MgO含量对CaZrO3-MgO陶瓷烧结特性及组成与结构的影响

采用常压烧结方法制备了CaZrO3-MgO陶瓷.研究了MgO含量对CaZrO3-MgO陶瓷的显气孔率、体积密度、抗弯强度、物相组成、显微结构和断裂方式的影响.结果表明:含有lwt;～3wt; MgO的CaZrO3-MgO陶瓷由CaZrO3单相构成,气孔率低,体积密度高,抗弯强度大,断裂方式为穿晶与沿晶共存的混合断裂;含有20wt; ～40wt; MgO的CaZrO3-MgO陶瓷由MgO和CaZrO3两相构成,气孔率高,体积密度低,抗弯强度小,CaZrO3与MgO两相间的断裂方式为沿晶断裂;当MgO含量为2wt;时CaZrO3-MgO陶瓷的烧结性能最好,当MgO含量为40wt;时CaZrO3-MgO陶瓷的烧结性能最差.少量Mg2+的引入因其向CaZrO3中单向扩散而促进材料烧结,大量Mg2+的引入因其与Zr4+互扩散导致CaZrO3分解而阻碍材料烧结.     

MgO-CeO2烧结助剂对高SiC含量SiC基复相陶瓷致密性与导热性能的影响

以MgO-CeO2为烧结助剂,采用热压烧结工艺在1850C制备了SiC含量为80wt;的SiC-AlN复相陶瓷.研究了不同助剂含量对复相陶瓷致密性与导热性能的影响.结果表明:适量的烧结助剂能够对SiC-AlN复相陶瓷起到促进烧结作用.烧结助剂含量为6wt;时,样品显气孔率偏大;当助剂含量提高至8wt;～14wt;时,样品显气孔率显著降低,能够完全烧结致密化.复相陶瓷在烧结助剂含量为1Owt;时获得最佳的致密性,其显气孔率仅为0.14;.在烧结助剂含量为8wt;时,样品具有最高的热导率51.72 W·m-1·K-1.复相陶瓷的热导率主要受样品致密性和晶界相的影响,不足或过量的烧结助剂都会使样品的热导率降低.     

ZrO2对热压AlN陶瓷的显微结构与力学性能的影响

通过添加纳米ZrO2粉体,并结合Y2O3烧结助剂,采用热压烧结制备了AlN陶瓷.结果表明,加入ZrO2后,热压AlN陶瓷的物相包含AlN主相、Al5Y3O12晶界相以及ZrN新相.随着ZrO2的加入,热压AlN陶瓷的维氏硬度基本没有变化,然而其断裂韧性逐渐提高.这主要是由于添加的ZrO2与AlN发生高温反应生成了ZrN,导致AlN陶瓷从单一的沿晶断裂模式转变为包含沿晶和穿晶的混合断裂模式,强化了晶界,进而改善了断裂韧性.     

WC-ZrO2复合陶瓷显微结构对力学性能的影响

通过调整烧结温度,采用热压烧结方式制备了复合陶瓷刀具材料WC-ZrO2.利用透射电镜(TEM)和扫描电镜(SEM)观察烧结前粉末的分散状态和烧结后试样的显微结构,并对其力学性能进行了测试.试验结果表明,材料在晶粒大小分布范围较小、孔隙率较低、晶界连接较为紧密情况下,力学性能较好.XRD研究发现,烧结过程中有大量四方相ZrO2产生,在冷却过程中有部分单斜相ZrO2出现,说明材料内部产生了相变增韧,促使材料断裂方式从初始的沿晶断裂逐渐过渡到同时有沿晶断裂和穿晶断裂的混合断裂模式.研究得出:材料主要的增韧方式为相变增韧,同时伴有裂纹偏转及分叉等辅助增韧.     

低温烧结3Y-TZP陶瓷的研究

以不同质量分数的MnO2-TiO2(质量比为1:1)为烧结助剂,在1300～1500 ℃下低温烧结制备了3Y-TZP陶瓷.对3Y-TZP陶瓷的相对密度、物相及显微结构、显微硬度、抗弯强度及断裂韧性进行了测试分析,并对烧结助剂的基本性能进行了表征.探究了烧结助剂及烧结温度对3Y-TZP陶瓷性能的影响.实验结果表明:在3Y-TZP陶瓷中加入烧结助剂MnO2-TiO2(质量比为1:1)可以实现低温烧结.试样的相对密度、显微硬度、抗弯强度、断裂韧性随烧结温度的升高先增大后降低.在烧结助剂为0.5wt;,烧结温度为1350 ℃时,试样的相对密度及力学性能都达到最大,在此条件下,试样的相对密度达97.16;,显微硬度为2032.8 HV,抗弯强度为300 MPa,断裂韧性为8.35 MPa· m1/2,且试样的断裂方式为晶粒拔出及晶粒断裂遵循着穿-沿晶断裂的模式,且晶粒极小.     

热压烧结制备AlN/BN复相陶瓷及其性能研究

以氮化铝(AlN)粉和高活性六方氮化硼(h-BN)粉为原料,不添加烧结助剂,采用热压烧结法制备了AlN/BN(20vol;)复相陶瓷.研究了烧结温度(1750～1900℃)对复相陶瓷相对密度、物相组成、显微结构、力学性能、热导率及介电性能的影响.结果表明,在1850℃以上可以制备出相对密度大于98.6;的致密AlN/BN复相陶瓷.试样显微结构均匀,晶粒细小,晶界干净,无明显杂质相,h-BN未形成明显的卡片房式结构.随着烧结温度的提高,试样的相对密度、力学性能、热导率及介电性能(1 MHz)均显著提高.1900℃烧结的试样性能最优,相对密度99.3;,抗弯强度482±42 MPa、断裂韧性4.4±0.4 MPa·m1/2、维氏硬度8.56±0.33GPa、热导率47.2 W·m-1·K-1、介电常数7.64,介电损耗4.62×10-4.     

Al2O3加入量对AlN-Al2O3复相陶瓷制备及性能的影响

以AlN和Al2O3为原料,Y2O3为烧结助剂,N2气氛下在1650 ℃下热压烧结制备出了AlN-Al2O3复相陶瓷;采用X射线衍射、扫描电子显微镜和透射电子显微镜等对复相材料的相组成、显微结构进行表征.研究了Al2O3加入量对AlN-Al2O3复相材料的强度、热导率和介电性能的影响.结果表明,Al2O3加入量的增加可促进材料的烧结致密化和抑制AlN基体晶粒的生长.Al2O3含量为20 wt;和30 wt;时可制得致密的AlN-Al2O3复相陶瓷.Al2O3利用其高强度和弥散强化作用对AlN基体起到了明显的增强效果.随着Al2O3加入量的增加,试样的抗弯强度显著提高,热导率和介电性能也得到改善.加入30 wt; Al2O3的复相陶瓷的抗弯强度和热导率达到最大值457 Mpa和57 W/(m·K),介电常数和介电损耗达到最低值9.32和2.6×10-4.当Al2O3含量达到40 wt;以后,材料中部分AlN与Al2O3反应生成AlON,从而使材料的抗弯强度、热导率和介电性能又明显下降.     

热压工艺对Ti(C,N)基纳米复合金属陶瓷模具材料力学性能与微观结构的影响

采用真空热压烧结工艺制备了Ti(C,N)基纳米复合金属陶瓷模具材料,并研究了该模具材料的力学性能与微观结构.结果表明,当烧结温度为1450℃,保温时间为10 min时,模具材料的硬度、断裂韧性和抗弯强度分别为14.57 GPa、8.6 MPa·m1/2和1144 MPa;当烧结温度为1450℃,保温时间为30 min时,模具材料的硬度、断裂韧性和抗弯强度分别为16.29 GPa、7.53 MPa·m1/2和1035 MPa.在这两种烧结工艺下制备的模具材料均具有良好的综合力学性能,烧结工艺得到优化,可以满足不同硬度材料的成型需求.在对模具材料的微观结构分析时发现,模具材料的断裂方式是以沿晶断裂为主的穿晶与沿晶断裂的混合断裂模式.     

MgO-CaZrO3-ZrO2系含MgO复合陶瓷的结构与烧结性能

以烧结镁砂、单斜氧化锆和实验室预合成锆酸钙为原料,采用常压烧结法制备了MgO-CaZrO3-ZrO2系含MgO复合陶瓷,研究了ZrO2含量、CaZrO3含量及CaZrO3/ZrO2质量比对其复合陶瓷结构与烧结性能的影响.结果表明:高温下Zr4+、Ca2+、Mg2+离子的扩散、c-ZrO2(Zr0.875 Mg0.125 O1.875或Zr0.8 Mg0.2 O1.8)的形成及CaZrO3脱CaO分解等,是影响MgO-CaZrO3-ZrO2系含MgO复合陶瓷结构与烧结性能的重要因素;其中MgO-ZrO2复合陶瓷的断裂方式为穿晶断裂,MgO-CaZrO3复合陶瓷和MgO-CaZrO3-ZrO2复合陶瓷的断裂方式为以沿晶断裂为主的混合断裂,其复合陶瓷的烧结强度依次降低;当ZrO2含量为20wt;～40wt;、CaZrO3含量为10wt;～40wt;及CaZrO3/ZrO2质量比为6/1～5/2时可分别制得烧结性能较好的MgO-ZrO2、MgO-CaZrO3和MgO-CaZrO3-ZrO2复相陶瓷.     

热压烧结制备羟基磷灰石/透辉石陶瓷复合材料

采用热压烧结方法制备了羟基磷灰石/透辉石复相陶瓷材料,分析了羟基磷灰石基体与透辉石之间的界面结合、扩展及渗透过程,测试了复合材料的断裂韧性、硬度、抗弯强度与添加剂含量的对应关系,并对复相陶瓷材料的微观结构与力学性能进行了研究.结果表明:在1320℃,28MPa条件下热压烧结制备的复相陶瓷材料,其抗弯强度、断裂韧性均有明显提高,抗弯强度达到90MPa,断裂韧性达到1.07MPa·m1/2.     

Modelling of mechanism of agglomeration of KCl crystallization

The article presents an analysis into agglomeration during KCl vacuum crystallization. The theoretical and experimental investigations into the mechanism of agglomeration during mass crystallization result in an extension of the growth phenomena within the known model equations. The basis for this is essentially constituted by the collision model concepts of the theory of floculation in disperse systems. The parameters derived from the microprocess analysis (energy dissipation, content of solids, growth rate of individual grains) lead to model equations which are confirmed by laboratory and test trials.     

Relationship of Morphological Types of Dynamic Forms of Crystals

Crystallography Reports - The relationship of morphological spectra (sets of data on the morphological types of real polyhedral crystals and their probabilities under current physicochemical...     

Velocities of Disappearance and Lifetime of Faces of Growing Crystals

The formulae for absolute R_disap and relative R velocities of disappearance and lifetime τ of faces of growing crystals have been derived for stationary growth. It was shown that the quantities are determined by the relative growth velocity R_A/R_critA of the vanishing face A with respect to the critical growth velocity R_critA and by the geometry of a crystal expressed by the trigonometric functions of interfacial angles β and γ formed between face A and the adjacent faces. R increases and τ decreases with the increase in R_A/R_critA to certain limiting values. The calculations have been verified and illustrated by the experimental results for triclinic potassium bichromate (KBC) crystals. Results enable ones to predict values of velocities of disappearance and lifetimes of undesirable, supplementary faces of any real crystal.     

Development of Pauling's concepts of geometric characteristics of atoms

The evolution of the geometric characteristics introduced by Pauling and their dependence on the specific features of the structure and chemical bonds have been considered. The values of the covalent and van der Waals radii are given as well as their relationships and mutual transitions.     

Comparative analysis of two methods of calculation of the orientation of domain walls in ferroelastics

Two types of domain-wall equations are analyzed: the equations derived by the Sapriel method and the equations obtained by interface matching of the thermal-expansion tensor. It is shown that, for W-type domain walls, these methods yield the same equations. For W′-type domain walls, the equations obtained by different methods coincide for proper ferroelastics and differ for improper ferroelastics.     

Dependence of the parameters of equations of viscous flow on chemical composition of silicate melts

The temperature dependence of viscosity of silicate melts is discussed in the framework of the Avramov–Milchev (AM) equation. The composition is described by means of two parameters: the molar fraction, x, and the “lubricant fraction”, l. The molar fraction is the sum of the molar parts x_i of all oxides dissolved in SiO₂, the molar fraction of the latter being 1 ? x. It is shown that, with sufficient precision, two of the parameters of the AM equation can be presented as unique functions of the molar fraction. On the other hand, x is not sufficient to determine properly the reference temperature T_r , at which viscosity is η_r = 10¹³ [dPa.s]. Therefore, additional parameter, “lubricant fraction” l, is introduced. For each of the components, l_i is a product of molar part x_i and a specific dimensionless coefficient 0 ≤ k_i ≤ 1 accounting for the specific contribution of this component to the increased mobility of the system. It is demonstrated that, for l > 0, the reference temperature is related to the “lubricant fraction” l through the reference temperature T_r,SiO2 of pure SiO₂.     

A review of measurement of thermophysical properties of silicon melt

Measurements of thermophysical properties of Si melt and supplementary study of X-ray scattering/diffraction by the authors' group were reviewed. The values obtained differed variously from those of literature. Density was 2–3% larger, surface tension 20–30% smaller, viscosity up to 40% larger, electrical conductivity 8% smaller, spectral emissivity more or less in good agreement with literature values, and thermal diffusivity a few percent larger. An anomalous density jump was found near the melting point. Surface tension and viscosity also showed anomaly. A strange time-dependent change of density was observed over 3 h after melting. X-ray analyses suggested a slight change in local atom ordering, but showed no sign of cluster formation. An addition of 0.1 at% gallium caused the density jump to disappear, while that of boron caused no change. An EXAFS study of the former melt indicated a strong interaction between Ga and Si atoms as if molecules of GaSi₃ existed. The implications of the measured properties are a possibility of soft-turbulence in an Si melt in a relatively large crucible, a more complicated manner of intake of oxygen depleted molten Si from the free surface region to underneath the growing crystal, and a relaxation of the melt after melting arising from trapped gas species.     

Generation of crystal structures of heteromolecular compounds by the method of discrete modeling of packings

Within the method of discrete modeling of packings, an algorithm of generation of possible crystal structures of heteromolecular compounds containing two or three molecules in the primitive unit cell, one of which has an arbitrary shape and the other (two others) has a shape close to spherical, is proposed. On the basis of this algorithm, a software package for personal computers is developed. This package has been approved for a number of compounds, investigated previously by X-ray diffraction analysis. The results of generation of structures of five compounds—four organic salts (with one or two spherical anions) and one solvate—are represented.