Heat capacity of Ag6Ge10p12 from 180 to 550 K

The molar heat capacity at constant pressure of Ag₆Ge₁₀P₁₂ is measured in the temperature range from 180 to 550 K and the standard molar enthalpies and entropies relative to 298.15 K are calculated on the basis of these data. From a comparison of the temperature variation of the apparent Debye temperatures in CuGe₂P₃ and Ag₆Ge₁₀P₁₂ it is concluded that lattice anharmonicity is more pronounced in Ag₆Ge₁₀P₁₂ than in CuGe₂P₃.     

Infrared lattice vibrations in CuGe2P3

Infrared reflectivity spectra of CuGe₂P₃ single crystals are measured at room temperature in the wavenumber range from 180 to 4000 cm⁻¹. From an analysis of the spectra the parameters of five vibrational modes are determined. The results are discussed in terms of the Keating model and are compared with lattice vibrational data for ZnGeP₂, CdGeP₂, and CuSi₂P₃.     

Infrared optical properties of (CuGe2P3)1−x(6 Ge)x solid solutions

Infrared reflectivity spectra of (CuGe₂P₃)_1−x(6 Ge)_x mixed crystals with compositions in the range x = 0.07–0.33 are measured at room temperature in the wavenumber range from 180 to 4000 cm⁻¹. An analysis of the spectra reveals six vibrational modes. The composition dependence of the mode frequencies and of the free carrier concentration and mobility is given and compared with infrared optical data for CuGe₂P₃.     

Enantiomorphism of the Ca3Ga2Ge4O14 compound and comparison of the Ca3Ga2Ge4O14 and Sr3Ga2Ge4O14 structures

The absolute crystal structures of two enantiomorphic forms of the Ca₃Ga₂Ge₄O₁₄ crystals (a = 8.075(1) ?, c = 4.9723(6) ?, space group P321) with the positive and negative senses of the optical activity are determined using X-ray diffraction analysis. The final R factors are as follows: R = 1.75% and R _w = 2.57% for the crystal with the positive sense of the optical activity and R = 1.86% and R _w = 2.78% for the crystal with the negative sense of the optical activity. The replacement of the Ca²⁺ ions by larger Sr²⁺ ions (with the formation of the Sr₃Ga₂Ge₄O₁₄ compound) leads to an anisotropic expansion of the crystal lattice (with a more considerable increase in the lattice parameter a as compared to the lattice parameter c), a change in the occupation of the 1a and 3f positions by the Ga³⁺ and Ge⁴⁺ ions, and symmetrization of the octahedra and tetrahedra forming the structural framework. The shape of the dodecahedron changes so that its size along the polar electric axis 2 increases significantly. This change is the main factor responsible for the increase in the piezoelectric activity of the Sr₃Ga₂Ge₄O₁₄ compound as compared to the piezoelectric activity of the Ca₃Ga₂Ge₄O₁₄ compound. Original Russian Text ? B.V. Mill, A.A. Klimenkova, B.A. Maximov, V.N. Molchanov, D.Yu. Pushcharovsky, 2007, published in Kristallografiya, 2007, Vol. 52, No. 5, pp. 816–823.     

High-temperature heat capacity,thermodynamic properties and debye temperature of CuGe2P3

The heat capacity at constant pressure of CuGe₂P₃ is measured in the temperature range from 180 to 550 K. Standard enthalpies and entropies relative to 298.15 K are calculated from the heat capacity data. The Debye temperature in the high-temperature limit is estimated to be about 710 K.     

Crystal growth and scintillating properties of (Pr,Si)‐doped YAlO3

This paper deals with Pr‐doped and Pr, Si‐codoped YAlO₃ single crystal growth by the micro‐pulling‐down method and investigation of their spectroscopic and scintillating properties. The Pr³⁺ 5d ‐4f radioluminescence intensity is more than 10 times higher than that of Bi₄Ge₃O₁₂ standard sample, but the Si‐codoping decreases it. Absorption spectra of as‐grown and air‐annealed Si,Pr‐codoped YAlO₃ samples show along with an onset of 4f ‐5d transition round 230 nm the induced absorption band at 400 nm which possibly related to a hole center absorption (Pr⁴⁺ or O^‐). Thermoluminescence measurements above the room temperature were performed in order to monitor deep electron traps. Strong concentration dependence of thermoluminescence was observed for Pr:YAlO₃ glow curves. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

X-ray determination of thermal lattice expansion of CuSi2 + xP3 (x = 1, 2) at elevated temperatures

CuSi₂P₃ is a semiconductor having sphalerite structure with the space group F3 3m with random distribution of the copper and silicon atoms on the cation sites. Silicon is soluble in CuSi₂P₃ upto 3 moles to form CuSi_{2 + x}P₃ (x = 1, 2, 3) compounds in single phase. In continuation of our work on thermal expansion of ternary semiconductors, CuSi₃P₃ crystals have been grown by a modified Bridgman method. Using a Unicam high temperature camera, the precision lattice parameter and the coefficient of thermal expansion (CTE) of CuSi₃P₃ at various high temperatures have been evaluated from X-ray diffraction data. It has been found that the lattice parameter increases non-linearly while the coefficient of thermal expansion increases linearly with temperature. The results on thermal expansion of various semiconductors have been discussed in terms of their ionicities.     

Growth and magnetic‐optical properties of Sr3Gd(BO3)3 and Sr3TbxGd1‐x(BO3)3 single crystals

Single crystals of Sr₃Gd(BO₃)₃ (SGB) and Sr₃Tb_xGd_1‐x(BO₃)₃ (TSGB) with dimension Ø 20 mm×20 mm have been grown by Czochralski method. The grown crystals were characterized by X‐ray powder diffraction analysis which showed the crystals belong to hexagonal structure with lattice parameters of a=b=1.254 nm, c=0.926 nm (SGB) and a=b=1.253 nm, c=0.925 nm (TSGB). In TSGB, x=17.7% was obtained by X‐ray fluorometry which showed the segregation coefficient of Tb is closed to 1. The transmission spectrum was measured, which indicated the crystals have high transmittance in 400‐1100 nm region. The Faraday rotation of single crystals at 532 nm wavelength was measured at room temperature. Finally, the Verdet constants were investigated, (SGB) V=17.9 degcm^‐1T^‐1 and (TSGB) V=21.3 degcm^‐1T^‐1. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

High temperature x‐ray diffraction studies of zirconia thin films prepared by reactive pulsed laser deposition

Zirconium oxide thin films have been deposited on Si (100) substrates at room temperature at an optimized oxygen partial pressure of 3x10^‐2 mbar by reactive pulsed laser deposition. High temperature x‐ray diffraction (HTXRD) studies of the film in the temperature range room temperature‐1473 K revealed that the film contained only monoclinic phase at temperatures ≤ 673 K and both monoclinic and tetragonal phases were present at temperatures ≥ 773 K. The tetragonal phase content was significantly dominating over monoclinic phase with the increase of temperature. The phase evolution was accompanied with the increase in the crystallite size from 20 to 40 nm for the tetragonal phase. The mean thermal expansion coefficients for the tetragonal phase have been found to be 10.58x10^‐6 K^‐1 and 20.92x10^‐6K^‐1 along a and c‐axes, respectively. The mean volume thermal expansion coefficient is 42.34x10^‐6 K^‐1 in the temperature range 773‐1473 K. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Microwave dielectric properties of (1‐x)La(Mg0.5Sn0.5)O3‐x(Sr0.8Ca0.2)3Ti2O7 ceramic system with a near zero temperature coefficient of resonant frequency

In this study, the microwave dielectric properties of (1‐x)La(Mg_0.5Sn_0.5)O₃‐x(Sr_0.8Ca_0.2)₃Ti₂O₇ ceramic system prepared by the conventional solid‐state method have been investigated for application in mobile communication. It was found that the diffraction peaks of (1‐x)La(Mg_0.5Sn_0.5)O₃‐x(Sr_0.8Ca_0.2)₃Ti₂O₇ ceramic system shift to higher angles as x increases from 0.2 to 0.4. It was also found that the X‐ray diffraction patterns of the 0.8La(Mg_0.5Sn_0.5)O₃‐0.2(Sr_0.8Ca_0.2)₃Ti₂O₇ ceramics exhibited no significant phase difference at different sintering temperatures. The average grain size of the (1‐x)La(Mg_0.5Sn_0.5)O₃‐x(Sr_0.8Ca_0.2)₃Ti₂O₇ ceramic system decreased from 6.4 to 4.3 μm as the value of x increased from 0.2 to 0.4 sintered at 1550 °C for 4 h. The dielectric constant increased from 26.6 to 35.9 and the quality factor (Q×f) decreased from 31,600 to 23,300 GHz for (1‐x)La(Mg_0.5Sn_0.5)O₃‐x(Sr_0.8Ca_0.2)₃Ti₂O₇ ceramic system as the x value increases from 0.2 to 0.4 sintered at 1550 °C for 4 h. The average value of temperature coefficient of resonant frequency (τ_f) increased from ‐18 to +8 ppm/ K as the x value increases from 0.2 to 0.4. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

In‐situ investigation of the temperature dependent structural phase transition in CuInSe2 by synchrotron radiation

The temperature dependent structural phase transition from the tetragonal chalcopyrite like structure to the cubic sphalerite like structure in CuInSe₂ was investigated by in‐situ high temperature synchrotron radiation X‐ray diffraction. The data were collected in 1K steps during heating and cooling cycles (rate 38 K/h). The Rietveld analysis of the diffractograms led us to determine the temperature dependence of the lattice parameters, including the tetragonal deformation, |1‐η|, and distortion |u‐¼| (η=c/2a, a and c are the tetragonal lattice constant; u is the anion x‐coordinate). The thermal expansion coefficients α_a and α_c of the tetragonal lattice constant which are related to the linear thermal expansion coefficient α_L were obtained, as were α_a of the cubic lattice constant, also α_u and α_η. The transition temperature is clearly identified via a strong anomaly in α_L. The temperature dependence of the anion position parameter was found to be rather weak, nearly α_u∼0, whereas α_η increases slightly. However, both increase strongly when approaching to within 10 K of the transition temperature (the critical region) and |1‐η| as well as |u‐¼| go to zero with |T‐T_trans|^0.2 approaching the phase transition. The cation occupancy values, derived from the Rietveld analysis, remain constant below the critical region. Close to the transition temperature, the number of electrons at the Cu site increases with a dercrease in the number of electrons at the In site with increasing temperature, indicating a Cu‐In anti site occupancy, which is assumed to be the driving force of the phase transition. At the transition temperature 67% of Cu⁺ were found to occupy the Me1 site with a corresponding 67% of In³⁺ at the Me2 site. Although full disorder is reached with 50%, this level seems to be high enough that the phase transition takes place. The order parameter of the phase transition, goes with |T‐T_trans|^β to zero with the critical exponent β=0.35(7) which is in good agreement to the critical exponent β=0.332 calculated for order‐disorder transitions according to the Ising model. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Concentration distribution of Nd3+ In Nd:Gd3Ga5O12 crystals studied by optical absorption method

Nd:Gd₃Ga₅O₁₂ crystals with different concentrations of Nd³⁺ were grown by Czochralski method, their absorption spectra were measured at room temperature. By using the optical absorption method, the effective distribution coefficient k_eff for Nd³⁺ in GGG was fitted to be 0.40±0.01, which is higher than that of Nd³⁺ in YAG. The 808nm absorption cross‐section was calculated to be 4.0±0.2×10^‐20cm^‐2. The lengthways and radial concentration distribution of Nd³⁺ in the crystals were also analyzed and discussed. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and ionic conductivity of Li3 + x P1 − x GexO4 (x = 0.34) single crystals

Li_{3 + x} P_{1 ? x} Ge_xO₄ crystals (x = 0.34) with dimensions of about 3 × 3 × 5 mm³ were grown for the first time from flux. The conductivities of the crystals measured along three directions have close values and are equal to σ ≈ 1.8 × 10^?6 and 3.7 × 10^?2 Sm/cm at the temperatures 40 and 400°C, respectively (similar to the case of pure lithium phosphate, somewhat lower values of electric conductivity were measure along the b axis). The activation energy of conductivity is equal to 0.54 eV. A considerable increase in the conductivity of the solid solution in comparison with the conductivity of pure lithium phosphate is explained by the specific features of the lithium sublattice in the crystal structure of the λ-Li₃PO₄ type.     

Studies on the growth and optical characterization of Tm3+‐doped BaY2F8 single crystals

The BaY₂F₈ crystals doped with different concentrations of Tm³⁺ ions were prepared by the temperature gradient technique (TGT). X‐ray powder diffraction was applied to analyze the phase. The cracking phenomenon along (010) and (100) planes of the crystals grown by temperature gradient technique was studied on the basis of the structure of BaY₂F₈ crystals. The absorption spectra were measured and investigated in the ultraviolet‐visible and near‐infrared ranges at room temperature. Several characteristic absorption bands of Tm³⁺‐doped BaY₂F₈ crystal were observed. The emission and excitation spectra were obtained and investigated at room temperature and 12 K, showing the characteristic emission peaks of Tm³⁺ ions. The temperature dependence of Photoluminescence curve was also investigated in the range of 12–296 K. The luminescence intensity of emission bands decreased with increasing temperature, while the effective bandwidth increased. The up‐conversion spectrum excited at 650 nm was recorded and up‐conversion mechanism was analyzed in detail. The result showed the purple, green and yellow emissions corresponding to ³P₁→³F₃, ¹D₂→³H₅ and ³P₀→¹G₄ transitions, respectively.     

Luminescence characteristics of undoped and Eu‐doped GdCa4O(BO3)3 single crystals and nanopowders

Single crystals of GdCa₄O(BO₃)₃ (GdCOB) pure and doped with Eu concentration of 1 and 4 at% were grown by the Czochralski and micropulling‐down methods. The distribution of Eu ions in GdCOB crystals was uniform. The substitutions of Eu³⁺ in Gd, Ca(1) and Ca(2) cation sites and eventually formation Eu²⁺ have been investigated. The spectroscopic properties of crystals are compared with the properties of nanopowders obtained by sol‐gel method. Radioluminescence spectra of undoped GdCOB crystal show the characteristic emission of Gd³⁺ at about 312 nm, whereas this emission dramatically decreases in Eu‐doped crystals upon X‐ray excitation, as well as in Eu‐doped nanopowders excited in vacuum ultraviolet (VUV) region. The VUV excitation in the range 125‐333 nm for Eu‐doped samples leads to strong emission in red coming from the ⁵D₀ multiplet of Eu³⁺, only. In the photoluminescence decay kinetics of 312 nm emissions substantial shortening and departure for single exponential decay in Eu‐doped samples is clearly observed. Higher Eu doping results in further acceleration of the decay. In undoped GdCOB crystal, the lifetime of the Gd^{3+ 6}P_7/2 multiplet is 2.79 ms. The Eu^{3+ 5}D₀ decay kinetics monitored at 613 nm are rather constant. Numerical fitting of fully exponential curves, reveals lifetimes 2.7 ms for nanopowder and 2.5 ms for single crystal. The results suggest that this material may be used as a red phosphor in plasma display panels in nanopowder form because of strong excitation band of Eu³⁺ luminescence in the 160‐200 nm regions. Contrary to nanopowder sample, such an excitation band, attributed to the Gd³⁺–O^2– charge transfer was not observed in crystal obtained by the micropulling‐down method. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

The influence of Yb3+ concentration on Yb:YAl3(BO3)4

The Yb:YAl₃(BO₃) ₄ crystals with different Yb³⁺ doping concentration have been grown by the flux method. The lattice parameters and decomposition of the Yb:YAl₃(BO₃)₄ crystal with different Yb³⁺ doping concentration were measured by X‐ray and DTA method. The transmission and fluorescence spectra of Yb³⁺:YAl₃(BO₃)₄ crystal have been measured. The growth defects of Yb_xY_1‐xAl₃(BO₃)₄ crystals were also detected by using the chemical etching method. The results show that the ytterbium concentration influences these properties of Yb:YAl₃(BO₃)₄. As the Yb³⁺ concentration increased, the crystal lattice parameter was decreased. At high doping level, the absorption peak concerned at about 980 nm shift to short wavelength. It is also found that the perfection of Yb:YAl₃(BO₃) ₄ crystal with low Yb³⁺ doping concentration is better than that with high Yb³⁺ concentration. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

X-ray determination of thermal expansion of Na(ClO3)x(BrO3)1−x mixed crystals

Lattice constants of sodium chlorate and sodium bromate and their mixed crystals were determined over the temperature range from room temperature to 320 °C. The observed lattice constants for the various compositions show strong deviations from those expected from Vegard's rule. The lattice constants at various temperatures were fitted to polynomials of type a = a₀ + a₁t + a₂t². The linear coefficients of expansion for the Na(ClO₃)_x · (BrO₃)_1−x series varies non-linearly with composition showing negative deviations from linearity.     

Growth of Nd:Sr3Ga2Ge4O14 crystals by a modified Bridgman method

Bridgman growth of Nd:SGG (Sr₃Ga₂Ge₄O₁₄) crystals has been investigated for the first time. Pt crucible of ∅︁25mm×250mm with a seed well of ∅︁10mm×80 mm is used, and seed is SGG crystal of ∅︁10mm×50mm grown by Bridgman method in advance. The growth parameters are optimized as the furnace temperature is set to 1450∼1500°C, temperature gradient in the crystal‐melt interface is less than 25 K/cm and growth rate is less than 0.5mm/h. The Nd:SGG crystals with 25mm in diameter and 60mm in length are grown successfully from 1.5 to 8at% Nd³⁺ doped stoichiometric Sr₃Ga₂Ge₄O₁₄ melt. The distribution coefficient and concentration of Nd³⁺ in Nd:SGG crystals are obviously higher than those of Nd:YAG crystal. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Structure,microstructure and magnetic properties of mixed rare earth oxide (Dy1‐xErx)2O3

The mixed rare earth oxide (Dy_1‐xEr_x)₂O₃ (0.0 ≤ x ≤ 1.0) were synthesized by a sol–gel process. X‐ray and neutron diffraction data were collected and crystal structure and microstructure analyses were performed using Rietveld refinement method. All samples were found to have the same crystal structure and formed solid solutions over the whole range of x. Preferential cationic distribution is found for all samples but with different extent with Dy³⁺ preferring the 8b among the two non‐equivalent sites 8b and 24d of the space group Ia3. The lattice parameter is found to vary linearly with the composition x and a systematic variation is found in the r.m.s microstrain . Magnetization measurements were done in the temperature range 5‐300 K and a behavior in accordance with Curie‐Weiss law was found. Anomalous concentration dependence is found in magnetic susceptibility which is ascribed to the concentration dependence of effective crystal field combined with the contribution of ⁴I_15/2 and ⁶H_15/2 manifold at elevated temperature. The effective magnetic moments μ_eff is found to decrease linearly with composition parameter x, except for sample x=0.5 where the magnetization is enhanced. The Curie‐Weiss paramagnetic temperatures indicated antiferromagnetic interaction. These magnetic results are discussed in view of the cationic distribution. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

X-ray diffraction study of Na2OGeO2 melts

The structure of Na₂OGeO₂ melts in the temperature range from 1100 to 1150°C has been investigated with the high temperature X-ray diffraction technique. Comparing the radial distribution functions obtained for the melts with those for the corresponding glasses, the first peak due to the GeO interatomic distance is invariant upon melting, although it becomes broader due to thermal vibration. The second peak for the GeGe interatomic distance for melts shifts toward the large distance, which is explained by broadening of the GeOGe bond angle, not by the thermal expansion of the GeOGe bond. The composition dependences of GeO distances and coordination numbers of the Ge⁴⁺ ion of the melts are found to be almost the same as the corresponding glasses, indicating that even in melts at such high temperatures 6-fold coordinated Ge⁴⁺ ions are present and their content changes with the Na₂O content as in the case of the corresponding glasses.