Efficient thin-disk Tm-laser operation based on Tm:KLu(WO4)2/KLu(WO4)2 epitaxies

A diode-pumped thin-disk laser based on Tm:KLu(WO4)2/KLu(WO4)2 epitaxies is realized. The emission is in the 1850-1945 nm spectral range for Tm-doping between 5 and 15 at. %. The maximum slope efficiency of 47% with respect to the absorbed power obtained with 5 at. % Tm:KLu(WO4)2/KLu(WO4)2 corresponds to a maximum output power of ~6 W in cw operation.     

Efficient high-power laser operation of Yb:KLu(WO4)2 crystals cut along the principal optical axes

High-power continuous-wave laser operation was demonstrated with Yb:KLu(WO(4))(2) crystals cut along the N(p), N(m), and N(g) principal optical axes, achieving a nearly equal slope efficiency of 79%-80% in the absence of thermal effects. The N(g)-cut crystal proved to be the most advantageous for power scaling as well as efficient pumping. A maximum output power of 11.0 W was produced from a 2 mm thick uncoated N(g)-cut crystal in a approximately 7 mm long plano-concave resonator end pumped by a fiber-coupled diode; the corresponding optical-to-optical efficiency was 68%.     

Mode-locked laser operation of epitaxially grown Yb:Klu(WO4)2 composites

Mode locking based on an epitaxial composite of the monoclinic double tungstate crystal Yb:KLu(WO4)2 is realized. A 100 microm thin Yb:KLu(WO4)2 layer grown on a KLu(WO4)2 substrate is used as an active medium in a laser passively mode locked by a semiconductor saturable absorber. Pulse durations of 114 fs have been achieved for an average power of 31 mW at 1030 nm. Results in the femtosecond and picosecond regimes of the Yb:KLu(WO4)2/KLu(WO4)2 laser are presented. The great potential of Yb-doped tungstate composite structures as active elements for mode-locked laser systems is demonstrated.     

Passively mode-locked Yb:KLu(WO4)2 thin-disk oscillator operated in the positive and negative dispersion regime

We demonstrate a passively mode-locked femtosecond Yb:KLu(WO(4))(2) thin-disk laser oscillator. Chirped-pulse operation in the positive dispersion regime as well as solitary operation have been realized, and the laser performance of both configurations are compared. In the solitary mode-locking regime the output power exceeds 25 W in a diffraction-limited beam, and pulse durations as short as 440 fs at a 34.7 MHz repetition rate have been generated. For the first time we present a chirped-pulse operation of a thin-disk oscillator that yields a maximum average output power of 9.5 W with a Fourier limit of 450 fs.     

Pulsed laser operation of Y b-dope d KY(WO(4))(2) and KGd(WO(4))(2)

Spectroscopic properties and laser performance of Y b-doped tungstates at pulsed Ti:sapphire laser pumping are reported. Room-temperature lasing near 1025nm is demonstrated in Yb:KY(WO(4))(2) and Yb:KGd(WO(4))(2), with a slope efficiency as great as 86.9%.     

Lu, Gd codoped KY(WO(4))(2):Yb epitaxial layers: towards integrated optics based on KY(WO(4))(2)

Codoping KY(WO(4))(2):Yb layers with optically inert Lu and Gd ions allows a large increase of the refractive index contrast with respect to KY(WO(4))(2) substrates. This paves the way for the realization of integrated optical circuits based on this very promising material. First riblike waveguide structures have been fabricated and propagation losses below 1 dB/cm have been evaluated. A Y-junction with a splitting ratio close to 1:1 and additional losses of 1.4 dB has also been demonstrated.     

Efficient passively Q-switched laser operation of Yb in the disordered NaGd(WO4)2 crystal host

Efficient passively Q-switched laser operation of the disordered Yb:NaGd(WO(4))(2) crystal is demonstrated for the first time to our knowledge with a Cr(4+):YAG saturable absorber by diode end pumping. 2.05 W of average output power at a pulse repetition frequency of 13.3 kHz was obtained at an absorbed pump power of 7.7 W, with a slope efficiency of 40%. The energy and duration of the generated laser pulse were 154 microJ and 33 ns, respectively, corresponding to a peak power of 4.67 kW. In continuous-wave operation, the Yb:NaGd(WO(4))(2) laser yielded an output power of 5.5 W with an optical-optical efficiency of 51%.     

Spectroscopic characterization and laser performance of resonantly diode-pumped Er(3+)-doped disordered NaY(WO4)2

We report what is believed to be the first resonantly pumped laser operation based on Er(3+)-doped disordered double tungstate single crystal. Efficient laser operation of an Er(3+):NaY(WO(4))(2) laser at ～1609.6 nm was demonstrated with the naturally wideband, ～20 nm, InGaAsP/InP laser diode pumping at ～1501 nm. Laser wavelength tunability of ～34 nm was also demonstrated based on disorder-broadened emission features of Er(3+):NaY(WO(4))(2) single crystal.     

Vibrational properties of RbNd(WO4)2: high pressure Raman study, structural and phonon calculations

RbNd(WO(4))(2) was investigated by high pressure Raman spectroscopy in the 0.1-12.3 GPa pressure interval. The assignment of modes was made based on lattice dynamics calculations and the results of these calculations helped us to also discuss the high pressure behavior of phonon spectra in this material. Our results show that a double oxygen bridge plays a fundamental role in the vibrational properties of this system. A density functional theory (DFT) calculation of hydrostatic pressure effects on RbNd(WO(4))(2) was performed in order to understand the effect of internal bond changes on the vibrational properties of RbNd(WO(4))(2). No pressure induced structural phase transition was observed in the Raman study at room temperature, and the DFT calculation (T = 0 K) is consistent with this result. The anomalous softening of the bridge stretching mode at 770 cm(-1) was attributed to the decrease of W-O1-W bond angle with increasing pressure.     

Efficient continuous-wave and Q-switched operation of a diode-pumped Yb:KLu(WO4)2 laser with self-Raman conversion

Efficient cw and passively Q-switched operation with self-stimulated Raman scattering conversion was demonstrated in a compact diode-pumped Yb:KLu(WO4)2 laser. A cw output power of 3.28 W was obtained with an optical efficiency of 48.2% and a slope efficiency of 78.2% with respect to the incident pump power. Stable Q-switched operation was achieved with a Cr4+:YAG saturable absorber, generating 32.4 microJ fundamental pulses with a duration of 1.41 ns at 1030.6 nm and 14.4 microJ Raman pulses with a duration of 0.71 ns at 1137.6 nm. At an incident pump power of 7.0 W, the average output power reached 0.9 and 0.4 W for fundamental and Raman radiation, with slope efficiencies of 32.1% and 14.1%, respectively.     

Diode-pumped passively mode-locked Nd:KGd(WO(4))(2) laser with 1-W average output power

Continuous-wave passive mode locking of a diode-pumped Nd:KGd(WO(4))(2) laser is demonstrated. The use of a saturable Bragg reflector as the mode-locking element permits the generation of 6.3-ps pulses, assuming a sech(2) pulse shape. An output power of 1 W was obtained, which corresponds to a slope efficiency of 34.5%.     

Crystal growth,optical spectroscopy,and continuous-wave laser operation of Ho:KLu(WO4)2 crystals

We present the crystal growth, optical spectroscopy, and room temperature continuous-wave (CW) laser operation of monoclinic Ho:KLu(WO₄)₂ crystals. Macro defect-free crystals of several dopant concentrations were grown by top-seeded solution growth slow-cooling method. The evolution of unit cell parameters with holmium doping level and temperature was studied using X-ray powder diffraction. The spectroscopic properties were characterized in terms of room- and low-temperature optical absorption and photoluminescence. From low-temperature optical absorption measurements, the energy of the Stark levels was determined. Calculation of the emission and gain cross sections is presented. CW laser action was realized for 3 and 5 at. % Ho-doped KLu(WO₄)₂ by in-band pumping using a Tm:KLu(WO₄)₂ pump laser. A maximum output power of 507 mW with a slope efficiency of ~38 % with respect to the incident power was achieved at 2,080 nm with the Ho:KLu(WO₄)₂ laser.     

Multifrequency parametric infrared Raman generation in KGd(WO(4))(2) crystal with biharmonic ultrashort-pulse pumping

Mutlifrequency parametric Raman generation was carried out in a KGd(WO(4))(2) crystal by use of a dual-wavelength Ti:sapphire laser system. It was found that with femtosecond pump pulses the efficiency of Raman generation is low because of the onset of self-phase modulation. The mechanism for suppression of stimulated Raman scattering by self-phase modulation is discussed. Employing 2-ps-long chirped pulses generated four Stokes and one anti-Stokes component.     

Diode-pumped Kerr-lens mode-locked Yb:KY(WO(4))(2) laser

A self-starting Kerr-lens mode-locked Yb:KY(WO(4))(2) laser directly end pumped by two 1.6-W diodes is demonstrated for what is to our knowledge the first time. Pulses as short as 71 fs with 120-mW average output power, at a center wavelength of 1057 nm, were obtained at a repetition rate of 110 MHz. A 10-nm tuning range was achieved with longer pulses and higher average output power.     

Passive Q switching and self-frequency Raman conversion in a diode-pumped Yb:KGd(WO(4))(2) laser

We report on the laser performance of a diode-pumped Yb:KGd(WO(4))(2) laser that is passively Q switched with a Cr(4+):YAG saturable absorber. Raman conversion of fundamental laser emission in the laser crystal was demonstrated. Q-switched 3.4-mu;J pulses with a pulse width of 85 ns were obtained at the 1033-nm fundamental wavelength and 0.4-mu;J pulses with a pulse width of 20 ns were produced in a first Stokes at 1139 nm.     

Directly diode-pumped Yb:KY(WO(4))(2) regenerative amplifiers

Two Yb(3+) -doped KY(WO(4))(2) regenerative amplifiers, one end pumped by two 1.6-W single-stripe diodes at 940 nm and the other side pumped by one 20-W diode bar at 980 nm, are demonstrated. When the regenerative amplifiers are injected, 40-muJ , 400-fs and 65-muJ , 460-fs pulses at a 1-kHz repetition rate are obtained following compression from the end- and side-pumped amplifiers, respectively.     

240-fs pulses with 22-W average power from a mode-locked thin-disk Yb:KY(WO(4))(2) laser

We demonstrate what is to our knowledge the first passively mode-locked thin-disk Yb:KY(WO(4))(2) laser. The laser produces pulses of 240-fs duration with an average power of 22 W at a center wavelength of 1028 nm. At a pulse repetition rate of 25 MHz, the pulse energy is 0.9microJ , and the peak power is as high as 3.3 MW. The beam quality is very close to the diffraction limit, with M(2)=1.1 .     

单斜结构的Yb:KLu(WO4)2晶体光谱和激光性质的各向异性

研究了Yb:KLu(WO₄)₂晶体对非偏振抽运光的吸收以及连续波激光振荡性质. 晶体结构的低对称性导致晶体光谱呈强烈各向异性,最强的吸收和发射都发生在平行于N_m主轴的偏振方向上. N_g切向晶体具有最高的非偏振抽运光吸收效率和最大的激光功率产生潜力,2 mm长的晶体产生的最高连续波输出功率为11 W,相对于吸收抽运功率,光—光转换效率为68%,而斜率效率则达80%. 关键词： 吸收谱 发射谱 激光振荡 各向异性     

Efficient femtosecond green-light source with a diode-pumped mode-locked Yb3+:KY(WO4)2 laser

Efficient generation of femtosecond pulses at 524 nm is demonstrated by the extracavity frequency doubling of the output of a diode-pumped femtosecond Yb3+:KY(WO4)2 laser using a periodically poled LiTaO3 crystal. An average second-harmonic power of 120 mW is produced at an internal conversion efficiency of 40%. The temporal characteristics of the frequency-doubled pulses as a function of focusing conditions in a thick nonlinear crystal are investigated experimentally, and pulses as short as 225 fs are generated at a pulse repetition frequency of 86 MHz.     

Nd∶KY(WO4)2和Nd∶KG(WO4)2晶体吸收光谱性能分析

通过研究分析钨酸盐晶体Nd∶KY(WO₄)₂和Nd∶KG(WO₄)₂在室温下的吸收光谱，发现这2种晶体具有作为激光晶体的优良特性。根据Judd-Ofelt理论和测试所得的吸收光谱及数据，用VC++编程计算出晶体的谱线强度、振子强度、吸收截面等，拟合得Nd³⁺离子的3个晶场调节参数Ω_λ(λ=2，4，6)的值，并从理论上计算了自发跃迁几率、能级寿命、荧光分支比和积分发射截面。从计算得出的荧光分支比β可以看出，Nd∶KY(WO₄)₂(β_1060nm=0.4380)和Nd∶KG(WO₄)₂(β_1060nm=0.4618)晶体荧光分支比都较大，计算了该晶体的X=Ω₄/Ω₆，并将其X值与其他晶体的X值加以比较，Nd∶KY(WO₄)₂和Nd∶KG(WO₄)₂均易于实现1.06μm激光输出，适合作为LD泵浦的钨酸盐晶体激光器。