Synthesis of Au–Pd bimetallic nanoparticles under energetic irradiation fields

Bimetallic Au–Pd nanoparticles were synthesized under high-energy irradiation fields (1.17 and 1.33 MeV γ-rays, 9 MeV electrons, and 1.6 GeV C ions) from solutions containing Au³⁺ and Pd²⁺ and cationic surfactant (sodium dodecyl sulfate). Particles synthesized by the irradiation were observed using conventional transmission electron microscope (TEM) and annular dark-field scanning transmission electron microscopy (ADF-STEM). The particles synthesized by γ-rays and C ion irradiation exhibit core–shell structure with a Au-core and a Pd-shell. The dependence of the size distribution of nanoparticles on the dose rate is discussed.     

A comparison of modifications induced by Li<Superscript>3+</Superscript> and Ag<Superscript>8+</Superscript> ion beams irradiation in poly(lactide-<Emphasis Type="Italic">co</Emphasis>-glycolide) films

Poly(lactide-co-glycolide) (PLGA) films were irradiated by 180 MeV/amu Ag⁸⁺ ions and 50 MeV/amu Li³⁺ ions at different fluences of 5 × 10¹⁰, 5 × 10¹¹ and 1 × 10¹² ions/cm². Modifications of polymer films induced by the swift heavy ions (SHI) irradiation were studied by X-ray diffraction (XRD), Field emission scanning electron microscopy (FESEM), Fourier transform infrared spectroscopy (FTIR) and UV–Vis spectroscopy. The dominant effect of the SHI beam irradiation is proposed to be chain scission which leads to breakage of polymer chains, followed by hydrogen abstraction. The results from FTIR spectroscopy showed that the intensity of all peaks of the irradiated samples decreased at high fluence of SHI, suggesting PLGA samples significantly degraded at high SHI fluence. The variation in optical band gap energy and Urbach energy with increasing fluence was calculated from UV–Vis spectroscopy and explained in terms of changes occurring in the polymer matrix. X-ray diffraction patterns also show appreciable changes in PLGA at high fluence. FESEM results revealed that the hydrophilicity of the PLGA surface increased with an increase in ion fluence. In this paper the optical, chemical and structural changes with different fluence rates are discussed.     

Evolution of microstructure and crack pattern in NiO thin films under 200 MeV Au ion irradiation

NiO thin films grown on Si (100) substrate by electron beam evaporation method and sintered at 700 °C were irradiated with 200 MeV Au¹⁵⁺ ions. The fcc structure of the sintered films was retained up to the highest fluence (1×10¹³ ions cm^?2) of irradiation. However the microstructure of the pristine film underwent a considerable modification with increasing ion fluence. 200 MeV Au ion irradiation led to compressive stress generation in NiO medium. The diameter of the stressed region created by 200 MeV Au ions along the ion path was estimated from the variation of stress with ion fluence and found to be ～11.6 nm. The film surface started cracking when irradiated at and above the fluence of 3×10¹² ions cm^?2. Ratio of the fractal dimension of the cracked surface obtained at 200 MeV and 120 MeV (Mallick et al., 2010a) Au ions was compared with the ratio of the radii of ion tracks calculated based on Coulomb explosion and thermal spike models. This comparison indicated applicability of thermal spike model for crack formation.     

Swift heavy ion induced modification in dielectric and microhardness properties of polymer composites

Polymer composites with different concentrations of organometallics (ferric oxalate) dispersed PMMA were prepared. PMMA was synthesized by solution polymerization technique. These films were irradiated with 120 MeV Ni¹⁰⁺ ions in the fluence range 10¹¹-5 × 10¹² ions/cm². The radiation induced modifications in dielectric properties, microhardness, structural changes and surface morphology of polymer composite films have been investigated at different concentrations of filler and ion-fluences. It was observed that electrical conductivity and hardness of the films increase with the concentration of the filler and also with the fluence. The dielectric constant (?) obeys the Universal law given by ?αfⁿ⁻¹. The dielectric constant/loss is observed to change significantly due to irradiation. This suggests that ion beam irradiation promotes the metal to polymer bonding and convert polymeric structure into hydrogen depleted carbon network. This makes the composites more conductive and harder. Surface morphology of the films has been studied using atomic force microscopy (AFM) and scanning electron microscopy (SEM). The average surface roughness is observed to increase after irradiation as revealed by AFM studies. The SEM images show the blisters type of phenomenon on the surface due to ion beam irradiation.     

Medium energy,heavy and inert ion irradiation of metallic thin films: studies of surface nano‐structuring and metal burrowing

In context to the ion induced surface nanostructuring of metals and their burrowing in the substrates, we report the influence of Xe and Kr ion‐irradiation on Pt:Si and Ag:Si thin films of ~5‐nm thickness. For the irradiation of thin films, several ion energies (275 and 350 keV of Kr; 450 and 700 keV of Xe) were chosen to maintain a constant ratio of the nuclear energy loss to the electronic energy loss (S_n/S_e) in Pt and Ag films (five in present studies). The ion‐fluence was varied from 1.0 × 10¹⁵ to 1.0 × 10¹⁷ ions/cm². The irradiated films were characterized using Rutherford backscattering spectroscopy (RBS), atomic force microscopy (AFM) and scanning electron microscopy (SEM). The AFM and SEM images show ion beam induced systematic surface nano‐structuring of thin films. The surface nano‐structures evolve with the ion fluence. The RBS spectra show fluence dependent burrowing of Pt and Ag in Si upon the irradiation of both ion beams. At highest fluence, the depth of metal burrowing in Si for all irradiation conditions remains almost constant confirming the synergistic effect of energy losses by the ion beams. The RBS analysis also shows quite large sputtering of thin films bombarded with ion beams. The sputtering yield varied from 54% to 62% by irradiating the thin films with Xe and Kr ions of chosen energies at highest ion fluence. In the paper, we present the experimental results and discuss the ion induced surface nano‐structuring of Pt and Ag and their burrowing in Si. Copyright © 2016 John Wiley & Sons, Ltd.     

Effect of swift heavy ion irradiation on the physical properties of CuIn(S0.4Se0.6)2 alloy thin films prepared by solution growth technique

Alloy thin films of CuIn(S_0.4Se_0.6)₂ material were deposited using the solution growth technique. The various deposition parameters such as pH of solution, time, concentration of ions and temperature have been optimized for the device grade thin films. The as-deposited films were annealed in a rapid thermal annealing (RTA) system at 450 °C in air for 5 min and subjected to high-energy Ag ion irradiations. Ag ion irradiation has been performed with an energy of 100 MeV at a fluency of 5×10¹² ions/cm² on the thin film. The changes in optical and electrical properties that occurred before and after post-deposition treatments in CuIn(S_0.4Se_0.6)₂ thin films were studied using X-ray diffraction (XRD) and AFM; increase in crystallinity was observed after annealing and irradiation. In addition, structural damages were observed in irradiated thin films. After annealing and irradiation, the surface roughness was seen to be increased. Decrease in resistivity was observed, which is consistent with the optical energy band gap. The results are explained by considering the high energy deposited due to the electronic energy loss upon irradiation, which modified the properties of the material.     

Radiation Stability of Copper Films under Irradiation with He<Superscript>2+</Superscript> Ions

The effect of irradiation of copper films with low-energy He²⁺ ions on their structural properties has been studied. The surface morphology and structural properties of the samples before and after irradiation have been examined by scanning electron microscopy, energy dispersive analysis, and X-ray diffraction. Bombardment of the initial samples with He²⁺ ions at a fluence of 1 × 10¹⁶ion/cm² alters the surface morphology of copper films and leads to the formation of nanoscale inclusions of hexagonal shape. An increase in the fluence to 1 × 10¹⁷ ion/cm² and higher results in the formation of cracks and amorphous oxide inclusions on the sample surface.     

Near-infrared DC approach by Bi<Superscript>3+</Superscript>–Yb<Superscript>3+</Superscript> co-doped YAG phosphor

Bi³⁺–Yb³⁺ ion pair co-doped YAG phosphors were successfully synthesized using conventional solid state reaction method varying the concentration of Yb³⁺ ions from 0.5 to 10 mol%. The optimum phosphors were characterized by powder X-ray diffraction (XRD), and surface morphology was studied with a scanning electronic microscope (SEM). The photoluminescence (PL) properties were studied with a spectrophotometers in near infrared (NIR) and ultraviolet visible (UV-Vis) regions. The synthesized phosphors can convert a photon of UV region (330 nm) into photons of NIR region (979 and 992 nm). The co-operative energy transfer (CET) was studied using a time decay curve and PL spectra. The theoretical value of quantum efficiency (QE) was calculated from steady time decay measurement, and the maximum efficiency approached up to 166.91 %. Hence, this phosphor could be used as a downconversion (DC) luminescent convertor in front of crystalline silicon solar cell (c-Si) panels to reduce heat loss due to spectral mismatch of the solar cells.     

Irradiation-induced reduction and luminescence properties of Sm doped in BaBPO5

Usually, Sm²⁺ ions could be reduced by heating the materials in reducing atmospheres. Exposure to ionizing radiations is also known to cause Sm³⁺→Sm²⁺ conversion. In this work, BaBPO₅ doped with the samarium ion was prepared by high temperature solid-state reaction. Sm²⁺ ions were obtained by two different reduction methods, i.e., heating in H₂ reduced atmosphere and X-ray irradiation. The measurements of X-ray diffraction (XRD), and scanning electron microscope (SEM) were investigated. It is found that the conversion of Sm³⁺→Sm²⁺ is very efficient in BaBPO₅ hosts after X-ray irradiation. Sm²⁺ ions under these two reduction methods exhibit different characteristics that were studied by measurements of luminescence and decay. The results showed that the luminescence properties of Sm²⁺ ions in BaBPO₅ were highly dependent on the sample preparation conditions.     

ESR study for ion beam induced phenomena in poly (tetrafluoroethylene-co-hexafluoropropylene) (FEP)

Trapped radicals induced in poly (tetrafluoroethylene-co-hexafluoropropylene) (FEP) were observed by X-band electron spin resonance (ESR) spectroscopy at room temperature (RT) under atmospheric field after an irradiation with various kinds of high energy ion beams (6 MeV/u). The irradiation was carried out to a stacked FEP films under vacuum (<4E?4 Pa) at RT with various fluences from 1.0×10⁹ to 1.0×10¹¹ ions/cm². All ESR spectra indicated an existence of peroxy radicals in each of the FEP films without any relation to a kind of ion and a penetration depth. Obtained depth profiles of radical concentrations induced with each ion beam almost correspond to those of stopping power. The trapped radical concentrations were strongly dependent on stopping power. It was found that G-value of trapped radicals by ion beam irradiation was decreased with increasing a stopping power, and was less than the case of gamma-rays irradiation.     

Investigation of 500 keV Si ion induced surface structuring of Ni and Ti for enhancement of field emission properties

The present paper reports the investigation of surface morphology, elemental composition, phase changes and field emission properties of Si ion irradiated nickel (Ni) and titanium (Ti). The Ni and Ti targets have been irradiated with 500 keV Si ions generated by Pelletron accelerator at various fluences ranging from 6.9 × 10¹³ to 77.1 × 10¹³ ions/cm². Stopping range of ions in matter analysis revealed higher values of electronic stopping and sputtering yield for Ni as compared with Ti. For both irradiated metals, electronic energy loss dominant over the nuclear stopping. The growth of induced surface structures have been analysed by using field emission scanning electron microscopy (FESEM) analysis. In case of Ni, as the ion fluence increases from 6.9 × 10¹³ to 65.8 × 10¹³ ions/cm², the formation of spherical particulates, agglomers and sputtering is observed. Although in the case of Ti, with the increase of Si ion fluence from 11.6 × 10¹³ to 77.1 × 10¹³ ions/cm², the formation of irregular-shaped particulates along with crater and sputtered channels is observed. X-ray diffraction (XRD) analysis shows that no new phase is identified. However, a significant increase in peak intensity is observed with increasing ion fluence. The variation in crystallite size and dislocation line density is also observed as a function of Si ion fluence. Fourier transform infrared spectroscopy analysis shows that no bands are formed after the Si ion irradiation. Field emission properties of ion-structured Ni and Ti are well correlated with the growth of surface structures observed by SEM and dislocation line density evaluated by XRD analysis.     

Photo-stimulated luminescence of KCl:Eu under X-ray and ion irradiation

We compared the photo-stimulated luminescence (PSL) process of storage phosphor KCl:Eu under the irradiation of X-ray, 2.0 MeV H⁺ ions and 2.0 MeV He⁺ ions. The purpose of the irradiation of H⁺ and He⁺ ions was to mimic the irradiation effects of neutrons. In each case, it was revealed that F-centers were involved in the PSL process. We observed an entirely different fluence-dependent PSL behavior between the X-ray and the ion irradiation, whereas the behavior of the F-center absorption was quite similar. This difference was due to the different yields of the trapping sites for the electrons liberated from the F-centers, and the difference in the yield was ascribed to the difference in the excitation density. This result clearly indicated a marked difference in the PSL process under X-ray and neutron irradiations and indicated that the analysis of the PSL process under ion irradiation is highly important for the application of PSL phosphors to neutron radiography.     

Carbon ion beam induced modifications of optical,structural and chemical properties in PADC and PET polymers

We report a study on the carbon ion beam induced modifications on optical, structural and chemical properties of polyallyl diglycol carbonate (PADC) commercially named as CR-39 and Polyethyleneterepthalate (PET) polymer films. These films were then irradiated by 55 MeV C⁵⁺ ion beam at various fluences ranging from 1×10¹¹ to 1×10¹³ ions/cm². The pristine as well as irradiated samples were subjected to UV–Visible spectral study (UV–Vis), Photoluminescence (PL), X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectroscopy. It has been found that ion irradiation may induce a sort of defects in the polymers due to chain scission and cross linking as observed from PL spectral study. It is revealed from UV–Vis spectra absorption edge shifted towards longer wavelength region after irradiation with increasing ion fluence. This shift clearly reflects decrease in optical band gap. The XRD study indicates the gradual decrease in intensity in case of PADC with increasing ion fluence. However, the intensity pattern increased in case of PET at fluence of 10¹¹ ion/cm² then decreased with further increase in fluence. Crystalline size of PADC was found to be decreasing gradually with increase of ion fluence. Whereas, the crystalline size of PET films found to increase with lower fluence and decreases with higher ion fluence. FTIR spectrum also shows the change in intensity of the typical bands after irradiation in the both the polymers. The results so obtained can be used successfully in heavy ions dosimetry using well reported techniques.     

Fractal characterizations of energetic Si ions irradiated amorphized-Si surfaces

The fractal characterizations of amorphized-silicon (a-Si) surfaces under low-energy ion irradiations are presented. The crystalline Si surfaces have been irradiated with Si ions having different energy of 35, 50, 75, and 100 keV at a fixed fluence of 2 × 10¹⁵ ions-cm⁻². The samples have been characterized by means of using Raman spectroscopy, Channeling-Rutherford backscattering spectrometry (C-RBS), and atomic force microscopy (AFM) techniques. The ion irradiation leads to the amorphization of Si near surface and subsurface region, as confirmed by Raman and C-RBS measurement. The AFM analysis shows that the ion irradiation also leads to the formation of nanodots on the surface and size of the dots increases with increasing of the ion energy. The fractal analysis has been performed using AFM images in order to get the significant evidence about nanodot formations and the correlation inside the surface microstructures. The kinetic roughening and surface smoothening, due to dissipation of kinetic energy of ions through collision cascades of the surface atoms, lead to the formation of dot-like structures.     

Changes in the surface morphology induced by 1.0‐MeV Au ion bombardment of Ti and Ti‐6Al‐4V

The effects of surface sputtering by 1.0‐MeV Au ion implantation in commercially pure Ti and its alloy Ti‐6Al‐4V have been studied. These materials are associated with applications in orthopaedic implants. There are few studies that try to explain the ion implantation process of Au in these materials when considering the effects generated on the surface by sputtering, especially at energies of the order of MeV. Discs of these materials were mirror polished and then implanted with 1.0‐MeV Au ions for 4.7 × 10¹⁷ ions/cm² at 45° incident angle with respect to the surface. Part of the eroded material was deposited simultaneously on glass slides to determine their spatial distribution. These discs and the slides were analysed by Rutherford backscattering spectroscopy (RBS), scanning electron microscopy (SEM), optical microscopy and atomic force microscopy. The implanted materials show the initial production of surface ripples that evolve into banded structures. Copyright © 2014 John Wiley & Sons, Ltd.     

Preferential sputtering observed in Auger electron spectroscopy sputter depth profiling of AlAs/GaAs superlattice using low‐energy ions

Auger electron spectroscopy (AES) sputter depth profiling of an ISO reference material of the GaAs/AlAs superlattice was investigated using low‐energy Ar⁺ ions. Although a high depth resolution of ～1.0 nm was obtained at the GaAs/AlAs interface under 100 eV Ar⁺ ion irradiation, deterioration of the depth resolution was observed at the AlAs/GaAs interface. The Auger peak profile revealed that the enrichment of Al due to preferential sputtering occurred during sputter etching of the AlAs layer only under 100 eV Ar⁺ ion irradiation. In addition, a significant difference in the etching rates between the AlAs and GaAs layers was observed for low‐energy ion irradiation. Deterioration of the depth resolution under 100 eV Ar⁺ ion irradiation is attributed to the preferential sputtering and the difference in the etching rate. The present results suggest that the effects induced by the preferential sputtering and the significant difference in the etching rate should be taken into account to optimize ion etching conditions using the GaAs/AlAs reference material under low‐energy ion irradiation. Copyright © 2005 John Wiley & Sons, Ltd.     

Dielectric properties and surface morphology of swift heavy ion beam irradiated polycarbonate films

Swift heavy ion beam irradiation induces modification in the dielectric properties and surface morphologies of polycarbonate (PC) films. The PC films were irradiated by 55 MeV energy of C⁵⁺ beam at various ions fluences ranging from 1 × 10¹¹ to 1 × 10¹³ ions cm^?2. The dielectric properties (i.e., dielectric constant, dielectric loss, and AC conductivity) and surface morphologies of pristine and SHI beam irradiated PC films were investigated by dielectric measurements, atomic force microscopy (AFM), and optical microscopy. The dielectric measurements show that the dielectric constant, dielectric loss, and AC conductivity increase with ion fluences and temperature, however, the dielectric constant and AC conductivity decrease while dielectric loss increases with frequency. AFM shows the increase in average roughness values with ion fluences. The change of color in PC films has been observed from colorless to yellowish and then dark brown with increases of ion fluence by using optical microscopy.     

Chemical structure and surface morphology evolution of glow discharge polymer films by Ar‐ions intermittent etching

The Ar‐ions intermittent‐etching technique was successfully incorporated during the deposition of glow discharge polymer (GDP) films. The ionic components and ion energy distributions (IEDs) of C₄H₈/H₂ and C₄H₈/H₂/Ar plasma were diagnosed by an energy‐resolved mass spectrometer, respectively. The Fourier transform infrared spectroscopy, scanning electron microscope, and white‐light interferometer were used to studying the chemical structure, surface morphology, and roughness of the GDP films, which are deposited with the various time of Ar‐ions intermittent etching. With the introduction of Ar into the chamber, the intensity of the C H absorption peaks becomes weak and the large‐mass C H species were ionized and dissociated from the mass spectrometer results. The surface roughness of GDP films are decreased with Ar‐ions intermittent etching, the lowest surface roughness (Rq) is only 33.6 nm when the intermittent cycle is 60 minutes/15 minutes. The highest sp³CH₃ (sym) absorption peaks are attributed to samples also with 60‐minute/15‐minute intermittent cycle, which shortens the length of the carbon chain and reduces the probability of the cluster formations.     

Ion-beam irradiation effects on polyimide-UV–vis and infrared spectroscopic study

Ion-beam irradiation effects on polyimide, Kapton™, were studied with respect to optical and electronic properties. Stack films of Kapton™ (12.5 μm thick) were irradiated to various ion beams in air or vacuo at room temperature and subjected to ultraviolet–visible (UV–vis) spectroscopy, and change in absorbance and energy gap is discussed. The UV–vis absorption spectrum, which is assigned to the transition of electrons in benzene rings from π to π* orbital, upon He²⁺ (6 MeV/u) irradiation in air, shifted towards longer wavelength direction for all cases, and the shift was more obvious for higher linear energy transfer (LET) ion beams. The energy gap of the transition was estimated, and the H⁺ and He²⁺ ion beams caused little change in the transition energy gap Eg, while the heavier ions such as C⁶⁺ and Si¹⁴⁺ caused more significant decrease. This decrease is assumed to the structural changes around benzene rings, and the infrared spectroscopy revealed breakage in imide groups next to benzene ring in the repeating unit of polyimide.     

Fabrication and photoluminescence properties of Ag0 and Ag0–Er3+ containing plasmonic glass nanocomposites in the K2O–ZnO–SiO2 system

Here, we report the preparation of nano silver (Ag) and nano Ag-erbium (Ag–Er) co-embedded potassium–zinc-silicate based monolithic glass nanocomposites by a controlled heat-treatment process of precursor glasses. The nanocomposites were characterized by differential scanning calorimeter, dilatometer, UV–Visible absorption spectrophotometer, X-ray diffractometer and transmission electron microscope and spectroflurimeter. A strong surface plasmon resonance (SPR) band is observed around 430 nm in all the heat-treated glass nanocomposite samples due to the formation of Ag⁰ nanoparticles (NP). The Ag-glass nanocomposite samples display nearly 2-fold enhanced photoluminescence (PL) at 470 nm upon excitation at 290 nm until the size of the NP increases to the value equals to the mean free path of conduction electrons inside the particles. On contrary to this, the photoluminescence spectra of Er³⁺ ions exhibit a gradual decrease of NIR emission at 1540 nm due to ⁴I_13/2 → ⁴I_15/2 transition under excitation at 523 nm in the heat-treated glass nanocomposites which happened due to excitation energy transfer of Er³⁺ ions to the Ag NP, acting as ‘plasmonics diluents’ for Er³⁺ ions. These nanocomposites have huge potential for various nanophotonic applications.