All-fiber passively mode-locked laser oscillator at 1.5 microm with watts-level average output power and high repetition rate

We report on a passively mode-locked all-fiber laser oscillator at 1.5 microm based on heavily doped phosphate-glass active fiber. An active fiber only 20 cm long is sufficient to produce as much as 2.4 W of average output power directly from the oscillator. The width of the mode-locked pulses varies from 8 ps at the lowest output power in the mode-locked state to 44 ps at the highest power. Our picosecond laser oscillator features a high repetition rate of 95 MHz and high peak pulse power of approximately 540 W. The oscillator combines the convenience of all-fiber construction with power performance that was previously achievable only with mode-locked bulk-optic laser oscillators or more complex systems involving fiber amplifiers.     

INVESTIGATION ON 16 W ULTRAHIGH FREQUENCY CW MODE-LOCKED Nd: YAG LASER

The cavity configurations designing and the experimental results of a 200MHz CW actively mode-locked Nd:YAG laser are reported. Arid 26W CW output and 16W CW mode-locked output power were obtained at a single lamp pumped power of 3.5kW, with pulse duration 100 ps.     

Femtosecond high-power spontaneous mode-locked operation in vertical-external cavity surface-emitting laser with gigahertz oscillation

We realize a femtosecond high-power spontaneous mode-locked operation with gigahertz oscillation in a vertical-external cavity surface-emitting laser under the condition of eliminating the internal and external unwanted reflection. We find that the reflectivity of the output coupler has a significant influence not only on the output power but also on the output pulse duration. With an incident pump power of 20 W, we have achieved 2.35 W of average output power with 778 fs pulse duration at a repetition rate of 2.17 GHz. The shortest pulse duration was 654 fs at an average output power of 0.45 W.     

200 MHz CW mode-locked KTP intracavity frequency-doubled Nd:YAG laser

Experimental results of 200 MHz CW actively mode-locked KTP two-pass in-tracavity frequency-doubled Nd:YAG laser are reported.The primary factors influencingthe continuous-wave frequency-doubled conversion efficiency are analyzed.High efficiencylaser output was achieved by L-type folded-arm-cavity two-pass frequency-doubling.15 Waverage mode-locked power and 1.5W average mode-locked SHG green light output were ob-tained at 3.5kW single lamp input power respectively.     

基于石墨烯的1 064 nm连续锁模超短脉冲激光器

介绍了利用沉积在增透镜上的石墨烯薄膜作为可饱和吸收体、808 nm激光二极管端面泵浦Nd∶YVO4晶体的1 064 nm连续锁模激光输出特性。采用W型折叠谐振腔结构,在808 nm泵浦功率为8.0 W时,有稳定的连续锁模脉冲输出,平均输出功率达到185 mW;当抽运功率增加到16.0 W时,获得了中心波长1 063.4 nm、脉冲宽度为518 fs、重复频率为66.7 MHz、最大平均输出功率为323 mW的百飞秒量级超短脉冲激光输出。实验结果表明:石墨烯具有优良的可饱和吸收性,在1 064 nm波段能够实现高功率、百飞秒量级连续锁模脉冲激光输出。     

Diode-pumped passively Q-switched mode-locked Nd:LuVO4 laser with a semiconductor saturable absorber mirror

We present a compact passively Q-switched mode-locked Nd:LuVO₄ laser run in a Z-type folded cavity with semiconductor saturable absorber mirror (SESAM). The repetition rates of the passively Q-switched pulse envelope ranges from 22.99 to 141.18 kHz as the pump power increased from 2.372 to 8.960 W. The repetition rates of mode-locked laser pulses in the Q-switched pulse envelope has 111 MHz determined by the cavity length and the mode-locked pulse duration is evaluated to be 257 ps. An average output power of 823.5 mW is achieved at the pump power of 8.96 W, corresponding to an optical conversion efficiency of 9.2%.     

Diode-pumped femtosecond Yb:KGd(WO(4))(2) laser with 1.1-W average power

We demonstrate what is to our knowledge the first mode-locked Yb:KGd(WO(4))(2) laser. Using a semiconductor saturable-absorber mirror for passive mode locking, we obtain pulses of 176-fs duration with an average power of 1.1 W and a peak power of 64 kW at a center wavelength of 1037 nm. We achieve pulses as short as 112 fs at a lower output power. The laser is based on a standard delta cavity and pumped by two high-brightness laser diodes, making the whole system very simple and compact. Tuning the laser by means of a knife-edge results in mode-locked pulses within a wavelength range from 1032 to 1054 nm. In cw operation, we achieve output powers as high as 1.3 W.     

全光纤高功率被动锁模掺铥光纤激光器

利用非线性光环形镜(NOLM)的可饱和吸收特性实现了可自启动的2μm全光纤高能量被动锁模掺铥光纤激光器。当泵浦功率大于3W时,激光器工作在连续或不稳定脉冲运转状态;泵浦功率达到4.69W后,输出为自启动锁模脉冲,重复频率4.26MHz,中心波长2 061.5nm,光谱半极大宽度18.1nm,平均输出功率8.8mW;继续增加泵浦功率到最大值7.56W,可以得到中心波长2 062.2nm、光谱半极大宽度17.1nm、斜率效率为6.2%、脉冲宽度和能量分别为424fs和65.6nJ的稳定锁模脉冲。这是目前已报道的在未经放大情况下脉冲能量最高的2μm锁模脉冲光纤激光器。     

980-nm all-fiber mode-locked Yb-doped phosphate fiber oscillator based on semiconductor saturable absorber mirror and its amplifier

A 980-nm semiconductor saturable absorber mirror(SESAM) mode-locked Yb-doped phosphate fiber laser is demonstrated by using an all-fiber linear cavity configuration. Two different kinds of cavity lengths are introduced into the oscillator to obtain a robust and stable mode-locked seed source. When the cavity length is chosen to be 6 m, the oscillator generates an average output power of 3.5 m W and a pulse width of 76.27 ps with a repetition rate of 17.08 MHz. As the cavity length is optimized to short, 4.4-m W maximum output power and 61.15-ps pulse width are produced at a repetition rate of 20.96 MHz. The output spectrum is centered at 980 nm with a narrow spectral bandwidth of 0.13 nm. In the experiment, no undesired amplified spontaneous emission(ASE) nor harmful oscillation around 1030 nm is observed. Moreover,through a two-stage all-fiber-integrated amplifier, an output power of 740 m W is generated with a pulse width of 200 ps.     

Q-switched and mode-locked diode-pumped Nd:YVO4 laser with an intracavity composite semiconductor saturable absorber

We have demonstrated a passively Q-switched and mode-locked Nd:YVO₄ laser with an intracavity composite semiconductor saturable absorber (ICSSA). Stable Q-switched and mode-locked pulses with Q-switched envelope pulse duration of 180 ns and pulse repetition rate of 72 KHz have been obtained. The maximum average output power was 1.45 W at 8 W incident pump power. The repetition rate of the mode-locked pulses inside the Q-switched envelope was 154 MHz. Experimental results revealed that this ICSSA was suitable for Q-switched and mode-locked solid-state lasers.     

Simultaneous Q switching and mode locking with narrow envelope width in a microchip Nd:YVO4 laser with a composite semiconductor absorber

By using a composite semiconductor absorber and an output coupler, we demonstrated a Q-switched and mode-locked diode-pumped microchip Nd:YVO₄ laser. With a 350-μm-thick crystal, the width of the Q-switched envelope was as short as 12 ns; the repetition rate of the mode-locked pulses inside the Q-switched pulse was more than 10 GHz. The average output power was 335 mW at a maximum pump power of 1.6 W. Q-switched envelope widths of 21 and 31 ns were also achieved with crystals 0.7 and 1.0 mm thick, respectively.     

High-power diode-pumped mode-locked Yb:YAG ceramic laser

A high-power diode-pumped passively mode-locked Yb:YAG ceramic laser was demonstrated. An average output power of 3.80W with a pulse duration of 433 fs at a repetition rate of 90.9MHz was obtained at a wavelength of 1050 nm using a 2% output coupler. A peak power of 96.5kW was also obtained. To the best of our knowledge, these are the highest reported average power and peak power for a diode-pumped mode-locked Yb:YAG ceramic laser.     

High power passively mode-locked Nd:YVO<Subscript>4</Subscript> laser using graphene oxide as a saturable absorber

We report on a passively mode-locked Nd:YVO₄ laser using a novel graphene oxide saturable absorber fabricated by vertical evaporation method. An 880 nm LD pump source was used to reduce the thermal load of the laser crystal. At the pump power of 7.4 W, 1.2 W average output power of continuous wave mode-locked laser with optical conversion efficiency of 16.2% was achieved. To the best of our knowledge, this is the highest output power of passively mode-locked solid-state laser using graphene oxide saturable absorber. The repetition rate of passively mode-locked pulse was 88 MHz with the pulse energy of 13.6 nJ.     

532-nm picosecond pulse generated in a passively mode-locked Nd:YVO_4 laser

A diode-pumped continuous-wave （CW） mode-locked Nd：YVO4/KTP green laser with semiconductor saturable absorber mirror （SESAM） is demonstrated. The maximum output power of CW mode-locked green laser is obtained to be 552 mW at the incident pump power of 7.25 W, corresponding to an opticai-optical conversion efficiency of about 7.6%. The 532-nm CW mode-locked pulse duration is estimated to be about 8.4 ps with the repetition rate of 87 MHz.     

被动谐波锁模Er3+/Yb3+共掺双包层光纤环形腔激光器

 为了实现高重复频率和高功率的光脉冲,实验采用Er³⁺/Yb³⁺共掺双包层光纤作为增益介质,稳定的中心波长为976 nm的高功率半导体激光器作为泵浦源,利用非线性偏振旋转锁模技术,得到稳定的自起振锁模光脉冲。当泵浦功率为2.4 W时,激光器输出重复频率为8.829 MHz的连续锁模光脉冲,平均输出功率为52.5 mW,自起振锁模泵浦阈值功率为0.6 W,并观测到了稳定的高阶谐波锁模、调Q和调Q-锁模光脉冲输出。     

4-ps passively mode-locked Nd:Gd0.5Y0.5VO4 laser with a semiconductor saturable-absorber mirror

We have demonstrated a passively mode-locked diode end-pumped all-solid-state laser, which is composed of a Nd:Gd0.5Y0.5VO4 crystal and a folded cavity with a semiconductor saturable-absorber mirror grown by metal-organic chemical-vapor deposition. Stable cw mode locking with a 3.8-ps pulse duration at a repetition rate of 112 MHz was obtained. At 13.6 W of the incident pump power, a clean mode-locked fundamental-mode average output power of 3.9 W was achieved with an overall optical-to-optical efficiency of 29.0%, and the slope efficiency was 38.1%.     

Diode-end-pumped passively mode-locked Nd:LuVO4 laser with a semiconductor saturable-absorber mirror

A diode pumped passively mode-locked Nd:LuVO₄ laser with a semiconductor saturable-absorber mirror (SESAM) is demonstrated. The mode-locked pulses have a pulse duration of about 8.8 ps and a repetition rate of 157 MHz. Under an absorbed pump power of 12 W a maximum output power of 3.71 W is obtained, which gives an optical conversion efficiency of 31%. Our results show that Nd:LuVO₄ is a promising gain medium for the high power mode-locked solid-state lasers.     

Fabrication of aligned single wall carbon nanotube absorbers for high power passive mode-locked Nd:GdVO<Subscript>4</Subscript> laser

Using the vertical evaporation technique we fabricated saturable absorbers by transferring the water-soluble single wall carbon nanotubes (SWCNT) onto a hydrophilic quartz substrate. The fast recovery times of the absorber were measured to be 136 and 790 fs. The modulation depth of the absorber was about 2%. Passive mode-locked Nd:GdVO₄ laser using such an absorber was demonstrated. The continuous wave mode-locked pulses with the pulse duration of 12.4 ps and the repetition of 120 MHz were achieved. The maximum average output power of the mode-locked laser is 2.4 W at the pump power of 13 W. Such kind of absorber has potential to be put into practical use for high power solid-state laser mode locking.     

7.6-W diode-pumped femtosecond Yb:KGW laser

We have demonstrated a high power diode-pumped mode-locked femtosecond Yb:KGW laser with semiconductor saturable absorber mirror(SESAM). By using an output coupler with 10% transmittance, the laser delivered 160-fs pulses with average output power of 7.6 W at a repetition rate of 78 MHz, corresponding to pulse energy of 97 nJ and peak power of 606 kW.     

5.1-ps passively mode-locked Nd:Gd0.42Y0.58VO4 laser with a LT-GaAs absorber

We propose a diode end-pumped passively mode-locked Nd: Gd0.42 Y0.58 VO4 (Nd: GdYVO4) laser at 1064nm using a GaAs absorber grown at low temperature as the output coupler.Stable continuous-wave (CW) mode locking with a 5.1-ps pulse duration at a repetition rate of 113MHz is obtained.The maximum average output power is 2.29W at the incident pump power of 12W with the slope efficiency of about 24.8%.