Temperature‐tuned band gap energy and oscillator parameters of Tl2InGaSe4 semiconducting layered single crystals

The optical properties of Tl₂InGaSe₄ layered single crystals have been studied through the transmission and reflection measurements in the wavelength range of 500‐1100 nm. The analysis of room temperature absorption data revealed the presence of both optical indirect and direct transitions with band gap energies of 1.86 and 2.05 eV, respectively. Transmission measurements carried out in the temperature range of 10‐300 K revealed that the rate of change of the indirect band gap with temperature is γ = – 4.4 × 10^‐4 eV/K. The absolute zero value of the band gap energy was obtained as E_gi(0) = 1.95 eV. The dispersion of the refractive index is discussed in terms of the single oscillator model. The refractive index dispersion parameters: oscillator wavelength and strength were found to be 2.53 × 10^–7 m and 9.64 × 10¹³ m^–2, respectively. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effect of Flux on thermoluminescence in Flux-grown BaFCl crystals

BaFCl crystals have been grown using BaF₂ and BaCl₂ by flux technique. Glow curves, optical absorption, and TL emission spectra of x/r — irradiated crystals are studied. The results have been compared with those BaFCl crystals grown from NaF flux so as to study the effects of flux on these properties. It is found that crystals grown from BaF₂ flux are relatively purer. An additional TL glow peak at 460 K, an optical absorption band at 775 nm and TL emission band at 485 nm have been obtained in the presently grown crystals. The additional glow peak, optical absorption band have been attributed to F(¯F) aggregate centers, whereas the 485 nm TL emission band to impurity centers.     

Excitation intensity and temperature‐dependent photoluminescence and optical absorption in Tl4Ga3InSe8 layered crystals

Photoluminescence (PL) spectra of Tl₄Ga₃InSe₈ layered crystals grown by Bridgman method have been studied in the wavelength region of 600‐750 nm and in the temperature range of 17‐68 K. A broad PL band centered at 652 nm (1.90 eV) was observed at T = 17 K. Variations of emission band has been studied as a function of excitation laser intensity in the 0.13 to 55.73 mW cm^‐2 range. Radiative transitions from donor level located at 0.19 eV below the bottom of conduction band to shallow acceptor level located at 0.03 eV above the top of the valence band were suggested to be responsible for the observed PL band. From X‐ray powder diffraction and optical absorption study, the parameters of monoclinic unit cell and the energy of indirect band gap were determined, respectively. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and characterization of KBi(WO4)2 single crystals

Potassium bismuth tungstate [KBi(WO₄)₂] single crystals with dimensions up to 20 mm × 15 mm × 15 mm have been successfully grown by using the top‐seeded solution growth technique and K₂W₂O₇ as solvent. Experiments show that this crystal is unstable in a strong acid or alkali environment and has a blue fluorescence emission. The density, hardness, melting point, absorption edge, transparency range, prominent Raman shift frequency are 7.57 g/cm³, 238 kg/mm², 800 °C, 380 nm, 400–5450 nm, 868 cm^–1 respectively. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and characterization of 4‐Aminopyridinium‐4‐nitro phenolate single crystals

Organic optical material 4‐Aminopyridinium‐4‐nitro phenolate (4AP4NP) has been synthesized, and single crystals of size 20 x 14 x 6 mm³ have been grown from acetone solvent at room temperature by solvent evaporation technique. The grown crystals have been characterized by X‐ray diffraction to determine the cell parameters, and by FT‐IR technique to confirm the formation of the expected compound. The crystal belongs to monoclinic crystal system with space group P2₁/a.The structural perfection of the grown crystals has been analyzed by high‐resolution X‐ray diffraction (HRXRD) rocking curve measurements. The thermal stability of the compound has been determined by TG‐DTA curves. The transmittance of 4AP4NP has been used to determine the refractive index n; the extinction coefficient K and both the real ε_r and imaginary ε_i components of the dielectric constant as functions of photon energy. The optical band gap of 4AP4NP is 2.4 eV. The dielectric and mechanical behavior of the specimen was also studied. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Crystal growth and structure of KBi(WO4)2 single crystals

Potassium bismuth tungstate [KBi(WO₄)₂] single crystals have been grown by the top‐seeded solution growth technique. Bulk crystal with dimensions up to several centimeters is obtained for the first time. Several self‐flux systems have been used for the growth from the solution and the experiments using K₂W₂O₇ as a solvent are detailed. Powder and single crystal X‐ray diffraction of this crystal are reported. The structure refinement shows that KBi(WO₄)₂ crystallizes in the monoclinic space group C2/c, with a=10.837(3), b=10.586(3), c=7.622(2)Å, β=130.860(3)°, V=661.4(3)ų, and Z=4. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Optical phonon modes and transmissivity in BaWO4 single crystal

Barium tungstate (BaWO₄) single crystal has been grown using Czochralski technique. It belongs to the scheelite structure, forming the space group I 4₁/a at room temperature and the primitive cell contains two molecular units. The polarized Raman spectra were recorded by a micro‐Raman spectrophotometer system in the backscattering geometry. All the observed Raman modes were assigned. The Raman mode at 924 cm^–1, which belongs to the totally symmetrical A_g optical modes, has the strongest intensity and its linewidth is 4.6 cm^–1. The infrared active lattice vibrations have been studied, eight optical modes were observed and assigned. The ultraviolet absorption edge is at 256 nm and the optical transparency range is up to 2500 nm at room temperature. The energy gap E_g of this crystal was obtained from the optical transmission spectra. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth of Inclusion Free KTP Crystals by Top Seeded Solution Growth and their Characterization

KTiOPO₄ single crystals of dimensions 34 × 15 × 15 mm³ have successfully been grown by Top Seeded Solution Growth (TSSG), using phosphate flux (K₆P₄O₁₃), employing a home made vertical cylindrical three zone resistive heated furnace. Growth experiments were carried out with <001> seed orientation. A method to grow inclusion free crystal with less dislocation density is proposed, by employing cooling rate of 0.5‐2 K/day and rotation rate of 60‐30 rpm. UV‐VIS transmission studies were performed and the dependence of absorption coefficient with wavelength is discussed. SHG elements of dimension 8 × 7.5 × 7.5 mm³ were fabricated and conversion efficiency of 58 % was achieved without antireflection coating. Nature of ionic conductivity and ferroelectric phase transition behavior of KTP crystals along the crystallographic polar axis in the frequency range of 100 Hz – 10 MHz are discussed.     

Optical inhomogeneities in Li2B4O7 single crystals

Lithium tetraborate, Li₂B₄O₇ (LTB) crystals were grown by Czochralski technique. It belongs to tetragonal system with lattice parameter a = b = 9.479 Å, c = 10.286 Å. Transmission range of this crystal is 170 nm – 3300 nm. This material has attracted much attention because of its application in higher harmonic generation of Nd:YAG laser and radiation dosimetry. The grown crystals were characterized for their optical inhomogeneity using etch pit study, hardness, conoscopy, interferometry, and UV‐VIS transmittance techniques. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effect of temperature and isomorphic atom substitution on optical absorption edge of TlInS2xSe2(1‐x) mixed crystals (0.25 ≤ x ≤ 1)

The optical properties of the TlInS_2xSe_2(1‐x)mixed crystals (0.25 ≤ x ≤ 1) have been investigated through the transmission and reflection measurements in the wavelength range of 400–1100 nm. The optical indirect band gap energies were determined by means of the analysis of the absorption data. It was found that the energy band gaps decrease with the increase of selenium atoms content in the TlInS_2xSe_2(1‐x)mixed crystals. The transmission measurements carried out in the temperature range of 10–300 K revealed that the rates of change of the indirect band gaps with temperature are γ = –9.2×10^–4 eV/K, –6.1×10^–4 eV/K, –4.7×10^–4 eV/K and –5.6×10^–4 eV/K for TlInS₂, TlInS_1.5Se_0.5, TlInSSe and TlInS_0.5Se_1.5 crystals, respectively. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Electron irradiation‐induced effects on optical spectra of (NH4)2ZnCl4: x Sr2+ single crystals

The effect of electron‐beam irradiation with different doses on optical constants of (NH₄)₂ZnCl₄: x Sr²⁺ crystals with x=0.000, 0.020, 0.039, 0.087 or 0.144 wt% has been studied. The optical transmission in the energy range 3.4‐6.4 eV was measured hence the absorption coefficient was computed as a frequency function. The absorption coefficient was also calculated as a function of electron‐beam dose. Irradiation with e‐beam did not affect the allowed indirect type of transition responsible for interband transitions of (NH₄)₂ZnCl₄: x Sr²⁺ crystals. Values of the optical energy gap E_g and optical moment E_p for electronic interband transition of unexposed and (NH₄)₂ZnCl₄: x Sr²⁺ crystals after e‐beam exposure were deduced. The area under the absorption band at 5.30 eV was used to evaluate the effect of e‐irradiation on optical parameters of samples with x=0.00, 0.020 or 0.039. A shift in the position and a nonmonotonic change in the intensity of this band with increasing e‐beam dose was observed. Changes in the E_g value were used to evaluate the effect of e‐beam exposure dose on (NH₄)₂ZnCl₄: x Sr²⁺ samples with x=0.087 or 0.144. The obtained results were compared with those obtained for the same crystals after irradiation with different γ‐doses.     

Optical and dielectric studies on succinic acid single crystals

Single crystals of ferroelectric succinic acid (SA) with very high degree of transparency were grown from aqueous solution by slow evaporation technique. Single crystal X‐ray diffraction analysis reveals that the crystal belongs to monoclinic system with the space group P2₁/c. Some physical parameters have been determined for grown crystal. The optical absorption study reveals the transparency of the crystal in the entire visible region and the cut off wave length was found to be 240 nm. The optical band gap is found to be 3.75 eV. The dependence of extinction coefficient (k) and refractive index (n) on the wavelength have also been reported. The presence of functional groups was determined qualitatively by using Fourier transform infrared spectrum (FTIR) from which force constant has been calculated. The dielectric constant was also studied as a function of frequency at room temperature and electrical conductivity has been calculated from the Cole‐Cole plot. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Structural,thermal, mechanical and z‐scan studies on 4‐nitrophenol single crystals

4‐nitrophenol (4‐NP) single crystals have been grown by using slow evaporation and slow cooling techniques. A single crystal with size in the range of 7x3.4x1.8cm³ has been obtained by slow cooling method. The grown crystals have been subjected to various characterization studies. The powder XRD spectrum of 4‐NP reveals the good crystalline nature of the grown crystal. Single crystal XRD studies show that the crystal belongs to monoclinic system with cell parameters of a=6.09 Å, b=8.79 Å, c=11.61 Å, α=γ=90°, β=103.15°. The resultant FTIR spectrum confirms the various functional groups present in 4‐NP. Thermal analysis has been performed on the material to study the thermal stability of 4‐NP. The grown crystals belong to the category of soft materials as confirmed by Vickers Hardness tests. The optical transmiitance of 4‐NP single crystals has been measured from Vis‐IR spectroscopy study. The nonlinear optical properties have been analyzed by z‐scan technique and 4‐NP is found to be self defocusing because of its negative nonlinear refractive index. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and thermal studies on pure ADP,KDP and mixed K1‐x(NH4)xH2PO4 crystals

The investigations on the formation of mixed crystals of ammonium dihydrogen orthophosphate (ADP) and potassium dihydrogen orthophosphate (KDP) i.e. potassium ammonium dihydrogen phosphate, K_1‐x(NH₄)_xH₂PO₄ have been presented in this paper. Pure and mixed crystals of ADP and KDP have been grown by slow evaporation technique from the supersaturated solution at an ambient temperature 26±1 °C for ammonium concentration x in the range 0.0 ≤ x ≤ 1.0 in the case of mixed crystals. Crystal compositions were determined by flame atomic absorption spectroscopy and chemical analysis. The results of the X‐ray analysis of the grown crystals are also reported. Thermogravimetric analysis (TGA) and differential thermal analysis (DTA) were used to study the kinetic process of dehydration and the high temperature phase behaviour. DTA showed the distinct thermal events attributed to dehydration of ADP, KDP and K_1‐x(NH₄)_xH₂PO₄. The results of thermal analysis and chemical analysis are consistent with each other. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

The effect of cooling rate on size,quality and morphology of KTiOPO4 (KTP) crystals grown by different nucleation techniques

KTP crystals have been grown by two nucleation techniques namely spontaneous nucleation in flux medium and nucleation on Pt rod using K₆P₄O₁₃ flux.10 °C/h, 7 °C/h, 0.8 °C/h, 0.4 °C/h and 0.2 °C/h cooling rates were applied for spontaneous nucleation and crystals up to 15 × 7 × 4 mm³ in size were grown. 1 °C/h and 0.8 °C/h cooling rates were also used for nucleation on Pt rod and crystals up to 8 × 6 × 3 mm³ in size were grown. The effect of cooling rate on size, morphology and optical quality of grown crystals by both techniques were studied. For nucleation on Pt rod upper and lower rotation rates limits and an optimum rotation rate were distinguished for each cooling rate. Quality of the grown crystals by both techniques was characterized by optical transmission analysis.     

Crystal growth of zirconium‐doped KTiOPO4 crystals in the K2O‐P2O5‐TiO2‐ZrF4 system

Zirconium‐doped KTiOPO₄ (KTP) crystals were grown using a high temperature flux method in the K₂O‐P₂O₅‐TiO₂‐ZrF₄ system. The dopant content in the single crystals with general composition KTi_1‐xZr_xOPO₄ (where x = 0 – 0.026) strongly depends on zirconium concentration in the homogeneous melts. AES‐ICP method and X‐ray fluorescence analysis were used to determine the composition of the obtained crystals. Phase analyses of the products were performed using the powder XRD. The structures of KTiOPO₄ containing different quantities of Zr were refined on the basis of single crystal XRD data. Applying ZrF₄ precursor for zirconium injection into the flux allowed growing the zirconium‐doped KTP crystals at 930–750°C. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Microscopic studies on imperfections in selected YAB single crystals

The as‐grown surface and inner structures of undoped and Nd³⁺‐, Cr³⁺‐, V³⁺‐, Ce³⁺‐, Er³⁺ and Yb³⁺ – and (Er³⁺ + Yb³⁺) – doped yttrium aluminum borate (YAB) single crystals grown from (K₂Mo₃O₁₀ + B₂O₃) flux by spontaneous crystallization or top seeded solution growth (TSSG) technique, were investigated using optical and scanning electron microscopic and analytic chemical methods. Fine and rough growth hillocks of dislocational origin, growth layers, traces of inner planar defects and foreign phase crystalline debris were found and analyzed on the as‐grown faces of crystals. Irregular grains and regular block structures and foreign phase inclusions were observed and studied in the interior of the crystals. The chemical compositions measured by energy dispersive X‐ray spectrometry on perfect and imperfect micro regions are compared with those obtained by flame atomic absorption spectrometry on bulk crystals. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Temperature and excitation intensity tuned photoluminescence in Tl4GaIn3S8 layered single crystals

Photoluminescence spectra of Tl₄GaIn₃S₈ layered crystals grown by Bridgman method have been studied in the wavelength region of 500–780 nm and in the temperature range of 26–130 K with extrinsic excitation source (λ_exc = 532 nm), and at T = 26 K with intrinsic excitation source (λ_exc = 406 nm). Three emission bands A, B and C centered at 514 nm (2.41 eV), 588 nm (2.11 eV) and 686 nm (1.81 eV), respectively, were observed for extrinsic excitation process. Variations in emission spectra have been studied as a function of excitation laser intensity in the 0.9‐183.0 mW cm^–2 range for extrinsic excitation at T = 26 and 50 K. Radiative transitions from the donor levels located at 0.03 and 0.01 eV below the bottom of the conduction band to the acceptor levels located at 0.81 and 0.19 eV above the top of the valence band were proposed to be responsible for the observed A‐ and C‐bands. The anomalous temperature dependence of the B‐band peak energy was explained by configurational coordinate model. From X‐ray powder diffraction and energy dispersive spectroscopic analysis, the monoclinic unit cell parameters and compositional parameters of Tl₄GaIn₃S₈ crystals were determined, respectively. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Linear and nonlinear optical properties of tris thiourea zinc sulphate single crystals

Optical absorption of tris thiourea zinc sulphate (ZTS) single crystals has been measured and its direct band gap was found to be 3.6 eV. Theoretical calculations were carried out to determine the linear optical constants such as extinction coefficient and refractive index. Further the optical nonlinearties of ZTS have been investigated by Z‐scan technique with He‐Ne laser at 632.8 nm. The nonlinear refractive index, absorption coefficient and third order susceptibility is found to be in the order of –5.36 ± 0.26 × 10^–12 cm²/W, 4.24 ± 0.21 × 10^–4 cm/W, 3.5 ± 0.17 × 10^–4 esu respectively. Thus optical characterization of ZTS reveals the various industrial application oriented properties of the material. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and Properties of Potassium Holmium Double Tungstate KHo(WO4)2

Potassium holmium tungstate KHo(WO₄)₂ crystal, as other tungstates, shows the high temperature irreversible structural phase transition. Owing to this, KHo(WO₄)₂ single crystals were grown due to spontaneous crystallisation with use of the High Temperature Solution Growth technique, which allows to lower the temperature of crystallisation below the temperature of the phase transition. K₂W₂O₇ was used as a solvent. It provides a very wide temperature range of crystallisation and does not introduce additional impurities into the melt. The starting flux contained 20 mol% of KHo(WO₄)₂ dissolved in K₂W₂O₇. It was found that potassium holmium double tungstate is pleochroic. The two different optical spectra: one spectrum for electrical vector of linearly polarised light parallel to optical Y axis (main spectrum) and second one for electrical vector perpendicular to Y axis were measured.