共查询到19条相似文献,搜索用时 140 毫秒
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应用50%HCl作为浸蚀剂,对助熔法生长的PbFe_(12)O_(19)单晶体的(0001)解理面进行了浸蚀,以显示位错蚀斑。根据蚀斑所具有的形态,将其进行了分类,并确定了各自对应的位错类型。应用Mathews等人提出的机制,解释了在(0001)基面上所观察到的位错蚀斑阵列。 相似文献
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应用50%HCl作为浸蚀剂,对助熔法生长的PbFe12O19单晶体的(0001)解理面进行了浸蚀,以显示位错蚀斑。根据蚀斑所具有的形态,将其进行了分类,并确定了各自对应的位错类型。应用Mathews等人提出的机制,解释了在(0001)基面上所观察到的位错蚀斑阵列。
关键词: 相似文献
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An etchant has been found for the selective etching of gallium antimonide, and a study has been made of the anisotropy of the dissolution along the main crystallographic directions. The dissolution rates of the gallium antimonide faces obey $$v_{\left( {111} \right)B} > v_{\left( {1 \cdot 0} \right)} > v_{\left( {110} \right)} > v_{\left( {111} \right)A} .$$ An optical method has been developed for orienting gallium antimonide crystals on the basis of the main crystallographic planes. Reflection patterns from GaSb differ from those from gallium arsenide, germanium, and silicon. 相似文献
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用腐蚀法和X射线形貌术研究了α-SiC晶体中的位错。所用的腐蚀剂为熔融氢氧化钾。证实了尖底蚀坑与位错的一一对应关系。由于[0001]方向的螺型位错的Burgers矢量比刃型位错的Burgers矢量大得多,故可从蚀坑的深浅来判别螺型位错和刃型位错。给出了蚀坑形状和多型体晶体结构的对应关系。研究了表面生长蜷线的形态与SiC晶体中的位错及位错运动的关系。X射线形貌图显示了α-SiC晶体中相当数量的位错处于基面C面上。生长位错从晶体“根部”成核并随着晶体生长前沿的向前推进而延伸,因而位错线的方向常常沿[101O]和[1120]方向。将腐蚀法和X射线形貌术结合起来才能全面显示α-SiC晶体中的位错。
关键词: 相似文献
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Abstract In this paper the effective non-destructive method of hydrothermal etching of crystals is considered to carry out estimation of density and place of dislocations in large scaled crystals of synthetic quartz. In this process of etching there are specific etch figures which appear as faceted holes of a millimetre up to several millimetres in size on all quartz facets. The size of holes depends on concentration of solution, duration of the process of etching and degree of solution saturation by silicon dioxide. The configuration of the holes on the facets of different indexes is various. Pits of symmetry, having facets, correspond to each facet there. Zcrystals are basic in quartz production. In sectional operation the expedients of defection of dislocations in pits generated on a facet are considered (0001). 相似文献
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Subsurface flaws, which determine the fracture strength of crystals, can be removed by the aid of chemical etching. Above a temperature of 200°C orthophosphoric acid H3PO4 is an efficient etchant for yttrium aluminium garnets. However, at these temperatures the etchant decomposes into its related phosphoric acids which show negligible etching rates for garnets. It takes a long time to warm up a large volume of acid and the etchant is decomposed for the most part already before the optimum temperature is reached. We show that efficient etching is achieved when the samples are in the bath already during the warm-up phase and specify the parameters for the optimum etch process. 相似文献
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Two defect-selective etching approaches used for revealing and analysis of defects in wide-band-gap semiconductors (GaN, SiC) are described in detail: (i) orthodox etching in molten salts (KOH, NaOH) and hot acids (H2SO4,H3PO4) and (ii) electroless photo-etching (photoelectrochemical or PEC) in aqueous solutions of KOH. Characteristic features of these two techniques, their reliability and limitation in revealing different types of defects (dislocations, stacking faults, micro-defects and electrically active chemical non-homogeneities) will be discussed. Examples of the use of both etching approaches to reveal defects in bulk and epitaxial layers of different crystallographic orientation are given. Numerous references to previous work on calibration of the etch features by means of TEM, X-ray diffraction, Raman and PL methods are cited. 相似文献
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用腐蚀法研究了β-SiC外延层中的晶体缺陷。腐蚀剂为熔融氢氧化钾。三角形尖底蚀坑对应于位错。在β-SiC中的全位错为立方晶系的73°位错和60°位错。不同堆垛方式的β-siC生长层相遇时将形成{111}交界层错,其腐蚀图象为平行于<110>方向的直线。60°位错可分解为两个1/6<112>SchockLey不全位错,并夹着一片{111}层错构成扩展位错。三个1/6<110>压杆位错与三片{111}层错可构成层错锥体。正、反堆垛的β-SiC可形成尖晶石律双晶,双晶面为(111)。腐蚀法和X射线劳厄法证实了这种双晶的存在。
关键词: 相似文献
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This paper presents a novel anti-shock bulk silicon
etching apparatus for solving a universal problem which occurs when
releasing the diaphragm (e.g.\ SiNx), that the diaphragm tends to be
probably cracked by the impact of heating-induced bubbles, the swirling of heating-induced
etchant, dithering of the hand and imbalanced etchant
pressure during the wafer being taken out. Through finite element
methods, the causes of the diaphragm cracking are analysed.
The impact of heating-induced bubbles could be the main factor which
results in the failure stress of the SiNx diaphragm and the rupture of
it. In order to reduce the four potential effects on the cracking of the released
diaphragm, an anti-shock bulk silicon etching apparatus is
proposed for using during the last etching process of the diaphragm
release. That is, the silicon wafer is first put into the regular
constant temperature etching apparatus or ultrasonic plus, and when
the residual bulk silicon to be etched reaches near the
interface of the silicon and SiNx diaphragm, within a distance of
50--80~\mu m (the exact value is determined by the thickness,
surface area and intensity of the released diaphragm), the wafer is
taken out carefully and put into the said anti-shock silicon etching
apparatus. The wafer's position is at the geometrical centre, also
the centre of gravity of the etching vessel. An etchant outlet is
built at the bottom. The wafer is etched continuously, and
at the same time the etchant flows out of the vessel. Optionally, two
symmetrically placed low-power heating resistors are put in the
anti-shock silicon etching apparatus to quicken the etching process.
The heating resistors' power should be low enough to avoid the
swirling of the heating-induced etchant and the impact of the heating-induced bubbles
on the released diaphragm. According to the experimental
results, the released SiNx diaphragm thus treated is unbroken, which
proves the practicality of the said anti-shock bulk silicon etching
apparatus. 相似文献
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Etch patterns produced on habit rhombohedral faces and rhombohedral cleavages of amethyst crystals are described and illustrated. Fidelity of etchants used is assessed. Also described are paired pits produced on match cleavages etched with the same or different etchants. By prolonged etching experiments it is established that the dislocations penetrate into the body of the crystal. Spatial distribution of dislocation in the body of the crystal is worked out. Uniformly spaced etch pits in an array observed on match cleavages (etched with different etchants) are attributed to low-angle tilt boundaries. 相似文献
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S. Kadečková 《Czechoslovak Journal of Physics》1969,19(9):1178-1179
The etching of fresh and grown-in dislocations on the chemically polished (100) surface of Fe-3% Si alloy single crystals and fresh dislocations on the same surface of Fe-7% Si alloy single crystals in a 1–2% nital is described. Antiphase domain boundaries are revealed by the same etching on the surfaces of Fe-7% Si alloy single crystals with different crystallographic orientation. 相似文献