Raman scattering characterization of Mn composition and strain in Ga1–x Mnx Sb/GaSb epitaxial layers

Raman scattering (RS) experiments have been performed for simultaneous determination of Mn composition and strain in Ga_1–x Mn_x Sb thin films grown on GaSb substrate by liquid phase epitaxy technique. The Raman spectra obtained from various Ga_1–x Mn_x Sb samples show only GaSb‐like phonon modes whose frequency positions are found to have Mn compositional dependence. With the combination of epilayer strain model, RS and energy dispersive x‐ray (EDX) experiments, the compositional dependence of GaSb‐like LO phonon frequency is proposed both in strained and unstrained conditions. The proposed relationships are used to evaluate Mn composition and strain from the Ga_1–x Mn_x Sb samples. The results obtained from the RS data are found to be in good agreement with those determined independently by the EDX analysis. Furthermore, the frequency positions of MnSb‐like phonon modes are suggested by reduced‐mass model. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Properties of AgGa1‐xInxSe2 single crystals grown by Bridgman method

High‐pure and single‐phase AgGa_1‐xIn_xSe₂ (x=0.2) polycrystalline was synthesized by the mechanical and temperature oscillation method. Adopting the modified Bridgman method an integral AgGa_1‐xIn_xSe₂ single crystal with diameter of 14 mm and length of 35 mm has been obtained at the rate of 6 mm/day. It was found that there is a new cleavage face which was (101), and observed the four order X‐ray spectrum of the {101} faces. By the method of DSC analysis the melting and freezing points of the AgGa_1‐xIn_xSe₂ (x=0.2) single crystal were about 828°C and 790°C. The transmission spectra of the AgGa_1‐xIn_xSe₂ (x=0.2) sample of 5×6×2 mm³ were obtained by means of UV and IR spectrophotometer. The limiting frequency was 774.316nm and the band gap was 1.6eV. It can be found in the infrared spectrum that the infrared transmission was above 60% from 4000cm^‐1 to 600cm^‐1. The value of α in 5.3µm and 10.6µm were 0.022cm^‐1 and 0.1cm^‐1 respectively. All results showed that the crystal was of good quality. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Crystal data and some physical properties of Tl2InGaTe4 crystals

The room temperature crystal data, Debye temperature, dark and photoelectrical properties of the Bridgman method grown Tl₂InGaTe₄ crystals are reported for the first time. The X‐ray diffraction technique has revealed that Tl₂InGaTe₄ is a single phase crystal of tetragonal body‐centered structure belonging to the space group. A Debye temperature of 124 K is calculated from the results of the X‐ray data. The current‐voltage measurements have shown the existence of the switching property of the crystals at a critical voltage of 80 V. The dark electrical resistivity and Hall effect measurements indicated the n ‐type conduction with an electrical resistivity, electron density and Hall mobility of 2.49×10³ Ω cm, 4.76×10¹² cm^–3 and 527 cm²V^–1s^–1, respectively. The photosensitivity measurements on the crystal revealed that, the variation of photocurrent with illumination intensity is linear, indicating the domination of monomolecular recombination at room temperature. Moreover, the spectral distribution of the photocurrent allowed the determination of the energy band gap of the crystal studied as 0.88 eV. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Luminescence of GaN single crystals prepared by heating a Ga melt in Na–N2 atmosphere

Colorless transparent prismatic crystals (0.5‐2.0 mm long) and hopper crystals (1.0‐2.5 mm long) of GaN were prepared by heating a Ga melt at 800°C in Na vapor under N₂ pressures of 7.0 MPa for 300 h. The photoluminescence (PL) spectrum of a prismatic crystal at 4 K showed the emission peaks of neutral donor‐bound exciton (D⁰‐X) and free exciton (X_A) at 3.472 eV and 3.478 eV, respectively, in the near band edge region. The full‐width at half‐maximum (FWHM) of (D⁰‐X) peak was 1.9 meV. The emission peaks of a donor–acceptor pair transition (D⁰‐A⁰) and its phonon replicas were observed in a lower energy range (2.9‐3.3 eV). The emission peaks of the D⁰‐A⁰ and phonon replicas were also observed in the cathodoluminescence (CL) spectrum at 20 K. The (D⁰‐X) PL peak of a hopper crystal at 4 K was at 3.474 eV (2.1 meV higher), having a FWHM of 6.1 meV which was over 3 times larger than that of the prismatic crystal. A strong broad band with a maximum intensity around 1.96 eV was observed for the hopper crystals in the CL spectrum at room temperature. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Excitation intensity and temperature‐dependent photoluminescence and optical absorption in Tl4Ga3InSe8 layered crystals

Photoluminescence (PL) spectra of Tl₄Ga₃InSe₈ layered crystals grown by Bridgman method have been studied in the wavelength region of 600‐750 nm and in the temperature range of 17‐68 K. A broad PL band centered at 652 nm (1.90 eV) was observed at T = 17 K. Variations of emission band has been studied as a function of excitation laser intensity in the 0.13 to 55.73 mW cm^‐2 range. Radiative transitions from donor level located at 0.19 eV below the bottom of conduction band to shallow acceptor level located at 0.03 eV above the top of the valence band were suggested to be responsible for the observed PL band. From X‐ray powder diffraction and optical absorption study, the parameters of monoclinic unit cell and the energy of indirect band gap were determined, respectively. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Electrical properties of PbxSn1‐xS thin films prepared by hot wall deposition method

The Pb_xSn_1‐xS (x = 0 – 0.25) thin films were prepared on glass substrates by hot wall vacuum deposition. The films were polycrystalline monophase in nature and had orthorhombic crystal structure. The thickness of the films was about 2‐3 μm. The temperature dependences of the conductivity were measured in the temperature range from 150 to 420 K. The films revealed p‐type of conductivity. The Seebeck coefficient and conductivity values of the films was in the range of α = 6 – 360 μV/K and σ = 4.8×10^‐5 – 1.5×10^‐2 Ω^‐1·cm^‐1, respectively, at room temperature depending on concentration of the lead in the films. The lead atoms created the substitution defects Pb_Sn in the crystal lattice of the Pb_xSn_1‐xS. These defects formed the donor energy levels in the band gap. The activation energy of the films increased in the range ΔE_a = 0.121 – 0.283 eV with increasing of the lead concentration. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Structural,optical and photoconductive properties of electron beam evaporated CdSxSe1‐x films

CdS_xSe_1‐x films were deposited by the electron beam evaporation technique on glass substrates at different temperatures in the range 30 – 300 °C using the laboratory synthesized powders of different composition. The films exhibited hexagonal structure and the lattice parameters shifted from CdSe to CdS side as the composition changed from CdSe to CdS side. The bandgap of the films increased from 1.68 to 2.41 eV as the concentration of CdS increased. The root‐mean‐roughness (RMS) values are 3.4, 2.6, 1.2 and 0.6 nm as the composition of the films shifted towards CdS side. The conductivity varies from 30 Ωcm^‐1 to 480 Ωcm^‐1 as the ‘x’ value increases from 0 to 1. The films exhibited photosensitivity. The PL spectrum shifts towards lower energies with decreasing x, due to the decrease of the fundamental gap with Se composition. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effect of temperature and isomorphic atom substitution on optical absorption edge of TlInS2xSe2(1‐x) mixed crystals (0.25 ≤ x ≤ 1)

The optical properties of the TlInS_2xSe_2(1‐x)mixed crystals (0.25 ≤ x ≤ 1) have been investigated through the transmission and reflection measurements in the wavelength range of 400–1100 nm. The optical indirect band gap energies were determined by means of the analysis of the absorption data. It was found that the energy band gaps decrease with the increase of selenium atoms content in the TlInS_2xSe_2(1‐x)mixed crystals. The transmission measurements carried out in the temperature range of 10–300 K revealed that the rates of change of the indirect band gaps with temperature are γ = –9.2×10^–4 eV/K, –6.1×10^–4 eV/K, –4.7×10^–4 eV/K and –5.6×10^–4 eV/K for TlInS₂, TlInS_1.5Se_0.5, TlInSSe and TlInS_0.5Se_1.5 crystals, respectively. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Photoluminescence Spectra of GaS0.75Se0.25 Layered Single Crystals

Photoluminescence (PL) spectra of GaS_0.75Se_0.25 layered single crystals have been studied in the wavelength region of 500‐850 nm and in the temperature range of 10‐200 K. Two PL bands centered at 527 ( 2.353 eV, A‐band) and 658 nm (1.884 eV, B‐band) were observed at T = 10 K. Variations of both bands have been studied as a function of excitation laser intensity in the range from 8 × 10^‐3 to 10.7 W cm^‐2. These bands are attributed to recombination of charge carriers through donor‐acceptor pairs located in the band gap. Radiative transitions from shallow donor levels located 0.043 and 0.064 eV below the bottom of conduction band to acceptor levels located 0.088 and 0.536 eV above the top of the valence band are suggested to be responsible for the observed A‐ and B‐bands in the PL spectra, respectively.     

Photoluminescence of Si or Ge nanocrystallites embedded in silicon oxide

This paper presents the results of photoluminescence, its temperature dependence and Raman scattering investigations on magnetron co-sputtered silicon oxide films with (or without) embedded Si (or Ge) nanocrystallites. It is shown the oxide related defect origin of the visible PL centers peaked at 1.7, 2.06 and 2.30 eV. The infrared PL band centered at 1.44–1.58 eV in Si–SiO_x, system has been analyzed within a quantum confinement PL model. Comparative PL investigation of Ge–SiO_x system has confirmed that high energy visible PL bands (1.60–1.70 and 2.30 eV) are connected with oxide related defects in SiO_x. The PL band in the spectral range of 0.75–0.85 eV in Ge–SiO_x system is attributed to exciton recombination inside of Ge NCs.     

Structure and optical properties of Mg‐doped ZnO nanoparticles by polyacrylamide method

Mg‐doped ZnO (Mg_xZn_1‐xO) nanoparticles with precise stoichiometry are synthesized through polyacrylamide polymer method. Calcination of the polymer precursor at 650 °C gives particles of the homogeneous solid solution of the (Mg_xZn_1‐xO) system in the composition range (x < 0.15). ZnO doping with Mg causes shrinkage of lattice parameter c. The synthesized Mg_xZn_1‐xO nanoparticles are typically with the diameter of 70–85 nm. Blue shift of band gap with the Mg‐content is demonstrated, and photoluminescence (PL) from ZnO has been found to be tunable in a wide range from green to blue through Mg doping. The blue‐related PL therefore appeared to be caused by energetic shifts of the valence band and/or the conduction band of ZnO. Mg_xZn_1‐xO nanoparticles synthesized by polyacrylamide‐gel method after modified by polyethylene glycol surfactant have a remarkable improvement of stability in the ethanol solvent, indicating that these MZO nanoparticles could be considered as the candidate for the application of solution–processed technologies for optoelectronics at ambient temperature conditions.     

Improved quality of InGaN/GaN multiple quantum wells by a strain relief layer

Different InGaN/GaN multi quantum wells (MQWs) structures were grown by metalorganic chemical vapor deposition (MOCVD). Samples were investigated by photoluminescence (PL), atom force microscopy (AFM) and double crystal X-ray diffractometry (DCXRD) to character their optical, morphological and crystal properties. By inserting the strain relief layer, the PL intensity was increased more than two times. The surface morphology was improved and the density of V-pits was reduced from 16–18×10⁸ to 6–7×10⁸/cm². Further, the interface abruptness was also improved. We attributed the improvements of the quality of InGaN/GaN MQWs to the relief of strain in the InGaN/GaN MQWs.     

Investigations for Sn diffusion in Pb1−xSnxTe and PbTe

By annealing Pb_1−xSn_xTe and PbTe isothermally in a quartz ampoule Sn diffused from Pb_1−xSn_xTe into PbTe. The profiles obtained have been investigated by means of an electron beam microanalyser, and the coefficients of diffusion have been determined at various temperatures. The diffusion of Sn can be explained by the expressions: D_PbSnTe = 1.5 · 10⁻¹ exp (−1.8 eV/kT) cm² s⁻¹ (0,14 < x < 0,18) D_PbTe = 5,5 · 10⁻⁴ exp (−1.5 eV/kT) cm² s⁻¹. N-type layers are observed at the surface of Pb_1−xSn_xTe specimens.     

Growth process and optical investigations of Nd:NaGd (MoO4)2 crystals with varying content of Nd and Gd

In this paper, [NaGd_1‐xNdx](MoO₄)₂ crystals with x = 0.005–0.05 were grown by Czochralski method at 950 ℃ for 10 hours and subsequently characterized by absorption spectroscopy and fluorescence spectroscopy. The intensity parameters of Nd³⁺ were calculated by Judd‐Ofelt theory, and the relationship between the parameters and Nd³⁺ concentration was analyzed. The results show that with the increasing Nd³⁺ concentration, the oscillator strength, stimulated emission cross‐section, Ω_t and spontaneous transition probability decrease slightly, while the fluorescence lifetime decreases significantly. However, the fluorescence branching ratio is almost unchanged with the increasing Nd³⁺concentration. The [NaGd_1‐xNd_x](MoO₄)₂ crystal with (x = 0.01) possesses the highest quantum efficiency of 88.98%, a good fluorescence line‐width of 23 nm, a large value of σ_em·τ_f up to 0.55 × 10⁻²² cm²·s and a stimulated emission cross‐section up to 3.747 × 10⁻¹⁹ cm² for the transition from ⁴F_3/2 to⁴I_11/2 at 1064 nm. Test results indicate that [NaGd_1‐xNd_x](MoO₄)₂ crystals are an excellent gain media for the solid state laser system.     

Structural,optical, electrical and luminescence properties of electron beam evaporated CdSe:In films

CdSe:In films were prepared by electron beam evaporation technique using CdSe and In₂Se₃ (purity ∼99.9%) pellets. The crystal structure of the films with and without Indium, measured by X‐ray diffraction (XRD), showed a typical wurtzite structure, higher Indium doping shifts the peak angle to higher side along with the broadening of the peaks. X‐ray photoelectron spectroscopy (XPS) studies indicated binding energies corresponding to 54 eV (Se3d_5/2), 444 eV (In 3d_5/2), 411 eV (Cd 3d_3/2), (Cd 3d_5/2). Atomic force microscope (AFM) studies indicated a uniform surface.The grain size decreases with increase of In doping. A decrease in the band gap was observed with increase of dopant concentration. Resistivity of the films is in the range of 10^‐3 Ωcm. Carrier density was in the range of 10²¹ cm^‐3 for the films. The photolumineasenec spectra (PL) spectra indicated three peaks. The peak intensity decreases as the Indium concentration increases. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Multimode phonon structure of Be‐containing II ‐ VI mixed crystals determined by IR spectroscopic ellipsometry

Spectroscopic ellipsometry in the infrared spectral range 250‐5000 cm^‐1 is used for analysis of the dielectric response of Zn_1‐x‐yBe_xMg_ySe and Zn_1‐x‐yBe_xMn_ySe crystals grown by a high‐pressure Bridgman method. Ellipsometric spectra display features in the spectral range 390‐500 cm^‐1 associated with BeSe‐type phonon modes. In the optical spectra of Zn_1‐x‐yBe_xMg_ySe crystals both BeSe‐type and MgSe‐type lattice absorption bands are detected. The MgSe‐like modes are located at approximately 300 cm^‐1. The complex dielectric functions can be reproduced using a model with two or three and one or two classical damped oscillators corresponding to the BeSe‐like and the MgSe‐like transverse‐optical phonon modes, respectively. The frequencies of longitudinal‐optical phonons have been derived from the dielectric loss functions. A red‐shift of the BeSe‐like phonons frequencies with a mean rate 0.42 cm^‐1 (0.50 cm^‐1) per mole percent of Mg (Mn) incorporated to the alloy has been found for examined concentration range x, y ≤ 0.25. A noticeable damping the intensities of BeSe‐type modes with increasing fraction of Mg and Mn dopant is observed in comparison to the strengths of BeSe‐type modes in Zn_1‐xBe_xSe crystals. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Raman scattering study on Ga1–x Mnx As prepared by Mn ions implantation,deposition and post‐annealing

Raman scattering measurements have been performed in Ga_1–x Mn_x As crystals prepared by Mn ions implantation, deposition, and post‐annealing. The Raman spectrum measured from the implanted surface of the sample shows some weak phonon modes in addition to GaAs‐like phonon modes, where the GaAs‐like LO and TO phonons are found to be shifted by approximately 4 and 2 cm^‐1, respectively, in the lower frequency direction compared to those observed from the unimplanted surface of the sample. The weak vibrational modes observed are assigned to hausmannite Mn₃O₄ like. The coupled LO‐phonon plasmon mode (CLOPM), and defects and As related vibrational modes caused by Mn ions implantation, deposition, and post‐annealing are also observed. The compositional dependence of GaAs‐like LO phonon frequency is developed for strained and unstrained conditions and then using the observed LO_GaAs peak, the Mn composition is evaluated to be 0.034. Furthermore, by analyzing the intensity of CLOPM and unscreened LO_GaAs phonon mode, the hole density is evaluated to be 1.84×10¹⁸ cm^‐3. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

X‐ray diffraction analysis of powder and thin film of (Gd1‐x Yx)2O3 prepared by sol‐gel process

The mixed oxide (Gd_1‐xY_x)₂O₃ (0.0 ≤ x ≤ 1.0) were synthesized, as powder and thin film, by a sol‐gel process. X‐ray diffraction data were collected and crystal structure and microstructure analysis were performed using Rietveld refinement method. All samples were found to have the same crystal system and formed solid solutions over the whole range of x. The cationic distribution, Gd³⁺ and Y³⁺, over the two non‐equivalent sites 8b and 24d of the space group Ia3 is found to be random for all values of (x). The lattice parameter is found to vary linearly with the composition (x). Replacing Gd³⁺ and Y³⁺ by each other introduces a systemic decrease in the x‐coordinate of cation position (24d) and slight changes in the oxygen coordinates. Crystallite size and microstrain analysis is performed along different crystallographic directions and anisotropic changes are found with the composition parameter (x). The average crystallite size ranges from 75 to 149 nm and the r.m.s strain from 0.027 to 0.068 x10^‐2. Textured Gd_1.841Y_0.159O₃ (400) buffer layers, with a high degree of alignment in both out‐plane and in‐plan, are successfully grown on cube textured Ni (001) tape substrates by sol–gel dip coating process. The resulting buffer layers are crack‐free, pinhole‐free, dense and smooth. YbBa₂Cu₃O_7‐x (YbBCO) thin film could be (00l) epitaxially grown on the obtained buffer layer using sol–gel dipping technique. (© 2007 WILEY ‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Structure,microstructure and magnetic properties of mixed rare earth oxide (Dy1‐xErx)2O3

The mixed rare earth oxide (Dy_1‐xEr_x)₂O₃ (0.0 ≤ x ≤ 1.0) were synthesized by a sol–gel process. X‐ray and neutron diffraction data were collected and crystal structure and microstructure analyses were performed using Rietveld refinement method. All samples were found to have the same crystal structure and formed solid solutions over the whole range of x. Preferential cationic distribution is found for all samples but with different extent with Dy³⁺ preferring the 8b among the two non‐equivalent sites 8b and 24d of the space group Ia3. The lattice parameter is found to vary linearly with the composition x and a systematic variation is found in the r.m.s microstrain . Magnetization measurements were done in the temperature range 5‐300 K and a behavior in accordance with Curie‐Weiss law was found. Anomalous concentration dependence is found in magnetic susceptibility which is ascribed to the concentration dependence of effective crystal field combined with the contribution of ⁴I_15/2 and ⁶H_15/2 manifold at elevated temperature. The effective magnetic moments μ_eff is found to decrease linearly with composition parameter x, except for sample x=0.5 where the magnetization is enhanced. The Curie‐Weiss paramagnetic temperatures indicated antiferromagnetic interaction. These magnetic results are discussed in view of the cationic distribution. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and characterization of thiourea mixed cadmium – lead chloride – a nonlinear optical crystal

Nonlinear optical (NLO) crystal of thiourea mixed cadmium–lead chloride dihydrate Cd[(PbCl₃)(NH₂CSNH₂)].2H₂O (TCCPC) have been grown in solution by slow evaporation technique at room temperature. The powder X‐ray diffraction pattern has been recorded and indexed. The UV‐Vis‐NIR transmittance and FT‐IR spectrum have been recorded in the range 200‐1090 nm and 400‐4000 cm^‐1, respectively. The lower cut‐off wavelength is 280 nm in the UV region, which is higher than that of pure Cd(PbCl₃) (CCPC) crystal. The presence of functional groups has been confirmed by FT‐IR analysis. The TCCPC crystal was characterized by SEM and EDX spectrum. The second harmonic generation (SHG) of the thiourea mixed cadmium–lead chloride (TCCPC) crystal is demonstrated by the Kurtz Perry method using Nd:YAG laser and the results confirm that the grown crystal is roughly three times more efficient than ADP. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)