GaInAsP/InP double-heterostructure lasers for fiber odtic communications

This paper reviews the performance of GaInAsP/InP double-heterostructure diode lasers prepared by liquid-phase epitaxy. These lasers have the advantage that exact lattice-matching between the GaIn-ASP active region and the InP substrate is possible for quaternary alloy compositions giving emission wavelengths over a range that includes 1.1-1.3 μm, the optimum region for optical communication systems utilizing fused silica fibers. Continuous operation at room temperature has been achieved in this region for proton-defined stripe (PDS), oxide-defined stripe (ODs), and junction-defined, buried-stripe (JDBS) lasers. The first three PDS devices to be life-tested have already logged over 6,000, 5,700, and 4,000 h, respectively, of cw operation at room temperature without any degradation.     

GaInAsP/InP double-heterostructure lasers for fiber odtic communications

Abstract

This paper reviews the performance of GaInAsP/InP double-heterostructure diode lasers prepared by liquid-phase epitaxy. These lasers have the advantage that exact lattice-matching between the GaIn-ASP active region and the InP substrate is possible for quaternary alloy compositions giving emission wavelengths over a range that includes 1.1–1.3 μm, the optimum region for optical communication systems utilizing fused silica fibers. Continuous operation at room temperature has been achieved in this region for proton-defined stripe (PDS), oxide-defined stripe (ODs), and junction-defined, buried-stripe (JDBS) lasers. The first three PDS devices to be life-tested have already logged over 6,000, 5,700, and 4,000 h, respectively, of cw operation at room temperature without any degradation.     

Low threshold current proton-isolated (GaAl)As double heterostructure lasers

Very low threshold current laser sources are desirable for a number of potential applications including optical fibre telecommunications systems. Conventional proton-isolated stripe geometry (GaAl)As lasers can be designed to give threshold currents in the range 10–50 mA by proper optimization of device geometry. Experimentally, it is shown that such devices can be easily fabricated and bonded and that their characteristics are not adversely affected by the optimization procedure.     

Stable high optical power in quantum well lasers with profiled reflection and tapered structures

A comprehensive model is presented to study quantum well tapered lasers and quantum well stripe lasers with profiled reflectivity output facets and to obtain lateral stability in high power semiconductor laser. Simulation of semiconductor lasers is performed by numerically solving space-dependent coupled partial differential equations for the complex optical forward and backward waves, carrier density distribution and temperature distribution. The coupled equations are solved by finite difference beam propagation method. The effect of nonlinear parameters like Kerr and linewidth enhancement factors, and precise dependence of linewidth enhancement factor and gain factor on the carrier density and temperature are considered in this paper. We use modal reflector in stripe lasers to confine the lateral mode to the stripe centre and provide the stable operation. We also use unpumped window to reduce the facet temperature and improve the catastrophic optical mirror damage level of tapered lasers.     

GalnAsP-InP double-heterostructure lasers

GaInAsP-InP double-heterostructure lasers which are the most promising optical sources for the long wavelength region have been investigated. In the crystal growth, it was found that the liquidus and solidus isotherms are affected by the orientation of InP source and substrate crystals in the liquid phase epitaxial growth of GaInAsP alloys. The unit cell of the GaInAsP epitaxial layer is tetragonally deformed due to the interface lattice misfit such that the lattice constant parallel to the wafer surface is invariant across the interfaces in the GaInAsP-InP wafers. Two kinds of stripe lasers, planar stripe and buried lasers, have been fabricated by use of GaInAsP cap layer for good p-type contact. The planar stripe lasers of 10,15 and 20 m wide stripe operated in fundamental-transverse mode with 20–30% differential external efficiencies per facet. The 15 m wide stripe laser showed good mode characteristics to operate in a fundamental-transverse mode up to the cw output power of 22 mW per facet and in a single longitudinal mode over a wide range of currents. The buried stripe laser operated in a fundamental-transverse mode with the threshold current as low as 30 mA by making the stripe width narrower than 2 (m. The laser succeeded in cw operation at 100 °C because of its low threshold current and low thermal resistance.The authors would like to thank K. Noda, N. Kuroyanagi and Y. Furukawa for their encouragement. Thanks are also due to H. Kano for permission to use his results of buried stripe lasers prior to publication, and S. Ando for his technical assistance.     

A nonlinear circuit model for studying the frequency response in buried heterostructure lasers

An equivalent-circuit model of a semiconductor laser is developed. The model includes diffusion and uses the parabolic gain approximation. It can be applied to various buried heterostructure (BH) devices to simulate optical response characteristics. The values of the circuit elements versus injection current clearly indicate that the parabolic gain approximation and carrier diffusion play an important role in obtaining a more accurate frequency response, especially for (BH) lasers with stripe widths greater than the diffusion length.     

Multiple air-gap filters and constricted mesa lasers – material processing meets the front of optical device technology

Real three-dimensional material structures enable enormous perspectives in the functionality of advanced electronic and optoelectronic III/V semiconductor devices. We report on the technological implementation of surface-micromachined III/V semiconductor devices for optoelectronic applications. Considering fabrication technology, the general principles can be reduced to three fundamental process steps: deposition of a layered heterostructure on a substrate, vertical structurization and horizontal undercutting by selectively removing sacrificial layers. Very useful quality-control elements for precise process control are presented. The basic principles are applied and illustrated in detail by presenting two selected optoelectronic examples. (i) The fabrication technology of buried mushroom stripe lasers is shown. Bent waveguides on homogeneous grating fields are used to obtain chirped gratings, enabling a high potential to tailor specific performances. Excellent optical properties are obtained. (ii) The fabrication technology of vertical optical cavity based tunable single- or multi-membrane devices including air gaps is shown. Record optical tuning characteristics for vertical cavity Fabry–Pérot filters are presented. Single parametric wavelength tuning over 142 nm with an actuation voltage of only 3.2 V is demonstrated. PACS 85.60.-q; 87.80.Mj; 68.65.Ac     

增益导引锁相列阵激光器实验及波导分析

用液相外延方法制做了十五个氧化物条形半导体激光器集成在一起的耦合多条形激光器,实现了锁相工作,脉冲峰值功率为4W/plane(300ns,5kHz).在对单条形激光器的模式特性完成数值分析的基础上,运用耦合模理论,对耦合多条形激光器的波导特性进行了数值分析和计算,计算结果和实验基本一致.     

条形DH半导体激光器高频调制光输出的频率锁定、准周期、分岔和混沌

本文从解光场方程和载流子浓度以及光子密度速率方程的自洽解出发,研究条形DH半导体激光器高频调制下光输出的频率锁定、准周期、分岔和混沌现象。结果表明,不稳定的条形半导体激光器可能出现混沌的光输出;其通向混沌的途径是准周期到混沌。所得结果与实验符合得很好,并澄清了当前理论中的混乱之处。     

Complete-single-mode operation of 180° mode phased array lasers by improving temperature distribution inside the stripe region

180° mode phased array lasers with multiple stripes were systematically investigated for high-power, single lateral mode operation. Phased array lasers with a conventional loss guide structure were fabricated for 180° mode operation because the structure allowed the threshold gain of 180° mode to become smallest by introducing optical loss between stripes and outside the stripe region. It showed complete single lateral mode operation under pulsed condition. However, under continuous wave operation, phase-uncoupling occurred at the edge emitters as a result of the temperature distribution inside the stripe region. This was confirmed both experimentally and theoretically. To minimise the temperature distribution, dummy stripes were introduced outside the stripe region. The current in the dummy stripes did not cause lasing, but did increase the temperature of the edge stripes, which improved the thermal distribution inside the stripe region. As a result, complete single lateral 180° mode operation under continuous wave operation was attained.     

InGaAs/InGaAlAs Strain-compensated Multiple-quantum-well Lasers with Improved Temperature Characteristic

1Intr0ductionSendconductorquanturnwe1l(QW)laserdiodeswokinginthelDngwavelength..reqamll.e.,around1.3mpand1.5pm,arevitalunitSintodny'sfibertaedcatdriSysterns.Moroftenusedmaterial,asdescribedinenormouspublicati0nS,istheInGaAsInPSystem.Anotherfrequenilyad0Ptedmaterial,whichisqulteprondsingandattractive,istheInG~InPsystem.ThesetwokindsofmaterialaredrilarinmanyaspectS:theyhavebasicallysarnbandgaPstructure,carriereffectivemassandrefractiveindexparameters.Themaindifferenceliesintheband0ffSet…     

InGaAs/InGaAlAs Strain-compensated Multiple-quantum-well Lasers with Improved Temperature Characteristic

It is reported on realization of pulsed operation of InGaAs/InGaAlAs strain-compensated multiple-quantum-well lasers at room temperatures. The working wavelength is 1.56 μm;the threshold current density for the stripe waveguide lasers is less than 1.85 kA/cm2;for the ridge waveguide lasers,the threshold current is 35 mA. The incorporation of compensated strain,which makes the multiple-quantum-well design applicable,leads to an obvious improvement on device temperature characteristic.     

Modeling and experimental study of 780–808-nm AlGaAs/GaAs injection lasers with electron superlattice barriers

Electron superlattice barriers (ESBs) were used in AlGaAs/GaAs injection lasers to improve the electron confinement of the active layer by Bragg reflection of electron waves. The design of a separate-confinement heterostructure (SCH) laser with ESBs operating at 780–808 nm was optimized. Conventional SCH and SCH-ESB were prepared by low-pressure MOCVD epitaxy. Oxide stripe lasers with stripe widths of 100 and 200µm were prepared. The threshold current density of 0.3 kA/cm² and the characteristic temperature constantT ₀=220 K were measured at a wavelength of 808 nm for SCH-ESB lasers with an active-layer thickness of 40 nm and a resonator length of 0.4–0.5 mm. For conventional SCH lasers with the same geometry, a threshold current density of 0.42 kA/cm² andT ₀=160 K were obtained. Experimental results on the low-temperature photoluminescence characterizing ESB regions are presented and are compared with the calculated miniband energy spectrum of the superlattice structure. The leakage currents for ordinary SCH and SCH-ESB lasers were analyzed. Experimental verification of a reduction in the leakage current for SCH-ESB lasers was obtained.     

Analysis of closely-spaced index-guided semiconductor lasers. II. Single-stripe channel-guide structures

Calculations of the properties of double-channel injection lasers are presented. The dependence of the device characteristics upon a number of material parameters is found. Near-field and carrier concentration profiles are compared for devices of different dimensions at two output power values.     

Self-pulsing phenomena in (GaAl) as double-heterostructure injection lasers

Repetitive self-pulsations under CW operation in the frequency range of 200 MHz–2 GHz are observed in many (GaAl)As double-heterostructure injection lasers. About 100 lasers of both low-mesa stripe geometry and with proton-implanted structures have been studied and about half of them exhibited more or less pronounced self-induced pulsations. The experimental results on three typical lasers are discussed more in detail on the basis of existing theories. Self-induced pulsations have often been observed in the non-linear region of the laser light output characteristic. The most probable reason for the instabilities appears to be a repetitive Q-switching process.     

有源-吸收分段式脊型波导半导体激光器的光双稳激射特性

本文报道了一种脊型波导有源-吸收分段结构半导体激光器中的光双稳输出特性的实验研究结果及其理论分析.给出了实验中发现的获取最大光滞回线宽度(Hysterisis)、所对应的器件结构参数以及电注入水平.此外,一种光线近似理论模型被采用来求解光输出特性从而得到了与实验近似一致的结果.     

Near- and far-field emission distributions of mesa stripe geometry double heterostructure lasers

Mesa stripe geometry double heterostructure lasers have been made with cavity widths down to 16 μm. The lowest threshold current values are down to 75 mA but more typical values are 110 mA, and the slope efficiencies are typically 40%. Measurements of near- and far-field distributions have shown that the problem of high order mode structure parallel to the junction is not as serious as expected although emission is normally in the lowest order only for very low drive currents. Improved mode control is demonstrated by a hybrid mesa-contact stripe geometry device which gave a pulse power output of 30 mW in the lowest order mode at a drive current of 310 mA.     

Optical Gain of 1550-nm Range Multiple-Quantum-Well Heterostructures and Limiting Modulation Frequencies of Vertical-Cavity Surface-Emitting Lasers Based on Them

Results of investigation of 1550 nm range stripe semiconductor lasers fabricated from heterostructures with different designs of the gain medium are presented. It is shown that the proposed designs of the gain medium allow obtaining the effective lasing at high level of total optical losses, comparable with the typical optical losses in the vertical-cavity surface-emitting lasers. The evaluation of modal gain in different types of the gain mediummade it possible to estimate the possible frequencies of the small-signal modulation of vertically emitting lasers and proposed the ways to increase them up to 20 GHz or more.     

Generalised multiple-lateral-mode rate equation modelling of lasers with selective quantum-well intermixing for improved beam quality

A numerical model in terms of rate equations for lateral mode amplitudes for analysing static and dynamic properties of moderately broad stripe (tens of microns) laser diodes is proposed and used for modeling lasers with longitudinally or laterally intermixed passive areas. Introduction of passive diffractive regions is shown to offer some improvement of the laser beam, and the potential of further improvement of the beam by Intermixing lateral fringes along the stripe is discussed.     

条形半导体激光器光束质量因子M2的理论计算

通过一个二维半矢量模型求得纯折射率导引脊形波导和掩埋波导这两种常见平面条形半导体激光器波导结构的模式光场分布，现通过描述光束传播的非傍轴矢量二阶矩，通过平面波谱的方法获得激光器出射光束在横向和侧向上的束腰、远场发散角和M^2因子。讨论了波导结构参量变化对M^2因子的影响，并对两种波导结构光束的性质与波导参量的关系进行了比较。