Structural and electrical properties of KCa<Subscript>2</Subscript>Nb<Subscript>5</Subscript>O<Subscript>15</Subscript> ceramics

A polycrystalline sample of KCa₂Nb₅O₁₅ with tungsten bronze structure was prepared by a mixed oxide method at high temperature. A preliminary structural analysis of the compound showed an orthorhombic crystal structure at room temperature. Surface morphology of the compound shows a uniform grain distribution throughout the surface of the sample. Studies of temperature variation on dielectric response at various frequencies show that the compound has a transition temperature well above the room temperature (i.e., 105°C), which was confirmed by the polarization measurement. Electrical properties of the material have been studied using a complex impedance spectroscopy (CIS) technique in a wide temperature (31–500°C) and frequency (10²–10⁶ Hz) range that showed only bulk contribution and non-Debye type relaxation processes in the material. The activation energy of the compound (calculated from both the loss and modulus spectrum) is same, and hence the relaxation process may be attributed to the same type of charge carriers. A possible ‘hopping’ mechanism for electrical transport processes in the system is evident from the modulus analysis. A plot of dc conductivity (bulk) with temperature variation demonstrates that the compound exhibits Arrhenius type of electrical conductivity.      

Long-time relaxation phenomena in Pb<Subscript>0.94</Subscript>Ba<Subscript>0.06</Subscript>Sc<Subscript>0.5</Subscript>Nb<Subscript>0.5</Subscript>O<Subscript>3</Subscript> (PBSN-6) single crystals

Long-time polarization relaxation in the temperature range where PBSN-6 single crystals reside in the relaxor state was studied. An analysis of the time dependence of the permittivity ε′(t) performed at measuring frequencies from 1 Hz to 1 kHz in weak electric fields E₀ showed that the relaxation (or freezing) times derived by extrapolating relations of the type ε′(t) ～ log(t/t₀) and ε′(t) ～ exp{?[ln(t/t₀)]_β} range from 10⁸ to 10¹¹ min and depend substantially on the bias voltage applied to the sample. A study of the pattern of the dielectric response in moderate and strong infralow-frequency fields revealed that, after a sample was maintained under a bias lower than the coercive force, it no longer exhibited the additional anomalies in the amplitude dependences of the effective loss tangent tan_eff(E₀) than were observed in a thermally recuperated sample.     

Structural and electrical properties of 0.7Pb(Mg<Subscript>1/3</Subscript>Nb<Subscript>2/3</Subscript>)O<Subscript>3</Subscript>–0.3PbTiO<Subscript>3</Subscript> thin films grown on Ir/MgO buffered Si(100) substrates

Thin films of 0.7Pb(Mg_1/3Nb_2/3)O₃–0.3PbTiO₃ (PMN-PT) have been grown on Ir/MgO buffered Si(100) substrates at different substrate temperatures by pulsed laser deposition. Crystalline phases as well as preferred orientations in the PMN-PT films were investigated by X-ray diffraction analysis (XRD). The microstructure, dielectric and ferroelectric properties of PMN-PT film prepared at 650 °C were studied. The results show that the film prepared at 650 °C exhibits pure perovskite phase and single c-axis orientation. The dielectric constant and dissipation factor of the single c-axis oriented film are 1000 and 0.04 at a frequency of 1 kHz, while the remnant polarization and coercive field are about 13.0 μC/cm² and 100 kV/cm under an electric field of 480 kV/cm, respectively. PACS 81.15.Fg; 77.80.-e; 77. 22.Ej; 77.55.+f; 85.50.Gk     

Ferroelectric and dielectric properties of SrBi<Subscript>4</Subscript>Ti<Subscript>4</Subscript>O<Subscript>15</Subscript> thin films grown on Bi<Subscript>4</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> film layer

Ferroelectric and dielectric properties of bilayered ferroelectric thin films, SrBi₄Ti₄O₁₅ grown on Bi₄Ti₃O₁₂, were investigated. The thin films were annealed at 700°C under oxygen atmosphere. The bilayered thin films were prepared on a Pt(111)/Ti/SiO₂/Si substrate by a chemical solution deposition method. The dielectric constant and dielectric loss of the bilayered thin films were 645 and 0.09, respectively, at 100 kHz. The value of remnant polarization (2P _r) measured from the ferroelectric thin film capacitors was 60.5 μC/cm² at electric field of 200 kV/cm. The remnant polarization was reduced by 22% of the initial value after 10¹⁰ switching cycles. The results showed that the ferroelectric and dielectric properties of the SrBi₄Ti₄O₁₅ on Bi₄Ti₃O₁₂ ferroelectric thin films were better than those of the SrBi₄Ti₄O₁₅ grown on a Pt-coated Si substrate suggesting that the improved properties may be due to the different nucleation and growth kinetics of SrBi₄Ti₄O₁₅ on the c-axis-oriented Bi₄Ti₃O₁₂ layer or on the Pt-coated Si substrate.     

Effect of a magnetic field on the permittivity of 80%La<Subscript>0.7</Subscript>Sr<Subscript>0.3</Subscript>MnO<Subscript>3</Subscript>/20%GeO<Subscript>2</Subscript> composite

The dielectric properties of a magnetoresistive conducting two-phase 80%La_0.7Sr_0.3MnO₃/20%GeO₂ (wt %) composite have been studied near the percolation threshold in magnetic fields from 0 to 15 kOe at frequencies of the measurement field from 5 kHz to 1 MHz. The samples have inductive impedances; i.e., their permittivities can be considered negative due to a high conductivity in this frequency range. The permittivity increases in magnitude in magnetic field, and the values of the magnetodielectric coefficient reach 23% at room temperature. The reasons for the effect of magnetic field on the dielectric permittivity of samples are discussed.     

Electrical properties of Sr<Subscript>3</Subscript>Bi<Subscript>4</Subscript>Ti<Subscript>6</Subscript>O<Subscript>21</Subscript> thin films

Highly c-axis-oriented Sr₃Bi₄Ti₆O₂₁ (SBTi) thin films were fabricated on Pt-coated Si substrates by pulsed laser deposition (PLD). The structures were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM). No peaks of SrTiO₃ (STO) could be detected in the XRD pattern, indicating the existence of the SBTi single phase. Good ferroelectric hysteresis loops of the films with Pt electrodes were obtained. With an applied field of 400 kV/cm, the measured remanent polarization (P_r) and coercive field (E_c) values were 4.1 C/cm² and 75 kV/cm respectively. The films showed little fatigue after 2.22×10⁹ switching cycles: the nonvolatile polarizations decreased by less than 5% of the initial values. The dielectric constant and the loss tangent of the films were measured to be 363 and 0.04 at 100 kHz. These results might be advantageous for nonvolatile ferroelectric random access memory (NVFRAM) and dynamic random access memory (DRAM). PACS 77.84.Dy; 77.22.-d; 68.55.Jk     

Electrical properties,equivalent circuit,and dielectric relaxation studies on [(C<Subscript>3</Subscript>H<Subscript>7</Subscript>)<Subscript>4</Subscript>N]<Subscript>2</Subscript>Cd<Subscript>2</Subscript>Cl<Subscript>6</Subscript> polycrystalline

The Ac electrical conductivity and the dielectric relaxation properties of the [(C₃H₇)₄N]₂Cd₂Cl₆ polycrystalline sample have been investigated by means of impedance spectroscopy measurements over a wide range of frequencies and temperatures, 209 Hz–5 MHz and 361–418 K, respectively. The purpose is to make a difference between the electrical and dielectric properties of the polycrystalline sample and single crystal. Besides, a detailed analysis of the impedance spectrum suggests that the electrical properties of the material are strongly temperature-dependent. Plots of (Z" versus Z') are well fitted to an equivalent circuit model consisting of a series combination of grains and grains boundary elements. Moreover, the temperature dependence of the electrical conductivity in the different phases follows the Arrhenius law and the frequency dependence of σ (ω) follows the Jonscher’s universal dynamic law. Furthermore, the modulus plots can be characterized by full width at half height or in terms of a nonexperiential decay function φ(t) = exp(t/t)^β. Finally, the imaginary part of the permittivity constant is analyzed with the Cole–Cole formalism.     

Magnetic properties of a quasi-one-dimensional NaFeGe<Subscript>2</Subscript>O<Subscript>6</Subscript> polycrystal

The magnetic properties of a synthesized dielectric NaFeGe₂O₆. polycrystal have been studied. The antiferromagnetic ordering of this compound below 15 K has been established. The Mössbauer spectrum at 300 K is a quadrupole doublet; it is characterized by an isomeric shift typical of the high-spin Fe³⁺ ion in the octahedral coordination and quadrupole splitting, which indicates distortion of the oxygen octahedron around the iron cation. Quasi-one-dimensionality of the sample magnetic structure is proved.     

Low-frequency relaxation processes in Pb<Subscript>5</Subscript>Ge<Subscript>3</Subscript>O<Subscript>11</Subscript> ferroelectric crystals

Measurements and analysis of the temperature and frequency dependences of permittivity and losses and of the electrical resistivity of Pb₅Ge₃O₁₁ ferroelectric crystals at temperatures of 100 to 600 K and frequencies of 0.1 to 100 kHz are reported. The dielectric characteristics of the crystals exhibit, in addition to clearly pronounced anomalies near the Curie point T_C=450 K, less distinct anomalous features of the relaxation character in the range 230–260 K. The data obtained on the effect of various factors (degree of crystal polarization, crystal annealing at different temperatures and in different environments, etc.) on the low-temperature anomalies serve as a basis for discussing the possible mechanisms responsible for these anomalies. It is concluded that the low-temperature dielectric anomalies originate from thermal carrier localization in defect levels in the band gap, which entail the formation of local polarized states.     

Preparation and electrical properties of Bi<Subscript>3.25</Subscript>Pr<Subscript>0.75</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> ferroelectric thin films

Bi_3.25Pr_0.75Ti₃O₁₂ (BPT) ferroelectric thin films have been prepared by chemical solution deposition on platinized Si substrates. Well-crystallized BPT films can be achieved by 600 °C rapid thermal annealing. The film surface is smooth and crack-free, composed of uniform spherical grains around 90–100 nm in diameter. The electrical properties of Pt/BPT/Pt thin film capacitors were characterized by hysteresis and impedance measurements. The remanent polarization of 700 °C annealed BPT films is around 20 C/cm² at 120-kV/cm stimulus field. The dielectric constant is around 380 at 10 kHz, 100-mV amplitude. The remanent polarization of BPT film showed a slight reduction, 10% of its original value, after 2.8×10⁹ cycles, while a 30% reduction of non-volatile polarization was observed. PACS 81.15.-z; 77.55.+f; 77.22.Gm     

Magnetic and dielectric properties of Mn<Subscript>0.2</Subscript>Ni<Subscript>0.8</Subscript>Fe<Subscript>2</Subscript>O<Subscript>4</Subscript> nanoparticles synthesized by PEG-assisted hydrothermal method

We present a systematic investigation on the structural and magnetic properties of Mn_0.2Ni_0.8Fe₂O₄ nanoparticles synthesized by a polyethylene glycol (PEG)-assisted hydrothermal route. XRD, FT-IR, TEM and VSM were used for the structural, morphological, dielectric properties and magnetic investigation of the products, respectively. Average crystallite size of product was estimated using Line profile fitting as 6 ± 1 nm and particle size as 6.5 ± 1.0 nm from TEM micrographs. Magnetization measurements have shown that the particles have a blocking temperature of 134 K. Magnetization and the coercive field of the sample increase by decreasing the temperature. The conductivity measurements reveal the semiconducting behaviour for the sample. Temperature-dependent dielectric properties: dielectric permittivity (ε) and ac conductivity (σ_ac) for the sample were studied as a function of applied frequency in the range from 1 Hz to 3 MHz. These studies indicated that the dielectric dispersion curve for the sample showed usual dielectric dispersion which can be explained on the basis of Koop’s theory, which is based on the Maxwell–Wagner model for the interfacial polarization of homogeneous double structure.     

Dielectric dispersion and magnetic properties of Ba-modified Pb(Fe<Subscript>1/2</Subscript>Nb<Subscript>1/2</Subscript>)O<Subscript>3</Subscript>

The polycrystalline samples of Ba-modified Pb(Fe_1/2Nb_1/2)O₃ (i.e., (Pb_1-xBa_x)(Fe_1/2Nb_1/2)O₃ PBFN, with x=0,0.05,0.07) were synthesized by a mechanosynthesis (i.e., high-energy ball milling) route followed by a mixed oxide method. Structural analysis provides the information on formation of single-phase orthorhombic structure on substitution of a small amount (x=0.07) of Ba at the Pb-site of Pb(Fe_0.50Nb_0.50)O₃ (PFN). The ferroelectric–paraelectric phase transition in PFN was observed at 383 K, which decreases on increasing Ba-concentration in PBFN. Detailed studies of dielectric properties of PBFW show the following: (i) diffuse phase transition, (ii) low loss tangent, (iii) low activation energy, and (iv) low frequency dielectric dispersion. An anomaly in the ac conductivity was found very close to phase transition temperature. The activation energy is found to decrease from 0.19 to 0.01 eV on increasing Ba-concentration to 7% (x=0.07). Temperature field-dependent magnetization measurements of all the samples showed antiferromagnetic transition at ∼15 K (for x=0.07). PBFN sample showed a slight increase in the coercivity (i.e., from 400 Oe (PFN) to 500 Oe (PBFN, for x=0.07) at 2 K. PACS 61.10.Nz; 68.37.Hk; 75.50.Ss; 75.60.Ej; 77.22.Ch; 77.22.Gm     

Dielectric and acoustic properties of the new lead-free BiLi<Subscript>0.6</Subscript>W<Subscript>0.4</Subscript>O<Subscript>3</Subscript> ceramic

The properties of the new lead-free compound BiLi_0.6W_0.4O₃, obtained using ceramic technology, were studied by dielectric and mechanical spectroscopy. The anomalies of internal friction are, along with the elastic and dielectric properties observed experimentally at a temperature of 350°C, related to its structural phase transition. Dielectric and mechanical relaxation due to processes of interaction between crystal lattice defects was revealed in the low-temperature phase.     

Dielectric relaxation in BiLi<Subscript>0.6</Subscript>W<Subscript>0.4</Subscript>O<Subscript>3</Subscript> ceramics

The low-frequency process of dielectric relaxation in the new lead-free compound BiLi_0.6W_0.4O₃ prepared by conventional ceramic technology is studied. The features of dielectric relaxation are discussed in terms of a model of interaction between the domain boundaries and point defects of a crystalline lattice.     

Magnetic and electric properties of Eu<Subscript>0.62</Subscript>Bi<Subscript>0.38</Subscript>MnO<Subscript>3</Subscript> and Eu<Subscript>0.53</Subscript>Bi<Subscript>0.32</Subscript>Sr<Subscript>0.15</Subscript>MnO<Subscript>3</Subscript> crystals

Single crystals of Eu_0.62Bi_0.38MnO₃ and Eu_0.53Bi_0.32Sr_0.15MnO₃ solid solutions crystallizing in an orthorhombically distorted perovskite structure were prepared. At temperatures above 120 K, Eu_0.62Bi_0.38MnO₃ exhibits the properties of structural glass while remaining a dielectric at all temperatures. There is no long-range magnetic order in this compound. Eu_0.53Bi_0.32Sr_0.15MnO₃ behaves as a semiconductor above 120 K and exhibits a jump in conductivity at T = 175 K associated with a metal-insulator transition occurring within limited regions of the crystal. In these regions, there appears a ferromagnetic moment (due to double exchange mediated by charge carriers) and local electric polarization.     

Magnetodielectric coupling by exchange striction in Y<Subscript>2</Subscript>Cu<Subscript>2</Subscript>O<Subscript>5</Subscript>

We have studied the magnetodielectric response of Y₂Cu₂O₅, the so-called blue phase in the Y₂O₃-CuO-BaO phase diagram. Based on symmetry principles, we predict and demonstrate magneto-dielectric coupling on a single crystal sample. We report an anomaly in the dielectric constant at the ordering temperature of the Cu spins. We probe the magnetic field-induced phase transitions between four different magnetic phases using magneto-capacitance measurements, demonstrating relatively strong magnetodielectric coupling. We observe an increase in dielectric constant in the spin-flip phase where there exists spontaneous magnetization. We construct a detailed magnetic phase diagram. The magnetodielectric coupling is analyzed in terms of striction induced by symmetric superexchange and optical phonon frequency shifts.     

Ionic conduction mechanism and relaxation studies of NaNbAlP<Subscript>3</Subscript>O<Subscript>12</Subscript> compound

The Na superionic conductor (NASICON) NaNbAlP₃O₁₂ compound was prepared by the conventional solid-state reaction method. The formation of single-phase material was confirmed by X-ray diffraction studies, and it was found to be a hexagonal phase at room temperature. The electrical conductivity was measured in the frequency range from 200 Hz to 5 MHz and temperatures between 573 and 773 K using impedance spectroscopy technique. The obtained results were analyzed by fitting the experimental data to the equivalent circuit model. The analysis of Nyquist plots has revealed the contribution of three electrically active regions corresponding to the bulk mechanism, distribution of grain boundaries, and electrode processes. Besides, the frequency dependence of the conductivity is interpreted in terms of Jonscher’s law. Temperature dependence of the power law exponent s strongly suggests that the non-overlapping small polaron tunneling (NSPT) model is the dominant transport process. The variation of the imaginary part of the complex modulus as a function of angular frequency at several temperatures shows a double relaxation peak suggesting the presence of grains and grain boundaries in the sample. An analysis of the dielectric constants ε″ and loss tangent tan (δ) with frequency shows a distribution of relaxation times.     

Dielectric and phase transition of BaTi<Subscript>0.6</Subscript>Zr<Subscript>0.4</Subscript>O<Subscript>3</Subscript> ceramics prepared by a soft chemical route

BaTi_0.6Zr_0.4O₃ (BTZ) ceramic was synthesized by a soft chemical route. X-ray diffraction at room temperature shows that the sample has cubic perovskite structure with space group Pm-3m. Temperature dependent dielectric study of the sample has been investigated in the frequency range from 50 Hz to 1 MHz. The density of the sample was determined using Archimedes’ principle and found to be ∼ 97% of the X-ray density. The average grain size in the pallet was found to be ∼ 1 μm. The dielectric constant peaks at temperature T_m which is dependent on the frequency. The dielectric relaxation rate follows the Vogel–Fulcher relation with activation energy = 0.0185 eV, and freezing temperature = 186 K. All these measurements confirm that BTZ is a relaxor ferroelectric. PACS 77.22.Jp; 77.84.-s; 77.80.Bh; 77.22.Gm     

Effect of porosity and pore morphology on the low-frequency dielectric response in sintered ZrO<Subscript>2</Subscript>—8 mol% Y<Subscript>2</Subscript>O<Subscript>3</Subscript> ceramic compact

Effect of porosity and pore size distribution on the low-frequency dielectric response, in the range 0.01–100 kHz, in sintered ZrO₂—8 mol% Y₂O₃ ceramic compacts have been investigated. Small-angle neutron scattering (SANS) technique has been employed to obtain the pore characteristics like pore size distribution, specific surface area etc. It has been observed that the real and the imaginary parts of the complex dielectric permittivity, for the specimens, depend not only on the porosity but also on the pore size distribution and pore morphology significantly. Unlike normal Debye relaxation process, where the loss tangent vis-à-vis the imaginary part of the dielectric constant shows a pronounced peak, in the present case the same increases at lower frequency region and an anomalous non-Debye type relaxation process manifests.     

Synthesis,crystal structure,Hirshfeld surface analysis,and vibrational and DFT investigation of [C<Subscript>6</Subscript>H<Subscript>10</Subscript>(NH<Subscript>3</Subscript>)<Subscript>2</Subscript>]<Subscript>3</Subscript>CuBr<Subscript>4</Subscript>.3Br

Single crystal of a new organic–inorganic hybrid material [C₆H₁₀(NH₃)₂]₃CuBr₄.3Br was synthesized by the slow evaporation method at room temperature and characterized by X-ray diffraction, FTIR, Raman spectroscopy, UV–Vis, dielectric measurements, and Hirschfield surface analysis. The title compound crystallizes in trigonal system \( P\overline{3} \).The crystal packing is governed by the N-H…Br and non-classical C-H…Br hydrogen-bonding interactions between the 1, 2-diamoniumcyclohexane cations, the tetrahedral [CuBr₄]^3? anions, and the isolated ion Br^?. Theoretical calculations were performed using density functional theory (DFT) for studying the molecular structure, vibrational spectra, and optical properties of the investigated molecule in the ground state. The optimized geometrical parameters obtained by DFT calculations are in good agreement with single crystal XRD data. The optical properties were investigated by optical absorption and show two bands at 260 and 305 nm.