烧结助剂及β-Si3N4添加量对多孔氮化硅陶瓷性能的影响

通过添加不同烧结助剂(Lu2O3、Y2O3和Al2O3)及β-Si3N4粉末含量,采用常压烧结工艺制备出性能优异的多孔氮化硅陶瓷.研究了烧结助剂种类及β-Si3N4添加量对多孔氮化硅陶瓷物相、微观组织和力学性能的影响.结果表明:当Lu2O3添加量为5 wt;、β-Si3N4为3 wt;时,制备了由长柱状β-Si3N4晶粒组成、平均长径比为6.87、直径为0.6μm长度为4.4～10.4 μm的多孔氮化硅陶瓷,其抗弯强度可达330.7 MPa.β-Si3N4添加量至5 wt;时,柱状晶粒发育良好,长径比增加至7以上,气孔率高达48;,但抗弯强度下降.     

多孔氮化硅陶瓷的微观结构、力学性能和气体透气性的研究

本研究中,以石油焦为造孔剂、Y2O3-Al2O3为烧结助剂,通过注浆成型制备出多孔氮化硅陶瓷.研究石油焦的加入量对多孔氮化硅陶瓷微观结构、力学性能及气体透气性的影响.结果表明:多孔氮化硅陶瓷的微孔是由长棒状的β-Si3N4晶粒互相搭接而成,大孔是由石油焦燃烧而成.随着石油焦加入量的增加,气孔率及达西渗透系数(μ)增大,但试样的抗弯强度降低.在起始α-Si3N4粉末中添加10wt;～50wt;石油焦、5wt; Y2O3-3wt;Al2O3 1800℃下保温2h制备出气孔率为37.08;～59.40;、抗弯强度为52.00～154.27 MPa、μ值为(3.04 ～6.87)×10-13m2的多孔氮化硅陶瓷.     

以β-Si3N4为晶种多孔氮化硅陶瓷的制备

以β-Si3N4为晶种、α-Si3N4为原料、Mgo-Al2O3-SiO2体系为烧结助剂,制备了气孔率约为30;的多孔氮化硅陶瓷,研究了β-Si3N4晶种添加量对其物相、微观形貌和弯曲强度的影响.结果表明,加入β-Si3N4晶种能有效地促进α-Si3N4转化为β-Si3N4,经1580℃烧结的氮化硅陶瓷中出现了明显的长柱状晶粒,随着晶种添加量的增加,柱状晶的长径比逐渐增大,且柱状晶的产生可提高材料的强度.     

淀粉固结工艺制备多孔氮化硅基陶瓷复合材料

本文以氮化硅,氮化硼,二氧化硅作为陶瓷基体材料,通过淀粉固结工艺,采用常压部分氧化烧结制备了氮化硅基多孔陶瓷。通过Zeta电位测试确定了制备陶瓷坯体的最佳pH值在9.42~10.76之间。混合浆料的浆料流变性能测试表明陶瓷浆料体系呈现剪切变稀特征。XRD分析结果表明在烧结样品组成成分为α-Si3N4、β-Si3N4、BN、Quartz low,sys以及Moganite。SEM的显示氮化硅基多孔陶瓷呈现片层型微观结构。显气孔率随淀粉含量增加而增加,试验制得多孔陶瓷显气孔率最大值高达73.2%。     

冰模板法制备反应结合多孔Si3N4/SiC复相陶瓷

以微米级SiC和Si粉为原料,采用冰模板法和氮化反应烧结法制备了孔道中修饰α-Si3N4、Si2N2O纳米线的β-Si3N4结合多孔SiC复相陶瓷.研究了反应烧结温度、SiC/Si比和固相含量对多孔陶瓷的物相结构、形貌、孔分布和压缩强度的影响.结果表明:多孔陶瓷具有层状定向通孔结构,孔隙率介于50; ～ 70;之间,孔径分布呈现双峰分布特点;当烧结温度达到1350℃以上时,在层状孔道中交织形成α-Si3N4和Si2N2O纳米线的网络结构.反应温度超过1450℃时,通过液态Si的氮化反应原位形成β-Si3N4结合相将SiC颗粒粘结起来;当浆料中Si含量由16wt;增加至33wt;时,多孔陶瓷的开气孔率从69.78;降至62.64;,而压缩强度由2.2 MPa提高到8.73 MPa;随着浆料固相体积含量从25;增加到45;,多孔陶瓷的气孔率从71.81;降至54.85;,同时压缩强度从4.99 MPa提高到24.16 MPa.     

稻壳灰制备Si3N4/SiC复合粉体的研究

本文主要研究不同的SiO2∶C比例对所制备Si3N4/SiC复合粉体组成的影响.采用生物质能电厂所产生的工业废弃物稻壳灰和炭黑为原料,以稻壳灰中的SiO2为标准与炭黑配成不同比例的粉料,在氮气气氛下经1550℃保温3h热处理.采用X射线衍射(XRD)和扫描电子显微镜(SEM)分析烧后试样的物相组成和显微结构.结果表明:当SiO2∶C为5∶6时得到的产物为Si3N4/SiC复合粉体;当SiO2∶C为5∶2和5∶3时,得到产物的组成为SiC、O'-Sialon和β-Si3N4.     

Nd2O3对稻壳合成多孔堇青石陶瓷的影响

用稻壳为硅源和成孔剂,以Nd2O3为添加剂,在1350 ℃烧成了多孔堇青石陶瓷.利用XRD分析了试样在烧结过程中的物相变化,利用SEM观察了烧结试样的显微结构,并测定了烧结试样的抗弯强度、气孔率.结果表明:与未掺Nd2O3的试样相比,掺杂3 wt;Nd2O3后,烧结试样的气孔率无明显变化,但其抗弯强度增加了约4倍,且堇青石的形成温度显著降低.     

Yb2O3-Al2O3烧结助剂对气压烧结氮化硅陶瓷性能的影响

以Yb2O3-Al2O3体系为烧结助剂,采用气压烧结法制备了氮化硅陶瓷.研究了烧结温度对气压烧结氮化硅陶瓷的致密度、失重率、物相、力学性能与显微结构的影响及材料的烧结机理.结果表明:随着烧结温度的升高,氮化硅的致密度、抗弯强度、断裂韧性和硬度均呈现先增加后降低的趋势,而失重率呈现一直升高的趋势;当烧结温度为1780℃、烧结气压为6 MPa时,所得氮化硅烧结体的体积密度(3.31 g·cm-3)、抗弯强度(967.2)、断裂韧性(8.9 MPa·m1/2)和硬度(17.1 GPa)达最大值,晶粒以长柱状的β相为主;烧结温度高于或等于1700℃时,材料中的α相可完全转化为β相,β-Si3 N4晶粒的平均长径比达12.31.     

低温燃烧-烧结法制备多孔Al2O3/ZrO2(Y2O3)陶瓷

用低温燃烧合成的陶瓷粉体为原料,在1450℃下烧结制备了多孔Al2O3/ZrO2 (3mol; Y2O3)陶瓷,并研究ZrO2的外加量(Omol;、1Omol;、15mol;和20mol;)对多孔陶瓷显气孔率、抗弯强度、孔径分布和显微结构的影响.实验结果表明:与其他试样相比,ZrO2外加量为15mol;的试样的显气孔率和抗弯强度都明显提高,其最可几孔径约为1.1 μm.SEM和EBSD图片显示:外加ZrO2能显著影响多孔陶瓷的显微结构,其中外加15mol; ZrO2的多孔陶瓷中,氧化铝晶粒的平均尺寸较小,颈部较厚,这是其具有较高抗弯强度的主要原因.     

高热导率Si3N4陶瓷的高压合成及性能研究

在高温高压条件下(HPHT,4 ～5 GPa,1430 ～1530℃),采用高压烧结技术,利用Y2O3、MgO作为烧结助剂,通过和不同质量配比的氮化硅(a-Si3N4,β-Si3N4)粉体复合,制备了具有高热导率和高致密性的Si3N4陶瓷.本实验采用X射线衍射(XRD)、扫描电子显微镜(SEM)、能谱EDS、热导率测定仪、维氏硬度计对样品进行了分析和表征,研究了压强、烧结温度、保温时间对热导率和致密性的影响.结果 表明:超高压条件有效降低了烧结温度,缩短了烧结时间.当烧结条件在5 GPa,1490℃,1h时,其硬度为16.5 GPa,此时β-Si3N4复合陶瓷的致密化最优,气孔率(0.26;)和晶格缺陷显著改善.研究发现适当的延长烧结时间可以促进晶粒正常长大,同时产生较高的热导率,最高可达到64.6W/(m· K).     

Modelling of mechanism of agglomeration of KCl crystallization

The article presents an analysis into agglomeration during KCl vacuum crystallization. The theoretical and experimental investigations into the mechanism of agglomeration during mass crystallization result in an extension of the growth phenomena within the known model equations. The basis for this is essentially constituted by the collision model concepts of the theory of floculation in disperse systems. The parameters derived from the microprocess analysis (energy dissipation, content of solids, growth rate of individual grains) lead to model equations which are confirmed by laboratory and test trials.     

Relationship of Morphological Types of Dynamic Forms of Crystals

Crystallography Reports - The relationship of morphological spectra (sets of data on the morphological types of real polyhedral crystals and their probabilities under current physicochemical...     

A review of measurement of thermophysical properties of silicon melt

Measurements of thermophysical properties of Si melt and supplementary study of X-ray scattering/diffraction by the authors' group were reviewed. The values obtained differed variously from those of literature. Density was 2–3% larger, surface tension 20–30% smaller, viscosity up to 40% larger, electrical conductivity 8% smaller, spectral emissivity more or less in good agreement with literature values, and thermal diffusivity a few percent larger. An anomalous density jump was found near the melting point. Surface tension and viscosity also showed anomaly. A strange time-dependent change of density was observed over 3 h after melting. X-ray analyses suggested a slight change in local atom ordering, but showed no sign of cluster formation. An addition of 0.1 at% gallium caused the density jump to disappear, while that of boron caused no change. An EXAFS study of the former melt indicated a strong interaction between Ga and Si atoms as if molecules of GaSi₃ existed. The implications of the measured properties are a possibility of soft-turbulence in an Si melt in a relatively large crucible, a more complicated manner of intake of oxygen depleted molten Si from the free surface region to underneath the growing crystal, and a relaxation of the melt after melting arising from trapped gas species.     

Generation of crystal structures of heteromolecular compounds by the method of discrete modeling of packings

Within the method of discrete modeling of packings, an algorithm of generation of possible crystal structures of heteromolecular compounds containing two or three molecules in the primitive unit cell, one of which has an arbitrary shape and the other (two others) has a shape close to spherical, is proposed. On the basis of this algorithm, a software package for personal computers is developed. This package has been approved for a number of compounds, investigated previously by X-ray diffraction analysis. The results of generation of structures of five compounds—four organic salts (with one or two spherical anions) and one solvate—are represented.     

Development of Pauling's concepts of geometric characteristics of atoms

The evolution of the geometric characteristics introduced by Pauling and their dependence on the specific features of the structure and chemical bonds have been considered. The values of the covalent and van der Waals radii are given as well as their relationships and mutual transitions.     

Velocities of Disappearance and Lifetime of Faces of Growing Crystals

The formulae for absolute R_disap and relative R velocities of disappearance and lifetime τ of faces of growing crystals have been derived for stationary growth. It was shown that the quantities are determined by the relative growth velocity R_A/R_critA of the vanishing face A with respect to the critical growth velocity R_critA and by the geometry of a crystal expressed by the trigonometric functions of interfacial angles β and γ formed between face A and the adjacent faces. R increases and τ decreases with the increase in R_A/R_critA to certain limiting values. The calculations have been verified and illustrated by the experimental results for triclinic potassium bichromate (KBC) crystals. Results enable ones to predict values of velocities of disappearance and lifetimes of undesirable, supplementary faces of any real crystal.     

Comparative analysis of two methods of calculation of the orientation of domain walls in ferroelastics

Two types of domain-wall equations are analyzed: the equations derived by the Sapriel method and the equations obtained by interface matching of the thermal-expansion tensor. It is shown that, for W-type domain walls, these methods yield the same equations. For W′-type domain walls, the equations obtained by different methods coincide for proper ferroelastics and differ for improper ferroelastics.     

Dependence of the parameters of equations of viscous flow on chemical composition of silicate melts

The temperature dependence of viscosity of silicate melts is discussed in the framework of the Avramov–Milchev (AM) equation. The composition is described by means of two parameters: the molar fraction, x, and the “lubricant fraction”, l. The molar fraction is the sum of the molar parts x_i of all oxides dissolved in SiO₂, the molar fraction of the latter being 1 ? x. It is shown that, with sufficient precision, two of the parameters of the AM equation can be presented as unique functions of the molar fraction. On the other hand, x is not sufficient to determine properly the reference temperature T_r , at which viscosity is η_r = 10¹³ [dPa.s]. Therefore, additional parameter, “lubricant fraction” l, is introduced. For each of the components, l_i is a product of molar part x_i and a specific dimensionless coefficient 0 ≤ k_i ≤ 1 accounting for the specific contribution of this component to the increased mobility of the system. It is demonstrated that, for l > 0, the reference temperature is related to the “lubricant fraction” l through the reference temperature T_r,SiO2 of pure SiO₂.