可见光响应(001)晶面纳米TiO2光催化剂的制备及性能研究

以钛酸丁酯为钛源,氢氟酸为形貌控制剂,采用水热法合成了具有高表面能(001)晶面的锐钛矿相TiO2纳米材料.利用X射线衍射(XRD)、扫描电镜(SEM)、透射电镜(TEM)及紫外-可见漫反射光谱分析(UV-vis)对样品的形貌、结构和谱学性能进行表征,并以甲基橙溶液为目标污染物,研究其光催化性能和最佳制备条件.结果表明,以氢氟酸为形貌控制剂时,可制备锐钛矿相(001)晶面纳米TiO2纳米材料,能拓宽TiO2体系光响应范围,并具有较高的光催化性能;当反应温度为180.℃、时间为24 h、F/Ti摩尔比为1.5时,样品对甲基橙溶液光催化降解率最高,在紫外光照射条件下1h内降解率可达99.08;,其可见光降解率为66.79;.     

载Ag二氧化钛纳米线的制备及其光催化性能

利用水热合成法,制备出了二氧化钛纳米线,通过葡萄糖还原Ag(NH3)+2,在制备出的二氧化钛纳米线表面负载了 Ag纳米颗粒.利用透射电镜(TEM)、高分辨透射电镜(HRTEM)、X射线光电子能谱(XPS)和紫外-可见光谱(UV-Vis)对产物进行了表征.结果表明:该Ag/TiO2纳米线在可见光区域表现出较强的吸收性能.测试了样品降解酸性红3R溶液的活性.结果表明,TiO2纳米线表面负载Ag纳米颗粒对提高其光催化性能具有积极的作用.     

机械化学合成CdS/TiO2复合纳米材料及其光催化性能研究

以纳米CdS和TiO2为原料,采用简便的机械化学法合成了CdS/TiO2复合光催化剂.用X射线衍射(XRD)、X射线光电子能谱(XPS)、激光拉曼光谱、透射电镜(TEM)、紫外-可见漫反射光谱(DRS)等手段对样品进行表征和分析.以亚甲基蓝为目标降解物,评价了其光催化活性.结果表明,机械化学有效促进了CdS在TiO2纳米颗粒表面的分散和相互作用,形成了CdS/TiO2复合纳米结构的光催化剂,25wt;-CdS/TiO2的可见光催化活性较纯CdS提高了5倍,在可见光照射下,其光电流响应提高了5倍.CdS/TiO2光催化活性的提高归结于CdS的表面杂化作用,提高了光生电子-空穴的有效分离与迁移.     

不同形貌的钨酸铋纳米材料的制备及其光催化性能

利用水热法通过调节溶液pH值和表面活性剂CTAB浓度制备了不同结构与形貌的钨酸铋纳米材料,用X射线衍射(XRD)、场发射扫描电镜(FESEM)、透射电镜(TEM)等测试方法对产物进行了结构与形貌的表征,并研究了不同结构与形貌的钨酸铋样品对甲基橙的可见光催化降解性能.结果表明,在低pH值时样品为Bi2WO6相纳米片,随着pH值的增加,样品中出现了Bi3.84W0.16O6.24相八面体纳米颗粒,高pH值时,样品则为纯Bi3.84W0.16O6.24相八面体颗粒.随着表面活性剂浓度的增加,Bi2WO6纳米片有自组装的趋势,最终形成花瓣状结构.光催化甲基橙实验结果表明不同形貌的钨酸铋样品对甲基橙有不同的催化降解活性,片状Bi2WO6相纳米片高于Bi3.84W0.16O6.24相八面体颗粒.     

TiO2/α-Fe2O3和TiO2/叶FeOOH纳米复合材料的制备与表征

以TiCl4为前驱体,α- Fe2O3、α-FeOOH为载体,采用水解沉淀法制备TiO2/α-Fe2O3和TiO2/α-FeOOH两种纳米复合光催化材料.采用X射线衍射分析(XRD)和透射电子显微镜(TEM)等对样品的晶相组成、形貌和微结构进行表征.结果表明,TiO2/α-Fe2O3复合材料由赤铁矿和金红石相TiO2组成;TiO2/α-FeOOH复合材料由水合氧化铁和金红石相TiO2组成.TiO2/α-Fe2O3复合材料中颗粒状TiO2能包覆在粒状氧化铁红表面,形成厚度范围在5～20 nm左右的薄层;TiO2/α-FeOOH复合材料是一种核壳结构,厚度范围在100～150 nm的针状TiO2聚集体为壳,能完整的包覆核层氧化铁黄.采用UV-vis光谱和甲基橙降解对其光催化活性进行评价,结果表明纳米TiO2与α-Fe2O3、α-FeOOH分别构成复合材料后,两者之间存在协同效应.     

TiO2-Pt-CoPi三元复合物的制备、表征和光催化性能研究

以钛酸正丁酯TBT为原料,采用水热法制备了TiO2纳米片,并用光沉积法将Pt纳米颗粒和CoPi催化剂分步沉积在TiO2纳米片上,制备TiO2-Pt-CoPi三元复合物.利用X射线衍射(XRD)、扫描电镜(SEM)等对样品进行了表征,测试了三元复合物的光催化活性.实验结果表明,通过控制光沉积时间、顺序等因素对复合光催化剂的光催化性能进行优化,大大提升了其完全光解水的光催化活性.     

Ag/TiO2的制备及光催化性能研究

以钛酸丁酯为钛源,采用溶胶-凝胶法制备了Ag掺杂纳米TiO2,结合XRD、TEM、Uv-vis等测试手段,对样品的结构和性能进行了表征.以甲基橙溶液为目标降解物,探讨了Ag掺杂纳米TiO2的光催化活性,分析了Ag掺杂纳米TiO2提高光催化性能的机理.结果表明,Ag掺杂使TiO2晶粒减小,拓展了TiO2的光谱响应范围,降低了光生电子和空穴的复合几率;Ag掺杂后,TiO2光催化剂的吸收光谱向可见光区发生红移.Ag掺杂量为n(Ag)∶n(TiO2)=0.08;,紫外光下240 min,Ag掺杂纳米TiO2前后材料对甲基橙溶液去除率由60.3;提高到83.1;.     

蒸汽处理钛酸制备锐钛矿相TiO2纳米晶体的光催化性能

采用水热法,以锐钛矿相TiO2为原料,10 mol/L NaOH溶液作为矿化剂,合成了钛酸钠纤维.用XRD和TEM对产物进行了表征,观察到纤维长度超过10 μm,宽度为10～100 nm.酸洗后对其进行二次蒸汽处理,得到了具有自组织趋势的锐钛矿相纳米TiO2晶体纤维.以1 kW紫外灯为光源,分析了合成的锐钛矿相TiO2纳米晶体的光催化降解亚甲基蓝性能及其长期稳定性.结果表明:合成的锐钛矿相TiO2纳米晶体对亚甲基蓝的光降解活性很高,纳米晶体易回收,且循环使用光催化活性没有发生衰减.     

氟改性TiO2的制备及光催化性能研究

以钛酸丁酯为钛源,氟化铵为氟源,采用溶胶凝胶法制备氟改性二氧化钛光催化剂,并用扫描电镜(SEM)、X射线衍射(XRD)、紫外可见光分度计(UV-Vis)、X射线光电子能谱(XPS)、光致发光荧光光谱仪(PL)、氮气吸附-脱附等方法对样品进行表征.以甲基橙(MO)为模拟污水,研究其光催化活性.结果 表明:F改性TiO2为纳米锐钛矿相,比表面积为141 m2/g.F以化学吸附态存在于TiO2的表面,形成(=)Ti-F基团,F的加入使得TiO2的吸收带边发生了红移,在甲基橙浓度为20 mg/L,紫外光照射时间为80 min时,F改性TiO2的脱色率最大达到了97;,具有较高的光催化活性.     

水热法制备Nd3+-介孔TiO2/GO复合材料及光催化性能研究

采用水热法首先制备稀土Nd3+掺杂介孔TiO2,进而复合氧化石墨烯(GO)合成了系列Nd3+-介孔TiO2/GO复合材料.通过X射线衍射(XRD)、透射电镜(TEM)、孔结构分析(BJH与BET)、X射线光电子能谱(XPS)和紫外-可见漫反射(UV-vis)等测试手段对样品的微观结构、形貌、样品表面各元素价态及谱学性质进行表征,并以甲基橙模拟污染物测试其光催化性能.结果表明,所制样品均为锐钛矿结构TiO2,晶粒尺寸在3~4 nm之间;从UV-vis测试结果分析可知,与Nd3+-介孔TiO2和TiO2/GO相比,稀土Nd3+和GO的协同效应更能有效减小TiO2半导体禁带宽度,从而增加其对可见光的吸收.此外,不同光照射下光催化降解甲基橙的实验表明,所制备样品均有较强的紫外及可见光光催化性能,其中系列Nd3+-介孔TiO2/GO复合体系可见光光催化性能更为显著.     

Modelling of mechanism of agglomeration of KCl crystallization

The article presents an analysis into agglomeration during KCl vacuum crystallization. The theoretical and experimental investigations into the mechanism of agglomeration during mass crystallization result in an extension of the growth phenomena within the known model equations. The basis for this is essentially constituted by the collision model concepts of the theory of floculation in disperse systems. The parameters derived from the microprocess analysis (energy dissipation, content of solids, growth rate of individual grains) lead to model equations which are confirmed by laboratory and test trials.     

Relationship of Morphological Types of Dynamic Forms of Crystals

Crystallography Reports - The relationship of morphological spectra (sets of data on the morphological types of real polyhedral crystals and their probabilities under current physicochemical...     

Velocities of Disappearance and Lifetime of Faces of Growing Crystals

The formulae for absolute R_disap and relative R velocities of disappearance and lifetime τ of faces of growing crystals have been derived for stationary growth. It was shown that the quantities are determined by the relative growth velocity R_A/R_critA of the vanishing face A with respect to the critical growth velocity R_critA and by the geometry of a crystal expressed by the trigonometric functions of interfacial angles β and γ formed between face A and the adjacent faces. R increases and τ decreases with the increase in R_A/R_critA to certain limiting values. The calculations have been verified and illustrated by the experimental results for triclinic potassium bichromate (KBC) crystals. Results enable ones to predict values of velocities of disappearance and lifetimes of undesirable, supplementary faces of any real crystal.     

Development of Pauling's concepts of geometric characteristics of atoms

The evolution of the geometric characteristics introduced by Pauling and their dependence on the specific features of the structure and chemical bonds have been considered. The values of the covalent and van der Waals radii are given as well as their relationships and mutual transitions.     

Comparative analysis of two methods of calculation of the orientation of domain walls in ferroelastics

Two types of domain-wall equations are analyzed: the equations derived by the Sapriel method and the equations obtained by interface matching of the thermal-expansion tensor. It is shown that, for W-type domain walls, these methods yield the same equations. For W′-type domain walls, the equations obtained by different methods coincide for proper ferroelastics and differ for improper ferroelastics.     

Dependence of the parameters of equations of viscous flow on chemical composition of silicate melts

The temperature dependence of viscosity of silicate melts is discussed in the framework of the Avramov–Milchev (AM) equation. The composition is described by means of two parameters: the molar fraction, x, and the “lubricant fraction”, l. The molar fraction is the sum of the molar parts x_i of all oxides dissolved in SiO₂, the molar fraction of the latter being 1 ? x. It is shown that, with sufficient precision, two of the parameters of the AM equation can be presented as unique functions of the molar fraction. On the other hand, x is not sufficient to determine properly the reference temperature T_r , at which viscosity is η_r = 10¹³ [dPa.s]. Therefore, additional parameter, “lubricant fraction” l, is introduced. For each of the components, l_i is a product of molar part x_i and a specific dimensionless coefficient 0 ≤ k_i ≤ 1 accounting for the specific contribution of this component to the increased mobility of the system. It is demonstrated that, for l > 0, the reference temperature is related to the “lubricant fraction” l through the reference temperature T_r,SiO2 of pure SiO₂.     

A review of measurement of thermophysical properties of silicon melt

Measurements of thermophysical properties of Si melt and supplementary study of X-ray scattering/diffraction by the authors' group were reviewed. The values obtained differed variously from those of literature. Density was 2–3% larger, surface tension 20–30% smaller, viscosity up to 40% larger, electrical conductivity 8% smaller, spectral emissivity more or less in good agreement with literature values, and thermal diffusivity a few percent larger. An anomalous density jump was found near the melting point. Surface tension and viscosity also showed anomaly. A strange time-dependent change of density was observed over 3 h after melting. X-ray analyses suggested a slight change in local atom ordering, but showed no sign of cluster formation. An addition of 0.1 at% gallium caused the density jump to disappear, while that of boron caused no change. An EXAFS study of the former melt indicated a strong interaction between Ga and Si atoms as if molecules of GaSi₃ existed. The implications of the measured properties are a possibility of soft-turbulence in an Si melt in a relatively large crucible, a more complicated manner of intake of oxygen depleted molten Si from the free surface region to underneath the growing crystal, and a relaxation of the melt after melting arising from trapped gas species.     

Generation of crystal structures of heteromolecular compounds by the method of discrete modeling of packings

Within the method of discrete modeling of packings, an algorithm of generation of possible crystal structures of heteromolecular compounds containing two or three molecules in the primitive unit cell, one of which has an arbitrary shape and the other (two others) has a shape close to spherical, is proposed. On the basis of this algorithm, a software package for personal computers is developed. This package has been approved for a number of compounds, investigated previously by X-ray diffraction analysis. The results of generation of structures of five compounds—four organic salts (with one or two spherical anions) and one solvate—are represented.