不同形貌的钨酸铋纳米材料的制备及其光催化性能

利用水热法通过调节溶液pH值和表面活性剂CTAB浓度制备了不同结构与形貌的钨酸铋纳米材料,用X射线衍射(XRD)、场发射扫描电镜(FESEM)、透射电镜(TEM)等测试方法对产物进行了结构与形貌的表征,并研究了不同结构与形貌的钨酸铋样品对甲基橙的可见光催化降解性能.结果表明,在低pH值时样品为Bi2WO6相纳米片,随着pH值的增加,样品中出现了Bi3.84W0.16O6.24相八面体纳米颗粒,高pH值时,样品则为纯Bi3.84W0.16O6.24相八面体颗粒.随着表面活性剂浓度的增加,Bi2WO6纳米片有自组装的趋势,最终形成花瓣状结构.光催化甲基橙实验结果表明不同形貌的钨酸铋样品对甲基橙有不同的催化降解活性,片状Bi2WO6相纳米片高于Bi3.84W0.16O6.24相八面体颗粒.     

PAN/TiO2复合微粒在可见光下的光催化性能研究

采用水相沉淀法合成聚丙烯腈(PAN),并通过化学吸附法将聚丙烯腈附着在纳米TiO2上,制备得到PAN/TiO2复合微粒.通过在可见光下降解罗丹明B,考察了制备过程中复合比例、热处理时间与温度、分子量对光催化活性的影响.光催化活性较高的制备条件是:AN/TiO2摩尔比为1∶120,热处理时间为30 min,热处理温度为270℃.通过在可见光下降解甲基橙、孔雀石绿等,表明PAN/TiO2复合微粒降解污染物具有普适性.     

可见光响应(001)晶面纳米TiO2光催化剂的制备及性能研究

以钛酸丁酯为钛源,氢氟酸为形貌控制剂,采用水热法合成了具有高表面能(001)晶面的锐钛矿相TiO2纳米材料.利用X射线衍射(XRD)、扫描电镜(SEM)、透射电镜(TEM)及紫外-可见漫反射光谱分析(UV-vis)对样品的形貌、结构和谱学性能进行表征,并以甲基橙溶液为目标污染物,研究其光催化性能和最佳制备条件.结果表明,以氢氟酸为形貌控制剂时,可制备锐钛矿相(001)晶面纳米TiO2纳米材料,能拓宽TiO2体系光响应范围,并具有较高的光催化性能;当反应温度为180.℃、时间为24 h、F/Ti摩尔比为1.5时,样品对甲基橙溶液光催化降解率最高,在紫外光照射条件下1h内降解率可达99.08;,其可见光降解率为66.79;.     

聚乙烯醇改性磷酸银的光催化活性研究

在制备的磷酸银表面吸附少量的聚乙烯醇(PVA),并通过热处理制备了DPVA/Ag3 PO4复合材料.使用傅立叶红外光谱法(FT-IR)和荧光光谱法(PL)对DPVA/Ag3 PO4复合材料进行表征.分析得知,经聚乙烯醇复合改性的DPVA/Ag3 PO4复合微粒中存在共轭结构,光生电子-空穴对复合率降低,光催化活性得到显著提高.研究了不同条件(复合比例、热处理温度、热处理时间)下制备的复合光催化剂在可见光下催化降解甲基橙的光催化性能.当PVA与Ag3 PO4质量比为1:4000,热处理温度为190℃,热处理1 h时光催化效果最好.     

Ag3PO4/ATP纳米复合材料的制备及可见光催化性能研究

以天然矿物凹凸棒石(简称ATP)为载体,在其表面原位生成纳米Ag3PO4,制备Ag3POJATP复合光催化剂.利用X射线衍射(XRD)、透射电子显微镜(TEM)、紫外-可见漫反射光谱(Uv-vis DRS)等测试方法对复合材料的表面结构、形貌、光响应性能进行了研究.结果表明:Ag3PO4/ATP复合光催化剂中Ag3PO4-以纳米微球均匀分布在ATP表面,平均直径12.5 nm.进一步通过150 W碘钨灯下降解甲基橙(MO)的实验,研究了光催化材料的可见光催化性能.实验结果表明,Ag3PO4、Ag3PO4/ATP在可见光下具有光催化活性,Ag3PO4/ATP的光催化性能优于Ag3PO4,2.5h对甲基橙的降解率达到93.4;.     

表面活性剂辅助法制备纳米Z nO及光催化性能研究

以Zn(NO3)2·6H2 O、氨水和不同的表面活性剂为原料,采用沉淀法制备了具有不同微观形貌和尺寸的纳米ZnO,研究表面活性剂对纳米ZnO光催化降解甲基橙性能的影响.通过X射线衍射仪(XRD)、扫描电镜(SEM)和紫外可见分光光度计(UV-Vis)等对所制备纳米ZnO的物相、形貌及光吸收性能进行表征,并对其进行光催化性能测试.结果表明,以CTAB为表面活性剂所制备的纳米ZnO,粒径均匀、分散性良好、无明显团聚现象,并且对甲基橙的光催化降解性能最好,在2 h内降解率可达90.6;.     

TiO2/RGO复合材料的制备与光催化性能研究

采用水热法制备了TiO2/RGO复合物,采用X射线衍射(XRD)、扫描电镜(SEM)、紫外-可见漫反射光谱(UV-Vis)等测试方法对制备的复合物进行了表征,紫外-可见光谱结果表明生成的TiO2/RGO复合物的吸收边延长到可见光范围,达到470 nm,并研究了制备的不同质量比TiO2/RGO复合物室温条件在可见光下对目标污染物甲基橙(MO)的光催化降解活性,实验结果表明:质量比为20∶1的TiO2/RGO复合物,2h内的降解率达到89.70;,可见复合物能够有效地提高可见光催化性能.     

炭吸附水热法制备TmFeO3及其光催化性能研究

利用炭吸附水热法制备钙钛矿型TmFeO₃纳米粉体,通过X射线衍射仪(XRD),热重-差热分析仪(TG-DTA),紫外可见分光光度计(UV-Vis)和气相色谱仪等设备分析晶体比表面积、热稳定性、吸光性能及物相结构。以全谱镝灯为可见光光源,通过催化甲基橙降解,评价TmFeO₃粉体的光催化性能。实验结果表明,炭吸附水热法制得的TmFeO₃粉体有更高的结晶度和热稳定性,且比表面积大,吸收可见光范围增大,吸光性能更好。光催化降解甲基橙实验结果表明,光照140 min时对甲基橙的降解率达88％,是普通水热合成法制得的TmFeO₃催化性能的1.5倍。     

g-C3N4/ZnCr-LDH复合材料制备及光催化降解甲基橙废水性能研究

采用原位合成的方法成功制备了一系列不同配比的g-C3 N4/ZnCr-LDH纳米复合材料,对其形貌、结构、及光电化学性质等进行系统分析,并在可见光下对其降解甲基橙的催化性能进行研究.结果表明,g-C3 N4与ZnCr-LDH复合可增强可见光的吸收强度,有效抑制光生电子-空穴的复合,从而提高了复合光催化剂的活性.其中0.92CN/LDH复合光催化剂降解甲基橙的效率2 h达到了97;,比纯的g-C3 N4提高了2倍.最后经过5次连续循环实验发现,复合光催化剂的降解活性还保持在80;以上,表明复合材料具有良好的稳定性.     

TiO2/P3HT纳米复合材料光催化降解甲基橙的动力学研究

用化学氧化聚合法制备了导电聚合物聚3-己基噻吩(P3HT).用聚3-己基噻吩改性纳米二氧化钛,合成TiO2/P3HT纳米复合微粒.对其光催化降解甲基橙的反应动力学进行了分析,测定了反应的表观活化能.结果表明,纯纳米TiO2和TiO2/P3HT纳米复合微粒光催化降解甲基橙的反应均为一级反应;纳米TiO2经聚3-己基噻吩(P3HT)修饰后在可见光下的光催化活性得到提高,且提高降解温度有利于提高甲基橙的降解率,纳米TiO2经P3HT修饰后降解甲基橙的表观活化能由23.44 KJ/mol下降到19.36 kJ/mol.     

Modelling of mechanism of agglomeration of KCl crystallization

The article presents an analysis into agglomeration during KCl vacuum crystallization. The theoretical and experimental investigations into the mechanism of agglomeration during mass crystallization result in an extension of the growth phenomena within the known model equations. The basis for this is essentially constituted by the collision model concepts of the theory of floculation in disperse systems. The parameters derived from the microprocess analysis (energy dissipation, content of solids, growth rate of individual grains) lead to model equations which are confirmed by laboratory and test trials.     

Relationship of Morphological Types of Dynamic Forms of Crystals

Crystallography Reports - The relationship of morphological spectra (sets of data on the morphological types of real polyhedral crystals and their probabilities under current physicochemical...     

Velocities of Disappearance and Lifetime of Faces of Growing Crystals

The formulae for absolute R_disap and relative R velocities of disappearance and lifetime τ of faces of growing crystals have been derived for stationary growth. It was shown that the quantities are determined by the relative growth velocity R_A/R_critA of the vanishing face A with respect to the critical growth velocity R_critA and by the geometry of a crystal expressed by the trigonometric functions of interfacial angles β and γ formed between face A and the adjacent faces. R increases and τ decreases with the increase in R_A/R_critA to certain limiting values. The calculations have been verified and illustrated by the experimental results for triclinic potassium bichromate (KBC) crystals. Results enable ones to predict values of velocities of disappearance and lifetimes of undesirable, supplementary faces of any real crystal.     

Development of Pauling's concepts of geometric characteristics of atoms

The evolution of the geometric characteristics introduced by Pauling and their dependence on the specific features of the structure and chemical bonds have been considered. The values of the covalent and van der Waals radii are given as well as their relationships and mutual transitions.     

Comparative analysis of two methods of calculation of the orientation of domain walls in ferroelastics

Two types of domain-wall equations are analyzed: the equations derived by the Sapriel method and the equations obtained by interface matching of the thermal-expansion tensor. It is shown that, for W-type domain walls, these methods yield the same equations. For W′-type domain walls, the equations obtained by different methods coincide for proper ferroelastics and differ for improper ferroelastics.     

Dependence of the parameters of equations of viscous flow on chemical composition of silicate melts

The temperature dependence of viscosity of silicate melts is discussed in the framework of the Avramov–Milchev (AM) equation. The composition is described by means of two parameters: the molar fraction, x, and the “lubricant fraction”, l. The molar fraction is the sum of the molar parts x_i of all oxides dissolved in SiO₂, the molar fraction of the latter being 1 ? x. It is shown that, with sufficient precision, two of the parameters of the AM equation can be presented as unique functions of the molar fraction. On the other hand, x is not sufficient to determine properly the reference temperature T_r , at which viscosity is η_r = 10¹³ [dPa.s]. Therefore, additional parameter, “lubricant fraction” l, is introduced. For each of the components, l_i is a product of molar part x_i and a specific dimensionless coefficient 0 ≤ k_i ≤ 1 accounting for the specific contribution of this component to the increased mobility of the system. It is demonstrated that, for l > 0, the reference temperature is related to the “lubricant fraction” l through the reference temperature T_r,SiO2 of pure SiO₂.     

A review of measurement of thermophysical properties of silicon melt

Measurements of thermophysical properties of Si melt and supplementary study of X-ray scattering/diffraction by the authors' group were reviewed. The values obtained differed variously from those of literature. Density was 2–3% larger, surface tension 20–30% smaller, viscosity up to 40% larger, electrical conductivity 8% smaller, spectral emissivity more or less in good agreement with literature values, and thermal diffusivity a few percent larger. An anomalous density jump was found near the melting point. Surface tension and viscosity also showed anomaly. A strange time-dependent change of density was observed over 3 h after melting. X-ray analyses suggested a slight change in local atom ordering, but showed no sign of cluster formation. An addition of 0.1 at% gallium caused the density jump to disappear, while that of boron caused no change. An EXAFS study of the former melt indicated a strong interaction between Ga and Si atoms as if molecules of GaSi₃ existed. The implications of the measured properties are a possibility of soft-turbulence in an Si melt in a relatively large crucible, a more complicated manner of intake of oxygen depleted molten Si from the free surface region to underneath the growing crystal, and a relaxation of the melt after melting arising from trapped gas species.     

Generation of crystal structures of heteromolecular compounds by the method of discrete modeling of packings

Within the method of discrete modeling of packings, an algorithm of generation of possible crystal structures of heteromolecular compounds containing two or three molecules in the primitive unit cell, one of which has an arbitrary shape and the other (two others) has a shape close to spherical, is proposed. On the basis of this algorithm, a software package for personal computers is developed. This package has been approved for a number of compounds, investigated previously by X-ray diffraction analysis. The results of generation of structures of five compounds—four organic salts (with one or two spherical anions) and one solvate—are represented.