共振喇曼散射研究

本文介绍GaAs/AlAs超晶格的室温近共振喇曼散射测量结果。由于超晶格中Fr?hlich相互作用的共振增强效应,GaAs LO声子偶模的散射得到了很大的增强。和前人的结果一样,在偏振谱我们观察到了偶模。但和前人的结果不同,在退偏振谱中我们观察到的是奇模,而不是偶模。从而证明了在近共振条件下LO声子限制模仍遵从与非共振时一样的选择定则。二级喇曼散射实验结果表明,在偏振谱中二级谱是由两个偶模组合而成,而在退偏振谱中的二级谱与前人的结果不同,由一个奇模与一个偶模组合而成。上述结果与最近提出的黄朱模型的预言是一 关键词：     

GaN外延层中的缺陷对光学性质的影响

用金属有机化合物气相外延（ＭＯＶＥＰ）方法生长具有不同表面形貌的非掺杂ＧａＮ，并对部分样品的外延层表面进行镜面加工．用阴极射线发光、光散射和拉曼散射方法观察ＧａＮ中深能级发光、缺陷散射光分布和拉曼散射光频移．结果表明，缺陷不但影响ＧａＮ的发光和光散射，而且影响拉曼频移     

Raman scattering in GeSi alloys

Room temperature Raman spectra are reported for polycrystalline GeSi alloys as a function of composition. The frequencies and linewidths of the three main peaks show some disagreement with previously reported work; the results are discussed within the theories of local and resonance modes of impurities, where possible. Minor scattering peaks and second-order spectra, as well as anomalous behavior in several inhomogeneous samples, are also reported and discussed.     

基于离子注入技术的ZnMnO半导体材料的制备及光谱表征

通过离子注入技术制备了ZnMnO半导体材料，研究离子注入剂量与退火对材料光谱性质的影 响.Raman光谱研究发现，575cm^-1处声子模展宽是由高剂量Mn注入引起的缺陷所 致，退火样品528cm^-1振动模来自Mn相关的杂质振动.室温光致发光谱表明，退 火对高剂量注入样品的可见发光带有增强作用. 关键词： ZnMnO 离子注入 Raman光谱 室温光致发光