In situ investigation of synchrotron radiation damage effect of ancient paintings by time-resolved ED-XAS and IR combined techniques

Advanced synchrotron radiation light is a powerful tool for archaeometry research. However, its applications to precious cultural relics, especially for color painting, have been hindered to some degree due to potential X-ray radiation damage. Compared to inorganic mineral pigments, organic binders in the painting are easier to be damaged by synchrotron radiation X-ray beam. The radiation damage effect of two typical painting samples, pure rabbit skin glue and the mixed sample of rabbit skin glue and zinc white, has been investigated by in situ time-resolved ED-XAS and IR combined techniques. The results show that the radiation damage effect of pure rabbit skin glue is more serious at low X-ray energy (7775 eV). The radiation damage effect of the mixed sample increases significantly due to more X-ray absorption by inorganic pigments. Furthermore, the radiation damage is more serious at the energy near Zn K-edge and is somewhat slight at higher energy (13,054 eV). These damages are more obvious from the point of view of protein secondary structures. The irradiation damage effects increase more rapidly at the beginning and are not linear with the irradiating time. The results indicate that synchrotron radiation damage can be reduced effectively by using X-ray energy far away from the X-ray absorption edge of the major element in the pigments during XRF, XRD and CT experiments, or by using time-resolved techniques such as QXAFS and ED-XAS during XAFS experiments.     

1—4 MA电流驱动的丝阵X光辐射优化的实验研究

进行了1—4MA电流驱动的钨丝阵列负载的Z箍缩实验研究,通过丝阵参数、负载电极结构的优化设计及负载初始装配状态的控制优化X光辐射功率,在单、双层丝阵的内爆实验中分别获得5.3±1.0 TW和5.6±1.1 TW的峰值辐射功率,创同类装置上X光辐射功率的最高纪录. 关键词： Z箍缩')" href="#">Z箍缩 丝阵X光辐射 优化     

Effects of carbon doping on chemical states of amorphous Ge2Sb2Te5, measured with synchrotron radiation

We fabricated and analyzed the chemical states of carbon-doped (5.2–13.2 at.%) Ge₂Sb₂Te₅ thin films on Si substrates using high-resolution, X-ray photoelectron spectroscopy with synchrotron radiation. Thin films were completely amorphous and their phase-change temperature was 150 °C higher than for un-doped GST. As the carbon doping concentration increased, new chemical states of Ge 3d with 29.9 eV and C 1s with 283.7 eV core-levels were observed. The doped carbon was bonded only with Ge in GST and doping was saturated at 8.7 at.%.     

In situ synchrotron radiation topography of NaCI during high temperature creep

High temperature plastic deformation is associated with large changes in the microstructure of single crystals. To observe this microstructure during the creep test, we have performed X-ray reflection topography, taking advantage of the high intensity of the synchrotron radiation. A special creep machine was designed which permits in situ observation.

Creep tests and microstructural observations were performed on NaCl single crystals compressed along <100> at about 600°C. As soon as the deformation started, subgrains appeared within the crystal, independent of the initial microstructure. Migration of the subboundaries during transient creep is followed by stabilization during steady state creep where a well developed subgrain structure keeps constant while new appearing subboundaries migrate. Misorientation between sub-grains increases progressively although more slowly in the steady state creep. A correlation between the microstructure evolution and the changes in the creep curves has been attempted.     

Energy-filtered XPEEM with NanoESCA using synchrotron and laboratory X-ray sources: Principles and first demonstrated results

The importance of energy filtering in PEEM-based imaging methods has been shown in recent years with the availability of powerful instruments. A new instrument, the NanoESCA, combines a fully electrostatic PEEM column and an aberration corrected double hemispherical analyser as energy filter. This paper reports on recently demonstrated XPEEM results using the first commercially available NanoESCA instrument operated with both synchrotron soft X-rays and monochromatic laboratory Al Kα radiation. The implementation of elemental and bonding-state specific imaging is shown with both excitation sources. The presently achieved (but not yet ultimate) lateral resolutions on energy filtered core-level images are 150 nm with a large synchrotron spot and below 1 μm with a focused laboratory source. To date this is the unique example of laboratory XPEEM core-level imaging.     

Ionizing radiation effects on electrical and reliability characteristics of sputtered Ta2O5/Si interface

This paper describes the effect of ionizing radiation on the interface properties of Al/Ta₂O₅/Si metal oxide semiconductor (MOS) capacitors using capacitance–voltage (C–V) and current–voltage (I–V) characteristics. The devices were irradiated with X-rays at different doses ranging from 100?rad to 1?Mrad. The leakage behavior, which is an important parameter for memory applications of Al/Ta₂O₅/Si MOS capacitors, along with interface properties such as effective oxide charges and interface trap density with and without irradiation has been investigated. Lower accumulation capacitance and shift in flat band voltage toward negative value were observed in annealed devices after exposure to radiation. The increase in interfacial oxide layer thickness after irradiation was confirmed by Rutherford Back Scattering measurement. The effect of post-deposition annealing on the electrical behavior of Ta₂O₅ MOS capacitors was also investigated. Improved electrical and interface properties were obtained for samples deposited in N₂ ambient. The density of interface trap states (D_it) at Ta₂O₅/Si interface sputtered in pure argon ambient was higher compared to samples reactively sputtered in nitrogen-containing plasma. Our results show that reactive sputtering in nitrogen-containing plasma is a promising approach to improve the radiation hardness of Ta₂O₅/Si MOS devices.