明胶/双相磷酸钙多孔陶瓷支架的制备及性能研究

羟基磷灰石与人体骨骼的无机成分相似,具有良好的生物相容性及骨传导性能,β-磷酸三钙(β3-TCP)是生物降解和生物吸收型生物活性材料,其降解产物Ca、P可进入活体循环系统形成新骨,成为理想的硬组织替代材料.以碳酸钙(CaCO3)和磷酸(H3PO4)为原料,用直接沉淀法合成双相磷酸钙陶瓷粉体,随后采用激光成型技术制备了聚氨酯泡沫载体,通过泡沫浸渍法制备了多孔明胶/双相磷酸钙陶瓷支架,并采用戊二醛交联改善支架性能.通过XRD、SEM等方法分析复合多孔支架的成分、形貌以及结构特征,并评价复合生物支架的降解性、孔隙率、力学性能和细胞毒性等.结果 表明:实验制备的粉体为双相磷酸钙,成分为β-磷酸三钙(β-TCP)和羟基磷灰石(HAP),其中,β-TCP为主相.该生物支架具有良好的孔隙结构,包含规则的直通孔和不规则的连通孔,直通孔孔径在800～950μm之间,不规则连通孔在300 ～500 μm之间,支架平均孔隙率达到83.1;;支架平均抗压强度达到1.06 MPa,满足于骨组织工程对支架材料的力学要求;该生物支架的细胞毒性为0级或1级,无细胞毒性,具有良好的降解性能.     

磁改性HAP/CS/SiO2骨组织工程支架的制备及性能研究

本文以氢氧化钙(Ca(OH)2)、磷酸(H3PO4)和CS为原料,湿法合成了CS改性的纳米羟基磷灰石(Nano HAP)复合粉体.以上述粉体为原料,采用模具成型法,以硅胶为粘接剂,通过添加硬脂酸微球作造孔剂制成多孔骨组织工程支架;通过添加纳米四氧化三铁(Nano Fe3O4)对复合材料进行磁改性制得了磁性多孔支架.通过X射线衍射仪(XRD),红外光谱分析(FT-IR),透射电镜(TEM)和扫描电镜(SEM)对材料的成分和结构进行了表征.采用力学试验机、体外降解实验和细胞毒性实验对材料的力学性能和生物学性能进行了检测.结果表明:制备的Nano HAP在成分和结构上类似于自然骨羟基磷灰石;多孔骨组织工程支架具有良好的成骨性能,并且其三维孔洞结构满足骨组织工程支架的要求;磁改性多孔支架具有良好的磁性能.以上材料均无细胞毒性.因此,该材料有望被用于临床的骨修复治疗.     

聚乳酸/羟基磷灰石晶须复合多孔支架的制备与性能研究

采用溶剂浇铸/真空挥发/粒子沥滤方法,采用氯化钠为造孔剂、氯仿为溶剂,最终制备出聚乳酸(PLA)/羟基磷灰石晶须(HAw)复合多孔支架.通过SEM表征了聚乳酸支架的表面形貌,用XRD、SEM、FT-IR等分析了加入不同量HAw的聚乳酸的成分、形貌以及结构特征,并研究羟基磷灰石晶须的添加量对支架的孔洞结构参数、力学性能及生物性能的影响,结果表明:可以通过控制氯化钠的粒度及用量来调节支架的孔径及孔隙率;聚乳酸(PLA)/羟基磷灰石晶须(HAw)复合多孔支架结构均匀,具有较高的孔隙率和良好的孔隙连通性;支架孔隙率在83.94;～91.08;范围内,可以满足骨组织工程对支架材料的要求;复合多孔支架的抗压强度达到5.72～ 12.73 MPa,在羟基磷灰石晶须质量比为10;时达到最大值,为12.73 MPa.     

铋基碘氧化物/煤矸石复合粉体的制备及光催化性能

以表面改性的煤矸石粉、硝酸铋和碘化钾为原料,采用超声法制备了BiOI/煤矸石复合粉体和Bi5 O7I/Bi4O5I2/煤矸石复合粉体,利用XRD、SEM、EDS对所制得的样品进行了表征,并以模拟太阳光为光源,罗丹明B为目标降解物,对其光催化活性进行了研究.结果表明:BiOI/煤矸石复合粉体和Bi5O7I/Bi4O5I2/煤矸石复合粉体均表现出较高的可见光光催化降解能力,并且Bi5O7I/Bi4O5I2/煤矸石复合粉体的光催化活性要大于BiOI/煤矸石复合粉体的光催化活性.Bi5O7I/Bi4O5I2/煤矸石复合粉体三次循环利用后光催化2h对罗丹明B的降解率仍可达到88.9;,可重复使用.     

纳米羟基磷灰石/羧甲基壳聚糖多孔生物复合材料的制备与性能研究

采用化学沉淀法合成了纳米羟基磷灰石粉体(HAP),以无水乙醇为沥滤剂,以16.7%(质量分数)的柠檬酸水溶液作粘结剂,通过粒子沥滤法制备了HAP/CMCS多孔材料,并对其进行了IR、XRD、SEM、孔隙率及抗压强度的测试。结果表明HAP/CMCS复合材料复合前后两组份的化学组成未发生显著变化,但两相间发生了相互作用。多孔材料孔隙率高,孔径分布范围宽,其尺寸分布大约从几微米到600微米,以圆形为主,具有良好的贯通性,非常有利于组织在其中的长入与扩展。当复合材料中CMCS含量为40%,复合材料/造孔剂的质量比为1:1时,多孔材料的孔隙率接近75%,其抗压强度可达21MPa以上,可以满足骨组织工程支架材料的要求。     

壳聚糖分子对共沉淀法合成羟基磷灰石/壳聚糖粉体材料晶体形貌的影响

采用沸腾水浴共沉淀法,以尿素为pH调节剂制备羟基磷灰石/壳聚糖(HA/CS)复合粉体材料,通过XRD、FTIR和SEM对晶体组成、形貌进行表征,考察了壳聚糖平均分子量、添加量及反应物浓度对HA/CS晶体形貌的影响.结果表明,沸腾水浴共沉淀法可在较短时间内制备HA/CS复合粉体,改变反应物浓度可使晶体形貌由针状与球状同时存在转变为几乎全部是球状晶体,而CS平均分子量和添加量的影响较小.     

ZnS/镍锌铁氧体磁性光催化剂的制备与光催化活性

采用共沉淀法制备了镍锌铁氧体,并用氨水、乙二胺四乙酸进行表面改性;然后以醋酸锌、硫代乙酰胺和表面改性的镍锌铁氧体为原料,采用超声化学法制备了ZnS/镍锌铁氧体的复合粉体.采用X射线粉末衍射(XRD),高分辨透射电子显微镜(HRTEM)以及所带能谱仪(EDS)对所制得的样品进行了表征,并以太阳光为光源,甲基橙为目标降解物,对其光催化活性进行了研究.结果表明:镍锌铁氧体负载的ZnS为立方闪锌矿结构,单个ZnS颗粒尺寸分布在15 ～25 nm之间;ZnS/镍锌铁氧体复合粉体在可见光下具有一定的光催化活性,且具有磁性能可实现磁分离回收.     

三种改性方法对纳米ZnO催化剂粉体的光催化性能的影响

以SnCl4·5H2O、ZnNO3·6H2O、HCl、NaOH、FeCl3·6H2O为原料,采用共沉淀法制备Fe掺杂纳米ZnO、纳米ZnO/SnO2和Fe掺杂纳米ZnO/SnO2三种复合催化剂粉体,以降解甲基橙溶液反应为模型,研究了不同比例的ZnO/SnO2复合、Fe元素掺杂量以及SnO2复合Fe元素掺杂同时作用对纳米ZnO粉体光催化活性的影响,采用X射线衍射(XRD)测试方法对不同量Fe元素掺杂纳米ZnO粉体进行了表征.采用透射电镜对三种改性方法ZnO粉体进行表征.结果表明:随着ZnO/SnO2的物质的量比增加,ZnO/SnO2复合光催化剂的催化活性先增加,然后降低;随着Fe掺杂量的增加,纳米ZnO粉体的光催化活性先增加,然后降低.三种改性方法都能提高纳米ZnO粉体的光催化活性,其中Fe元素掺杂以及SnO2复合改性纳米ZnO粉体的光催化效果最好,物相为ZnO和SnO2,颗粒尺寸为15 ～20 nm,分散性好,比表面积为68.7m2/g.     

HNTs/SiO2复合气凝胶制备及其性能研究

采用正硅酸乙酯(TEOS)为硅原,以硅烷改性的埃洛石纳米管(HNTs)为增强相,利用CO2超临界干燥技术制备具有优良力学和隔热性能的HNTs/SiO2复合气凝胶.利用傅立叶红外光谱、扫描电镜、比表面积与孔径分析仪、万能试验机和导热率测量仪等手段对HNTs改性后的表面状态、HNTs/SiO2复合气凝胶的微观形貌、孔结构、力学和导热性能进行了测试分析.结果表明:改性后的HNTs均匀分散到二氧化硅气凝胶基体中,并与SiO2纳米颗粒实现良好的结合,HNTs/SiO2复合气凝胶呈三维网络结构,当HNTs含量为15wt;时,平均孔径为10.47 nm;随着HNTs含量的增加,复合气凝胶的力学性能不断增强,同时其导热系数也不断增大,当HNTs含量为15wt;时,HNTs/SiO2复合气凝胶的抗压强度为0.85 MPa,导热系数为0.024 W/mK.     

Ag3PO4/ZnO复合粉体制备及其可见光催化性能

室温下,以ZnO粉体、Na2HPO4、AgNO3和聚乙烯吡咯烷酮为原料,成功制备出了系列Ag3PO4/ZnO复合粉体.采用X射线衍射仪、扫描电子显微镜和紫外-可见光谱仪分别对复合粉体的物相、形貌和可见光吸收性能进行了表征.研究了不同摩尔比的Ag3PO4/ZnO复合粉体的光催化性能.结果表明:当ZnO和Ag3PO4摩尔比约为1:1时,所得的Ag3PO4/ZnO复合粉体对罗丹明B染料的可见光催化效果最好,降解率达到99;.     

Calculation of phase diagrams in AlxIn1−xAs/InP,AsxSb1−xAl/InP and AlxIn1−xSb/InSb nano-film systems

The models for calculation of phase diagrams of semiconductor thin films with different substrates were proposed by considering the contributions of strain energy, the self-energy of misfit dislocations and surface energy to Gibbs free energy. The phase diagrams of the Al_xIn_1−xAs and As_xSb_1−xAl thin films grown on the InP (1 0 0) substrate, and the Al_xIn_1−xSb thin films grown on the InSb (1 0 0) substrate at various thicknesses were calculated. The calculated results indicate that when the thickness of film is less than 1 μm, the strain-induced zinc-blende phase appears, the region of this phase extends with decreasing of the layer thickness, and there is small effect of surface energies of liquid and solid phases on the phase diagrams.     

Elastic properties of GexAsySe100−x−y glasses

The elastic properties of Ge_xAs_ySe_100−x−y (0x30; 10y40) glasses have been studied. The results were analyzed in terms of the dependence on the theoretical mean coordination number (mean number of covalent bonds per atom) m (m=2+(2x+y)×0.01). Three ranges of m (2.1m2.51, 2.51<m2.78, 2.78<m3) were revealed, where different dependencies of elastic moduli (Young’s modulus, shear modulus) and Poisson’s ratio of glasses on m were observed.     

Crystal growth of NdAl3(BO3)4 from K2O/MoO3/Nd2O3/B2O3/KF flux

NdAl₃(BO₃)₄ single crystals were grown by the flux method and the TSSG technique using a K₂O/3MoO₃/B₂O₃/0.5Nd₂O₃/KF flux system. Light-violet clear crystals could be obtained. The effects of fluoride on the growth of NAB crystals were investigated. As the content of KF was gradually increased, the growth form of NAB was changed from the equant to the columnar and the primary crystalline region of NAB was shrinked. At the ratio of KF/K₂O = 0.75, NAB crystals could not be grown.     

Synthesis and structure of new phases of the Am?1Bi2BmO3m+3 (m = 2) type

Three polycrystalline bismuth-containing layered perovskite-like oxides are synthesized by high-temperature solid-state reactions. One of these compounds was described previously, namely, Bi₃Ti_1.5W_0.5O₉, for which the unit cell parameters a = 5.372(5) Å, b = 5.404(4) Å, and c = 24.95(2) Å are determined in this study. The other two compounds, namely, Na_0.75Bi_2.25Nb_1.5W_0.5O₉ with the unit cell parameters a = 5.463(1) Å, b = 5.490(7) Å, and c = 24.78(0) Å and Ca_0.5Bi_2.5Ti_0.5Nb_1.5O₉ with the unit cell parameters a = b = 3.843(2) Å and c = 24.97(6) Å, are synthesized for the first time. The compositions of these compounds are based on the composition of the well-known compound Bi₃TiNbO₉ with a high Curie temperature (T _C = 1223 K), in which bismuth, niobium, and titanium atoms are partially or completely replaced by other atoms. The experimental and calculated interplanar distances determined from the X-ray diffraction patterns of the studied compounds are presented. __________ Translated from Kristallografiya, Vol. 50, No. 1, 2005, pp. 59–64. Original Russian Text Copyright ? 2005 by Geguzina, Shuvaev, Shuvaeva, Shilkina, Vlasenko.     

Digitally alloyed modulated precursor flow epitaxial growth of AlxGa1−xN layers with AlN and AlyGa1−yN monolayers

We propose a new growth scheme of digitally alloyed modulated precursor flow epitaxial growth (DA-MPEG) using metalorganic and hydride precursors for the growth of Al_xGa_1−xN layers with high-Al content at relatively low temperatures. The growth of high-quality, high-Al content Al_xGa_1−xN layers (x_Al>50%) that are composed of AlN and Al_yGa_1−yN monolayers on AlN/sapphire template/substrates by DA-MPEG was demonstrated. The overall composition of the ternary Al_xGa_1−xN material by DA-MPEG can be controlled continuously by adjusting the Column III mole fraction of the atomic Al_yGa_1−yN sub-layer. X-ray diffraction and optical transmittance results show that the AlGaN materials have good crystalline quality. The surface morphology of DA-MPEG AlGaN samples measured by atomic force microscopy are comparable to high-temperature-grown AlGaN and are free from surface features such as nano-pits.     

Vapour epitaxial growth and characterization of InAs1-xPx

The vapour growth of InAs_1-xP_x layers has been carried out by the hydride process. The phosphorus rich part of the system (0.7 ? x ? 1) was especially investigated. Heteroepitaxial deposits of InAs_1-xP_x and InP have been performed on substrates such as InAs, GaAs and GaP. A systematic study of the influence of the substrate orientation on the quality of the layer has been carried out by growth on hemispherical substrates. Preferential planes have been pointed out: (100) and (111) A for InAs, (111) for GaAs and GaP. The band gap variation as a function of the composition has been determined by photoluminescence at 4.2 °K and X-ray diffraction measurements. It fits the equation: E_G(x) eV = 0.425 + 0.722 x + 0.273 x² at 4.2 °K.     

Precipitation of In2O3 nano-crystallites from glasses in the system Na2O/B2O3/Al2O3/In2O3

Glasses in the system Na₂O/B₂O₃/Al₂O₃/In₂O₃ were melted and subsequently tempered in the range from 500 to 700 °C. Depending on the chemical composition, various crystalline phases were observed. From samples without Al₂O₃, In₂O₃ could not be crystallized from homogeneous glasses, because either spontaneous In₂O₃ crystallization occurred during cooling, or other phases such as NaInO₂ were formed during tempering. The addition of alumina, however, controlled the crystallization of In₂O₃. Depending on the crystallization temperature applied, the crystallite sizes were in the range from 13 to 53 nm. The glass matrix can be dissolved by soaking the powdered glass in water. This procedure can be used to prepare nano-crystalline In₂O₃-powders.