Synthesis and characterization of quaternary selenides Sn2Pb5Bi4Se13 and Sn8.65Pb0.35Bi4Se15

Quaternary selenides Sn₂Pb₅Bi₄Se₁₃ and Sn_8.65Pb_0.35Bi₄Se₁₅ were synthesized from the elements in sealed silica tubes; their crystal structures were determined by single-crystal and powder X-ray diffraction. Both compounds crystallize in monoclinic space group C2/m (No.12), with lattice parameters of Sn₂Pb₅Bi₄Se₁₃: a = 14.001(6) Å, b = 4.234(2) Å, c = 23.471(8) Å, V = 1376.2(1) Å³, R₁/wR₂ = 0.0584/0.1477, and GOF = 1.023; Sn_8.65Pb_0.35Bi₄Se₁₅: a = 13.872(3) Å, b = 4.2021(8) (4) Å, c = 26.855(5) Å, V = 1557.1(5) Å³, R₁/wR₂ = 0.0506/0.1227, and GOF = 1.425. These compounds exhibit tropochemical cell-twinning of NaCl-type structures with lillianite homologous series L(4, 5) and L(4, 7) for Sn₂Pb₅Bi₄Se₁₃ and Sn_8.65Pb_0.35Bi₄Se₁₅, respectively. Measurements of electrical conductivity indicate that these materials are semiconductors with narrow band gaps; Sn₂Pb₅Bi₄Se₁₃ is n-type, whereas Sn_8.65Pb_0.35Bi₄Se₁₅ is a p-type semiconductor with Seebeck coefficients −80(5) and 178(7) μV/K at 300 K, respectively.     

Thermoelectric and microstructural properties of Pb0.9−xSn0.1GexTe compounds prepared by spinodal decomposition

Three samples of Pb_0.9−xSn_0.1Ge_xTe with x=0.25, 0.35, 0.6 were prepared by heating the mixtures above the melting point of the constituent elements followed by quenching in water. The x=0.6 sample is close to the center of the immiscibility region, while the x=0.25 and 0.35 samples are in the Pb rich region inside the spinodal miscibility gap. Microstructural investigations using Powder X-ray Diffraction, Scanning Electron Microscopy and Energy Dispersive X-ray Spectroscopy revealed both GeTe-rich and PbTe-rich phases. The samples were uniaxially hot pressed and the thermoelectric properties were characterized in the temperature range 2-400 K using a commercial apparatus and from 300 to 650 K with a custom designed setup. The best sample (x=0.6) reached zT≈0.6 at 650 K, while the x=0.25 and 0.35 samples showed thermal instability at elevated temperatures.     

Nano-sized Cu6Sn5 alloy prepared by a co-precipitation reductive route

Nano-sized Cu₆Sn₅ alloy powders were prepared by a co-precipitation reductive route using a hydrothermal method at 80 °C. The nano-size and morphology of the synthesized Cu₆Sn₅ alloy powders were evaluated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The obtained morphologies, chemical compositions are comparatively discussed. A variety of synthesis parameters, such as time, capping agent and sort of reductant, has an effect on the morphology of the obtained materials, and will be particularly highlighted.     

Tailoring of Electronic Structure and Thermoelectric Properties of a Topological Crystalline Insulator by Chemical Doping

Topological crystalline insulators (TCIs) are a new quantum state of matter in which linearly dispersed metallic surface states are protected by crystal mirror symmetry. Owing to its vanishingly small bulk band gap, a TCI like Pb_0.6Sn_0.4Te has poor thermoelectric properties. Breaking of crystal symmetry can widen the band gap of TCI. While breaking of mirror symmetry in a TCI has been mostly explored by various physical perturbation techniques, chemical doping, which may also alter the electronic structure of TCI by perturbing the local mirror symmetry, has not yet been explored. Herein, we demonstrate that Na doping in Pb_0.6Sn_0.4Te locally breaks the crystal symmetry and opens up a bulk electronic band gap, which is confirmed by direct electronic absorption spectroscopy and electronic structure calculations. Na doping in Pb_0.6Sn_0.4Te increases p‐type carrier concentration and suppresses the bipolar conduction (by widening the band gap), which collectively gives rise to a promising zT of 1 at 856 K for Pb_0.58Sn_0.40Na_0.02Te. Breaking of crystal symmetry by chemical doping widens the bulk band gap in TCI, which uncovers a route to improve TCI for thermoelectric applications.     

Determination of lead,tin, tellurium,and some doping elements in PbxSn1−xTe

A single method, based on gravimetric and polarographic analysis, has been developed to determine, in the same sample, the fundamental constituents and some doping elements in the Pb_xSn_1?xTe system. First tellurium is separated by sulfur dioxide in an acid solution (5% in HCl). This medium is suitable both for the total tellurium separation and for the subsequent tin precipitation by phenylarsonic acid. Moreover, this analytical procedure allows determination in the same sample, the concentration of some doping elements such as copper, cadmium, and zinc which are necessary to vary some physical properties of the Pb_xSn_1?xTe semiconductor system. The trace elements were determined by stripping voltammetry after tellurium, tin, and lead separation. The residual solution contains a variable amount of phenylarsonic acid which makes difficult quantitative polarographic measurements, because the electrodissolution potentials are varied and peak heights are masked. However, polarographic measurements are not altered through a wide range of phenylarsonic acid concentration if the solution is previously neutralized.     

Luminescence properties of Eu2+, Sn2+, and Pb2+ in SrB6O10 and Sr1 − xMnxB6O10

The luminescence properties of Eu²⁺, Sn²⁺, and Pb²⁺ in SrB₆O₁₀ have been studied both at room-temperature and liquid-helium temperature and the decay times of Sn²⁺ and Pb²⁺ in this matrix have been measured and analyzed. According to the emission spectrum of Eu²⁺ there seems to be three different cation sites in SrB₆O₁₀. Europium, tin, and lead were also used as sensitizers for Mn²⁺ and the energy transfer processes were characterized. Eu²⁺-Mn²⁺ energy transfer was inefficient due to the transfer within different Eu²⁺ centers. The sensitization action of Sn²⁺ and Pb²⁺ on Mn²⁺ was different because lead-lead energy transfer occurs (even at 4.2 K) but tin-tin transfer can be neglected. A fast diffusion model for the Pb²⁺ system is suggested.     

Lattice temperature and hyperfine interactions of Pb1−xSnxTe (0.21 ≤ x ≤ 0.75)

Thin (<15 μm) samples of lead tin telluride, Pb_1?xSn_xTe (x = 0.21, 0.25, 0.55, and 0.75) have been studied by temperature dependent Mössbauer spectroscopy using the 23.8 keV gamma radiation of ^119mSn. The tin atom occupies a lattice site having cubic symmetry (QS = 0 ± 0.020 mm sec^?1) over the temperature range 78 ≤ T ≤ 240 K, and there is no evidence for a rhombic (low temperature) to cubic (high temperature) phase transition such as that reported for SnTe in this temperature interval. The lattice temperature as probed by the Sn atom is independent of the compositional parameter x and is similar to that reported for SnTe from Mössbauer studies and for Pb_0.63Sn_0.37Te from X-ray powder diffraction data. Radiation damage produced by 2-MeV proton irradiation to a total fluence of ～10¹⁷ cm^?2 at liquid nitrogen temperature does not have any effect on the Mössbauer parameters, possibly because the major damage is annealed at temperatures below 150 K.     

Low-temperature thermal properties of Pb2P2Se6 and Pb1.424Sn0.576P2Se6

The heat capacities of Pb₂P₂Se₆ and Pb_1.424Sn_0.576P₂Se₆ were measured at temperatures between 10 and 320 K for the former and between 10 and 330 K for the latter. The heat capacities values were analyzed by harmonic approximation using the Debye and Einstein functions. They were calculated using 3 Debye and 7, 7, 7, 6 Einstein sets. The calculated heat capacities were in good agreement with the observed ones.     

New transparent conductors with the M7O12 ordered oxygen-deficient fluorite structure: from In4Sn3O12 to In5.5Sb1.5O12

A new transparent conductor, containing pentavalent antimony, In_4+xSn_3−2xSb_xO₁₂, has been synthesized for 0?x?1.5. The latter exhibits an ordered oxygen-deficient fluorite structure with an ordered distribution of Sb⁵⁺ and In³⁺/Sn⁴⁺ species in the octahedral and seven-fold coordinated sites, respectively. More importantly, it is shown that the electronic conductivity of this transparent conducting oxide (TCO) at room temperature, is one order of magnitude larger for x=1 (In₅SnSbO₁₂) than for x=0 (In₄Sn₃O₁₂) and it turns to a semi-metallic behavior in contrast to In₄Sn₃O₁₂ which is a semi-conductor. The potential of this new material, as TCO, is also shown by its reflectance spectra, similar to In₄Sn₃O₁₂, involving only a small increase of the optical bandgap, by 0.15 eV.     

Thermoelectric properties of HPHT sintered In-doped Pb0.5Sn0.5Te

The thermoelectric properties of Pb_0.5Sn_0.5Te doped with In at 1.0, 2.0, and 3.0×10¹⁹/cm³ and sintered at a high pressure and high temperature (HPHT) of 4.0 GPa and 800 or 900 °C, respectively, have been studied. All samples show p-type semiconducting behavior with positive thermopower. We find that HPHT sintering of conventionally synthesized materials improves their thermoelectric properties. The highest power factor is obtained for In doping of 2.0×10¹⁹/cm³ with 13.5 μW/cm K² at 230 °C. The corresponding figure of merit is 1.43×10⁻³/K. This represents a twofold improvement in thermoelectric figure of merit, compared to the conventionally sintered materials reported in the literature. When exposed to 400 °C for 10 days, samples sintered at 900 °C exhibit more stable thermoelectric properties, while the properties of those sintered at 800 °C deteriorated. These results demonstrate that HPHT sintering is a viable and controllable way of tuning the thermoelectric properties of PbTe-based materials.     

Synthesis and phase width of new quaternary selenides PbxSn6−xBi2Se9 (x=0-4.36)

Quaternary chalcogenides Pb_xSn_6−xBi₂Se₉ (x=0-4.36) were synthesized with solid-state methods; their structures were determined from the X-ray diffraction of single crystals. Pb_xSn_6−xBi₂Se₉ crystallizes in an orthorhombic space group Cmcm (No. 63); the structure features a three-dimensional framework containing slabs of NaCl-(3 1 1) type that exhibits identical layers containing seven octahedra units, which expand along the direction [0 1 0]. Each slab contains fused rectangular units that are connected to each other with M-Se contacts in a distorted octahedral environment. Calculations of the band structure, measurements of Seebeck coefficient and electrical conductivity confirm that these compounds are n-type semiconductors with small band gaps and large electrical conductivities.     

Snx[BPO4]1−x composites as negative electrodes for lithium ion cells: Comparison with amorphous SnB0.6P0.4O2.9 and effect of composition

A comparative study of two Sn-based composite materials as negative electrode for Li-ion accumulators is presented. The former SnB_0.6P_0.4O_2.9 obtained by in-situ dispersion of SnO in an oxide matrix is shown to be an amorphous tin composite oxide (ATCO). The latter Sn_0.72[BPO₄]_0.28 obtained by ex-situ dispersion of Sn in a borophosphate matrix consists of Sn particles embedded in a crystalline BPO₄ matrix. The electrochemical responses of ATCO and Sn_0.72[BPO₄]_0.28 composite in galvanostatic mode show reversible capacities of about 450 and 530 mAh g⁻¹, respectively, with different irreversible capacities (60% and 29%). Analysis of these composite materials by ¹¹⁹Sn Mössbauer spectroscopy in transmission (TMS) and emission (CEMS) modes confirms that ATCO is an amorphous Sn^II composite oxide and shows that in the case of Sn_0.72[BPO₄]_0.28, the surface of the tin clusters is mainly formed by Sn^II in an amorphous interface whereas the bulk of the clusters is mainly formed by Sn⁰. The determination of the recoilless free fractions f (Lamb-Mössbauer factors) leads to the effective fraction of both Sn⁰ and Sn^II species in such composites. The influence of chemical composition and especially of the surface-to-bulk tin species ratio on the electrochemical behaviour has been analysed for several Sn_x[BPO₄]_1−x composite materials (0.17<x<0.91). The cell using the compound Sn_0.72[BPO₄]_0.28 as active material exhibits interesting electrochemical performances (reversible capacity of 500 mAh g⁻¹ at C/5 rate).     

Hyperfine interactions and lattice dynamics of Sn21O6Cl16(OH)14

In this study, the tin(II) oxy-hydroxychloride Sn₂₁O₆Cl₁₆(OH)₁₄ has been synthesised and investigated. This compound is the synthetic equivalent of mineral abhurite, which was discovered in 1985 as a tin corrosion product formed on the surface of tin ingots after long immersion in seawater. The Mössbauer parameters of Sn₂₁O₆Cl₁₆(OH)₁₄ determined at various temperatures are reported and discussed for the first time. At room temperature, the isomer shift and the quadrupole splitting are, respectively, δ=3.22 mm s⁻¹ and Δ=1.71 mm s⁻¹, relative to the centroid of the spectrum of BaSnO₃. The Mössbauer recoil-free fraction has been also evaluated over a wide range of temperature. At 300 K, the recoil-free fraction of Sn₂₁O₆Cl₁₆(OH)₁₄ is f₃₀₀=0.09±0.02.     

A high temperature superionic phase of CsSn2F5

The compound CsSn₂F₅ has been investigated over the temperature range from ambient to 545 K using differential scanning calorimetry, impedance spectroscopy and neutron powder diffraction methods. A first-order phase transition is observed from DSC measurements at 510(2) K, to a phase possessing a high ionic conductivity (σ∼2.5×10⁻² Ω⁻¹ cm⁻¹ at 520 K). The crystal structure of the high temperature superionic phase (labelled α) has been determined to be tetragonal (space group I4/mmm, a=4.2606(10) Å, c=19.739(5) Å and Z=2) in which the cations form layers perpendicular to the [001] direction, with a stacking sequence CsSnSnCsSnSn… All the anions are located in two partially occupied sites in the gap between the Cs and Sn layers, whilst the space between the Sn cations is empty, due to the orientation of the lone-pair electrons associated with the Sn²⁺. The structure of α-CsSn₂F₅ is discussed in relation to two other layered F⁻ conducting superionic phases containing Sn²⁺ cations, α-RbSn₂F₅ and α-PbSnF₄ and, to facilitate this comparison, an improved structural characterisation of the former is also presented. The wider issue of the role of lone-pair cations such as Sn²⁺ in promoting dynamic disorder within an anion substructure is also briefly addressed.     

Neutron activation analysis of PbxSn1-xTe using extraction chromatography

A simple procedure of neutron activation analysis for the determination of 16 impurities in Pb_xSn_1–xTe with detection limits from 1×10^–4% for Ni and Zr to 2×10^–9% for Sc has been developed. The procedure is based on extraction chromatographic separation of impurities from the irradiated sample.     

裸露金属簇状化合物K4PbxSn9-x的119Sn、207Pb多核核磁共振研究

本文对乙二胺溶液中裸露金属原子簇用¹¹⁹Sn及²⁰⁷Pb核磁共振作了研究。对每个峰做了标识。根据谱线强度进行分析,得知溶液中锡与铅的比例大于固体中的比例。从自由能的角度看,Pb₂Sn₇^4-是最不稳定的一种原子簇,本文还对谱线中各条线都进行了理论拟合,结果与实验相吻合。     

Highly Converged Valence Bands and Ultralow Lattice Thermal Conductivity for High‐Performance SnTe Thermoelectrics

A two‐step optimization strategy is used to improve the thermoelectric performance of SnTe via modulating the electronic structure and phonon transport. The electrical transport of self‐compensated SnTe (that is, Sn_1.03Te) was first optimized by Ag doping, which resulted in an optimized carrier concentration. Subsequently, Mn doping in Sn_1.03?xAg_xTe resulted in highly converged valence bands, which improved the Seebeck coefficient. The energy gap between the light and heavy hole bands, i.e. ΔE_v decreases to 0.10 eV in Sn_0.83Ag_0.03Mn_0.17Te compared to the value of 0.35 eV in pristine SnTe. As a result, a high power factor of ca. 24.8 μW cm^?1 K^?2 at 816 K in Sn_0.83Ag_0.03Mn_0.17Te was attained. The lattice thermal conductivity of Sn_0.83Ag_0.03Mn_0.17Te reached to an ultralow value (ca. 0.3 W m^?1 K^?1) at 865 K, owing to the formation of Ag₇Te₄ nanoprecipitates in SnTe matrix. A high thermoelectric figure of merit (z T≈1.45 at 865 K) was obtained in Sn_0.83Ag_0.03Mn_0.17Te.     

Highly Converged Valence Bands and Ultralow Lattice Thermal Conductivity for High-Performance SnTe Thermoelectrics

A two-step optimization strategy is used to improve the thermoelectric performance of SnTe via modulating the electronic structure and phonon transport. The electrical transport of self-compensated SnTe (that is, Sn_1.03Te) was first optimized by Ag doping, which resulted in an optimized carrier concentration. Subsequently, Mn doping in Sn_1.03−xAg_xTe resulted in highly converged valence bands, which improved the Seebeck coefficient. The energy gap between the light and heavy hole bands, i.e. ΔE_v decreases to 0.10 eV in Sn_0.83Ag_0.03Mn_0.17Te compared to the value of 0.35 eV in pristine SnTe. As a result, a high power factor of ca. 24.8 μW cm⁻¹ K⁻² at 816 K in Sn_0.83Ag_0.03Mn_0.17Te was attained. The lattice thermal conductivity of Sn_0.83Ag_0.03Mn_0.17Te reached to an ultralow value (ca. 0.3 W m⁻¹ K⁻¹) at 865 K, owing to the formation of Ag₇Te₄ nanoprecipitates in SnTe matrix. A high thermoelectric figure of merit (z T≈1.45 at 865 K) was obtained in Sn_0.83Ag_0.03Mn_0.17Te.     

The luminescence of mercury-like ions in and the crystal structure of SrLaBO4

The crystal structure of SrLaBO₄ contains triangular borate groups. The luminescence of mercury-like ions (Sn²⁺, Sb³⁺, Tl⁺, Pb²⁺, Bi³⁺) in this host lattice is characterized by a large Stokes shift. The Pb²⁺ is a very efficient activator at room temperature. The luminescent properties are discussed in terms of earlier models related to an off-center position of the metal ion. The emission of Eu³⁺ shows that the crystal structure has a disordered nature and confirms an off-center position. Energy transfer from Pb²⁺ to Eu³⁺ and Tb³⁺ was studied and found to be inefficient.     

Structural and physical properties of the new intermetallic compound Yb3Pd2Sn2

The crystal structure of the ternary intermetallic compound Yb₃Pd₂Sn₂ has been determined ab initio from powder X-ray diffraction data. The compound crystallizes as a new structure type in the orthorhombic space group Pbcm and lattice constants a=0.58262(3), b=1.68393(8), c=1.38735(7) nm. Yb₃Pd₂Sn₂ is composed of a complex _∞[Pd₂Sn₂]^δ− polyanionic network in which the Yb ions are embedded. A comparison between this structure and those of Eu₃Pd₂Sn₂ and Ca₃Pd₂Sn₂, other novel polar intermetallic compounds, was made. DC susceptibility and ¹⁷⁰Yb Mössbauer spectroscopic measurements indicate a close-to divalent Yb behavior. Moreover, a hybridization between 4f and conduction electrons is suggested by electronic structure calculations and heat capacity measurements.