烧结工艺对原位合成ZrO2/TiB2复合陶瓷材料的力学性能影响

以TiC和B4C为原料反应生成TiB2,原位合成了TiB2含量为20％的ZrO2/TiB2复合陶瓷材料.分析了烧结工艺中烧结温度、保温时间和烧结压力对力学性能的影响.结果表明:当烧结温度由1650℃提高到1750℃时,复合陶瓷材料的抗弯强度由820 MPa增加到980 MPa,断裂韧性从7.2 MPa·m1/2提高到9.4 MPa·m12;当烧结温度升至1850℃时,抗弯强度和断裂韧性下降;显微硬度随烧结温度的升高而提高.在烧结温度1750℃压力为30MPa保温时间由30 min提高到45 min时,断裂韧性从8.6 MPa·m1/2提高到9.4 MPa·m1/2;保温时间增加至60 min时,断裂韧性下降;保温时间的变化对材料的抗弯强度、硬度影响不大.烧结压力对复合陶瓷材料的力学性能的影响较小.当烧结参数为1750℃、45 min、30MPa,ZrO2/TiB2复合陶瓷材料的抗弯强度、显微硬度、断裂韧性分别达到980 MPa、13.6 GPa、9.4 MPa·m1/2.     

c-BN含量对(Ti,W)C/WC/Co金属陶瓷刀具材料力学性能的影响

采用真空热压烧结工艺制备了(Ti,W)C/WC/c-BN/Co金属陶瓷刀具材料,分析了(Ti,W)C/WC/c-BN/Co金属陶瓷刀具材料的微观结构、元素成分和物相组成,研究了不同含量c-BN对(Ti,W)C/WC/c-BN/Co金属陶瓷刀具材料微观结构和力学性能的影响.研究结果表明:适量添加c-BN 能有效细化颗粒,减少气孔等缺陷,提高材料的相对密度,(Ti,W)C/WC/c-BN/Co金属陶瓷刀具材料的断裂模式为穿/沿晶混合断裂模式;当c-BN含量为1wt;时,(Ti,W)C/WC/c-BN/Co金属陶瓷刀具的综合力学性能最优,其抗弯强度、断裂韧性和维氏硬度分别为769.32±10.21 MPa、6.69±0.18 MPa·m1/2和22.83±0.46 GPa.     

低温烧结3Y-TZP陶瓷的研究

以不同质量分数的MnO2-TiO2(质量比为1:1)为烧结助剂,在1300～1500 ℃下低温烧结制备了3Y-TZP陶瓷.对3Y-TZP陶瓷的相对密度、物相及显微结构、显微硬度、抗弯强度及断裂韧性进行了测试分析,并对烧结助剂的基本性能进行了表征.探究了烧结助剂及烧结温度对3Y-TZP陶瓷性能的影响.实验结果表明:在3Y-TZP陶瓷中加入烧结助剂MnO2-TiO2(质量比为1:1)可以实现低温烧结.试样的相对密度、显微硬度、抗弯强度、断裂韧性随烧结温度的升高先增大后降低.在烧结助剂为0.5wt;,烧结温度为1350 ℃时,试样的相对密度及力学性能都达到最大,在此条件下,试样的相对密度达97.16;,显微硬度为2032.8 HV,抗弯强度为300 MPa,断裂韧性为8.35 MPa· m1/2,且试样的断裂方式为晶粒拔出及晶粒断裂遵循着穿-沿晶断裂的模式,且晶粒极小.     

热压烧结制备羟基磷灰石/透辉石陶瓷复合材料

采用热压烧结方法制备了羟基磷灰石/透辉石复相陶瓷材料,分析了羟基磷灰石基体与透辉石之间的界面结合、扩展及渗透过程,测试了复合材料的断裂韧性、硬度、抗弯强度与添加剂含量的对应关系,并对复相陶瓷材料的微观结构与力学性能进行了研究.结果表明:在1320℃,28MPa条件下热压烧结制备的复相陶瓷材料,其抗弯强度、断裂韧性均有明显提高,抗弯强度达到90MPa,断裂韧性达到1.07MPa·m1/2.     

Yb2O3-Al2O3烧结助剂对气压烧结氮化硅陶瓷性能的影响

以Yb2O3-Al2O3体系为烧结助剂,采用气压烧结法制备了氮化硅陶瓷.研究了烧结温度对气压烧结氮化硅陶瓷的致密度、失重率、物相、力学性能与显微结构的影响及材料的烧结机理.结果表明:随着烧结温度的升高,氮化硅的致密度、抗弯强度、断裂韧性和硬度均呈现先增加后降低的趋势,而失重率呈现一直升高的趋势;当烧结温度为1780℃、烧结气压为6 MPa时,所得氮化硅烧结体的体积密度(3.31 g·cm-3)、抗弯强度(967.2)、断裂韧性(8.9 MPa·m1/2)和硬度(17.1 GPa)达最大值,晶粒以长柱状的β相为主;烧结温度高于或等于1700℃时,材料中的α相可完全转化为β相,β-Si3 N4晶粒的平均长径比达12.31.     

以透辉石为烧结助剂的Al2O3陶瓷的力学性能和显微结构

利用无压烧结方法制备了添加透辉石的Al2O3基陶瓷,研究了烧结温度和保温时间对Al2O3基陶瓷的相对密度、硬度、抗弯强度和断裂韧性的影响,探讨了烧结工艺参数对Al2O3陶瓷力学性能和微观结构的影响.结果表明,Al2O3陶瓷的力学性能随烧结温度和保温时间变化趋势与材料密度的变化趋势一致;添加透辉石的Al2O3陶瓷在1520 ℃烧结140 min时,具有最佳的综合力学性能;显微结构分析表明,Al2O3陶瓷的力学性能受到其气孔率、晶粒发育情况和断裂模式的影响.     

添加纳米Ti(C7N3)的ZrO2基纳米陶瓷模具材料

本文针对模具对陶瓷材料的要求,从提高陶瓷模具材料的综合力学性能出发,采用纳米复合方法制备出具有较高综合力学性能的纳米陶瓷模具材料.研究了纳米Ti(C7N3)和Y2O3的组分含量对纳米陶瓷模具材料微观结构和力学性能的影响,结果表明添加纳米Ti(C7N3)和Y2O3的氧化锆纳米陶瓷模具材料的力学性能优于纯氧化锆陶瓷材料,纳米颗粒的添加改善了材料的微观结构和力学性能.当纳米Ti(C7N3)和Y2O3的添加量分别为17.15vol;和5 mol;时,材料的综合性能最好,其抗弯强度为814MPa、断裂韧性6.35 MPa· m1/2、维氏硬度11.87 GPa.     

MF/纳米ZrO_2增韧氧化铝陶瓷复合材料的力学性能

选用莫来石纤维(MF)和纳米ZrO2为增强体制备了MZTA复合增韧氧化铝陶瓷复合材料。通过设计正交试验讨论了MF含量、nano-ZrO2含量、烧结温度、保温时间等因素对材料力学性能的影响,利用扫描电镜、能谱分析仪研究了陶瓷复合材料的微观结构与性能的关系。结果表明:当莫来石纤维和纳米ZrO2的质量分数分别为10%,烧结温度为1550℃,保温时间为30 min,陶瓷复合材料的抗弯强度、断裂韧性分别达到712 MPa、10.05 MPa.m1/2,与纯Al2O3陶瓷相比晶粒细化、力学性能显著提高;纤维的拔出、桥联、裂纹扩展路径偏转、沿晶断裂等消耗了大量的断裂能、缓和了裂纹尖端的应力是材料断裂韧性提高的主要原因。     

原位热压烧结制备NbC增强Nb4AlC3复合材料及其力学性能研究

以Nb、Al、石墨粉为原料,采用原位反应热压烧结在1700℃下制备出了致密的NbC增强Nb4AlC3复合材料,采用X射线衍射和扫描电镜对材料的物相组成和显微结构进行了表征,研究了NbC含量对材料的物相组成、烧结性能、显微结构与力学性能的影响.结果表明:NbC的原位引入促进了材料的烧结,并对Nb4AlC3基体起到了显著的强韧化效果.随着NbC含量从0增加至15vol;,材料的抗弯强度和断裂韧性先增大后减小.当NbC含量为8vol;时,强度和断裂韧性达到最大值494 MPa和8.4 MPa·m1/2.材料的显微硬度则由2.6 GPa提高至4.4 GPa.     

热压烧结制备BN-MgAlON复合材料及其力学性能研究

以BN-MgAlON复合粉体为原料,Y2O3为烧结助剂,在N2气氛下热压烧结制备了BN-MgAlON复合材料,用X射线衍射和扫描电镜对材料的物相组成和显微结构进行了表征,研究了烧结温度对材料的物相组成、烧结性能和力学性能的影响.结果表明,在1650～1750℃可制备出致密的BN-MgAlON复合材料.材料主要成分为MgAlON、Sialon、BN和CaYAl3O7,随烧结温度的提高,MgAlON的衍射峰逐渐增强.1750℃下所得材料结构均匀致密,材料中Al、Mg、O、N分布比较均匀.材料的抗弯强度、断裂韧性和显微硬度均随着烧结温度的升高而提高.1750℃下的材料性能最好,其体积密度为2.79 g·cm-3,显气孔率为0.3;,抗弯强度为283 MPa,断裂韧性为3.85 MPa·m1/2,硬度为15.33 GPa.并且1750cc,恒温1h条件下烧结的得到的BN-MgAlON复合材料的抗冲刷性和耐磨性均远远优于耐磨钢B-hard-450.     

Modelling of mechanism of agglomeration of KCl crystallization

The article presents an analysis into agglomeration during KCl vacuum crystallization. The theoretical and experimental investigations into the mechanism of agglomeration during mass crystallization result in an extension of the growth phenomena within the known model equations. The basis for this is essentially constituted by the collision model concepts of the theory of floculation in disperse systems. The parameters derived from the microprocess analysis (energy dissipation, content of solids, growth rate of individual grains) lead to model equations which are confirmed by laboratory and test trials.     

Relationship of Morphological Types of Dynamic Forms of Crystals

Crystallography Reports - The relationship of morphological spectra (sets of data on the morphological types of real polyhedral crystals and their probabilities under current physicochemical...     

A review of measurement of thermophysical properties of silicon melt

Measurements of thermophysical properties of Si melt and supplementary study of X-ray scattering/diffraction by the authors' group were reviewed. The values obtained differed variously from those of literature. Density was 2–3% larger, surface tension 20–30% smaller, viscosity up to 40% larger, electrical conductivity 8% smaller, spectral emissivity more or less in good agreement with literature values, and thermal diffusivity a few percent larger. An anomalous density jump was found near the melting point. Surface tension and viscosity also showed anomaly. A strange time-dependent change of density was observed over 3 h after melting. X-ray analyses suggested a slight change in local atom ordering, but showed no sign of cluster formation. An addition of 0.1 at% gallium caused the density jump to disappear, while that of boron caused no change. An EXAFS study of the former melt indicated a strong interaction between Ga and Si atoms as if molecules of GaSi₃ existed. The implications of the measured properties are a possibility of soft-turbulence in an Si melt in a relatively large crucible, a more complicated manner of intake of oxygen depleted molten Si from the free surface region to underneath the growing crystal, and a relaxation of the melt after melting arising from trapped gas species.     

Generation of crystal structures of heteromolecular compounds by the method of discrete modeling of packings

Within the method of discrete modeling of packings, an algorithm of generation of possible crystal structures of heteromolecular compounds containing two or three molecules in the primitive unit cell, one of which has an arbitrary shape and the other (two others) has a shape close to spherical, is proposed. On the basis of this algorithm, a software package for personal computers is developed. This package has been approved for a number of compounds, investigated previously by X-ray diffraction analysis. The results of generation of structures of five compounds—four organic salts (with one or two spherical anions) and one solvate—are represented.     

Development of Pauling's concepts of geometric characteristics of atoms

The evolution of the geometric characteristics introduced by Pauling and their dependence on the specific features of the structure and chemical bonds have been considered. The values of the covalent and van der Waals radii are given as well as their relationships and mutual transitions.     

Velocities of Disappearance and Lifetime of Faces of Growing Crystals

The formulae for absolute R_disap and relative R velocities of disappearance and lifetime τ of faces of growing crystals have been derived for stationary growth. It was shown that the quantities are determined by the relative growth velocity R_A/R_critA of the vanishing face A with respect to the critical growth velocity R_critA and by the geometry of a crystal expressed by the trigonometric functions of interfacial angles β and γ formed between face A and the adjacent faces. R increases and τ decreases with the increase in R_A/R_critA to certain limiting values. The calculations have been verified and illustrated by the experimental results for triclinic potassium bichromate (KBC) crystals. Results enable ones to predict values of velocities of disappearance and lifetimes of undesirable, supplementary faces of any real crystal.     

Dependence of the parameters of equations of viscous flow on chemical composition of silicate melts

The temperature dependence of viscosity of silicate melts is discussed in the framework of the Avramov–Milchev (AM) equation. The composition is described by means of two parameters: the molar fraction, x, and the “lubricant fraction”, l. The molar fraction is the sum of the molar parts x_i of all oxides dissolved in SiO₂, the molar fraction of the latter being 1 ? x. It is shown that, with sufficient precision, two of the parameters of the AM equation can be presented as unique functions of the molar fraction. On the other hand, x is not sufficient to determine properly the reference temperature T_r , at which viscosity is η_r = 10¹³ [dPa.s]. Therefore, additional parameter, “lubricant fraction” l, is introduced. For each of the components, l_i is a product of molar part x_i and a specific dimensionless coefficient 0 ≤ k_i ≤ 1 accounting for the specific contribution of this component to the increased mobility of the system. It is demonstrated that, for l > 0, the reference temperature is related to the “lubricant fraction” l through the reference temperature T_r,SiO2 of pure SiO₂.     

Comparative analysis of two methods of calculation of the orientation of domain walls in ferroelastics

Two types of domain-wall equations are analyzed: the equations derived by the Sapriel method and the equations obtained by interface matching of the thermal-expansion tensor. It is shown that, for W-type domain walls, these methods yield the same equations. For W′-type domain walls, the equations obtained by different methods coincide for proper ferroelastics and differ for improper ferroelastics.