MgO-CeO2烧结助剂对高SiC含量SiC基复相陶瓷致密性与导热性能的影响

以MgO-CeO2为烧结助剂,采用热压烧结工艺在1850C制备了SiC含量为80wt;的SiC-AlN复相陶瓷.研究了不同助剂含量对复相陶瓷致密性与导热性能的影响.结果表明:适量的烧结助剂能够对SiC-AlN复相陶瓷起到促进烧结作用.烧结助剂含量为6wt;时,样品显气孔率偏大;当助剂含量提高至8wt;～14wt;时,样品显气孔率显著降低,能够完全烧结致密化.复相陶瓷在烧结助剂含量为1Owt;时获得最佳的致密性,其显气孔率仅为0.14;.在烧结助剂含量为8wt;时,样品具有最高的热导率51.72 W·m-1·K-1.复相陶瓷的热导率主要受样品致密性和晶界相的影响,不足或过量的烧结助剂都会使样品的热导率降低.     

微波烧结制备铁酸铋陶瓷的介电性和铁电性

采用微波烧结法制备铁酸铋多铁陶瓷,研究了微波烧结时间对其显微结构、介电性和铁电性的影响.结果表明:在4 kW下烧结35～40 min制备出基本为纯相的铁酸铋陶瓷;随烧结时间增加,铁酸铋陶瓷结构越来越致密,晶粒尺寸有一定程度增大;在-10～90℃范围内,介质损耗随烧结时间增加而增大;随微波烧结时间增加,剩余极化强度增大,而矫顽场强先增加后减小,且铁电性具有明显的频率依赖性;铁酸铋陶瓷的漏电流随微波烧结时间增加而减小,这是结构致密化的结果.     

以MH2(M=Ti,Zr)为原料反应烧结制备MB2-SiC复相陶瓷

分别以TiH2,ZrH2为原料,结合原位反应与脉冲电流辅助烧结制备了TiB2-SiC及ZrB2-SiC复相陶瓷.研究发现,所制备的复相陶瓷表现出一定的织构化现象,TiB2及ZrB2晶粒在反应烧结过程中其(001)面沿垂直压力和电流方向生长.金属氢化物粉体的粒径大小对复相陶瓷的致密化及微结构有较大影响:粒径越小越有利于陶瓷的致密化和硼化物晶粒的定向生长.由于金属硼化物的定向,复相陶瓷的机械性能表现出各向异性.TiB2-SiC复相陶瓷具有较高的断裂韧性,最高可达7.3 MPa·m1/2,而ZrB2-SiC复相陶瓷具有更高的抗弯强度(937 MPa).     

Y2O3添加对Yb2Si2O7无压烧结致密化的影响

以Yb2O3粉末和溶胶-凝胶法制备的活性SiO2凝胶为原料,在1550℃保温4h合成了具有单斜结构的单相Yb2Si2O7粉体.采用无压烧结方法获得了Yb2Si2O7陶瓷.通过添加Y2O3烧结助剂,获得了气孔率为3.2;的致密Yb2Si2O7陶瓷.采用XRD、SEM方法对烧结体的结构、成分和形貌进行测试与表征.结果表明:烧结体均为单相的Yb2Si2O7,不含其它杂质相.Y2O3的添加大大降低了烧结体的气孔率,促进了烧结的致密化.所得致密Yb2Si2O7陶瓷的平均晶粒尺寸为1～2 μm,大部分晶粒为颗粒状晶粒.     

Y2O3-SiO2助剂对常压烧结SiC-AlN复相材料烧结性能的影响

SiC∶AlN以质量比1∶1,添加不同质量分数Y2O3-SiO2(摩尔比为2.9∶7.1)复合烧结助剂,分别在氢气和氩气气氛下常压烧结制备SiC-A1N复相材料.研究烧结气氛、烧成温度和Y2O3-SiO2含量对该复相材料烧结性能的影响.结果表明,与氢气气氛相比,氩气气氛下烧结体更易致密;1650 ～1850℃,随着烧结温度升高,烧结致密性明显提高.氩气气氛1850C下保温1h,Y2O3-SiO2复合助剂含量为9.09wt;,烧结体的显气孔率可低于0.15;,晶粒尺寸均匀且连接紧密.烧结过程中,Y2O3、SiO2烧结助剂与AlN表面的Al2O3在一定温度下形成液相有助于样品致密化.Y2O3与AlN表面的Al2O3反应生成钇铝石榴石(Y3Al5O12),SiO2高温下主要形成玻璃相.SiC-AlN复相材料是由主晶相6H-SiC和AlN,次晶相Y3Al5O12组成.     

助烧剂与脱胶工艺对微波烧结Al2O3陶瓷性能的影响

采用微波烧结方式制备Al2O3陶瓷,研究了助烧剂含量和素坯脱胶工艺对Al2O3陶瓷微观组织和力学性能的影响.研究结果表明:相较于传统无压烧结,微波烧结有利于降低Al2O3陶瓷的烧结温度,并提高致密度和力学性能.脱胶后烧结体晶粒结合更加紧密,界面结合强度有明显提高,断裂模式以穿晶断裂为主.当MgO与Y2O3添加量为0.7wt;时,Al2O3陶瓷致密度稳定在99.1;以上,断裂韧度和维氏硬度分别达到4.9 MPa·m1/2和17.0 GPa.     

Al2O3加入量对AlN-Al2O3复相陶瓷制备及性能的影响

以AlN和Al2O3为原料,Y2O3为烧结助剂,N2气氛下在1650 ℃下热压烧结制备出了AlN-Al2O3复相陶瓷;采用X射线衍射、扫描电子显微镜和透射电子显微镜等对复相材料的相组成、显微结构进行表征.研究了Al2O3加入量对AlN-Al2O3复相材料的强度、热导率和介电性能的影响.结果表明,Al2O3加入量的增加可促进材料的烧结致密化和抑制AlN基体晶粒的生长.Al2O3含量为20 wt;和30 wt;时可制得致密的AlN-Al2O3复相陶瓷.Al2O3利用其高强度和弥散强化作用对AlN基体起到了明显的增强效果.随着Al2O3加入量的增加,试样的抗弯强度显著提高,热导率和介电性能也得到改善.加入30 wt; Al2O3的复相陶瓷的抗弯强度和热导率达到最大值457 Mpa和57 W/(m·K),介电常数和介电损耗达到最低值9.32和2.6×10-4.当Al2O3含量达到40 wt;以后,材料中部分AlN与Al2O3反应生成AlON,从而使材料的抗弯强度、热导率和介电性能又明显下降.     

常压烧结Mg2SiO4-SiC复相材料的微波衰减性能

以Mg2SiO4和SiC为原料,Al2O3-BaO-SiO2作为复合烧结助剂,H2气氛下在1450℃下保温1h常压烧结制备出了Mg2SiO4-SiC复相微波衰减材料;采用X射线衍射、扫描电子显微镜对复相材料的相组成、显微结构进行表征.研究了SiC添加量对复相材料X波段(8～ 12 GHz)微波衰减性能的影响.结果表明:通过加入一定量的Al2O3BaO-SiO2复合烧结助剂能有效促进烧结致密化,复相材料的显气孔率均在0.5;以下;SiC含量从0增加到10;,复相材料谐振频率由11.8 GHz递减到10.0 GHz,衰减峰值的绝对值由3.62 dB递减到1.18 dB,有效衰减带宽由0.48 GHz递增到1.03 GHz,随着SiC含量的增加,谐振频率向低频移动,衰减峰绝对值降低,有效衰减带宽增大.     

AlN含量对SiC基复相陶瓷性能的影响

以MgO-CeO2为烧结助剂,采用热压烧结工艺在1850℃下制备了SiC基复相陶瓷.研究了不同AlN含量对复相陶瓷致密性与导热性能的影响.结果表明:不添加AlN时,试样致密性最差,气孔率和体积密度分别为4.71;和2.43 g/cm3.AlN含量升高至5wt;时,试样致密性有所提高.AlN含量进一步升高至10wt;～20wt;,试样完全致密,气孔率和体积密度分别保持在0.20;和3.31 g/cm3.在AlN含量为10wt;时,样品具有最高的热导率51.62 W·m-1·K-1,同时弯曲强度和断裂韧性达到顶点,分别为731.3 MPa和7.3 MPa·m1/2.     

ZnO-B2O3玻璃对0.95(Mg0.9Zn0.1)TiO3-0.05CaTiO3陶瓷烧结特性和微波介电性能的影响

采用传统的固相烧结工艺制备0.95(Mg0.9Zn0.1) TiO3-0.05CaTiO3陶瓷.研究了ZnO-B2O3玻璃掺杂对0.95(Mg0.9Zn0.1)TiO3-0.05CaTiO3陶瓷烧结特性、晶相成分、微观结构和微波介电性能的影响.适量的ZnO-B2O3玻璃掺杂能有效地降低烧结温度,促进致密化,从而提高微波介电性能.随着烧结温度的升高,密度、介电常数εr和Q×f值均达到最大值之后再逐渐减小.当ZnO-B2O3玻璃添加量为5wt;时,0.95(Mg0.9Zn0.1) TiO3-0.05CaTiO3陶瓷在1075℃烧结3h,获得最佳微波介电性能:εr=19.5,Q×f=62100 GHz,τf=-13 ppm/℃.     

Modelling of mechanism of agglomeration of KCl crystallization

The article presents an analysis into agglomeration during KCl vacuum crystallization. The theoretical and experimental investigations into the mechanism of agglomeration during mass crystallization result in an extension of the growth phenomena within the known model equations. The basis for this is essentially constituted by the collision model concepts of the theory of floculation in disperse systems. The parameters derived from the microprocess analysis (energy dissipation, content of solids, growth rate of individual grains) lead to model equations which are confirmed by laboratory and test trials.     

Relationship of Morphological Types of Dynamic Forms of Crystals

Crystallography Reports - The relationship of morphological spectra (sets of data on the morphological types of real polyhedral crystals and their probabilities under current physicochemical...     

Velocities of Disappearance and Lifetime of Faces of Growing Crystals

The formulae for absolute R_disap and relative R velocities of disappearance and lifetime τ of faces of growing crystals have been derived for stationary growth. It was shown that the quantities are determined by the relative growth velocity R_A/R_critA of the vanishing face A with respect to the critical growth velocity R_critA and by the geometry of a crystal expressed by the trigonometric functions of interfacial angles β and γ formed between face A and the adjacent faces. R increases and τ decreases with the increase in R_A/R_critA to certain limiting values. The calculations have been verified and illustrated by the experimental results for triclinic potassium bichromate (KBC) crystals. Results enable ones to predict values of velocities of disappearance and lifetimes of undesirable, supplementary faces of any real crystal.     

Development of Pauling's concepts of geometric characteristics of atoms

The evolution of the geometric characteristics introduced by Pauling and their dependence on the specific features of the structure and chemical bonds have been considered. The values of the covalent and van der Waals radii are given as well as their relationships and mutual transitions.     

Comparative analysis of two methods of calculation of the orientation of domain walls in ferroelastics

Two types of domain-wall equations are analyzed: the equations derived by the Sapriel method and the equations obtained by interface matching of the thermal-expansion tensor. It is shown that, for W-type domain walls, these methods yield the same equations. For W′-type domain walls, the equations obtained by different methods coincide for proper ferroelastics and differ for improper ferroelastics.     

Dependence of the parameters of equations of viscous flow on chemical composition of silicate melts

The temperature dependence of viscosity of silicate melts is discussed in the framework of the Avramov–Milchev (AM) equation. The composition is described by means of two parameters: the molar fraction, x, and the “lubricant fraction”, l. The molar fraction is the sum of the molar parts x_i of all oxides dissolved in SiO₂, the molar fraction of the latter being 1 ? x. It is shown that, with sufficient precision, two of the parameters of the AM equation can be presented as unique functions of the molar fraction. On the other hand, x is not sufficient to determine properly the reference temperature T_r , at which viscosity is η_r = 10¹³ [dPa.s]. Therefore, additional parameter, “lubricant fraction” l, is introduced. For each of the components, l_i is a product of molar part x_i and a specific dimensionless coefficient 0 ≤ k_i ≤ 1 accounting for the specific contribution of this component to the increased mobility of the system. It is demonstrated that, for l > 0, the reference temperature is related to the “lubricant fraction” l through the reference temperature T_r,SiO2 of pure SiO₂.     

A review of measurement of thermophysical properties of silicon melt

Measurements of thermophysical properties of Si melt and supplementary study of X-ray scattering/diffraction by the authors' group were reviewed. The values obtained differed variously from those of literature. Density was 2–3% larger, surface tension 20–30% smaller, viscosity up to 40% larger, electrical conductivity 8% smaller, spectral emissivity more or less in good agreement with literature values, and thermal diffusivity a few percent larger. An anomalous density jump was found near the melting point. Surface tension and viscosity also showed anomaly. A strange time-dependent change of density was observed over 3 h after melting. X-ray analyses suggested a slight change in local atom ordering, but showed no sign of cluster formation. An addition of 0.1 at% gallium caused the density jump to disappear, while that of boron caused no change. An EXAFS study of the former melt indicated a strong interaction between Ga and Si atoms as if molecules of GaSi₃ existed. The implications of the measured properties are a possibility of soft-turbulence in an Si melt in a relatively large crucible, a more complicated manner of intake of oxygen depleted molten Si from the free surface region to underneath the growing crystal, and a relaxation of the melt after melting arising from trapped gas species.     

Generation of crystal structures of heteromolecular compounds by the method of discrete modeling of packings

Within the method of discrete modeling of packings, an algorithm of generation of possible crystal structures of heteromolecular compounds containing two or three molecules in the primitive unit cell, one of which has an arbitrary shape and the other (two others) has a shape close to spherical, is proposed. On the basis of this algorithm, a software package for personal computers is developed. This package has been approved for a number of compounds, investigated previously by X-ray diffraction analysis. The results of generation of structures of five compounds—four organic salts (with one or two spherical anions) and one solvate—are represented.