Ferroelectric phase transition of Nb-doped Bi<Subscript>3.25</Subscript>La<Subscript>0.75</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> ceramics

Bi_3.25La_0.75Ti_3-yNb_yO₁₂ (y=0.0, 0.03, 0.09, 0.15, 0.21) were synthesized using the solid-state reaction method. The effects of Nb doping on ferroelectric properties were studied through dielectric and P-E measurements. The value of P_r increases with increasing Nb content. Bi_3.25La_0.75Ti_3-yNb_yO₁₂ ceramics exhibit a maximum remanent polarization of P_r=27 μC/cm² at an Nb content of y=0.09. These results indicate that Nb doping can improve the ferroelectric properties of BLT ceramics. The Curie temperature, T_c, decreased with increasing Nb-content, and the ferroelectric phase transition of BLTNy is a second-order transition without thermal hysteresis. PACS 77.55.+f; 77.80.-e; 77.22.Jp     

Resistive switching in β-SrV<Subscript>6</Subscript>O<Subscript>15</Subscript>

We investigate the pressure and temperature behavior of current-dependent resistivity of β-SrV₆O₁₅. We observe a switching between states of different resistivities in the insulating state of β-SrV₆O₁₅. In the low pressure phase, the resistive switching appears at temperatures below the semiconductor-insulator transition. In the high pressure phase, under ~1.6 GPa, the switching appears in the temperature range of the phase transition. The existence of switching may imply an important role of strontium off-stoichiometry for the electrical transport in β-SrV₆O₁₅. No electric-field-induced enhancement of the conductivity is observed. However, the conduction is significantly nonlinear under ~1.6 GPa, indicating that the charge order pattern in the high pressure phase is considerably different from that of the low pressure phase.     

Impedance analysis of Bi<Subscript>3.25</Subscript>La<Subscript>0.75</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> ferroelectric ceramic

AC impedance spectroscopy technique has been used to study electrical properties of Bi_3.25La_0.75Ti₃O₁₂ (BLT) ceramic. Complex impedance plots were fitted with three depressed semicircles, which are attributed to crystalline layer, plate boundary and grain boundary and all three were found to comprise of universal capacitance nature [C = C0w ⁿ⁻¹]. Grain boundary resistance and capacitance evaluated from complex impedance plots have larger values than that of plate boundary and crystalline layer. The activation energies (E _a) for DC-conductance in grain boundary, plate boundary and crystalline layer are 0.68 eV, 0.89 eV and 0.89 eV, respectively. Relaxation activation energies calculated from impedance plots showed similar values, 0.81 eV and 0.80 eV for crystalline layer and plate boundary, respectively. These activation energy values are found to be consistent with the E _a value of oxygen vacancies in perovskite materials. A mechanism is offered to explain the generation of oxygen vacancies in BLT ceramic and its role in temperature dependence of DC-conductance study.      

Structural and electrical properties of KCa<Subscript>2</Subscript>Nb<Subscript>5</Subscript>O<Subscript>15</Subscript> ceramics

A polycrystalline sample of KCa₂Nb₅O₁₅ with tungsten bronze structure was prepared by a mixed oxide method at high temperature. A preliminary structural analysis of the compound showed an orthorhombic crystal structure at room temperature. Surface morphology of the compound shows a uniform grain distribution throughout the surface of the sample. Studies of temperature variation on dielectric response at various frequencies show that the compound has a transition temperature well above the room temperature (i.e., 105°C), which was confirmed by the polarization measurement. Electrical properties of the material have been studied using a complex impedance spectroscopy (CIS) technique in a wide temperature (31–500°C) and frequency (10²–10⁶ Hz) range that showed only bulk contribution and non-Debye type relaxation processes in the material. The activation energy of the compound (calculated from both the loss and modulus spectrum) is same, and hence the relaxation process may be attributed to the same type of charge carriers. A possible ‘hopping’ mechanism for electrical transport processes in the system is evident from the modulus analysis. A plot of dc conductivity (bulk) with temperature variation demonstrates that the compound exhibits Arrhenius type of electrical conductivity.      

Electrical properties of Sr<Subscript>3</Subscript>Bi<Subscript>4</Subscript>Ti<Subscript>6</Subscript>O<Subscript>21</Subscript> thin films

Highly c-axis-oriented Sr₃Bi₄Ti₆O₂₁ (SBTi) thin films were fabricated on Pt-coated Si substrates by pulsed laser deposition (PLD). The structures were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM). No peaks of SrTiO₃ (STO) could be detected in the XRD pattern, indicating the existence of the SBTi single phase. Good ferroelectric hysteresis loops of the films with Pt electrodes were obtained. With an applied field of 400 kV/cm, the measured remanent polarization (P_r) and coercive field (E_c) values were 4.1 C/cm² and 75 kV/cm respectively. The films showed little fatigue after 2.22×10⁹ switching cycles: the nonvolatile polarizations decreased by less than 5% of the initial values. The dielectric constant and the loss tangent of the films were measured to be 363 and 0.04 at 100 kHz. These results might be advantageous for nonvolatile ferroelectric random access memory (NVFRAM) and dynamic random access memory (DRAM). PACS 77.84.Dy; 77.22.-d; 68.55.Jk     

Glass-forming ability and thermal stability of Fe<Subscript>62</Subscript>Nb<Subscript>8−x</Subscript>Zr<Subscript>x</Subscript>B<Subscript>30</Subscript> and Fe<Subscript>72</Subscript>Zr<Subscript>8</Subscript>B<Subscript>20</Subscript> amorphous alloys?

Glass-forming ability (GFA) and thermal stability of Fe₆₂Nb₈B₃₀, Fe₆₂Nb₆Zr₂B₃₀ and Fe₇₂Zr₈B₂₀ at % amorphous alloys were investigated by calorimetric (DSC and DTA) measurements. The crystallization kinetics was studied by DSC in the mode of continuous versus linear heating and it was found that both the glass transition temperature, T _g , and the crystallization peak temperature, T _p , display strong dependence on the heating rate. The partial replacement of Nb by Zr leads to lower T _g and T _x temperatures and causes a decrease of the supercooled liquid region. JMA analysis of isothermal transformation data measured between T _g and T _x suggests that the crystallization of the Fe₆₂Nb₈B₃₀ and Fe₆₂Nb₆Zr₂B₃₀ amorphous alloys take place by three-dimensional growth with constant nucleation rate. Nb enhances the precipitation of the metastable Fe₂₃B₆ phase and stabilizes it up to the third crystallization stage. Zr addition increases the lattice constant of Fe₂₃B₆ and, at the same time, decreases the grain size.     

Structural,dielectric, electrical and piezoelectric properties of Ba<Subscript>4</Subscript>SrRTi<Subscript>3</Subscript>V<Subscript>7</Subscript>O<Subscript>30</Subscript> (R=Sm,Dy) ceramics

Polycrystalline samples of Ba₄SrRTi₃V₇O₃₀ (R=Sm and Dy), members of the tungsten-bronze family, were prepared using a high-temperature, solid-state reaction technique and studied their electrical properties (using complex impedance spectroscopy) in a wide range of temperature (31–500°C) and frequency (1 kHz-1 MHz). Preliminary structural (XRD) analyses of these compounds show the formation of single-phase, orthorhombic structures at room temperature. The scanning electron micrographs (SEM) provided information on the quality of the samples and uniform distribution of grains over the entire surface of the samples. Detailed studies of the dielectric properties suggest that they have undergone ferroelectric-paraelectric phase transition well above the room temperatures (i.e., 432 and 355°C for R= Sm and Dy, respectively, at frequency 100 kHz). Measurements of electrical conductivity (ac and dc) as a function of temperature suggest that the compounds have semiconducting properties much above the room temperature, with negative temperature coefficient of resistance (NTCR) behavior. The existence of ferroelectricity in these compounds was confirmed from a polarization study.      

Processing and some properties of biferroic Bi<Subscript>5</Subscript> Ti<Subscript>3</Subscript> FeO<Subscript>15</Subscript> ceramics

Bi₅Ti₃FeO₁₅ (BTF) is an example of bifferoic Aurivillius phase with perovskite layered structure. Materials on the basis BTF are of substantial interest for new types of magnetoelectric device applications. In this review we discuss technology of preparation biferroic ceramic with composition Bi₅Ti₃FeO₁₅. The ferroelectric layered Bi₅Ti₃FeO₁₅ (BTF) Aurivillius phases were synthesized by solid-phase synthesis reaction from the conventional mixture of oxides, viz. Bi₂O₃, Fe₂O₃, TiO₂. Thermal analysis and mass change efect were used to investigate synthesis effects in the stoichiometric mixture of powders. The crystalline structure was checked by X-ray diffraction method at room temperature. Microstructure was investigated by scanning electron microscopy.     

Magnetic behaviour of (Fe<Subscript>0.85</Subscript>Cr<Subscript>0.15</Subscript>)<Subscript>2</Subscript>As

Magnetization and neutron diffraction measurements have been made on the title pseudo-binary of tetragonal anti-ferromagnets Fe₂ As and Cr₂ As. In this system antiferromagnetic (AFM) ordering appears below 310 K. The moments are confined in theab plane but unlike in the end members they are tilted off thea-axis. In addition to the AFM structure a weak ferromagnetic behaviour shows up below∼80 K with a rather low moment of ∼0.07 μB per formula unit at 5 K and under a field of 3 T.     

Ferroelectric and dielectric properties of SrBi<Subscript>4</Subscript>Ti<Subscript>4</Subscript>O<Subscript>15</Subscript> thin films grown on Bi<Subscript>4</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> film layer

Ferroelectric and dielectric properties of bilayered ferroelectric thin films, SrBi₄Ti₄O₁₅ grown on Bi₄Ti₃O₁₂, were investigated. The thin films were annealed at 700°C under oxygen atmosphere. The bilayered thin films were prepared on a Pt(111)/Ti/SiO₂/Si substrate by a chemical solution deposition method. The dielectric constant and dielectric loss of the bilayered thin films were 645 and 0.09, respectively, at 100 kHz. The value of remnant polarization (2P _r) measured from the ferroelectric thin film capacitors was 60.5 μC/cm² at electric field of 200 kV/cm. The remnant polarization was reduced by 22% of the initial value after 10¹⁰ switching cycles. The results showed that the ferroelectric and dielectric properties of the SrBi₄Ti₄O₁₅ on Bi₄Ti₃O₁₂ ferroelectric thin films were better than those of the SrBi₄Ti₄O₁₅ grown on a Pt-coated Si substrate suggesting that the improved properties may be due to the different nucleation and growth kinetics of SrBi₄Ti₄O₁₅ on the c-axis-oriented Bi₄Ti₃O₁₂ layer or on the Pt-coated Si substrate.     

Controlled synthesis of photoluminescent Bi<Subscript>4</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> nanoparticles from metal-organic polymeric precursor

Bi₄Ti₃O₁₂ (BIT) nanoparticles with a narrow average particle size distribution in the range of 11–46 nm was synthesized via a metal-organic polymeric precursor process. The crystallite size and lattice parameter of BIT were determined by XRD analysis. At annealing temperatures >550 °C, the orthorhombic BIT compound with lattice parameters a = 5.4489 Å, b = 5.4147 Å, and c = 32.8362 Å was formed while at lower annealing temperatures orthorhombicity was absent. Reaction proceeded via the formation of an intermediate phase at 500 °C with a stoichiometry close to Bi₂Ti₂O₇. The particle size and the agglomerates of the primary particles have been confirmed by FESEM and TEM. The decomposition of the polymeric gel was ascertained in order to evaluate the crystallization process from TG-DSC analysis. Raman spectroscopy was used to investigate the lattice dynamics in BIT nanoparticles. In addition, investigation of the dependence of the visible emission band around the blue–green color emission on annealing temperatures and grain sizes showed that the effect of grain size plays important roles, and that oxygen vacancies may act as the radiative centers responsible for the observed visible emission band.     

Microstructures and impedance studies of Bi<Subscript>3.15</Subscript>Nd<Subscript>0.85</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> thin films

Microstructures and impedance characteristics of chemical-solution-derived Bi_3.15Nd_0.85Ti₃O₁₂ thin films were studied as functions of temperature. A dielectric anomaly was found at around 450°C, corresponding to the paraelectric to ferroelectric transition. Via complex impedance studies, grain and grain boundary contributions to the impedance were separated. The resistance of grain and grain boundaries is found governed by the same kind of space charge with an activation energy around 1.1 eV, close to that of oxygen vacancies in perovskite ferroelectrics. The low temperature ac conductance of BNdT thin films shows a frequency dispersion, which can also be ascribed to space charges mainly due to oxygen vacancies. The results were compared with SrBi₂Ta₂O₉ in terms of oxygen vacancy conductivity.     

Solid state synthesis of nonstoichiometric Bi<Subscript>2</Subscript>WO<Subscript>6</Subscript>/Bi<Subscript>2</Subscript>O<Subscript>3</Subscript> composites as visible-light photocatalyst

Nonstoichiometric Bi₂WO₆ photocatalyst with the composition of Bi_2?+?x WO_6?+?1.5x (?0.25 ≤ x ≤ 1) wa synthesized by a facile solid state reaction method. The products were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and UV-vis absorption spectrum. The Bi_2.5WO_6.75 photocatalyst showed excellent visible-light-driven photocatalytic performance; nearly 100 % of RhB (10 ppm, pH?=?3?~?4) was decomposed within 25 min, which demonstrated that nonstoichiometric semiconductors could be an efficient visible-light-driven photocatalyst.     

Magnetic phases in Mn<Subscript>1</Subscript>_<Subscript>x</Subscript>Fe<Subscript>x</Subscript>WO<Subscript>4</Subscript> studied by neutron powder diffraction

The magnetic structures of Mn_1-xFe_xWO₄ with x = 0.0, 0.16, 0.21, 0.225, 0.232, 0.24, 0.27, 0.29, and 1.0 were refined from neutron powder diffraction data. The magnetic phase diagram could be completed in the coexistence range of different magnetic structures up to x = 0.29. For the magnetic state at 1.5 K a commensurate antiferromagnetic structure with a propagation vector = (±1/4, 1/2, 1/2) was found for x ⩽ 0.22 while the magnetic spins order with = (1/2, 0, 0) for x ≥ 0.22. In the latter phase, additionally, weak magnetic reflections indexed to an incommensurate ordering with = (- 0.214, 1/2, 0.457) occur in the diffraction pattern up to x = 0.29 indicating the occurence of a reentrant phase. For 0.12 ⩽ x ⩽ 0.29 the low temperature phases are separated from a magnetic high temperature phase showing only magnetic reflections indexed to a spin arrangement with = (1/2, 0, 0). The magnetic phase diagram is discussed qualitatively considering random superexchange between the statistically distributed Mn²⁺- and Fe²⁺-ions in the coexistence range 0.12 ⩽ x ⩽ 0.29 of different magnetic structures related to those of pure MnWO₄ and FeWO₄. Received 9 October 2002 Published online 14 March 2003     

Peroxide-based route assisted with inverse microemulsion process to well-dispersed Bi<Subscript>4</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> nanocrystals

Well-dispersed bismuth titanate (BIT) nanocrystals with an average size ranged from 3 to 60 nm were synthesized via a peroxide-based route assisted with an inverse microemulsion process. The crystallite size and lattice parameter of BIT upon variable-temperature were determined by X-ray diffraction (XRD). The particle size was confirmed by transmission electron microscopy (TEM). Thermal decomposition behaviour of Ti-peroxy and BIT gel and crystallization kinetics of BIT nanocrystals were investigated by differential scanning calorimetry/thermogravimetry (DSC/TG) and Fourier-Transform infrared spectroscopy (FTIR). Analysis of nonisothermal DSC data yielded a value of 220.84 ± 2.73 KJ/mol and 2.25 ± 0.26 for the activation energy of crystallization (E _a) and the Avrami exponent (n), respectively.     

<Emphasis Type="Italic">In situ</Emphasis> X-ray diffraction study of structural evaluation in Fe<Subscript>73</Subscript>Cu<Subscript>1.5</Subscript>Nd<Subscript>3</Subscript>Si<Subscript>13.5</Subscript>B<Subscript>9</Subscript> amorphous alloy at high temperature

The thermodynamics structural relaxation of Fe₇₃Cu_1.5Nd₃Si_13.5B₉ amorphous alloy from room temperature to 400°C has been investigated by measuring the structure factor with in situ X-ray diffraction. The structural information of the atomic configuration such as radial distribution function (RDF) and neighbor atomic distance was gained by Fourier transformation. The research result shows that the amorphous structure remains stable in the temperature range of 30 to 400°C but exhibits distinct changes in local atomic configuration with the increase of temperature. The quantitative determination of the neighbor atomic distance suggests that the degree of short-range order changes by the temperature altering the second nearest neighbor local atomic configuration of the amorphous when structural relaxation occurs. Supported by the Natural Science Foundation of Hebei Province of China (Grant No. A2007000296), the National Natural Science Foundation of China (Grant No. 50731005), SKPBRC (Grant Nos. 2007CB616915 and 2006CB605201), and PCSIRT (Grant No. IRT0650)     

Study on the spin-states of cobalt-based double-layer perovskite Sr<Subscript>2</Subscript>Y<Subscript>0.5</Subscript>Ca<Subscript>0.5</Subscript>Co<Subscript>2</Subscript>O<Subscript>7</Subscript>

The spin-states of cobalt based perovskite compounds depend sensitively on the valence state and local crystal environment of Co ions and the rich physical properties arise from strong coupling among charge, spin, and orbital degrees of freedom. While extensive studies have been carried out in the past, most of them concentrated on the isotropic compound LaCoO₃. In this paper, using the unrestricted Hartree-Fock approximation and the real-space recursion method, we have investigated the competition of various magnetically ordered spin-states of anisotropic double-layered perovskite Sr₂Y_0.5Ca_0.5Co₂O₇. The energy comparison among these states shows that the nearest-neighbor high-spin-intermediate-spin ferromagnetically ordered state is the relevant magnetic ground state of the compound. The magnetic structure and sizes of magnetic moments are consistent with the recent experimental observation.     

Preparation and electrical properties of Bi<Subscript>3.25</Subscript>Pr<Subscript>0.75</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> ferroelectric thin films

Bi_3.25Pr_0.75Ti₃O₁₂ (BPT) ferroelectric thin films have been prepared by chemical solution deposition on platinized Si substrates. Well-crystallized BPT films can be achieved by 600 °C rapid thermal annealing. The film surface is smooth and crack-free, composed of uniform spherical grains around 90–100 nm in diameter. The electrical properties of Pt/BPT/Pt thin film capacitors were characterized by hysteresis and impedance measurements. The remanent polarization of 700 °C annealed BPT films is around 20 C/cm² at 120-kV/cm stimulus field. The dielectric constant is around 380 at 10 kHz, 100-mV amplitude. The remanent polarization of BPT film showed a slight reduction, 10% of its original value, after 2.8×10⁹ cycles, while a 30% reduction of non-volatile polarization was observed. PACS 81.15.-z; 77.55.+f; 77.22.Gm     

First-order character of the displacive structural transition in BaWO₄

Nearly all displacive transitions have been considered to be continuous or second order,and the rigid unit mode(RUM) provides a natural candidate for the soft mode.However,in-situ X-ray diffraction and Raman measurements show clearly the first-order evidences for the scheelite-to-fergusonite displacive transition in BaWO 4:a 1.6% volume collapse,coexistence of phases,and hysteresis on release of pressure.Such first-order signatures are found to be the same as the soft modes in BaWO 4,which indicates the scheelite-to-fergusonite displacive phase transition hides a deeper physical mechanism.By the refinement of atomic displacement parameters,we further show that the first-order character of this phase transition stems from a coupling of large compression of soft BaO 8 polyhedrons to the small displacive distortion of rigid WO 4 tetrahedrons.Such a coupling will lead to a deeper physical insight in the phase transition of the common scheelite-structured compounds.     

Synthesis of ZnAl<Subscript>2</Subscript>O<Subscript>4</Subscript>/α-Al<Subscript>2</Subscript>O<Subscript>3</Subscript> complex substrates and growth of GaN films

With the solid phase reaction between pulsed-laser-deposited (PLD) ZnO film and α-Al₂O₃ substrate, ZnAl₂O₄/α-Al₂O₃ complex substrates were synthesized. X-ray diffraction (XRD) spectra show that as the reaction proceeds, ZnAl₂O₄ changes from the initial (111)-oriented single crystal to poly-crystal, and then to inadequate (111) orientation. Corresponding scanning electron microscope (SEM) images indicate that the surface morphology of ZnAl₂O₄ transforms from uniform islands to stick structures, and then to bulgy-line structures. In addition, XRD spectra present that ZnAl₂O₄ prepared at low temperature is unstable at the environment of higher temperature. On the as-obtained ZnAl₂O₄/α-Al₂O₃ substrates, GaN films were grown without any nitride buffer using light-radiation heating low-pressure MOCVD (LRH-LP-MOCVD). XRD spectra indicate that GaN film on this kind of complex substrate changes fromc-axis single crystal to poly-crystal as ZnAl₂O₄ layer is thickened. For the single crystal GaN, its full width at half maximum (FWHM) of X-ray rocking curve is 0.4°. Results indicate that islands on thin ZnAl₂O₄ layer can promote nucleation at initial stage of GaN growth, which leads to the (0001)-oriented GaN film.