Ag/La0.67Ca0.33MnO3/p+-Si三明治结构器件的电致阻变性能研究

采用溶胶-凝胶工艺在p+-Si基片上制备了La0.67Ca0.33Mn O3薄膜,构建了Ag/La0.67Ca0.33Mn O3/p+-Si三明治结构的阻变器件,研究了器件的电致阻变性能。结果表明:Ag/La0.67Ca0.33Mn O3/p+-Si器件具有明显的双极性阻变特性,其高阻态(HRS)与低阻态(LRS)比(HRS/LRS)高于104,器件在高阻态和低阻态的电荷传导机制分别遵循Schottky势垒导电机制与空间电荷限制电流机制(SCLC)。器件在2×103次可逆循环测试下,高、低阻态比无明显变化,表现出良好的抗疲劳特性。根据器件的高、低阻态阻抗谱,可以得到阻变效应是由器件界面的肖特基势垒的改变与器件内部缺陷填充共同作用的。     

溶胶浓度对Ag/Mgo.2Zn0.8O/ITO阻变异质结性能的影响研究

采用溶胶-凝胶法制备了Ag/Mg0.2Zn0.8O/ITO异质结,研究了溶胶浓度对Mg0.2Zn0.8O薄膜生长行为、阻变性能和疲劳特性等的影响.研究表明:Mg0.2Zn0.8O为多晶薄膜,平整致密,且随溶胶浓度的增加结晶度逐步增强,但溶胶浓度过大会导致裂纹产生.阻变行为表明,随着溶胶浓度的增加,Vsct电压逐渐升高,高阻态的阻值(RHRS)逐渐下降,低阻态的阻值(RLRS)无明显变化,RHRs/ RLRS和无疲劳循环次数逐渐降低.不同溶胶浓度所制备Ag/Mg0.2Zn0.8O/ITO异质结遵循相同的导电机制,但低压区域遵循欧姆传导机制的范围有所不同,浓度为0.3 mol/L的薄膜具有较好的综合性能,其Vset低至1.2V、无疲劳循环次数达到230次、RHRs/ RLRS大于10.     

电场调控Pt/Co∶ZnO/Nb∶SrTiO3异质结阻变与磁性研究

利用脉冲激光沉积法在0.7; Nb∶ SrTiO3衬底上制备了Co∶ ZnO薄膜,并构建了Pt/Co∶ ZnO/Nb∶ SrTiO3异质结器件.该器件表现出典型的双极性阻变效应,在正、负向电压作用下,器件电阻可以在低阻态和高阻态之间变换,电阻变换比值可达到104,阻态具有一定的保持性与耐久性,同时Co∶ ZnO薄膜的饱和磁化强度会产生与阻变相关联的可逆调控.结合ZnO薄膜阻变与磁性调控结果发现,氧空位在Co∶ ZnO/Nb∶ SrTiO3异质结的阻变及磁性调控中具有重要作用,并采用氧空位产生与湮灭结合载流子注入-束缚/解束缚模型解释阻变与磁性调控.     

低限流下含Ag电极的BiFeO3薄膜的阻变开关特性

采用磁控溅射系统在Pt衬底上构建了Ag/BiFeO3 (BFO)/Pt三明治结构的阻变存储器件单元,该器件可以在较低的限制电流下实现阻变行为并显著降低功耗.在0.5 μA的低限制电流下,器件具较好双极I-V滞回曲线,开关电阻比值超过1个数量级,有效开关次数达500次以上,阻态保持时间超过1.8 ×104 s,有较好的保持特性.分析了该Ag/BFO/Pt器件的阻变开关机制,主要归因于Ag原子在BFO薄膜内的氧化还原反应引起的金属导电细丝的形成与断开.     

含Ti电极的非晶钛酸锶薄膜的阻变开关特性研究

采用射频磁控溅射法制备Ti金属薄膜作为反应电极,结合脉冲激光沉积法在Pt/Ti/Si衬底上制备了Ti/非晶-SrTiO3-δ (STO)/Pt结构的阻变存储器件单元.器件的有效开关次数可达200次以上.利用5 mV的小电压测量处于高低阻态的器件电阻,发现在经过3.1 ×105 s以后,两种阻态的电阻值均没有明显的变化,说明器件具有较好的保持特性.器件处于高阻态和低阻态的电阻比值可达100倍以上.在9mA的限制电流下,器件的低阻态为500 Ω,有利于降低电路的功耗.氧离子和氧空位的迁移在阻变开关中起到重要的作用,界面层TiOx发挥着氧离子库的作用.阻变开关机制归因为导电细丝(Filaments)的某些部分出现氧化或者还原现象,造成导电细丝的形成和断开.     

含Ag电极的非晶In-Ga-Zn-O薄膜的阻变开关特性

采用射频磁控溅射法在Pt/Ti/SiO2/Si衬底上制备了非晶InGaZnO4(α-IGZO)薄膜,利用直流磁控溅射法制备的Ag金属薄膜作为反应上电极,构建了Ag/非晶InGaZnO4(α-IGZO)/Pt结构的阻变存储器件单元。所制备的器件具有双极型阻变特性,写入时间仅为107 ns,经过300次循环开关后,器件仍显示良好的开关效应。对置于高低阻态的器件使用5 mV横电压测量其电阻,电阻值经过1.2×104s无明显衰减趋势,表明器件具有较好的保持特性。阻变开关机制归因于在外加电场的作用下,由于电化学反应,使得Ag导电细丝在存储介质α-IGZO薄膜中形成和溶解。     

高分子辅助化学溶液沉积法制备La0.7Sr0.3MnO3/Si薄膜及电磁输运研究

利用高分子辅助化学溶液沉积法在Si(100)衬底上外延生长La0.7Sr0.3MnO3薄膜.并利用X射线衍射仪结果、扫描电子显微镜结果和电阻率-温度曲线(ρ-T曲线)结果、磁电阻(MR)曲线结果对其晶体结构、表面形貌和电磁输运机制进行了研究.结果显示实验制备的La0.7Sr0.3MnO3薄膜为赝立方钙钛矿多晶结构,薄膜表面均匀平滑,结晶性好,晶粒尺寸约为50~70 nm.随着温度降低,薄膜电输运机制从绝缘体行为向转变金属导电行为.金属绝缘转变转变点温度(TMI)随磁场的增加而升高,在0 T和1 T分别为TMI=238K、246 K.电输运测试结果说明,低温(TTMI)时薄膜按照绝热近似的小极化子输运.     

(Mg0.7Zn0.3)TiO3-Ca0.61La0.26TiO3介质陶瓷的微波烧结研究

微波烧结法制备0.85(Mg0.7Zn0.3)TiO3-0.15(Ca0.61La0.26)TiO3 ((Mg0.7Zn0.3)TiO3-Ca0.61La0.26TiO3)系介质陶瓷,研究微波烧结工艺对(Mg0.7Zn0.3)TiO3-Ca0.61La0.26TiO3陶瓷烧结性能、微观结构、相组成和微波介电性能的影响.结果表明:(Mg0.7Zn0.3)TiO3-Ca0.61La0.26TiO3陶瓷的主晶相为(Mg0.7Zn0.3)TiO3、Ca0.61La0.26TiO3,第二相为(Mg0.7Zn0.3)Ti2O5;升温速率15 ℃/min,烧结温度1275 ℃,保温时间20 min时,陶瓷微波介电性能优良:εr=27.01,Q·f=103500 GHz,τf=+2 ppm/℃.     

陶瓷单晶(100)基底上外延生长Pt薄膜

用对靶溅射技术在MgAl2O4 (100) (MAO) 和SrTiO3 (100) (STO)单晶基底上制备Pt薄膜.基底温度为700℃时,Pt薄膜外延生长为(200)取向,Pt/STO 薄膜的电阻率很低,而Pt/MAO 薄膜表现出高电阻特征.此外,Pt (50nm)/La0.67Ca0.33MnO3 (50nm)/STO的制备和研究表明,在包括庞磁电阻材料的器件设计中,Pt是一种较好的电极材料.     

溅射温度对ITO/Ag/ITO多层复合薄膜的结构和光电性能的影响

本文采用直流磁控溅射分层溅射制备了氧化铟锡(ITO)/银(Ag)/ITO多层复合薄膜。系统研究了溅射温度对ITO/Ag/ITO多层复合薄膜的结构和光电性能影响。采用ITO(m(In₂O₃)∶m(SnO₂)=9∶1;直径60 mm)靶材和Ag(纯度99.999%;直径60 mm)靶材分层溅射,使ITO薄膜和Ag薄膜依次沉积在钠-钙玻璃基片上。结果表明,溅射温度对该薄膜的形貌和结构具有显著的影响。在中间Ag薄膜和顶层ITO薄膜的溅射温度均为120 ℃时,薄膜表面晶粒形貌由类球形转变为菱形,此时薄膜方阻为3.68 Ω/Sq,在488 nm处透射率为88.98%,且品质因数为0.03 Ω^-1,实现了低方阻高可见光透射率ITO/Ag/ITO多层复合薄膜的制备。     

Calculation of phase diagrams in AlxIn1−xAs/InP,AsxSb1−xAl/InP and AlxIn1−xSb/InSb nano-film systems

The models for calculation of phase diagrams of semiconductor thin films with different substrates were proposed by considering the contributions of strain energy, the self-energy of misfit dislocations and surface energy to Gibbs free energy. The phase diagrams of the Al_xIn_1−xAs and As_xSb_1−xAl thin films grown on the InP (1 0 0) substrate, and the Al_xIn_1−xSb thin films grown on the InSb (1 0 0) substrate at various thicknesses were calculated. The calculated results indicate that when the thickness of film is less than 1 μm, the strain-induced zinc-blende phase appears, the region of this phase extends with decreasing of the layer thickness, and there is small effect of surface energies of liquid and solid phases on the phase diagrams.     

Elastic properties of GexAsySe100−x−y glasses

The elastic properties of Ge_xAs_ySe_100−x−y (0x30; 10y40) glasses have been studied. The results were analyzed in terms of the dependence on the theoretical mean coordination number (mean number of covalent bonds per atom) m (m=2+(2x+y)×0.01). Three ranges of m (2.1m2.51, 2.51<m2.78, 2.78<m3) were revealed, where different dependencies of elastic moduli (Young’s modulus, shear modulus) and Poisson’s ratio of glasses on m were observed.     

Crystal growth of NdAl3(BO3)4 from K2O/MoO3/Nd2O3/B2O3/KF flux

NdAl₃(BO₃)₄ single crystals were grown by the flux method and the TSSG technique using a K₂O/3MoO₃/B₂O₃/0.5Nd₂O₃/KF flux system. Light-violet clear crystals could be obtained. The effects of fluoride on the growth of NAB crystals were investigated. As the content of KF was gradually increased, the growth form of NAB was changed from the equant to the columnar and the primary crystalline region of NAB was shrinked. At the ratio of KF/K₂O = 0.75, NAB crystals could not be grown.     

Synthesis and structure of new phases of the Am?1Bi2BmO3m+3 (m = 2) type

Three polycrystalline bismuth-containing layered perovskite-like oxides are synthesized by high-temperature solid-state reactions. One of these compounds was described previously, namely, Bi₃Ti_1.5W_0.5O₉, for which the unit cell parameters a = 5.372(5) Å, b = 5.404(4) Å, and c = 24.95(2) Å are determined in this study. The other two compounds, namely, Na_0.75Bi_2.25Nb_1.5W_0.5O₉ with the unit cell parameters a = 5.463(1) Å, b = 5.490(7) Å, and c = 24.78(0) Å and Ca_0.5Bi_2.5Ti_0.5Nb_1.5O₉ with the unit cell parameters a = b = 3.843(2) Å and c = 24.97(6) Å, are synthesized for the first time. The compositions of these compounds are based on the composition of the well-known compound Bi₃TiNbO₉ with a high Curie temperature (T _C = 1223 K), in which bismuth, niobium, and titanium atoms are partially or completely replaced by other atoms. The experimental and calculated interplanar distances determined from the X-ray diffraction patterns of the studied compounds are presented. __________ Translated from Kristallografiya, Vol. 50, No. 1, 2005, pp. 59–64. Original Russian Text Copyright ? 2005 by Geguzina, Shuvaev, Shuvaeva, Shilkina, Vlasenko.     

Digitally alloyed modulated precursor flow epitaxial growth of AlxGa1−xN layers with AlN and AlyGa1−yN monolayers

We propose a new growth scheme of digitally alloyed modulated precursor flow epitaxial growth (DA-MPEG) using metalorganic and hydride precursors for the growth of Al_xGa_1−xN layers with high-Al content at relatively low temperatures. The growth of high-quality, high-Al content Al_xGa_1−xN layers (x_Al>50%) that are composed of AlN and Al_yGa_1−yN monolayers on AlN/sapphire template/substrates by DA-MPEG was demonstrated. The overall composition of the ternary Al_xGa_1−xN material by DA-MPEG can be controlled continuously by adjusting the Column III mole fraction of the atomic Al_yGa_1−yN sub-layer. X-ray diffraction and optical transmittance results show that the AlGaN materials have good crystalline quality. The surface morphology of DA-MPEG AlGaN samples measured by atomic force microscopy are comparable to high-temperature-grown AlGaN and are free from surface features such as nano-pits.     

Vapour epitaxial growth and characterization of InAs1-xPx

The vapour growth of InAs_1-xP_x layers has been carried out by the hydride process. The phosphorus rich part of the system (0.7 ? x ? 1) was especially investigated. Heteroepitaxial deposits of InAs_1-xP_x and InP have been performed on substrates such as InAs, GaAs and GaP. A systematic study of the influence of the substrate orientation on the quality of the layer has been carried out by growth on hemispherical substrates. Preferential planes have been pointed out: (100) and (111) A for InAs, (111) for GaAs and GaP. The band gap variation as a function of the composition has been determined by photoluminescence at 4.2 °K and X-ray diffraction measurements. It fits the equation: E_G(x) eV = 0.425 + 0.722 x + 0.273 x² at 4.2 °K.     

Precipitation of In2O3 nano-crystallites from glasses in the system Na2O/B2O3/Al2O3/In2O3

Glasses in the system Na₂O/B₂O₃/Al₂O₃/In₂O₃ were melted and subsequently tempered in the range from 500 to 700 °C. Depending on the chemical composition, various crystalline phases were observed. From samples without Al₂O₃, In₂O₃ could not be crystallized from homogeneous glasses, because either spontaneous In₂O₃ crystallization occurred during cooling, or other phases such as NaInO₂ were formed during tempering. The addition of alumina, however, controlled the crystallization of In₂O₃. Depending on the crystallization temperature applied, the crystallite sizes were in the range from 13 to 53 nm. The glass matrix can be dissolved by soaking the powdered glass in water. This procedure can be used to prepare nano-crystalline In₂O₃-powders.