Growth and photorefractive properties of Mg:Ce:Cu:LiNbO3 crystals grown by Czochralski method

In this paper, photorefractive properties of Mg:Ce:Cu:LiNbO₃ crystals were studied. The crystals doped with different concentration of Mg ions have been grown by the Czochralski method. Mg concentrations in grown crystals were analyzed by an inductively coupled plasma optical emission spectrometry (ICP‐OE/MS). The crystal structures were analyzed by the X‐ray powder diffraction (XRD), ultraviolet‐visible (UV‐Vis) absorption spectra and infrared (IR) transmitatance spectra. The photorefractive properties of crystals were experimentally studied by using two‐beam coupling. In this experiment we determined the writing time, maximum diffraction efficiency and the erasure time of crystals samples with He‐Ne laser. The results showed that the dynamic range (M/#), sensitivity (S) and diffraction efficiency (η) were dependent on the Mg doping concentration, and the Mg(4.58mol%):Ce:Cu:LiNbO₃ crystal was the most proper holographic recording media material among the six crystals studied in the paper. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Zn,Co双掺杂近化学计量比LiNbO_3晶体的生长及性能

以K_2O为助熔剂,应用坩埚下降法生长出了Co~(2+) 初始浓度为0.5 mol;,以及ZnO分别为3 mol;与6 mol;的单掺与双掺杂SLN晶体(分别用SLN0, SLN3, SLN6表示).测定了晶体上下部位的吸收与发射光谱.在晶体的吸收光谱中均可观察到520 nm,549 nm,612 nm,1447 nm四个吸收峰,表明Co~(2+)处于晶体的八面体场中.ZnO的掺入明显地改变了吸收峰的相对强度.在520 nm光的激发下,观察到776 nm的荧光发射,其荧光强度的相对强弱也与ZnO的掺杂量有明显的联系.从吸收边带估算出SLN0, SLN3, SLN6晶体中Li2O的含量分别为49.06 mol;,49.28 mol;, 49.10 mol;.ZnO的掺杂量对Co~(2+)在铌酸锂晶体中的浓度分布有很大的影响作用,当ZnO的掺入量为3 mol;时,明显地抑制了Co~(2+)在LiNbO_3晶体中的掺入,当ZnO掺杂量达到6 mol;时,抑制作用减弱.本文从Zn~(2+)在LiNbO_3中随浓度变化的分凝情况以及对Co~(2+)的排斥作用解释了Co~(2+)在晶体中的分布特性以及光谱的变化情况.     

Growth and optical damage properties of In:Zn:LiNbO3 waveguide substrate

In:Zn:LiNbO₃ crystals doped with different indium concentrations were grown by Czochralski technique. The optical damage threshold value and ultraviolet‐visible absorption spectra of the In:Zn:LiNbO₃ crystals were measured. The In:Zn:LiNbO₃ crystals were made into optical waveguide substrates using hexanedioic acid as proton exchange agent. The optical damage resistant ability of those optical waveguide substrates was investigated by the m‐line method. The optical damage threshold values of In(2mol.%):Zn(3mol.%):LiNbO₃ crystal and optical waveguide substrate are two orders of magnitude higher than those of pure LiNbO₃. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Photorefractive features of non‐stoichiometry codoped Hf:Fe:LiNbO3 single crystals

Hf(2mol%):Fe(0.05wt%):LiNbO₃ crystals with various [Li]/[Nb] ratios of 0.94, 1.05, 1.2 and 1.38 have been grown. The photorefractive resistant ability increases with the accretion of [Li]/[Nb] ratio. When the ratio of [Li]/[Nb] is 1.20 or 1.38, the OH^‐ absorption band shifts to about 3477cm^‐1. The mechanisms of the photorefractive resistant ability increase and the absorption band shift have been discussed. The exponential gain coefficient (Γ) of the crystals was measured with two‐beam coupling method and the effective charge carrier concentration (N_eff) was calculated. The results show that Γ and N_eff increase with the accretion of [Li]/[Nb] ratio. The temperature effect of codoped Hf:Fe:LiNbO₃ crystals was also studied, it was found that the exponential gain coefficient increase dramatically at about 55°C, 70°C and 110°C, this is due to the inner electric field which is resulted from structure phase change. (© 2007 WILEY ‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Structure and optical properties of near stoichiometric Ce:LiNbO3 crystals

The near sotichiometric Ce:LiNbO₃ (Ce:SLN) crystals were grown by the top seeded solution growth (TSSG) method by adding K₂O flux to Li₂O‐Nb₂O₅ melt. Their UV‐vis absorption spectra and IR spectra were measured and discussed to investigate their defect structure. The results showed that the grown crystals were near stoichiometric and Ce ions in the crystals located the Li site. Photorefractive properties of Ce:SLN crystals were studied by two‐wave coupling experiment. The results of the two‐wave coupling experiments of the crystals showed that as the CeO₂ doping concentrations increased, the diffraction efficiency increased, photoconductivity decreased and the writing time and erasure time increased. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and characterization of near stoichiometric LiNbO3 single crystal

A near stoichiometric LiNbO₃ single crystal has been grown by the Czochralski method from a 58.5% Li melt hold in a large platinum crucible. High resolution X‐ray rocking curves of 30 0 and 0006 reflections indicated that the near stoichiometric LiNbO₃ crystal possesses the high structural quality. Compared with the congruent LiNbO₃, the near stoichiometric LiNbO₃ possesses shorter ultraviolet absorption edge, thus higher Li concentration. The OH^– infrared absorption band analyses showed that the Li concentration in the near stoichiometric LiNbO₃ crystal is higher than that in the congruent LiNbO₃ crystal. This result is in good agreement with that of the ultraviolet absorption edge. The electro‐optic (EO) coefficient γ₂₂ of the near stoichiometric LiNbO₃ crystal was measured to be 6.75 pm/V higher than that of congruent LiNbO₃ crystal. It also proves the near stoichiometric LiNbO₃ electro‐optic Q‐switched requires a low driving voltage and it is advantageous for the device performance. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

助熔剂坩埚下降法生长近化学计量比Co:LiNbO3晶体

以K2O为助熔剂,在较大的温度梯度(90～100℃/cm)条件下进行引种和晶体生长,应用坩埚下降法成功地生长出了初始CO2+掺杂浓度为0.5mol;的近化学计量比的铌酸锂晶体.测定了该晶体的红外光谱与吸收光谱,与同成份的LiNbO3晶体相比,其紫外吸收边向短波方向移动,OH-红外吸收峰的位置发生变化.观测到520,549,612nm三个分裂的尖吸收峰以及1400nm左右为发光中心的吸收带.从吸收特性可以判断,Co离子在铌酸锂晶体中呈现+2价.比较上部与下部晶体的吸收强度,可以推测出沿着晶体生长方向Co2+离子浓度逐渐降低,Co2+离子在晶体中有效的分凝系数大于1.     

Influence of Zn2+ ions concentration on the optical properties of Zn/Er:LiNbO3 crystals

Congruent Er³⁺(3 mol%):LiNbO₃ crystals codoped with ZnO (X mol %, X=0, 3, 6 and 7) were grown by the Czochralski technique. The Er contents in the crystals were measured by an inductively coupled plasma atomic emission spectrometer (ICP‐AES). Under 800 nm excitation, the upconversion emission spectra reveal an enhancement of the green emission with respect to the red emission when the Zn²⁺ ions are introduced into Er:LiNbO₃ crystal. The effect of Zn²⁺ ions concentration on the intensity ratio of the green to red emission has been investigated. Two cross‐relaxation processes (²H_11/2 + ⁴I_13/2 → ⁴I_11/2 + ⁴F_9/2 and ⁴F_7/2 + ⁴I_11/2 → ⁴F_9/2 + ⁴F_9/2) are involved in populating the ⁴F_9/2 state, which bypass the green‐emitting states. The OH^‐ absorption spectra indicate that the Zn²⁺ codoping leads to a decreased concentration of Er³⁺ cluster sites contributing to the enhancement of the green emission. The studies on UV‐vis absorption spectra show that the heavily codoped with Zn²⁺ results in the reformation of the Er³⁺ cluster sites in Er:LiNbO₃. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth of Zn3As2 on GaAs by liquid phase epitaxy and their characterization

Zn₃As₂ epitaxial layers were grown on GaAs (1 0 0) substrates by liquid phase epitaxy (LPE) using Ga as the solvent. Zinc mole fraction in the growth melt was varied from 1.07×10^?2 to 6×10^?2. X-ray diffraction spectrum exhibits a sharp peak at 43.3° characteristic of Zn₃As₂ crystalline layer. The peak intensity increases with increase in zinc mole fraction in the growth melt. The compositions of the as-grown Zn₃As₂ layers were confirmed by energy dispersive X-ray (EDX) analysis. Surface morphology was studied using scanning electron microscopy (SEM) and the thickness of the epilayers was also determined. The Hall measurements at 300 K indicate that Zn₃As₂ epilayers are unintentionally p-doped. With an increase of zinc mole fraction in the growth melt, carrier concentration increases and carrier mobility decreases. Infrared optical absorption spectroscopy showed a sharp absorption edge at 1.0 eV corresponding to the reported band gap of Zn₃As₂.     

Optical damage resistance of Mg:Ce:Fe:LiNbO3 crystals

Mg:Ce:Fe:LiNbO₃ crystals were prepared with fixed concentrations of Fe₂O₃ and CeO₂, and differing concentrations of MgO by the Czochralski technique. Their infrared transmission spectra were measured in order to investigate their defect structures and their optical damage resistance was characterized by the photoinduced birefringence change and transmission facula distortion method. The optical damage resistance of Mg:Ce:Fe:LiNbO₃ crystals increases remarkably when the concentration of MgO exceeds a threshold concentration. The dependence of the optical damage resistance on the defect structure of Mg:Ce:Fe:LiNbO₃ crystals is discussed in detail. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Microstructure and optical properties of Zn:Mn:Fe:LiNbO3 crystals

Zn:Mn:Fe:LiNbO₃ crystals were prepared by Czochralski technique. Its microstructure was measured and analyzed by UV‐Vis absorption spectra. The optical damage resistance of Zn:Mn:Fe:LiNbO₃ crystals was characterized by the transmitted beam pattern distortion method. It increases remarkably when the concentration of ZnO is over a threshold concentration. Its value in Zn(7.0 mol%):Mn:Fe:LiNbO₃ crystal is about three orders of magnitude higher that in the Mn:Fe:LiNbO₃ crystal. The dependence of the defects on the optical damage resistance was discussed. The non‐volatile holographic storage was realized in all crystals, and the sensitivity of the Zn(7.0 mol%):Mn:Fe:LiNbO₃ crystal is much higher than that of others. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Optical absorption spectra of LiNbO3, Fe:LiNbO3, and Zn:Fe:LiNbO3 single crystals grown by Bridgman method

The optical absorption spectra of LiNbO₃ (LN), Fe:LiNbO₃ (Fe:LN), and Zn:Fe:LiNbO₃ (Zn:Fe:LN) single crystals grown by Bridgman method were measured and compared. The absorption characteristics of the samples and the effects of growth process conditions on the absorption spectra were investigated. The Fe, Zn and Li concentrations in the crystals were analyzed by inductively coupled plasma (ICP) spectrometry. The results indicated that the overall Fe ion and Fe²⁺ concentration in Fe:LN and Zn:Fe:LN crystals increased along the growing direction. The incorporation of ZnO in Fe:LN crystal induced increase of Fe²⁺ in the crystal. Among Fe‐doped and Zn:Fe‐codoped LN single crystals, 3 mol% ZnO doped Fe:LN had a biggest change of Fe²⁺ ion concentration from bottom to top part of crystal. The effects of technical conditions (atmosphere and thermal history) on Fe²⁺ ion concentration were discussed. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Influence of Mg/Er co‐doping on the principal laser parameters of LiNbO3 crystals

Mg: Er: LiNbO₃ crystals were grown by the Czochralski technique with various concentrations of MgO = 2 mol%, 4 mol%, 6 mol% and the fixed concentration of Er₂O₃= 1 mol% in the melt, and the 8 mol%Mg: 1 mol%Er: LiNbO₃ crystal was fabricated by the Czochralski technique with special technology process. The crystals were treated by polarization, reduction and oxidation. The segregation coefficients of Mg²⁺ and Er³⁺ in Mg: Er: LiNbO₃ crystals were measured by X‐ray fluorescence spectrograph, as well as the crystal's defect structure and optical properties were analyzed by the UV‐Vis, IR and fluorescent spectroscopy. The pump wavelength and the surge wavelength were determined. Using m‐line method tested optical damage resistance of those crystals, the results show that photodamage threshold of Mg: Er: LiNbO₃ crystals are higher than that of Er: LiNbO₃ crystal, and the oxidation treat could enhance the photodamage resistant ability of crystals while the reduction treat could depress the ability. The optical damage resistance of 8 mol%Mg: 1 mol%Er: LiNbO₃ crystal was the strongest among the samples, which was two orders magnitude higher than that of 1 mol%Er: LiNbO₃ crystal. The dependence of the optical properties on defect structure of Mg: Er: LiNbO₃ crystals was discussed. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

化学计量比LiNbO3晶体宏观生长缺陷的观察

本文对采用双坩埚提拉法(DCCZ)生长的化学计量比LiNbO3晶体中出现的机械双晶、组分过冷、包裹体等宏观生长缺陷进行了观察和分析.结果表明机械双晶通常以{102}和{104}面族为双晶面,而不是以前文献报道的{102}和{012}面族;化学计量比LiNbO3晶体双坩埚提拉法生长与同成份晶体生长不同,前者是助熔剂生长体系,生长速度稍快或温度较小的波动就会导致组分过冷,而后者属于纯熔体生长体系,不容易产生组分过冷;包裹体是由于组分过冷生长时界面失稳夹入熔体所造成的.由于这些缺陷的存在都会严重影响单晶的获得率和质量,为此,我们通过大量实验研究后提出了可以减少和避免这些生长缺陷提高晶体质量的方法.     

Growth and optical homogeneity investigations of Fe and Fe:Mn codoped LiNbO3 crystals

Lithium niobate (LiNbO₃) crystals doped with Fe and Fe:Mn were grown by Czochralski technique. The doping concentrations of Fe and Mn were optimized. Transmission studies reveal broad absorption band centered at 488 nm. The UV cutoff observed for Fe doped LiNbO₃ is 358 nm whereas for Fe:Mn codoped LiNbO₃ is 352 nm. This decrease in UV cutoff for Fe and Mn codoped LiNbO₃ compared to only Fe doped LiNbO₃ is due to the increase in Li/Nb ratio. Optical homogeneity was assessed using conoscopy and birefringence interferometry. Dark and photo conductivity measurements prove that LiNbO₃ is a negative photo conducting material. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Influence of microscopic defects on optical damage resistance of Zn:Fe:LiNbO3 crystals

Influence of defect structure on the infrared transmission spectra of OH^‐ in Zn:Fe:LiNbO₃ crystals with various ZnO concentration and different Li/Nb ratios was investigated. It indicates that above the Zn concentration threshold the OH^‐ absorptions bands successively shift from 3482cm^‐1 to 3504cm^‐1 and 3529cm^‐1. The intensity of the 3504cm^‐1 band increases with ZnO concentration increasing. The optical damage resistance of the Zn:Fe:LiNbO₃ crystals increases rapidly when the ZnO concentration exceeds a threshold value. This result contributed to the site alteration from the Li sites to Nb sites due to Zn‐doping in crystal. © 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim     

Improved blue photorefractive properties of near‐stoichiometric LiNbO3:Mn:Fe:Zr crystal

Near‐stoichiometric LiNbO₃ single crystal tri‐doped with ZrO₂, MnO and Fe₂O₃ was grown from Li‐riched melt by Czochralski method. The defect structures and composition of these crystals were analyzed by means of ultraviolet‐visible and infrared transmittance spectra. The appearance of 3466 cm^‐1 peak in infrared spectra showed that the crystal grown from Li‐riched melt was near stoichiometric. The photorefractive properties at the wavelength of 488 nm and 633 nm were investigated with two‐beam coupling experiment, respectively. The experimental results showed that the response speed and sensitivity were enhanced significantly and the high diffraction efficiency was obtained at 488 nm wavelength. This manifested that near‐stoichiometric LiNbO₃:Mn:Fe:Zr crystal was an excellent candidate for holographic storage. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Zn:Fe:LiNbO3晶体的生长及其光学性能的研究

在LiNbO3中掺进ZnO和Fe2O3,以Czochralski技术生长Zn(7mol;):Fe(0.03;):LiNbO3,Zn(3mol;):Fe(0.03;):LiNbO3和Fe(0.03;):LiNbO3晶体.测试晶体的吸收光谱,Zn:Fe:LiNbO3晶体的吸收边相对Fe:LiNbO3晶体发生紫移.测试晶体的红外光谱,Zn(7mol;):Fe:LiNbO3晶体OH-吸收峰移到3529cm-1.测试晶体抗光致散射能力,Zn(3mol;):Fe:LiNbO3晶体抗光致散射能力比Fe:LiNbO3晶体提高一个数量级,Zn(7mol;):Fe:LiNbO3晶体比Fe:LiNbO3晶体高二个数量级.测试晶体的衍射效率和响应时间,Zn:Fe:LiNbO3晶体响应时间缩短,衍射效率降低.对吸收边和OH-吸收峰移动的机理,以及Zn:Fe:LiNbO3晶体抗光致散射能力增强的机理进行了研究.     

Defect structure and optical fixing holographic storage of Mg:Mn:Fe:LiNbO3 crystals

Mg:Mn:Fe:LiNbO₃ crystals were grown by the Czochralski method. The defect structure was analyzed by UV‐vis spectra and IR spectra. The holographic storage of Mg:Mn:Fe:LiNbO₃ crystals was measured by the two color fixed method. The results show that with the increase of MgO doping concentration, the writing time becomes shorter, the dynamic range decreases, photorefractive sensitivity increases and fixing diffraction efficiency decreases. When the MgO doping concentration exceeds 4.5 mol%, the fixing diffraction efficiency approaches zero. The effect of doping Mg ions on the holographic storage properties of Mn:Fe:LiNbO₃ crystals is discussed. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and energy band gap of CaSeS thin films prepared by hot-wall epitaxy

This paper investigates preparation of CaSeS thin films using hot-wall epitaxy. These films can be grown epitaxially on cleaved BaF₂(1 1 1) at a substrate temperature of 873 K by tailoring the VI/II flux ratio vaporized from Ca and SeS resources. The optical absorption edge of these films thus tailored can be observed clearly, shifting toward higher photon energy with increasing S content. In particular, the energy band gap of CaSe_0.66S_0.34, capable of lattice-matching to InP was found to be 4.69 eV, producing considerably large band gap difference of 3.34 eV between the CaSe_0.66S_0.34 and InP.