LiF晶体F3+色心的实验研究

本文从实验上系统地研究了在不同条件下电子束辐照LiF晶体所形成的F₃⁺色心的光学特点。并且由荧光光谱分析了F₃⁺心和F₂心,的相对密度关系。实验表明,辐照温度对于色心的形成和密度的相对大小起着关键的作用。主要实验结果包括:1)在液氮温度下辐照,然后在暗处加热至室温可形成高密度的F₃⁺心,表现在发射光谱中F₃⁺心荧光占绝对优势。吸收光谱表明没有N心和R心。2)由动力学荧光谱可以看到低温辐照的样品在F₂⁺心衰变的同时,F₃⁺心密度迅速增加。而室温辐照的样品则是F₂心,与F₃⁺心的密度以近似相等的速率增加。3)详细观察了F₃⁺心530nm荧光激发带与F₂心670nm荧光激发带半宽度的变化和双峰结构。由此对M吸收区的发光特点作了解释。 关键词：     

(OH)-离子对F2+心的稳定作用

基于我们的实验结果,本文讨论了(OH)^-离子在LiF晶体中对F₂⁺心的稳定作用,给出了样品在室温下放置九个月时,其中的F₂⁺心吸收峰,此时F₂⁺心仍达到实现激光振荡所要求的浓度。 关键词：     

H1+,H2+,H3+和He,Ne,Ar碰撞过程中的巴耳末系Hα,Hβ,Hγ发射

实验利用TN-1710光学多道分析系统(OMA),对H₁⁺,H₂⁺,H₃⁺和He,Ne,Ar碰撞过程中产生的巴耳末系H_α,H_β,H_γ发射进行了测量,入射离子H₁⁺,H₂⁺,H₃⁺的 关键词：     

BaFBr:Eu2+中的新型色心及其光激励发光

本文报导了BaFBr:EU²⁺晶体中的新型色心,即F₂,F₃和F₄心.F₂、F₃和F₄的吸收带分别位于670—715nm,810—900nm和970—995nm.它们是由F心的凝聚作用而形成的缔合中心.由于这些色心比F心稳定,且它们的吸收带偏离Eu²⁺的发射波长(390nm)更远,故更适合于BaFBr:Eu²⁺光激励发光的研究和开发.     

钙钛矿型晶体A(B1/31B2/32)O3中的有序-无序相变

本文利用原子集团变分方法,讨论了A⁺²(B_1/3⁺²B_2/3⁺⁵)O₃系统中有序-无序相变,指出在此系统中相互作用能参数对形成(B_2/3⁺²B_1/3⁺⁵)_1/2:B_1/2⁺⁵=1:1的混合型有序畴和B_{1/3关键词：}     

四氟化碳分子电离解离过程中的异构化动力学

采用离子动量成像谱仪研究了能量为1.0 ke V的电子束碰撞条件下CF₄分子的解离动力学.实验上,对解离离子的三维动量进行了成像测量,通过离子飞行时间关联谱识别了CF₄²⁺异构化生成F₂⁺分子的两个通道:F₂⁺+CF₂⁺与CF⁺+F₂⁺+F,得到了两个通道的离子动能及动能释放分布.对于其中的三体解离通道,我们进一步采用Dalitz图与Newton图等三体动力学分析方法对解离碎片的动量关联进行了分析.该通道以两个带电离子的背对背出射为主,中性的F原子作为旁观者只得到极小的反冲动量.     

CaMoO4：Eu3+,Bi3+,Li+红色荧光粉的共沉淀制备与表征

采用共沉淀法合成了红色荧光粉Ca_0.75MoO₄：Eu_0.25³⁺、Ca_0.75MoO₄：Eu_0.25-x³⁺,Bi_x³⁺及Ca_0.5MoO₄：Eu_0.25-2x³⁺, Bi_x³⁺,Li_0.25+x⁺,并采用X射线衍射(XRD)、拉曼光谱,扫描电镜(SEM)和荧光光谱(PL)测定分析了其结构形貌特征及发光性能。结果表明：制备的CaMoO₄：Eu³⁺,Bi³⁺,Li⁺红色荧光粉为白钨矿结构,颗粒尺寸约为0.5~1 μm。掺杂Bi³⁺的Ca_0.75MoO₄：Eu_0.25-x³⁺,Bi_x³⁺的相对发光强度明显高于未掺Bi³⁺的Ca_0.75MoO₄：Eu_0.25³⁺荧光粉。Bi³⁺离子的掺杂将吸收来的能量传递给激活离子Eu³⁺,起到了能量传递的作用。当Bi³⁺掺杂量为x=0.005时,在395 nm激发下,主发射峰在616 nm处的相对发光强度最大,但掺杂浓度过高时会出现浓度猝灭现象。另外,电荷补偿剂的掺入能够解决材料中因同晶取代引起的电荷不平衡的问题,以Li⁺作电荷补偿剂、Eu³⁺和 Bi³⁺共掺合成的Ca_0.5MoO₄：Eu³⁺_0.23,Bi_0.01³⁺,Li⁺_0.26红色荧光粉的发光性能强于Ca_0.75MoO₄：Eu_0.25³⁺、Ca_0.5MoO₄：Eu_0.25³⁺, Li_0.25⁺及Ca_0.75MoO₄：Eu_0.24³⁺,Bi_0.01³⁺。     

C42+的几何构型和Jahn Teller效应

用从头计算法QCISD/6-311G得到了C₄²⁺分子的10种不同的几何构型,其中包括C_s,C_∞v,C_2v,D_2h,D_∞h,D_4h,D_2d,C_3v等不同的构型.计算表明C₄²⁺的T_d构型不能稳定存在,详细讨论了T_{d 关键词： 几何构型 4}²⁺')" href="#">C₄²⁺ Jahn Teller效应     

阴离子取代合成Sr3LaAxV3-xO12:Eu3+(A=Mo,W)白光荧光粉

通过高温固相法合成Sr₃LaA_xV_3-xO₁₂:Eu³⁺（A=Mo,W）荧光粉,利用MoO₄^2-和WO₄^2-取代基质中部分VO₄^3-,改变基质组成和结构,进而影响基质和激活剂Eu³⁺离子的发光性能。采用X射线衍射（XRD）、扫描电子显微镜（SEM）和荧光分光光度计对所合成样品的物相、形貌、荧光性能及荧光寿命进行表征。研究表明,MoO₄^2-和WO₄^2-的部分掺杂对基质发光位置和强度均有影响,能明显减弱VO₄^3-的发光,但对Eu³⁺离子发光影响不大,添加电荷补偿剂F^-可以加强VO₄^3-对Eu³⁺离子的能量传递。通过调整基质VO₄^3-发光和Eu³⁺离子发光,可以得到单一基质的白光荧光粉。初步探讨了阴离子掺杂对Eu³⁺离子红光发射增强的机理。     

磷分子离子(P2+)注入硅的损伤行为

本文研究了不同能量(5—600keV)和不同剂量(10¹⁴-10¹⁶atom/cm²)下的P₂⁺和P⁺注入〈100〉单晶硅后的损伤及退火行为。实验结果表明,P₂⁺注入所产生的损伤总是大于P⁺注入所产生的损伤。由移位效率之比N_D^*(mol)/2N_D^*(atom)所表征的分子效应随入射能量的改变而变化并在100keV(P₂⁺),50keV(P⁺)处达到极大值。P₂⁺与P⁺注入的样品,退火后的载流子分布也有某些区别。我们认为,产生这些分子效应的基本原因是位移尖峰效应,但当入射离子的能量较高时,还应该考虑离子、靶原子之间的多体碰撞效应的贡献。 关键词：     

(F2+)A centers in lithium-doped KCl

Optical properties of the lithium (F₂⁺)_A center are reported and compared to those of the sodium (F₂⁺)_A and the intrinsic F₂⁺ centers.     

First-principles study on electronic structures of BaWO4 crystals containing F-type color centers

The electronic structures of BaWO₄ crystals containing F-type color centers are studied within the framework of the fully relativistic self-consistent Dirac-Slater theory, using a numerically discrete variational (DV-Xα) method. It is concluded that F and F⁺ color centers have donor energy level in the forbidden band. The optical transition energies are 2.449 and 3.101 eV, which correspond to the 507 and 400 nm absorption bands, respectively. It is predicted that 400-550 nm absorption bands originate from the F and F⁺ color centers in BaWO₄ crystals.     

Ab initio calculations of electronic structures of SrMoO4 crystals containing F and F color centers

The electronic structures of SrMoO₄ crystals containing F and F⁺ color centers with the lattice structure optimized are studied within the framework of the fully relativistic self-consistent Dirac–Slater theory, using a numerically discrete variational (DV-Xα) method. From the calculation, it is concluded that F and F⁺ color centers have donor energy level in the forbidden band. The electronic transition energies from the donor level to the bottom of the conduction band are 1.855 eV and 2.161 eV, respectively, which correspond to the 670 nm and 575 nm absorption bands. It is predicted that the 670 nm and 575 nm absorption bands originate from the F and F⁺ centers in SrMoO₄ crystals.     

CaWO4晶体中F型色心电子结构的研究

运用相对论的密度泛函离散变分法(DV-Xα)研究了CaWO₄晶体中F型色心的电子结构. 计算结果表明，F和F⁺心在禁带中引入了新的施主能级；分析了晶体内可能存在的光学跃迁模式，并通过过渡态的方法计算了F，F⁺心跃迁到导带底的能量分别为1.92eV和2.42eV. 因此，从理论上推断了F和F⁺心在CaWO₄晶体中可能引起650nm和515nm的吸收，由此说明CaWO₄晶体中650nm和515nm吸收带起源于晶体中的F和F⁺心. 关键词： 4晶体')" href="#">CaWO₄晶体 +心')" href="#">F和F⁺心 DV-Xα     

Adsorption-desorption studies using ESD of CCl2F2, C2H2F2 and C2F6 on tungsten

The behavior of the desorbing F⁺ ion current from electron bombarded CCl₂F₂, C₂H₂F₂ and C₂F₆ adsorbed on tungsten has been used to investigate the processes of adsorption and desorption of these gases. For tungsten near room temperature, measurements of the F⁺ ion current as a function of electron bombardment time indicated very similar or even identical F⁺-yielding adsorbed species resulting from adsorption of either CCl₂F₂ or C₂H₂F₂ and widely different species from C₂F₆. Cl⁺ ions were also observed to desorb from CCl₂F₂ ad-layers. The behavior of the Cl⁺ ion current with time during electron bombardment indicated electronic conversion between adsorbed binding modes. Complementary investigations on the interaction of CCl₂F₂, C₂H₂F₂ and C₂F₆ with tungsten were carried out by thermal desorption experiments in which the F⁺ ion signal was used to observe the coverage decrease of the F⁺-yielding species. The experiments were performed at tungsten temperatures in the 1200–1600 K range. It was concluded that the F⁺-yielding adsorbed species from CCl₂F₂ and C₂H₂F₂ were strongly bound to the tungsten surface. The F⁺-yielding species from C₂F₆ were found to be weakly bound. From a comparison of the ESD and thermal desorption results, the possibility of dissociative adsorption as well as the nature of the adsorbed species is discussed.     

Luminescence and radiation-induced color centers in anion-defective alumina crystals after high-dose irradiation

A method of UV spectroscopy was used to measure photoluminescence (PL) spectra and photoluminescence excitation (PLE) spectra in anion-defective alumina crystals exposed to high doses of gamma-radiation. An additional emission band in the range of 1.6–2.75 eV appears in the exposed crystals. Aggregate F₂-type centers in different charge states are responsible for this band. It was found that growing intensity of PL aggregate centers occurs at doses corresponding to saturation of dose response and is accompanied by a sharp drop in the intensity of F⁺-band in the PL spectrum resulting from combination of F⁺-centers into aggregates. Uncharged F₂-centers are formed when electrons are trapped by F₂⁺ and F₂²⁺-centers. The main role of F⁺-centers in radiation-induced transformations of color centers under high-dose irradiation of anion-defective alumina crystals was indicated.     

First-principles study on the origin of optical transitions to be associated with F colour centers for PbWO4 crystals

The electronic structures of PbWO₄ crystals containing F type color centers with the lattice structure optimized are studied within the framework of the fully relativistic self-consistent Direc–Slater theory, using a numerically discrete variational (DV-Xα) method. The calculated results show that F and F⁺ centers have donor energy level in forbidden band. Their optical transition energy are 1.84 eV, 2.21 eV, respectively, which corresponds to the 680 nm, 550 nm absorption bands. It predicts that the 680 nm, 550 nm absorption bands originate form the F and F⁺ centers in PbWO₄ crystals.     

Color center production by femtosecond-pulse laser irradiation in fluoride crystals

Color centers are lattice vacancy defects trapping electrons or holes. They are easily created in single crystals by irradiation with ionizing radiation. We report the production of color centers in LiF and LiYF₄ single crystals by ultrashort high-intensity laser pulses (60 fs, 12.5 GW). An intensity threshold for color center creation of 1.9 and 2 TW/cm² was determined in YLF and LiF, respectively, which is slightly smaller than the continuum generation threshold. Due to the high energy density of the coherent radiation of the focused laser beam, we were able to identify a large amount of F centers, which gave rise to aggregates such as F₂, F ₂ ⁺ , and F ₃ ⁺ . The proposed mechanism of formation is based on multiphoton excitation, which also produces short-lived F ₂ ⁺ centers. It is also shown that it is possible to write tracks in the LiF crystals with dimensional control.