Kinetics and mechanisms of surface reactions in epitaxial growth of Si from SiH4 and Si2H6

Surface science and kinetic modelling studies of the surface chemical mechanisms active during low pressure chemical vapor deposition (CVD) and chemical beam epitaxy (CBE) growth of Si from mono- and disilane are summarized. Time-of-flight direct recoiling (DR) is discussed as an in situ method to analyze the composition of the growth interface. Steady state measurements of surface hydrogen coverage (θ_H) are made by DR in situ during CBE Si growth from Si₂H₆ and SiH₄, and are illustrated here. Key results using other experimental methods are briefly discussed.     

TiO2-SiO2 monolithic glass formation from sol-gel

This study demonstrates that hydrolysis should be carried out in a step manner in gel synthesis. The key to the increase in the amount of water added is the control of the hydrolysis rate of Ti(OC₄H₉)₄. The hydrolysis of Si(OC₂H₅)₄ can be carried out at about 75°C. The amount of added water (γ_WI), which varied with TiO₂ content (in mol%), was about 64–88% of the total amount of added water. The hydrolysis reaction should be performed at room temperature while Ti(OC₄H₉)₄ is added. The total amount of added water (γ_W) is related to the amount of solvent (R). For example, if TiO₂ is 40mol%, γ_W will vary from 3.2 to 8.0 when R varies from 0.8 to 2.0. The amount of added water was affected by the distribution of solvent in the metal alkoxides. The amount of added water can be increased when R_Si(OC2H5)4 = 1, R_Ti(OC4H9)4 > 1. The rate of rise in temperature of the thermolysis of the dried gel should be less than 10°C per hour, and the heat treatment temperatyre is related to the TiO₂ content (in mol%). Gel glasses without devitrification can only be obtained by thermolysis at 600°C from the gel with no less than 20 mol% TiO₂.     

Silicate groupings in glassy and crystalline 2PbO·SiO2

The type and the amount of silicate groupings existing in glassy and crystalline 2PbO·SiO₂ have been determined by direct chemical methods: paper chromatography, trimethylsilylation combined with gas-liquid partition chromatography and by the molybdate method. The results obtained by these three different methods are in good agreement and demonstrate, that glassy 2PbO·SiO₂ and each of the three main crystalline polymorphs are characterized by its own specific silicate anion distribution: the distribution in vitreous 2PbO·SiO₂ is of a polyanionic nature; in T---Pb₂SiO₄ dimetic groups [Si₂O₇]⁶⁻ prevail; M₁---Pb₂SiO₄ contains predominantly [Si₄O₁₂]⁸⁻ rings and H---Pb₂SiO₄ is a typical polysilicate with chain anions [SiO₃²⁻]_n. The results fit a structural model according to which glass is a random array of discrete polyatomic groupings; the gradual transition from the glassy state to the stablest crystalline structure is connected with degradation and polymerization of silicate anions.     

Optimal crystal growth conditions of thin films of Bi2Te3 semiconductors

Crystal growth conditions of Bi₂Te₃ narrow bandgap semiconductors have been studied using molecular beam epitaxy method. It was applied to the growth of Bi₂Te₃ on Bridgman single-crystal substrate Sb₂Te₃. Substrate ingots were taken from the natural cleavage along the (0001) plane. The deposited conditions have been studied as a function of substrate temperature (T_s) and flux ratio (F_R=F(Te)/F(Bi)). The quality of deposited layers was controlled by X-ray diffraction, scanning electron microscope (SEM), secondary ion mass spectroscopy (SIMS) depth profiling and energy-dispersive X-ray (EDX) microanalyser. The sticking coefficients K_s(Te) and K_s(Bi) of the elements that compose Bi₂Te₃ were determined. It was found that the stoichiometry of deposited layers depended on substrate temperature and flux ratio. It was observed that all deposited layers were single-crystal in the orientation of their substrates with a small shift due to the stress in layer.     

Growth by self-flux method and post-annealing effect of Bi2Sr2Ca1Cu2Ox single crystals

Post-annealing effects on superconducting characteristics have been studied in Bi₂Sr₂Ca₁Cu₂O_x single crystals grown by a conventional flux method. Also, favorable growth conditions and the effect of the pre-sintering process on the starting materials for flux growth have been examined. The best superconducting behavior is obtained in post-annealed crystals grown from pre-sintered powder materials. The critical current density J_c estimated from magnetization hysteresis in annealed crystals grown with pre-sintered materials is roughly 8×10⁵ A/cm² (Hc) and 5×10⁴ A/cm² (Hc) at 4.2 K at zero field.     

Multilayer SiO2 and TiO2 coatings on glasses by the sol-gel process

Glass films of pure SiO₂ and TiO₂ have been prepared on sodalime silica flat slide glasses by the sol-gel process using the dip-coating technique from TEOS and Ti(OC₃H₇)₄ solutions. The various parameters such as chemicals concentrations, viscosity, type of catalyst, withdrawal speed and temperature of densification leading to the obtention of good and adherent coatings with definite film thicknesses are reported. The same technique has been used for the depositon of layers of colored films SiO₂---M_xO_y (M = Co, Mn, Nd and Cr). Brilliant yellow coatings have been obtained with TiO₂---CeO₂.     

Hydrolysis and condensation reactions of Si(OC2H5)4 related to silica fiber drawing

The hydrolysis and condensation reactions of Si(OC₂H₅)₄ (TEOS) at 80°C in the TEOS---H₂O---C₂H₅OH---HCl solutions with H₂O/TEOS molar ratios (r) from 1.0 to 2.0 were followed by gas chromatography (GC) and measurement of molecular weight ( ) of the hydrolyzates, in order to explain the viscosity change of the solutions. It has been found that the siloxane oligomers with average polymerization degree (n) from 2 to 7 are formed in the early stage of reaction and undergo condensation to form higher polymers. The n and the number of silanol groups of the oligomers are increased with increasing r. The fact that the solution viscosity increased once rapidly around the so-called gelation point followed by a sluggish increase with the increase of reaction time for an r of 1.7, while it increased rapidly without a break till gelation for an r of 2.0, was attributed to fewer silanol groups and higher steric hindrance as a result of more −OC₂H₅ groups remaining in the oligomers for an r of 1.7.     

Formation of oxygen-deficient type structural defects and state of ions in SiO2 glasses implanted with transition metal ions

The properties and concentrations of oxygen-deficient type structural defects in type III SiO₂ glasses implanted with Ti⁺, Cr⁺, Mn⁺, Fe⁺, or Cu⁺ to doses from 0.5×10¹⁶ to 6×100¹⁶ ions/cm² at an energy of 160 keV have been measured by using vacuum UV and EPR spectroscopies. An intense absorption band centered around 7.5 eV is observed in all the samples except for Cu-implanted ones and is attributed primarily to Si---Si homo-bonds with the bond distance close to that of the Si₂H₆ molecule. The homo-bond and implanted ion concentrations are of the same order of magnitude in the implanted layers. An E′ type center associated with the homo-bond is observed in all the samples except for Cu-implanted ones. Anomalous behaviors of the Cu-implanted samples are attributed to the formation of Cu-colloids. An enhanced formation of metallic particles or colloids is suggested for the samples implanted with Cr, Mn or Fe to doses higher than 3×10¹⁶ ions/cm².     

Low temperature synthesis of monolithic silica glass from the system Si(OC2H5)4---H2O---HCl---HOCH2CH2OH by the sol-gel method

To avoid breaking of the gel during drying any organic solvent such as ethanol has not been used. When the amount of HCl is increased and the mixture is stirred vigorously, a transparent silica sol can be prepared immediately with only Si(OC₂H₅)₄ and H₂O. By adjusting the amount of HCl and the temperature, the sol may gel at any time, even in 5 min at room temperature. Such a gel may be dried without cracking under completely open conditions. The addition of glycol as a complex agent can apparently increase the pore size of the gel and decrease its capillary force and surface tension. So, large dried gels can be made in a rather short time. For example, a dried gel of diameter 68 mm and thickness 13 mm can be made in only 4 days. Because of the large pores, the dried gels can be sintered to monolithic silica glasses of practical size with a rather fast heating rate. The mechanisms in the whole process have been explored.     

Effect of Si3N4 on chemical durability of chalcogenide glass

Chemical durability of the Si₃N₄ doped (up to 0.5 wt%) chalconitride glasses was evaluated by weight losses of glass samples after immersion in deionized water, H₂SO₄, HCl and NaOH solutions. IR spectra and SEM were used as an aid to examine the surface structure of corroded glass samples. Weight loss measurements showed a poorer stability of non-oxide glasses in basic solution than in acid solution, and the Si₃N₄ doping was found to improve chemical durability. Comparison of IR spectra of samples exposed to the basic solution with their original ones suggested the higher content of OH⁻ in its reaction layers, indicating that the corrosion of the present non-oxide glasses in the basic solution may result from the breakdown of the bridging Se due to an attack launched by OH⁻. The SEM evidence confirmed that Si₃N₄ doping did hinder the OH⁻ attacks on Ge and/or As, which is most likely related to incorporation of the three-coordinated N into the glass network, as supported by a comparison of the IR transmitting spectrum between uncorroded chalconitride glass and undoped chalcogenide glass.     

Electronic traps in mixed Si1−xGexO2 films

Thermally stimulated luminescence (TSL) and infrared (IR) spectroscopy were measured in plasma grown Si_1−xGe_xO₂ (x=0, 0.08, 0.15, 0.25, 0.5) with different thicknesses (12–40 nm). A comparison with the TSL properties of thermally grown SiO₂ and GeO₂ was also performed. A main IR absorption structure was detected, due to the superposition of the peaks related to the asymmetric O stretching modes of (i) Si–O–Si (at ≈1060 cm⁻¹) and (ii) Si–O–Ge (at 1001 cm⁻¹). Another peak at ≈860 cm⁻¹ was observed only for Ge concentrations, x>0.15, corresponding to the asymmetric O stretching mode in Ge–O–Ge bonds. A TSL peak was observed at 70°C, and a smaller structure at around 200°C. The 70°C peak was more intense in all Ge rich layers than in plasma grown SiO₂. Based on the thickness dependence of the signal intensity we propose that at Ge concentrations 0.25x0.5 TSL active defects are localised at interfacial regions (oxide/semiconductor, Ge poor/Ge rich internal interface, oxide external surface/atmosphere). Based on similarities between TSL glow curves in plasma grown Si_1−xGe_xO₂, thermally grown GeO₂ and SiO₂ we propose that oxygen vacancy related defects are trapping states in Si_1−xGe_xO₂ and GeO₂.     

RHEED studies of the growth of Si(001) by gas source MBE from disilane

The growth of Si(001) from a gas source molecular beam epitaxy system (Si-GSMBE) using disilane (Si₂H₆) was investigated using reflection high-energy electron diffraction (RHEED). The surface reconstructions occurring between 100 and 775°C were studied as a function of both substrate temperature and surface coverage. We report the first observation of (2x2) and c(4x4) reconstructions during growth at substrate temperatures near 645°C using Si₂H₆. All growth was found to be initiated by the formation of three-dimensional (3D) islands which coalesced at substrate temperatures above 600°C. The surface reconstruction was found to change from a disordered to an ordered (2x1)+(1x2) structure at 775°C via intermediate (2x2) and c(4x4) phases. Thereafter, growth was found to proceed in a 2D layer-by-layer fashion, as evidenced by the observation of RHEED intensity oscillations. This technique has been used, for the first time, to calibrate growth rates during Si-GSMBE. The intensity oscillations were measured as a function of both substrate temperature and incident beam flux. Strong and damped oscillations were observed between 610 and 680°C, in the two-dimensional growth regime. At higher temperatures, growth by step propagation dominated while at lower temperatures, growth became increasingly three-dimensional and consequently oscillations were weak or absent. Similarly, there was a minimum flux limit ( <0.16 SCCM), below which no oscillations were recorded.     

Ambient-condition growth of superconducting YBa2Cu4O8 single crystals using KOH flux

YBa₂Cu₄O₈ is a stoichiometric oxide superconductor of T_c80 K. Unlike YBa₂Cu₃O_7−δ, this compound is free from oxygen vacancy or twin formation and does not have any microscopic disorder in the crystal. Doping with Ca raises its T_c to 90 K. The compound is a promising superconductor for technological application. Up to now, single crystals have not been grown without using specialized apparatus with extremely high oxygen pressure up to 3000 bar and at over 1100 °C due to the limited range of reaction kinetics of the compound. This fact has delayed the progress in the study of its physical properties and potential applications. We present here a simple growth method using KOH as flux that acts effectively for obtaining high-quality single crystals in air/oxygen at the temperature as low as 550 °C. As-grown crystals can readily be separated from the flux and exhibit a perfect orthorhombic morphology with sizes up to 0.7×0.4×0.2 mm³. Our results are reproducible and suggest that the crystals can be grown using a conventional flux method under ambient condition.     

A comparative study of GaAs- and InP-based HBT growth by means of LP-MOVPE using conventional and non gaseous sources

Low-pressure metalorganic vapor phase epitaxy (LP-MOVPE) growth of carbon doped (InGa)P/GaAs and InP/(InGa)As heterojunction bipolar transistors (HBT) is presented using a non-gaseous source (ngs-) process. Liquid precursors TBAs/TBP for the group-V and DitBuSi/CBr₄ for the group-IV dopant sources are compared to the conventional hydrides AsH₃/PH₃ and dopant sources Si₂H₆/CCl₄ while using TMIn/TEGa in both cases. The thermal decomposition of the non gaseous sources fits much better to the need of low temperature growth for the application of carbon doped HBT. The doping behavior using DitBuSi/CBr₄ is studied by van der Pauw Hall measurements and will be compared to the results using Si₂H₆/CCl₄. Detailed high resolution X-ray diffraction (HRXRD) analysis based on 004 and 002 reflection measurements supported by simulations using BEDE RADS simulator enable a non-destructive layer stack characterization. InGaP/GaAs HBT structures designed for rf-applications are grown at a constant growth temperature of T_gr=600°C and at a constant V/III-ratio of 10 for all GaAs layers. P-type carbon concentrations up to P = 5·10¹⁹cm⁻³ and n-type doping concentrations up to N = 7·10¹⁸cm⁻³ are achieved. The non self-aligned devices (A_E = 3·10 μm²)_show excellent performance, like a dc-current gain of B_max = 80, a turn on voltage of V_offset = 110 mV (Breakdown Voltage V_CEBr,0 > 10 V), and radio frequency properties of f_T/f_max = 65 GHz/59 GHz.

In the non-gaseous source configuration the strong reduction in the differences of V/III-ratios and temperatures during HBT structure growth enable easier LP-MOVPE process control. This is also found for the growth InP/InGaAs HBT where a high dc-current gain and high transit frequency of f_T= 120 GHz are achieved.     

Crystal growth of NdAl3(BO3)4 from K2O/MoO3/Nd2O3/B2O3/KF flux

NdAl₃(BO₃)₄ single crystals were grown by the flux method and the TSSG technique using a K₂O/3MoO₃/B₂O₃/0.5Nd₂O₃/KF flux system. Light-violet clear crystals could be obtained. The effects of fluoride on the growth of NAB crystals were investigated. As the content of KF was gradually increased, the growth form of NAB was changed from the equant to the columnar and the primary crystalline region of NAB was shrinked. At the ratio of KF/K₂O = 0.75, NAB crystals could not be grown.     

Oscillation of Y2BaCuO5 particle concentration in the melt-grown YBaCuO bulk superconductors

The oscillation of Y₂BaCuO₅ (2 1 1) particle concentration in form of bands parallel to the growth front was observed in top-seeded melt-grown (TSMG) single-grain YBa₂Cu₃O₇/Y₂BaCuO₅ bulk superconductors. The formations of these bands have been associated with temperature fluctuations at the growth front, which induce the fluctuation of the growth rate of the YBa₂Cu₃O₇ (123) crystal and consequently also the fluctuation of the amount of trapped 211 particles. We have shown that the oscillation of 211-particle concentration does not occur when the growth front is horizontal and the crystal solidifies from below upwards. In the a-growth sector (a-GS) the oscillation was observed only in the nests with very small 211 particles.     

Magnesium-doped InGaAs using (C2H5C5H4)2Mg: application to InP-based HBTs

Heavily magnesium-doped p-type-InGaAs layers on InP(100) substrates were successfully grown, for the first time, by low-pressure metalorganic chemical vapor deposition (MOCVD) using bis-ethylcyclopentadienyl-magnesium, (C₂H₅C₅H₄)₂Mg (EtCp₂Mg), as organometallic precursor for the Mg. It was experimentally verified that the room-temperature hole concentration of Mg into InGaAs increased with increase of the V/III ratio and decrease of the growth temperature. A maximum hole concentration of over 4 × 10¹⁹ cm⁻³ was obtained. The diffusion coefficient of Mg in InGaAs was experimentally derived to be 10⁻¹² cm²/s at 800°C, which was comparable to that of Be. Finally, InP/InGaAs heterojunction bipolar transistors (HBTs) with Mg-doped bases were fabricated successfully. Measured maximum current gain was about 320 with a 90 nm thick base and a sheet resistance of the base layer of 1.28 kΩ/sq.     

Czochralski grown Ga2O3 crystals

We report on the successful growth of β-Ga₂O₃ single crystals using the Czochralski method. Model calculations show that the gas phase consists of Ga₂O, GaO or Ga independent of the ratio of oxygen and Ar or N₂. We find that for growing single crystals the evaporation has to be suppressed by a finite amount of oxygen. A CO₂/Ar gas atmosphere was found to meet this requirement.     

New dopant precursors for n-type and p-type GaN

Tetraethylsilane (TeESi) and bis(ethylcyclopentadienyl)Mg (ECp₂Mg) were employed as Si and Mg dopant precursors for MOVPE growth of n-type and p-type GaN films, respectively. In Si doping, the electron concentration was observed to increase with the increase of the TeESi flow rate. The temperature dependence of the Hall mobility showed good agreement with n-type GaN films grown using different dopant precursors (SiH₄, GeH₄, Si₂H₆). The donor activation energy was estimated to be 27 meV, which is almost the same as the literature values. In Mg doping, we also found that the Mg concentration increases as the ECp₂Mg flow rate increases. All of Mg-doped samples in this study showed p-type conduction after annealing. The acceptor activation energy was estimated to be 170 meV, which was close to the reported values.     

Toughened glass-ceramics containing ZrO2 and Al2O3 prepared by the sol-gel process from metal alkoxides

Glasses of compositions 5ZrO₂·5SiO₂(ZS), 5ZrO₂·Al₂O₃·4SiO₂(ZAS) and 5 5ZrO₂·0.5Al₂O₃·0.5Na₂O·4SiO₂(ZANS) were prepared by the sol-gel process from metal alkoxides and sintered to make glass-ceramics. Tetragonal ZrO₂ was precipitated by heat treatment at 900 to 1300°C. The activation energy for tetragonal ZrO₂ crystal growth was extremely high in Al₂O₃ containing glasses. ZAS and ZS were sintered to the near theoretical densities above 1200°C, at which the predominant phase was tetragonal ZrO₂. On the other hand, for ZANS, high densification was not attained owing to the large pores enclosed by the glass phase. Strength and fracture toughness increased with the densification and the crystal growth of tetragonal ZrO₂, reaching 450 MPa and 9 MN/m^1.5, respectively.