Synthesis,characterization and impedance spectroscopy of the new material [(CH3) (C6H5) 3P] 2CoBr4: a member of the A2BX4 family

The crystal structure of bis‐(methyltriphenylphosphonium) tetrabromocobaltate (II), [(C₁₉H₁₈P)₂ CoBr₄] is determined: M_r = 933.203, monoclinic, P2₁, a = 9. 6977 (3) Å, b = 12.5547 (4)Å, c = 16.4503 (6)Å, β = 105.603 (2)°, V = 1929.04 (11)ų, Z = 2, D_x = 1.607 Mg m^‐3, T = 298 K. Differential thermal analysis at high temperatures shows three endothermic peaks characterizing four phases, with onset temperatures at T₁= 313±2 K, T₂ = 320±4 K and T₃= 360±1 K. The structural instability detected via the temperature dependence of permittivity at T₁ is ascribed to order‐disorder transition associated with cation dipole reorientation. Permittivity and ac conductivity studies as a function of temperature (295 K‐375 K) and frequency (0.11 kHz < f <100 kHz) are presented. The results indicate the importance of the cation size and shape on the phase transitions in the system. Bulk conductivity behavior is thermally activated. The associated activation energies are in the range 2.9 to 1.0 eV depending on the temperature regime. Two contributions to the ac conductivity, one dominating at low temperatures and high frequencies which are characterized by superlinear frequency exponent and the second dominates at high temperatures characterized by a sublinear frequency exponent. The behavior is interpreted in terms of the jump relaxation model. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Electrical properties of AgGaSe2 epitaxial layers

Epitaxial layers of AgGaSe₂ with thicknesses in the range from 50 to 70 nm were deposited onto (111)A-oriented semi-insulating GaAs substrates by flash-evaporation in the substrate temperature range T_S = 825 … 900 K. Films grown at T_S ≦ 850 K are n-type conducting whereas p-type conductivity was observed at T_S ≧ 875 K. In the p-type samples two acceptor states with ionization energies of 60 and 410 meV were found from an analysis of the electrical measurements.     

Aging,glass transition,supercooled and equilibrium liquid states of alkali germanate glasses studied by Brillouin scattering

The elastic properties of alkali germanate glasses, xR₂O?(100 ? x)GeO₂ (R = Li, Na, K, Rb, Cs ; x = 14, 28), have been studied by Brillouin scattering in the wide temperature range up to 1200 °C. The remarkable aging effect of Brillouin shift Δν_L has been observed below a glass transition temperature T_g ≈ 500 °C. The temperature dependence of longitudinal sound velocity V_L of well annealed glasses shows the gradual decrease below T_g, while on further heating the remarkable decrease is observed above T_g. The scaled temperature dependence of V_L is nearly independent on alkali metals below the melting temperature T_m. While on further heating above T_m, the drastic decrease of V_L and increase of α_L show the remarkable alkali dependence. It may be attributed to the appearance of dynamic process related to ionic hopping of alkali metals released from glass network above T_m.     

Magnetic and Dielectric Properties in Multiferroic Y-type Hexaferrite

Polycrystalline samples of Ba_0.5Sr_1.5Zn₂(Fe_0.96Al_0.04)₁₂O₂₂ were synthesized by solid-state reaction method, and structural, magnetic and dielectric properties were investigated. The magnetic data indicate four magnetic spin-order structures exist in the samples. The Curie temperature is found to be 712 K. The sample also exhibits obvious dispersion in dielectric permittivity and dielectric loss values as a function of the frequency at room temperature, which may be interpreted as Maxwell-Wagner type dielectric relaxation.     

Growth and dielectric properties of Ta2O5 single crystal by the floating zone method

Large Ta₂O₅ single crystal with high‐dielectric permittivity was successfully grown by floating zone (FZ) method under air atmosphere. The grown crystal that has been obtained was typically about 8 mm in diameter and 90 mm in length. The crystal growth parameters were optimized. The crystal symmetry, characterized by means of X‐ray diffraction (XRD), was found to be tetragonal. The relative permittivity and loss tangent along growth and [001] direction were measured in the temperature range between ‐200 °C and 200 °C, which showed a strong dielectric anisotropy. At a frequency of 1 MHz and 20 °C, the dielectric permittivity along the growth direction and [001] direction are 81.17 and 25.04 respectively. The stabilization of high‐temperature phase can explain the dielectric enhancement.     

Dielectric Behavior of Nematic Liquid Crystals under DC Electric Field

Dielectric behavior of nematic liquid crystals of p-methoxybenzylidene-p-n-butylaniline and p-ethoxybenzylidene-p-n-butylaniline have been investigated under DC electric field in relation to their optical behavior. Both dielectric permittivity and transmitted light intensity decrease at a threshold voltage of external DC electric field, and the latter reaches a constant low value at higher field, while dielectric permittivity increases via minimum to approach a constant value at higher field strength of about 2 × 10⁴ V/cm. Such a change of dielectric permittivity under DC electric field is characteristic of nematic and supercooled states, and exhibits large dependence on both temperature and sample thickness. This dielectrical observation is discussed in terms of dielectric anisotropy of the nematic liquids oriented to the field, and the disturbance of molecular orientation due to the dynamic scattering at higher DC electric field.     

Magnetic Susceptibility in 2D Superconductor NaxHfNCl System

Abstract

Superconducting critical temperature, T_c and the shielding volume fraction, SVF, of layered nitride superconductor Na_xHfNCl have been studied as a function of x, i.e. Na concentration. Although T_c decreases gradually with increasing x from 20.0 K at x=0.11 to 16.5 K at x=0.85, SVF has a sharp peak around x=1/6, where strong coupling between local ordering of Na atoms and Fermi surface instability can be expected. Structural disorder in the samples above x=0.5, observed by powder neutron diffraction, does not affect the superconductivity appreciably. Electronic specific heat coefficient, γ, is estimated to be about 7.7 mJ/mol/K² by its difference of magnetic susceptibility between HfNCl and Na_0.5HfNCl. The γ value is relatively small compared with the high T_c value, revealing double honeycomb lattice system as new potential higher T_c superconductor series by intercalation.     

Effect of Pressure on Antiferromagnetic Transition in Alkali-Electro-Sodalite

Abstract

Pressure (0–19 kbar) and temperature (4–300 K) dependent EPR study of Sodium-Electro-Sodalite (SES) is presented. SES, which consists of a bcc sub-lattice of F-centers supported by a zeolite-like framework, is known to be a Mott insulator at room temperature. On cooling, SES undergoes an AF transition at 48±2 K providing the first example of an s-electron antiferromagnet. We find that the width of the EPR resonance above T _N is influenced not only by a strong exchange interaction, but also by a fast spin-lattice relaxation. Also, with increasing pressure, T _N decreases linearly and extrapolates to 0 K at about 65 kbar. The reason for this seemingly unexpected behavior is briefly discussed.     

Elastic and dielectric properties of A<Superscript>II</Superscript>B<Stack><Subscript>2</Subscript><Superscript>V</Superscript></Stack> (<Emphasis Type="Italic">A</Emphasis> = Cd or Zn, <Emphasis Type="Italic">B</Emphasis> = P or As) single crystals

Elastic and dielectric properties of CdP₂, ZnP₂, and ZnAs₂ single crystals are investigated at frequencies of 10², 10³, 10⁴, 10⁶, and 10⁷ Hz in the [00l], [h00], and [hk0] directions in the temperature range 78–400 K. The elastic constants, the Gruneisen parameters, and the force constants of the crystals are calculated from the measured ultrasonic velocities. The elastic constants C_ij decrease with an increase in temperature and anomalously change in narrow (ΔT = 10–20 K) temperature ranges. The permittivity sharply increases from ε ≈ 7–14 at 78–150 K to ε ≈ 10²–10³ in the temperature range 175–225 K without any signs of a structural phase transition. The behavior of the temperature-frequency dependences of the complex permittivity ε*(f, T) is typical of relaxation processes. The dielectric relaxation in A^IIB ₂ ^V is considered on the basis of the model of isolated defects. The conuctivity σ of the single crystals under study is a sum of the frequency-dependent (hopping) conductivity σ_h and the conductivity σ_s that is typical of semiconductors. The hopping conductivity increases with an increase in frequency according to the law σ _h ～f^α, where α < 1 at low temperatures and α > 1 at high temperatures.     

Growth and electrical properties of epitaxial CuInS2 thin films on GaAs substrates

CuInS₂ thin films with thicknesses in the range of 500 Å were deposited onto semi-insulating (111) A-oriented GaAs substrates by flash evaporation in the substrate temperature range T_sub = 570 … 870 K. Epitaxial growth begins at T_sub = 645 K. The films had always the chalcopyrite structure. Indications to a transition from the chalcopyrite phase to the sphalerite phase were observed at T_sub = 870 K. Films grown at T_sub ≦ 800 K showed n-type conductivity whereas at growth temperatures T_sub ≧ 850 K the films were always p-type conducting. A donor level and an acceptor level with ionization energies of 0.24 eV and 0.22 eV, respectively, were found from an analysis of the electrical measurements.     

Crystallizaton Characteristics of the Alternating Tetrafluoroethylene-Ethylene Copolymer

The alternating tetrafluoroethylene-ethylene (TFE-E) copolymer has been studied with respect to its crystallization by using differential scanning calorimetry and optical microscopy. The value of the specific surface energy σ at the melt/crystal interface is calculated to be about 2 · 10⁻³ J/m². The nucleating activity Φ of TiO₂ particles introduced into TFE-E copolymer is estimated to be approximately 0.9. The temperature dependence of the nucleation rate and of the linear growth velocity are constructed in the whole region from the melting temperature T_m to the vitrification temperature T_g. The minimum cooling rate for the formation of a crystal-free TFE-E copolymer glass is calculated and its value amounts to 10⁴ K · min⁻¹.     

Invar effect in PbFe<Subscript>1/2</Subscript>Nb<Subscript>1/2</Subscript>O<Subscript>3</Subscript> ceramics

High-density lead ferroniobate PbFe_1/2Nb_1/2O₃ (PFN) is prepared by conventional ceramic technology. Its structural properties are studied in a wide temperature range (293 ≤ T ≤ 973 K). The following chain of phase transitions is established in the vicinity of the transition to the polar phase: Rh (rhombohedral phase) (T < 363 K) → Psc (pseudo-cubic phase) (363 < T < 387 K) → C (cubic phase) (T > 387 K). The paraelectric range contains five ranges of constant unit-cell volume (invar effect): I (387 ≤ T ≤ 413 K), II (433 ≤ T ≤ 463 K), III (553 ≤ T ≤ 613 K), IV (743 ≤ T ≤ 773 K), and V (798 ≤ T ≤ 823 K). It is shown that the anomalous behavior of the PFN dielectric characteristics above the Curie temperature, which was revealed previously, is associated with the specific features of its real (defect) structure, which is caused by the crystal-chemical specificity of the main structure-forming agents: α-Fe₂O₃ and α_ht-Nb₂O₅.     

Dielectric characteristics of neodymium heptamolybdate crystals grown by gel encapsulation technique

Results obtained from the dielectric studies of neodymium heptamolybdate crystals grown in the system Nd(NO₃)₃ –MoO₃ –NH₄OH– HNO₃ —Na₂SiO₃ by gel encapsulation technique are presented. The variation of dielectric constant (ε′), dielectric loss (tanδ) and conductivity (σ) with frequency at different temperatures is studied. The dielectric constant of the material increases sharply, attains a peak value and then decreases rapidly, as material's temperature rises from room temperature to higher degrees. The temperature at which the peak value is attained is the transition temperature of the material. Dielectric loss (tan δ) follows almost a similar behaviour. The conductivity (σ) is also found to be temperature-and frequency-dependent. This sharp rise in ε′ is attributed to the contribution from space charge polarization. Theoretically obtained data using the expression ε′ = a₀ + a₁ T² and —In σ = a + b(T — T₀)² for T < T₀) fits very well with the experimentally obtained data indicating that space charge polarization increases as some power of temperature larger than one.     

Dielectric constant,loss factor and ac conductivity of Ni2+‐doped K2ZnCl4 crystals in the ferroelectric‐commensurate,incommensurate and normal phases

The dielectric constant (ϵ), dielectric loss (tanδ) and ac conductivity (σ_ac) of virgin and thermally cycled undoped and Ni²⁺‐doped K₂ZnCl₄ (KZC) crystals in the ferroelectric‐commensurate (FC), incommensurate (IC) and normal phases (N) have been studied. Anomalous behaviour at the two‐phase transition points was observed while measuring ϵ along the polar a‐axis for the undoped sample. With increasing Ni²⁺concentration a systematic shift of the phase transition temperature towards lower values and a continuous inhibition of the peak height were detected. ϵ changed linearly with lnf up to f =10⁵ Hz. tanδ along the a‐axis declared the phase transitions by peak changes. After Ni²⁺‐doping this behaviour was preserved at the FC‐IC phase transition point while the IC‐N phase transition was manifested by a change in the slope of the straight line representing the tanδ‐T dependence. The ac conductivity changed lineally with frequency according to a relation of the form σ_ac = σ_o f ^β where 0>β>1.9. σ_ac increased monotonically with increasing temperature and doping concentration in the low‐temperature phases tending to merge in one straight‐line with high activation energy that might be due to superionic dc conduction in the high temperature N‐phase. Doping with Ni²⁺ pinned stripples, decreased the soliton‐soliton interaction, weakened discommensuration effects, shortened the IC‐phase and strongly affected the ‘chaotic' behaviour at the T_C‐IC. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Crystal Growth and Elastic Properties of Hopeite,Zn3(PO4) · 4 H2O

Single crystals of orthorhombic Zn₃(PO₄)₃ · 4 H₂O of optical quality with dimensions up to 12 × 10 × 8 mm were grown from aqueous solutions of ZnSO₄ and NaH₂PO₄ by controlled diffusion of NH₃ into the solution. The elastic constants c_ij and the thermoelastic constants T_ij = dc_ij/dT, T temperature, were determined from ultrasonic resonance frequencies of thick plates in the range between 5 and 40 MHz and between 250 and 320 K. In respect to the longitudinal elastic stiffness hopeite behaves quasi isotropically, however, the elastic shear stiffness shows a large anisotropy of about a factor 2.5. Above 260 K the shear stiffness c₆₆ possesses a quite anomalous temperature dependence (T₆₆ > 0). Further, the linear thermal expansion reveals a strong anisotropy (α₁₁ = −3.3, α₂₂ = 3.4, α₃₃ = 33 · 10⁻⁶/K).     

Synthesis,characterization, and crystal structure of macrocyclic nickel(II) complexes bearing a,e-cis-1,4-chdc and e,e-trans-1,4-chdc (chdc = cyclohexanedicarboxylate) ligands

ABSTRACT

The Lead Zirconate-titane(PZT) ceramic is known by its piezoelectric characteristic, but also by its stiffness. The use of a composite based on a polyurethane (PU) matrix charged by a piezoelectric material, enable to generate a large deformation of the material, therefore harvesting more energy. This new material will provide a competitive alternative and low cost manufacturing technology of autonomous systems (smart clothes, car seat, boat sail, flag …). A thin film of the PZT/PU composite was prepared using up to 80 vol. % of ceramic. Due to the dielectric nature of the PZT,inclusions of this one in a PU matrix raise the permittivity of the composite. For the most of industrial applications, the composite will not be used at room temperature, and as the energy harvested from this new materials have a direct relation with their permittivity we have made a study about the variation of the permittivity at different temperature and frequencies.     

Dielectric properties of betaine phosphite and deuterated betaine phosphite films

Polycrystalline films of betaine phosphite (BPI) and deuterated BPI have been grown by evaporation on LiNbO₃, α-SiO₂, α-Al₂O₃, and NdGaO₃ substrates. These films consist of large single-crystal blocks in which the polar axis (b) lies in the substrate plane. The results of studying the dielectric properties of the films using interdigital electrodes, X-ray diffraction, and block images in a polarized-light microscope in reflection are reported. The film transition into the ferroelectric state at T = T _c is accompanied by strong anomalies of the capacitance of the film/interdigital structure/substrate structure. The deuteration of BPI films leads to an increase in their temperature T _c: from T _c = 200 K for BPI-based structures to T _c = 280 K for structures with a high degree of deuteration (d ∼ 90%).     

Dielectric properties of fine-grained triglycine sulphate (TGS)

The dielectric permittivity ε′ values of triglycine sulphate (TGS) compressed powders with different grain sizes: (1–300) μm have been measured from 300 to 350 K. It has been shown that ε′_max and transition temperature T_c for the average grain size of about 30 μm behave as predicted by the theory of Wang et al. [J. Phys: Condens. Matter 7 (1995) 7163] for cylindric particle geometry.     

Nuclear Spin-Lattice Relaxation in the Linear Chain Metal,NbSe3

Abstract

The nuclear spin-lattice relaxation time T ₁ of ⁹³Nb in NbSe₃ has been observed as a function of frequency v _N in the range 6-40 MHz at 4.2 K and of temperature T in the range 1.3-77 K at 10 MHz. [T ₁ T]^?1 is found to be proportional to 1/√ν corresponding to characteristic divergence of spin correlation function in 1-D system. Below ~10 MHz, a break down of the divergence is observed. The important features of the T dependence observed are a sharp minimum at ~45 K and an asymptotical approach to the metallic relation, T ₁ T= const, with decreasing T down to helium temperature. This [T ₁ T]^?1 minimum is explained by the destruction of the Fermi surface due to the CDW gap formation. The re-increase of [T ₁ T]^?1 below the CDW transition may suggest a partial recovery of the destructed Fermi surface.     

Isothermal Ageing in the T Range from 0°C to 180°C of a Technical Al-2.0 at.% Zn-1.3 at.% Mg Alloy after Direct Quench

The variations of the structure and the mechanical properties had been investigated by means of TEM investigations and determination of the microhardness number in the T_a range between 0 °C and 180 °C. The main results are the following: – At the starting period of the isothermal ageing an incubation time, t_inc, occurs. t_inc plotted versus T_a yields two intersecting C curves at about 100 °C. – At T_a = 70 °C the only decomposition product are G.P. zones. – At 70 °C <T_a <100 °C the G.P. zones formed in the first period of decomposition can be transformed into η-phase or spherical hexagonal (S.H.) zones. – Above about 110 °C the precipitates present in the matrix are quasi-homogeneously formed at nucleation sites delivered by clusters of impurity atoms.