Enhanced Luminescence of InGaN-Based 395 nm Flip-Chip Near-Ultraviolet Light-Emitting Diodes with Al as N-Electrode

High-reflectivity Al-based n-electrode is used to enhance the luminescence properties of InGaN-based 395 nm flip-chip near-ultraviolet(UV) light-emitting diodes. The Al-only metal layer could form the Ohmic contact on the plasma etched n-GaN by means of chemical pre-treatment, with the lowest specific contact resistance of2.211×10~(-5)Ω·cm~2. The Al n-electrodes enhance light output power of the 395 nm flip-chip near-UV light-emitting diodes by more than 33% compared with the Ti/Al n-electrodes. Meanwhile, the electrical characteristics of these chips with two types of n-electrodes do not show any significant discrepancy. The near-field light distribution measurement of packaged chips confirms that the enhanced luminescence is ascribed to the high reflectivity of the Al electrodes in the UV region. After the accelerated aging test for over 1000 h, the luminous degradation of the packaged chips with Al n-electrodes is less than 3%, which proves the reliability of these chips with the Al-based electrodes. Our approach shows a simplified design and fabrication of high-reflectivity n-electrode for flip-chip near-UV light emitting diodes.     

InGaN基发光二极管和激光二极管

在InGaN发光二极管中,尽管存在着大量的位错,但其效率还是相当高的.用InGaN作为有源层是很重要的.在InGaN基LED的情况下,为产生光发射需要较高的激发功率.横向大面积外延生长的GaN激光二极管(LDs)是在厚的GaN衬底上外延制备成的.在温度250℃、30mW输出的连续工作状态下,其工作电流小于42mA,600℃、30mW输出的连续工作状态下的寿命约为15 000小时.这些结果表明,螺旋位错密度的降低延长了激光二极管的寿命.此外,良好的散热也是很重要的.     

Enhanced Electroluminescent Efficiency Based on Functionalized Europium Complexes in Polymer Light-Emitting Diodes

Efficient red polymer light-emitting diodes are fabricated with the single active layer from the blends of poly（N- vinylcarbazole） （PVK） in the presence of 30 wt. % electron-transporting compound 2-（4-biphenylyl）-5-（ptert- butylphenyl）-1,3,4-oxadiazole （PBD） and europium complexes. The polyphenylene functionalized europium com- plex shows an enhanced electroluminescent efficiency due to the large site-isolation effect. For the polyphenylene functionalized europium complex, the maximum external quantum efficiency of 1.90% and luminous efficiency of 2.01 cd A^-1 are achieved with emission peak at 612nm. The maximum brightness is more than 300cd m^-2.     

Enhanced Efficiency of Polymer Light-Emitting Diodes by Dispersing Dehydrated Nanotube Titanic Acid in the Hole-buffer Layer

Efficiency of polymer light-emitting diodes (PLEDs) with poly(2-methoxy-5-(2-ethyl hexyloxy)-p-phenylene vinylene) (MEH-PPV) as an emitting layer was improved if a dehydrated nanotubed titanic acid (DNTA) doped hole-buffer layer polyethylene dioxythiophene (PEDOT) was used. Photoluminescence (PL) and Raman spectra indicated a stronger interaction between DNTA and sulfur atom in thiophene of PEDOT, which suppresses the chemical interaction between vinylene of MEH-PPV and thiophene of PEDOT. The interaction decreases the defect states in an interface region to result in enhancement in device efficiency, even though the hole transporting ability of PEDOT was decreased.     

Enhanced Photoluminescence of InGaN/GaN Green Light-Emitting Diodes Grown on Patterned Sapphire Substrate

Green InGaN/GaN based light-emitting diodes （LEDs） are fabricated both on planar and wet-etched patterned sapphire substrates by metalorganic vapour phase epitaxy （MOVPE）. Their photoluminescence （PL） properties of the two samples are studied. The results indicate that the PL integral intensity of the green LED on the patterned substrate is nearly two times of that on the planar one within the whole measured temperature range. The enhanced PL intensity in the green LED on the patterned substrate is shown completely contributed from the extraction efficiency, but not from the internal quantum efficiency. The conclusion is supported by temperature-dependent PL analysis on the two samples, and the mechanisms axe discussed.     

Enhancement of Stability of Polymer Light-Emitting Diodes by Post Annealing

We investigate the effect of thermal annealing before and after cathode deposition on the stability of polymer light-emitting diodes （PLEDs） based on green fluorescent polyfluorene derivative. The annealed PLEDs exhibit improved charge transport and red-shift emission compared to the as-fabricated device. The stability of the PLEDs is largely enhanced by post-annealing before and after Ca deposition, which is attributed to the enhanced charge transport and the intimate contact between the cathode and the emissive layer.     

Frontiers in Green Perovskite Light-Emitting Diodes

Perovskite, as a star fluorescent material, has the characteristics of adjustable luminescence peak, high color purity, high photoluminescence quantum yield, and low cost, showing significant potential in the photoelectric field. Among the RGB colors for display devices, green is the most sensitive color for human eyes, and green perovskite light-emitting diodes (GPeLEDs) have aroused much interest in recent years. In this work, the research history of GPeLEDs is reviewed, the perovskites of different dimensions are introduced, and the common synthesis methods of perovskites are discussed. Besides, the strategies to improve the stability and luminous efficiency of GPeLEDs are summarized, including component engineering, phase engineering, ligand engineering, additive engineering, interface engineering, and optical coupling structure strategy. Finally, the development state of GPeLEDs is summarized and prospected. This work is expected to stimulate more unprecedented achievements derived from GPeLEDs, thus promoting their practical applications in future ultra-high-definition displays.     

n-ZnO/i-MgO/p-GaN异质结发光二极管

用等离子体辅助分子束外延的方法生长了n-ZnO/i-MgO/p-GaN异质结发光二极管。I-V测量表明其具有典型的二极管整流特性。电致发光峰位于382nm,通过与n型ZnO和p型GaN的光致发光谱比较,其发光峰位与线形都与ZnO的自由激子发射一致,表明该电致发光来自于ZnO的自由激子发射。通过Anderson模型比较了n-ZnO/i-MgO/p-GaN和n-ZnO/p-GaN异质结的能带示意图,证明了由于MgO层的插入抑制了ZnO向GaN层中的电子注入,且有利于空穴向ZnO层注入,从而实现了ZnO层中的电注入发光。     

植物照明用荧光粉转换白光二极管的研究

L ED具有效率高、体积小、功耗低、寿命长等优点,并且因其具有可轻易实现宽幅光谱调控的特性,在植物照明领域崭露头角.植物照明用L ED分为两大类,一类是单色光L ED,另一类是白光L ED,其中植物照明用白光L ED可与单色L ED混合或者单独使用从而实现植物补光照明.植物封装用白光L ED大部分采用蓝光L ED芯片或...     

Flip-Chip GaN-Based Light-Emitting Diodes with Mesh-Contact Electrodes

GaN-based light-emitting diodes （LEDs） with mesh-contact electrodes have been developed. The p-type ohmic contact layer is composed of oxidized Ni/Au mesh and NiO overlay （20A）. An Ag （3000A） omni-directional reflector covers the p-type contact. The n-type contact is a Ti/AI planar film with a 10-μm-width Ti/AI stripe. The Ti/AI stripe surrounds the centre of LED mesa. With a 20-mA current injection, the light output power of GaN-based LEDs with mesh-contact electrodes is 23% higher than that of the conventional LEDs.     

8-羟基喹啉锂的蓝色有机发光二极管

8羟基喹啉金属螯合物是目前研究较多的有机小分子发光材料,其中,8羟基喹啉铝(Alq3)是这类材料中最重要的一种,具有良好热稳定性和成膜性,电子迁移率为10-5cm2Vs,是有机电致发光(EL)器件中最常用的电子传输发光材料。可是其发光峰在524nm,只作为绿色和红色发光器件的基质材...     

胶体量子点电致发光器件的研究进展

胶体量子点因其性质稳定、可溶液加工、发光颜色易于调节、色彩饱和度高等优点在固体照明、平板显示、红外通讯等领域引起人们高度关注.本文详细介绍了最近胶体量子点电致发光领域取得的重要进展,包括基于 II-VI 族(CdSe、CdTe、PbS、PbSe),III-V 族(InAs、InP),和 I-III-VI 族(CuInS、CuInSe)的量子点电致发光二极管.     

有机光发射二极管发光效率的提高

输入到常用的白炽灯的电能 ,只有很少的一部分可用来发光 ,余者均以热的行式弥散掉了 .一般的光发射二极管 (ＬＥＤ)也面临着类似的能量转换效率低的问题 .那些对白光照明不适用的常规有机光发射二极管 ,只有 10 %的输入电能可以转换成光 .传统的看法认为 ,这种能量转换效率或许最高只能提高到 2 5 % .但是 ,犹太大学的科学家们认为 ,这个能量转换效率的极限并不适用于所有可能的光发射二极管材料 .他们的试验结果表明 ,有些可以发射白光的场致发光聚合物和齐聚物可将 4 1%— 6 3%的输入电能转换成光 .这些发现 ,推动了那些适用于激光、显示…     

一种新型共轭聚合物发光二极管老化的拉曼光谱研究

通过显微共焦拉曼光谱 ,对一种以新型的共轭聚合物半导体材料 3,4 (2 乙基己氧基 )苯基 1,3 丙二醇酯 (poly(2 (4 Ethylhexyl) phenyl 1,4 phenylenevinylene) (P PPV) )为发光层的聚合物发光二极管(PLEDs)器件进行了老化研究 ,无论是光致发光光谱还是拉曼光谱都提供证据说明造成器件老化的原因主要是发光层的聚合物的主链结构 ,即聚合物的共轭结构被破坏 ,这对提高以P PPV作为发光层的PLEDs器件的性能提出有用信息。     

理想波导短程透镜的研究

报道无曲率奇点，无像差光波导短程透镜的研究。在透镜面型设计上，应用前文提出的过渡区母线函数形式，有效地消除了透镜卷边两端的曲率奇点，具体设计和研制了理想光波导短程透镜。     

Analysis of Intrinsic Degradation Mechanism in Organic Light-Emitting Diodes by Impedance Spectroscopy

The organic light-emitting diodes （OLEDs） in the sandwiched structures ITO/poly[3,4-ethylenedioxythiopene] （PEDOT） /poly[9,9-dioctylfluorene-co-4, 7-di-2-thienyl-2,1,3-benzothiadiazole] （PFO-DBT15） /Ba/A1 are fabricated We use impedance measurements to investigate the degradation of aged OLEDs. A detailed analysis of the impedance spectra as functions of frequency and dc bias yields information about the injection of the interracial electrode and the transport properties of emissive layer changes. Morphology differences between degraded and undegraded devices can also be observed by a scanning electron microscope. We perform comparative studies of the impedance spectroscopy （IS） of undegraded and degraded devices by both experiment and simulation approaches to explain the degradation mechanism for OLEDs. The IS of the undegraded device can be well understood by simply adopting the conventional RC equivalent circuits. For the degraded device, however, the successful model of the impedance spectroscopy results needs to take into account the more complicated situ- ations, and we adopt a constant phase element to meet the experimental and simulated data and discuss the reasons caused by the problem.     

Multilayer Light-Emitting Diodes Based on Organic Semiconductor Polymers

Russian Physics Journal - Results of studying the optical and electrical characteristics of single- and two-layer polymer OLED structures with different thicknesses of radiating layers are...