Polychloro‐alkanes used as templates in solvothermal synthesis of selenium microrods

Polychloro‐alkanes, including dichloromethane (CH₂Cl₂), chloroform (CHCl₃) and tetrachloromethane (CCl₄), were first introduced to synthesize trigonal selenium (t‐Se) microrods as a new kind of coordinating solvent, which played two important roles in the formation of Se nuclei and templated effect of Se microrods. The possible formation mechanism of t‐Se microrods was proposed. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Influence of selenization temperature on synthesis,morphology, and properties of nanostructured CoSe2 films

Nanostructured cobalt selenide (CoSe₂) thin films were deposited on a glass substrate using the selenization of Co films at different selenization temperatures (300 °C, 400 °C, and 500 °C) in a pure Se vapor for two hours. The morphology and structure of the as‐deposited films shows that the film morphology and crystallinity are affected by the selenization temperature. Increasing the selenization temperature from 300 °C to 400 °C and 500 °C results in a change in the surface and cross sectional morphology. At 300 °C, the Co films have an almost amorphous structure, while at temperatures of 400 and 500 °C, the Co films have a crystalline nanostructure with bilayered morphology. Optical analyses of the CoSe₂ films at 500 °C show a large absorption (α > 1.0 × 10⁵ cm⁻¹) and a direct band gap (∼1.0 eV).     

Kinetically controlled synthesis of hollow Cu2O nanocubes under solvothermal condition

Hollow Cu₂O nanocubes have been fabricated under solvothermal condition using N,N ‐dimethylformamide (DMF) as solvent at 120 °C for 12 h. The products were characterized by transmission electron microscopy (TEM), scanning electron microscopy (SEM), X‐ray powder diffraction (XRD) and high‐resolution transmission electron microscopy (HRTEM). Series of experiment confirmed that the amount of water, the reaction time and temperature played important roles in the morphology evolution of hollow Cu₂O nanocubes. DMF is a relatively weak alkali solvent and could release a certain amount of OH^– under the given conditions. As the release speed of OH^– from DMF became substantially slow, the nucleation and growth of Cu₂O nanocubes turned into kinetically controlled process. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Synthesis,conversion and comparison of the photocatalytic and electrochemical properties of ZnSe·N2H4 and ZnSe microrods

Novel ZnSe·N₂H₄ complex microrods with ∼2 μm in length and 100∼200 nm in diameter were successfully prepared by the solvothermal method at 110°C for 10 h, employing ZnAc₂·2H₂O and Se powders as the reactants, N₂H₄·H₂O as the reductant and medium. Experiments showed that the as‐obtained complex could be further converted into pure hexagonal ZnSe in an ethanol medium at 180 °C for 10 h, and the morphology hardly changed. The as‐prepared products were characterized by X‐ray powder diffraction (XRD), Energy dispersive spectrum (EDS), IR spectrum, Thermogravimetric (TG) analysis and Field emission scanning electron microscopy (SEM). Also, their photocatalytic degradation and electrochemical property were compared. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Solution growth and morphology of CH3NH3PbBr3 single crystals in different solvents

In this work, large‐sized CH₃NH₃PbBr₃ single crystals were successful grown using solution evaporation method with hydrohalic acid and N, N‐Dimethylformamide (DMF) as solvent respectively. The lattice parameters of cubic CH₃NH₃PbBr₃ were estimated using XRD method. The solubility of CH₃NH₃PbBr₃ in hydrobromic acid was determined at the temperature range between 20 °C–90 °C. A special micro‐solution crystallizer was designed to in‐situ study the morphology of CH₃NH₃PbBr₃ crystal. The largest crystal face was indexed by the XRD patterns and it would be {110} for CH₃NH₃PbBr₃ grown from HBr solution and {100} from DMF solution. The results show that solvent would affect the morphology and crystal habit greatly during crystal growth from solution.     

Preparation and characterization of amorphous cadmium–selenium ribbons

Chalcogenide glasses based on the cadmium–selenium system, with the selenium composition varying from 0 to 7.5 wt% have been prepared using melt-quenching method i.e., single-roller quenching technique. The X-ray diffraction (XRD) and selected area electron diffraction (SAD) patterns of the CdSe ribbons indicate that the ribbons are amorphous. The transmission electron microscopy (TEM) studies carried out on these ribbons reveal that the constituents are inhomogeneously distributed in these ribbons. The temperature dependence of the electrical resistivity, ρ and thermoelectric power (TEP) of these ribbons has been studied in the temperature range 30–350 °C. The sudden jump in the values of electrical resistivity at a specific temperature for each case in these ribbons has been correlated with the phase transition i.e., the onset of crystallization in these materials during heating. The crystallization temperature, T_c has been found to be a function of Se content of these ribbons. The phase change in these ribbons as a result of heating does not seem to affect the variation of TEP with temperature. However, the slope of TEP versus temperature curves depends on Se content in these ribbons. The differential scanning calorimetry (DSC) of these ribbons indicates that the supercooled region in these ribbons extends from 50 to 70 °C. The composition CdSe ribbon with 0.5 wt% Se has the highest value of T_c and glass forming ability, K_g = 0.7.     

Controlled synthesis of selenium of different morphologies at room temperature

A facile and convenient chemical precipitation route has been developed for the controlled growth of selenium nanowires and hierarchical microspheres at room temperature, with Na₂SeO₃ and hydrazine hydrate as starting materials in the presence of 1,2,3‐trimethylimidazolium tetrafluoroborate (tmimBF₄). The surface morphology of microspheres can be tuned by adjusting the reaction media. The products were characterized by X‐ray powder diffraction (XRD) and scanning electron microscope (SEM). Possible formation mechanisms of selenium nanowires and microspheres are proposed, respectively. The influences of the nature of reaction media, agitation and tmimBF₄ on the morphologies development were experimentally investigated and it was found that these factors were of great importance for the formation of Se morphologies. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Structural and Electrical Properties of Cd Doped InSe Thin Films

Polycrystalline Cd doped InSe thin films were obtained by thermal co‐evaporation of alpha‐In₂Se₃ lumps and Cd onto glass substrates at a temperature of 150°C. The films were annealed at 150°C and 200°C. The films were found to contain around 46% In, 47% Se and 7% Cd in weight. The films exhibited p‐type conductivity. The results of conductivity measurements have revealed that thermionic emission and variable range hopping are the two dominant conduction mechanisms, in the temperature ranges of 320‐160 K and 150‐40 K respectively. It was observed that above 240 K mobility is limited by the scattering at the grain boundaries. As the temperature decreases, thermal lattice scattering followed by the ionized impurity scattering dominate as the two main mechanisms controlling the mobility. Acceptor to donor concentration ratio was found to be slightly increasing due to annealing.     

Effect of annealing on the properties of chemical bath deposited nanorods of CdSe thin films

Cadmium selenide (CdSe) thin films have been deposited by chemical bath deposition (CBD) on a glass substrate and they are annealed at 450 °C for 1 h. Scanning electron microscopic (SEM) image of as‐deposited CdSe shows the spherical shaped grains distributed over entire glass substrate. When it is annealed at 450 °C, clusters of nano‐rods with star shaped grains are formed. The X‐ray diffraction (XRD) study of the as‐deposited films exhibits a polycrystalline nature and it undergoes a structural phase transition from the metastable cubic to the stable hexagonal phase when annealed at 450 °C. Optical band gap of as‐deposited films (2.0 eV) has a blue shift with respect to the bulk value (1.7 eV) due to quantum confinement. The band gap energies of the films are decreased from 2.0 eV to 1.9 eV due to annealing at the temperature of 450 °C. The electrical resistivity, Hall mobility and carrier concentration of as‐deposited and annealed films are determined.     

Formation of nanostructured tin oxide semiconductors by a simple thermal redox process

Nanostructured tin oxide have been synthesized in one‐step process by a novel simple thermal reduction‐oxidation route. The results show that tin oxide nanowires and nanorods could be synthesized via thermal treatment of a mixture of tin oxide and charcoal powder in air at 1000‐1250°C. At a relatively low temperature, 1000°C, and time, 30 min, the tin oxide structure was found to be a bundle of dense nanorods. By increasing the reaction time to 180 min at the same temperature (1000°C), the bundles separated to form liberated individuals nanowires with almost round cross sectional view. With the increase of temperature and time, the morphology of tin oxide nanostructures varied from nanowires to well‐defined tetragonal rods. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effect of isothermal annealing and visible-light illumination on the AC-impedance behavior of undoped selenium thin films

The effect of post-deposition isothermal annealing (30 °C ? T_A ? 70 °C) and visible-light illumination on the complex AC-impedance of undoped selenium thin films deposited at the substrate temperatures T_S = 30, 50, 70 °C has been studied in the frequency range 0.2–12 kHz. The AC-impedance of amorphous selenium (a-Se) films (T_S, T_A < 50 °C) was mainly capacitive, with no loss peaks being observed in their Z″(ω)–ω curves, irrespective of illumination. This behavior was ascribed to a dominant charge-carrier trapping effect of bulk/surface charged defects usually present in a-Se. On the other hand, the measured Z″(ω)–Z′(ω) diagrams of illuminated polycrystalline Se samples (50 °C ? T_S, T_A ? 70 °C) exhibited almost full semicircles, whereas their Z″(ω)–ω curves revealed prominent loss peaks at well-defined frequencies. As the annealing temperature or light intensity is increased the loci of the points determined by intersections of these semicircles with the Z′-axis at the low-frequency side shift greatly towards the origin, while the loss-peak positions shift to higher frequencies. These experimental findings were explained in terms of a significant increase in electrical conductivity of selenium films due to thermally-induced crystallization at temperatures beyond glass-transformation region of undoped selenium and to creation of electron–hole pairs by visible-light illumination.     

Optical properties and synthesis of CuInSe2 thin films by selenization of Cu/In layers

In this paper, we report the effect of annealing temperature on the properties of copper indium diselenide (CuInSe₂) thin films. The CuInSe₂ thin films were fabricated at 500 °C for 2 h by annealing Cu‐In layers (as precursors) selenized in a glass tube with pure selenium powder. The structural and morphological properties of the CuInSe₂ thin films were characterized respectively by means of x‐ray diffraction (XRD) and field‐emission scanning electron microscope (FE‐SEM). The type of CuInSe₂ thin film has been identified as direct allowed and the band gap value was determined. The study of UV/Visible/NIR absorption shows that the band gap value of CuInSe₂ thin film is about 1.07 eV, which is within an optimal range for harvesting solar radiation energy. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Polynary silicon arsenic chalcogenide glasses with high softening temperatures

The introduction of Ag in SiAsTe glasses permits the incorporation of Se, otherwise volatile and/or degradable as a constituent in Si-containing chalcogenide glasses. SiAsAgTeSe glasses exhibit much higher softening ranges and glass transition temperatures than encountered in known chalgogenide systems. A glass Si₃₅As₁₅Ag₁₀Te₂₀Se₂₀ had the viscosity log ν = 13 at about 500°C, as compared to 370°C for the base glass Si₃₅As₂₅Te₄₀, the viscosity of log ν = 9.8 at about 560°C, as compared to 442°C for the base glass. Phase separation occurs in the system SiAsAgTeSe and becomes manifest in two glass transitions indicated by changes in the slopes of the expansion curves and breaks in the softening point-composition relations. The existence and behavior SiAsAgTeSe glasses suggests the possible development of higher T_g i.r. transparencies and higher T_g semiconductor glasses than described so far.     

X-ray investigation of the crystallization of chalcogenide glasses of the type (As2Se3)1−x:(Tl2Se)x

Amorphous and crystalline states of As₂Se₃, (As₂Se₃)₃ : Tl₂Se and As₂Se₃ : Tl₂Se have been studied using X-ray diffraction techniques. Structural changes arise during the process of annealing in the temperature range between their softening and melting points are reported and their rates investigated. The crystallization temperatures were found to be 105 ± 5 °C, 135 ± 5 °C and 180 ± 5 °C respectively. The unit cell parameters are identified for each of the three resulting crystalline phases, that for As₂Se₃ : Tl₂Se being orthorhombic while the other two are monoclinic.     

Investigation of structural transformations in Cu2Se

Structural transformations in Cu₂Se have been studied by the method of hightemperature roentgenography. From a diffraction record of reflection angles and from a Debye-powder pattern the unit-cell parameters of a rhombic α-modification have been calculated at temperatures of 25, 50, 100, and 132 °C. Using the diffraction line (027) disappearing under the α → β transformation and appearing again in the course of the inverse β → α transformation it has been found that the equilibrium temperature between the α- and β-modifications is T₀ = 134 ± 0.5 °C. The unit cell parameter of a hightemperature face-centered cubic β-modification at temperatures of 150, 200, 250, and 300 °C also has been determined. In the course of mutual transformations a rigid orientational linkage has been found to exist between the α- and β-modifications. It has been discovered that when the multiplicity of α → β and β → α transformations n reaches a value of approximately 30, a β-Cu₂Se → Cu₂–_xSe transformation (where x = 0.20) takes place which is not followed by an inverse transformation.     

An X‐ray powder diffraction study of the microstructural evolution on heating 3:2 and 2:1 mullite single‐phase gels

Single‐phase gels with compositions 3Al₂O₃·2SiO₂ and 2Al₂O₃·SiO₂ were prepared by gelling mixtures of aluminium nitrate and tetraethylorthosilicate. Gels were fast heated at different temperatures between 900°C and 1600°C. The phase transformation and microstructural changes of both mullite precursor gels over the temperature range were followed by X‐ray powder diffraction (XRD), lattice parameter determination (LP), and scanning and transmission electron microscopies (SEM and TEM). The distribution of crystallite sizes and strains were determined by linewidth refinements of X‐ray diffraction patterns using the integral breadth method of Langford and the Warren‐Averbach analysis. XRD of both heated gels showed the formation of crystalline mullite single phase. Some amount of glassy phase coexisted with mullites at low temperatures, i. e. below 900°C. The compositional range of mullites formed on heating gels at temperatures between 900°C and 1600°C was dependent on the starting nominal composition of gels. SEM and TEM micrographs of both heated gels below 1200°C showed the formation of small, discrete, prismatic, well‐shaped nanocrystals in a very ordered arrangement. The size of these nanocrystals was dependant on the nominal composition of gels and increased on rising the heating temperature of gel precursors. The microstructural features obtained from linewidth refinement results of X‐ray diffraction patterns also allowed to suggest the formation of prismatic a little elongated nanocrystals at temperatures below 1200°C. Microstrain values were small and only displayed a relatively significant value for mullites processed at 900°C. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Structural,optical and photoconductive properties of electron beam evaporated CdSxSe1‐x films

CdS_xSe_1‐x films were deposited by the electron beam evaporation technique on glass substrates at different temperatures in the range 30 – 300 °C using the laboratory synthesized powders of different composition. The films exhibited hexagonal structure and the lattice parameters shifted from CdSe to CdS side as the composition changed from CdSe to CdS side. The bandgap of the films increased from 1.68 to 2.41 eV as the concentration of CdS increased. The root‐mean‐roughness (RMS) values are 3.4, 2.6, 1.2 and 0.6 nm as the composition of the films shifted towards CdS side. The conductivity varies from 30 Ωcm^‐1 to 480 Ωcm^‐1 as the ‘x’ value increases from 0 to 1. The films exhibited photosensitivity. The PL spectrum shifts towards lower energies with decreasing x, due to the decrease of the fundamental gap with Se composition. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effect of Cu/In ratio on properties of CuInSe2 thin films prepared by selenization of Cu‐In layers

In this paper, the chalcopyrite CuInSe2 thin films were fabricated from a selenization of electrodeposited Cu‐In layers. In this study, the electrodeposition time of the In layer was set, but that for the Cu layer was not. The thin films were selenized in a sealed glass tube with pure Se powder by three different Cu layer samples at various electrodeposition times at 500 °C for 2 hours. An FE‐SEM image of the sample shows that the copper‐rich product has irregular agglomerates with a dense surface. The X‐ray diffraction patterns show CuInSe₂ peaks for all samples. However, the X‐ray diffraction pattern reveals CuSe₂ peaks when the electrodeposition time of the Cu layer increases. On the other hand, the band gap (E_g) of the samples decreases from 1.15 to 1.07 eV when the Cu/In ratio increases.     

Precipitation of nesquehonite from homogeneous supersaturated solutions

The homogeneous (unseeded) precipitation of nesquehonite (MgCO₃·3H₂O) was studied over the temperature range of 10‐40 °C. Precipitation was triggered by the supersaturation created by mixing MgCl₂ solution (0.5‐1.5 M) with Na₂CO₃ solution in the same concentration range. The Meissner's method was adopted in the calculation of supersaturations during the MgCl₂‐Na₂CO₃ reaction to monitor the precipitation. Solids were identified using X‐ray diffraction (XRD) analysis and scanning electron microscope (SEM) images. In the temperature range of 10‐40 °C, MgCO₃·3H₂O with needle‐like or gel‐like morphology was precipitated. It was seen that the length, width and surface smoothness of the particles changed with reaction temperature and supersaturation. The supersaturation (S) was in the range of 1.09‐58.68 during titration of Na₂CO₃ solution. The dimension of the crystals increased with longer addition time (or lower initial concentration of reactant) at the same temperature. Slower addition via titration of 2 h followed by 2 h of equilibration at 40 °C proved successful in producing well developed needle‐like MgCO₃·3H₂O crystals of 30‐50 μm long and 3‐6 μm wide. MgCO₃·3H₂O obtained were calcined to produce highly pure magnesium oxide (MgO) at 800 °C. The morphology of MgO was similar to that of their corresponding precursors. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effects of annealing on structural,electrical and optical properties of AgGa(Se0.5S0.5)2 thin films deposited by using sintered stoichometric powder

The structural, electrical and optical properties of AgGa(Se_0.5S_0.5 )₂ thin films deposited by using the thermal evaporation method have been investigated as a function of annealing in the temperature range of 450–600 °C. X‐ray diffraction (XRD) analysis showed that the structural transformation from amorphous to polycrystalline structure started at 450 ^oC with mixed binary phases of Ga₂Se₃, Ga₂S₃, ternary phase of AgGaS₂ and single phase of S. The compositional analysis with the energy dispersive X‐ray analysis (EDXA) revealed that the as‐grown film has different elemental composition with the percentage values of Ag, Ga, Se and S being 5.58, 27.76, 13.84 and 52.82 % than the evaporation source powder, and the detailed information about the stoichometry and the segregation mechanisms of the constituent elements in the structure have been obtained. The optical band gap values as a function of annealing temperature were calculated as 2.68, 2.85, 2.82, 2.83, and 2.81 eV for as‐grown, annealed at 450, 500, 550, and 600 °C samples, respectively. It was determined that these changes in the band gap are related with the structural changes with annealing. The temperature dependent conductivity measurements were carried out in the temperature range of 250‐430 K for all samples. The room temperature resistivity value of as‐grown film was found to be 0.7x10⁸ (Ω‐cm) and reduced to 0.9x10⁷ (Ω‐cm) following to the annealing. From the variation of electrical conductivity as a function of the ambient temperature, the activation energies at specific temperature intervals for each sample were evaluated. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)