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1.
The paper presents results of studies of the fast ion emission from two plasma facilities: PF-1000 and PF-II. The measurements were carried out mainly with solid-state nuclear track detectors (SSNTDs). To register ion mass- and energy-spectra, obtained when primary ion beams are deflected by magnetic and electric fields of a Thomson-type spectrometer, the SSNTDs plates were installed inside the analyzer. To measure ion angular distributions the SSNTDs were located within the main discharge chamber, at different angles to the electrode axis. The SSNTDs were also applied to register ion beam images formed within an ion pinhole camera, and to determine a spatial location of the fast ion sources.  相似文献   

2.
The paper reports on measurements of pulsed plasma-ion streams, as performed with the selected solid-state nuclear track detectors (SSNTD). The ion-beams were produced by an experimental device (RPI-IBIS) equipped with coaxial electrodes (each made of molybdenum rods) and a fast-acting gas valve. The device was operated at 30 kV/44 kJ, with puffing of pure hydrogen or deuterium. The spatial structure of the ion beams was studied with pinhole cameras equipped with replaceable detectors, and ion mass- and energy-spectra were measured with a Thomson spectrometer. To analyse low-energy ions (below the energy thresholds of LR 115A and PM-355 SSNTD) an additional accelerating system was applied. It was observed that ions of energy are emitted in bunches, and the ion flux amounts to at a distance of 30 cm from the electrodes outlet. Energy spectra of protons and deuterons ranged from about 30 keV to about 400 keV. The ion distributions, as recorded by means of the PM-355 and LR 115A detectors, are similar.  相似文献   

3.
The paper describes experimental studies of the corpuscular emission from fast Z-pinch discharges, which were performed within the CAPEX capillary pinch facility in Prague, Czech Republic. Time-integrated measurements were carried out with an ion pinhole camera equipped with CR-39 nuclear track detectors. Irradiated detectors were etched at the standard conditions, and developed tracks were analysed with an optical microscope coupled with a CCD camera. It was found that the fast capillary discharges emit strong corpuscular streams. On the basis of the optical analysis of the etched detectors it was estimated that the time-integrated particle flux, at the distance of 20 cm from the collimator outlet, was about 3.5×107 particles/cm2/pulse. Particular attention was paid to analysis of ion-track photos, which were obtained by means of an electron microscope. Details of the ion micro-craters have been observed in the photos of fractures of the CR-39 detectors after their 7 h etching.  相似文献   

4.
Helium ion beam profile, angular and iso-ion beam distributions in 4 kJ Amirkabir plasma focus (APF) device were effectively observed by the unaided eyes and studied in single 1 mm-thick large-diameter (20 cm) polycarbonate track detectors (PCTD). The PCTDs were processed by 50 Hz–HV electrochemical etching using a large-size ECE chamber. The results show that helium ions produced in the APF device have a ring-shaped angular distribution peaked at an angle of ∼±60°±60° with respect to the top of the anode. Some information on the helium ion energy and distributions is also provided. The method is highly effective for ion beam studies.  相似文献   

5.
The DIAS-ESTEC Ultra Heavy Cosmic Ray Experiment (UHCRE) on the Long Duration Exposure Facility, collected approximately 3000 cosmic ray nuclei with Z>65 in the energy region E>1.5 GeVnucleon−1 during a six year exposure in Earth orbit. The entire accessible collecting area of the solid state nuclear track detector (SSNTD) array has been scanned for actinides, yielding a sample of 30 from an exposure of ≈150 m2 sryr. The UHCRE experimental setup is described and the observed charge spectrum presented. The current best value for the cosmic ray actinide relative abundance, (Z>88)/(74Z87), is reported.  相似文献   

6.
ABSTRACT

Crystalline silicon oxy-nitride (SiON) composite films are deposited on Si substrate for multiple (5, 15, 25 and 50) focus shots (FS) by plasma focus device. The X-rays diffraction patterns reveal the development of various diffraction peaks related to Si, Si3N4, and SiO2 phases which confirms the formation of SiON composite film. The intensity of Si3N4 (1 0 2) plane is linearly increased with the increase of FS. The Si3N4 (1 0 2) phase does not nucleate for 5 FS. Raman analysis confirms the formation of β–Si–N phase. Raman and Fourier transform infrared spectroscopy analysis reveals that the strength of chemical bonds like Si–N, Si–O formed during the deposition process of SiON composite films is associated with the bonds intensity which in turn depends on the number of FS. The field emission scanning electron microscopic analysis reveals that the surface morphology like size, shape and distribution of micro/nano-dimensional particles, film compactness and the formation of micro-rods, micro-teethes and micro-tubes of SiON composite films is entirely associated with the rise in substrate surface transient temperature which in turn depends on the increasing number of FS. The EDX spectrum confirms the presence of Si (22.5?±?4.7 at. %), N (13.4?±?4.5 at. %) and O (54.7?±?11.3 at. %) in the SiON composite film. The thickness of SiON composite film deposited for 50 FS is found to ~15.47?µm.  相似文献   

7.
Various factors influencing ion mixing efficiency are considered. It is established that the energy transfer from ions and primary knocked-on atom films to subsequent displacement cascades underlies the penetration of atoms from multilayer films into a polycrystalline substrate. The penetration of implanted atoms to great depths is in this case determined by the defect density, the radiation induced migration of the implanted atoms, and their interaction with the atoms of the matrix. All of these factors can be described in terms of the isotropic mixing model. It is shown that when doped by atoms from multilayer films, gradient layers form that are determined by the range of radiation in the substrate of the atoms to be implanted and their migration under irradiation by an ion beam with a wide range of energies.  相似文献   

8.
Data on the distribution of Be, Al, Ti, Fe, Cu, Zr, Mo, and W atoms implanted in oxide film on metal substrates by ion mixing under the action of He+ and Ar+ ion beams with a broad energy spectrum, with average energy of 10 keV, and with radiation doses up to 1 × 1021 ion/cm2 are presented. It is shown that layers with different concentration gradients of implanted atoms form in a thin oxide layer due to simultaneous implantation, but their concentration decreases dramatically to the background value at the oxide-metal interface. Analysis of experimental data suggests that the migration of implanted atoms takes place by means of the diffusion mechanism and is determined by the parameters of physicochemical interaction of implanted atoms with substrate atoms.  相似文献   

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