TiO2/蒙脱石复合物中纳米TiO2的相变与光催化性能

以TiOSO4.2H2O为TiO2的前驱体、蒙脱石为基体,采用水解-插层复合法,在不同热处理温度下制备了系列TiO2/蒙脱石纳米复合样品。采用XRD研究了样品中TiO2物相和晶粒大小等属性的变化,研究了样品对亚甲基蓝溶液的吸附脱色性和光催化脱色性。结果表明,热处理温度对TiO2/蒙脱石中TiO2物相与相对含量、晶粒大小和光催化脱色性等有很大影响。经700℃热处理的TiO2/蒙脱石复合样品锐钛矿晶粒仅为13.7 nm,光催化脱色率高达42.7%,总脱色率达79.8%;经1100℃热处理后,锐钛矿相对含量高达55.7%,锐钛矿晶粒为55.8 nm,光催化脱色率仍为32.5%,总脱色率高达46.6%;TiO2/蒙脱石复合样品中的TiO2与纯纳米TiO2样品相比,具有更高的锐钛矿相向金红石相转变的温度、更小的TiO2晶粒尺寸、更强的光催化脱色性。蒙脱石结构层对TiO2的相转变和晶粒长大具有明显的阻滞作用。     

爆轰法合成超小TiO2的光催化性能分析

颗粒尺寸是影响TiO2光催化活性的重要因素,颗粒越小其光催化效率越高.在密闭的反应釜内引爆用含钛前驱体、硝酸铵、黑索金与一定量的聚苯乙烯小球制备的浆状混合炸药制备了超小的TiO2纳米颗粒.研究了炸药配比对TiO2的形貌、分散性、颗粒尺寸的影响,并通过降解甲基橙溶液表征超小TiO2的光催化性能.结果发现:制备的TiO2由金红石相与锐钛矿相组成,大部分颗粒呈球形或不规则四边形,尺寸在10nm左右,少量颗粒尺寸大于20nm,结晶度较好.炸药配比对TiO2的结晶度、颗粒大小、分散性等有较大影响.TiO2的禁带宽度在2.8eV左右,低于锐钛矿相与金红石相的禁带宽度,能够提高太阳光的利用率.爆轰制备的超小TiO2催化降解甲基橙溶液50min时,甲基橙的降解率为30;,明显高于爆轰法制备的颗粒较大的TiO2与铜粒子掺杂的纳米TiO2的光催化速率,光催化性能得到明显提高.     

不同晶型TiO2的制备与光催化性能研究

采用溶胶凝胶法,利用不同温度热处理制备了不同晶体结构的TiO2纳米晶.利用XRD、SEM、EDS、XPS等分析方法对样品的晶体结构、形貌、化学元素组成以及价态进行了表征.结果表明400 ℃、500 ℃热处理TiO2为锐钛矿晶型,600 ℃ 热处理为锐钛矿金红石混合晶型,700 ℃热处理为金红石晶型,单颗粒子呈现类似球形形貌.以罗丹明B为目标污染物,测试了样品的光催化性能,结果表明400 ℃热处理TiO2具有最高的光催化活性,3 h后对罗丹明B的降解率达到94.6;,其反应速率常数达到0.969 h-1.     

炭黑吸附水热法制备纳米TiO2粉体及其光催化降解甲基橙

利用炭黑吸附钛酸异丙酯水热法制得锐钛矿型TiO2纳米粉体.采用热重/差热分析(TG-DTA)、X-射线衍射(XRD)、扫描电镜(SEM)、比表面积吸附(BET)和紫外-可见光谱(Uv-vIS)等分析方法对不同煅烧机制下所得粉体的物相、颗粒度、分散性和光吸收性能进行表征.同时利用纳米TiO2粉体对甲基橙进行了光催化降解,研究了其光催化性能.结果表明,炭黑的吸附阻止了纳米TiO2超细颗粒的团聚和烧结,制得的颗粒分散均匀、具有单一锐钛矿晶型结构的TiO2纳米粉体.经500℃煅烧获得的TiO2粉体粒径约为15 nm,比表面积为76.31 g/m2.在紫外灯照射下,由于炭黑的吸附和纳米TiO2的光催化形成协同效应,甲基橙的光催化降解率在6min达到99;.     

Ce掺杂TiO2纳米粉体的制备及其光催化性能研究

以钛酸丁酯为前驱体,冰醋酸为螫合剂,以硝酸铈为掺杂剂,采用溶胶.凝胶法制备了铈掺杂TiO2纳米粉体.研究了铈掺杂对TiO2相组成和晶粒尺寸的影响及不同掺杂量对TiO2光催化活性的影响,确定了Ce的最佳掺杂量.结果表明:Ce掺杂缩小了TiO2的锐钛矿相→金红石相(A→R)的相变温区范围,抑制了TiO2的晶粒增长.热处理温度升高,二氧化钛的比表面积下降.掺杂适量的铈提高了TiO2的光催化活性,Ce掺杂为0.05;摩尔分数时Ce-TiO2的光催化活性达到最佳,甲基橙降解率可达90;左右.     

Sm,C掺杂改性纳米TiO2及其可见光催化性能研究

通过溶胶-凝胶法制备了Sm、C分别单掺杂和共掺杂纳米TiO2光催化剂,采用XRD、FESEM、TEM、XPS、UV-Vis-DRS、PL、Nano-sizer纳米粒度分析仪等对样品进行表征,以光催化降解亚甲基蓝(MB)作为评价模型,研究了不同样品对MB的光催化降解效果.结果表明,Sm单掺杂抑制了TiO2从锐钛矿向金红石的相转变,抑制晶粒长大,C的单掺杂则促进了TiO2的相转变,Sm或(和)C的掺杂均能细化TiO2晶粒,拓展TiO2在可见光区的光谱响应范围,降低光生e-/h+对的复合几率.Sm、C的掺杂均能有效提高TiO2的光催化活性,且共掺杂时存在协同效应,当n(Sm)∶n(C)∶n(Ti)=0.01∶0.3∶1、热处理温度500 ℃时,Sm/C-TiO2样品在普通日光灯下催化降解MB的一级表观速率常数是相同条件下纯TiO2的4.3倍.     

TiO2/P3HT纳米复合材料光催化降解甲基橙的动力学研究

用化学氧化聚合法制备了导电聚合物聚3-己基噻吩(P3HT).用聚3-己基噻吩改性纳米二氧化钛,合成TiO2/P3HT纳米复合微粒.对其光催化降解甲基橙的反应动力学进行了分析,测定了反应的表观活化能.结果表明,纯纳米TiO2和TiO2/P3HT纳米复合微粒光催化降解甲基橙的反应均为一级反应;纳米TiO2经聚3-己基噻吩(P3HT)修饰后在可见光下的光催化活性得到提高,且提高降解温度有利于提高甲基橙的降解率,纳米TiO2经P3HT修饰后降解甲基橙的表观活化能由23.44 KJ/mol下降到19.36 kJ/mol.     

钒掺杂纳米二氧化钛的制备及光催化活性研究

以钛酸四丁酯为钛前驱体,偏钒酸铵为掺杂离子给体.采用溶胶-凝胶法制备了V掺杂纳米二氧化钛粉体;并使用TGA-DSC、XRD、BET、SEM对其晶化温度与结构进行了表征.结果表明:V掺入促进锐钛矿相向金红石相转变、抑制晶粒长大、增大比表面积,纳米粉体颗粒呈分布较均匀的类球形晶粒.以亚甲基蓝为模型反应,考察了V掺杂量、煅烧温度对催化剂光催化性能的影响,结果表明:V掺杂的TiO2 粉体降解亚甲基蓝符合一级反应动力学规律;晶格中V4+能够作为电荷转移物种,有效的抑制光生电子与空穴的复合,增加了表面空穴浓度,提高TiO2 纳米粉体的光催化活性,当掺杂量为1.5 mol;,煅烧温度为450 ℃时,TiO2 具有最佳的光催化性能.     

高热稳定性锐钛矿型Nd掺杂纳米TiO2的制备与表征

以钛酸丁酯为原料,采用溶胶凝胶法合成了纯TiO2与Nd掺杂TiO2纳米粉体,对其进行了350℃至850℃的热处理.利用XRD、SEM、和EDS对粉体的晶型结构,微观形貌和元素成分进行表征,研究了Nd掺杂对TiO2晶粒尺寸以及晶型转变的影响.结果表明:样品晶粒尺寸达到纳米级别,Nd掺杂后TiO2晶粒尺寸减小.纯TiO2在550℃时已经有金红石生成,750℃完成锐钛矿向金红石的转变;Nd掺杂TiO2在750℃时仍然是锐钛矿,850℃时有少许金红石生成,Nd掺杂提高了TiO2锐钛矿结构的热稳定性.     

稀土Sm掺杂对纳米TiO2结构和可见光催化性能的影响

采用溶胶-凝胶法制备了纯TiO2和稀土Sm掺杂TiO2纳米粉体( Sm-TiO2),通过XRD、XPS、FT-IR、UV-Vis-DRS、PL和Nano-sizer纳米粒度仪等对样品进行表征,以亚甲基蓝( MB)的光催化降解为探针反应,探讨稀土Sm掺杂对纳米TiO2的结构和可见光催化性能的影响。结果表明,Sm掺入TiO2后在表面存在Sm3+和Sm2+两种价态, Sm掺杂抑制了TiO2从锐钛矿向金红石的相转变,阻碍纳米晶粒生长,增加了纳米粉体表面羟基含量;适量的Sm掺杂能使TiO2吸收光谱的阈值波长红移,有效降低光生e-/h+的复合率,提高TiO2光催化活性。热处理温度500℃时,掺杂1.0wt;Sm的纳米TiO2样品在普通日光灯下对MB在6 h内的光催化降解效率达97;,明显高于同等条件下Degussa公司产品P25的降解率56;。     

Modelling of mechanism of agglomeration of KCl crystallization

The article presents an analysis into agglomeration during KCl vacuum crystallization. The theoretical and experimental investigations into the mechanism of agglomeration during mass crystallization result in an extension of the growth phenomena within the known model equations. The basis for this is essentially constituted by the collision model concepts of the theory of floculation in disperse systems. The parameters derived from the microprocess analysis (energy dissipation, content of solids, growth rate of individual grains) lead to model equations which are confirmed by laboratory and test trials.     

Relationship of Morphological Types of Dynamic Forms of Crystals

Crystallography Reports - The relationship of morphological spectra (sets of data on the morphological types of real polyhedral crystals and their probabilities under current physicochemical...     

Velocities of Disappearance and Lifetime of Faces of Growing Crystals

The formulae for absolute R_disap and relative R velocities of disappearance and lifetime τ of faces of growing crystals have been derived for stationary growth. It was shown that the quantities are determined by the relative growth velocity R_A/R_critA of the vanishing face A with respect to the critical growth velocity R_critA and by the geometry of a crystal expressed by the trigonometric functions of interfacial angles β and γ formed between face A and the adjacent faces. R increases and τ decreases with the increase in R_A/R_critA to certain limiting values. The calculations have been verified and illustrated by the experimental results for triclinic potassium bichromate (KBC) crystals. Results enable ones to predict values of velocities of disappearance and lifetimes of undesirable, supplementary faces of any real crystal.     

Development of Pauling's concepts of geometric characteristics of atoms

The evolution of the geometric characteristics introduced by Pauling and their dependence on the specific features of the structure and chemical bonds have been considered. The values of the covalent and van der Waals radii are given as well as their relationships and mutual transitions.     

A review of measurement of thermophysical properties of silicon melt

Measurements of thermophysical properties of Si melt and supplementary study of X-ray scattering/diffraction by the authors' group were reviewed. The values obtained differed variously from those of literature. Density was 2–3% larger, surface tension 20–30% smaller, viscosity up to 40% larger, electrical conductivity 8% smaller, spectral emissivity more or less in good agreement with literature values, and thermal diffusivity a few percent larger. An anomalous density jump was found near the melting point. Surface tension and viscosity also showed anomaly. A strange time-dependent change of density was observed over 3 h after melting. X-ray analyses suggested a slight change in local atom ordering, but showed no sign of cluster formation. An addition of 0.1 at% gallium caused the density jump to disappear, while that of boron caused no change. An EXAFS study of the former melt indicated a strong interaction between Ga and Si atoms as if molecules of GaSi₃ existed. The implications of the measured properties are a possibility of soft-turbulence in an Si melt in a relatively large crucible, a more complicated manner of intake of oxygen depleted molten Si from the free surface region to underneath the growing crystal, and a relaxation of the melt after melting arising from trapped gas species.     

Dependence of the parameters of equations of viscous flow on chemical composition of silicate melts

The temperature dependence of viscosity of silicate melts is discussed in the framework of the Avramov–Milchev (AM) equation. The composition is described by means of two parameters: the molar fraction, x, and the “lubricant fraction”, l. The molar fraction is the sum of the molar parts x_i of all oxides dissolved in SiO₂, the molar fraction of the latter being 1 ? x. It is shown that, with sufficient precision, two of the parameters of the AM equation can be presented as unique functions of the molar fraction. On the other hand, x is not sufficient to determine properly the reference temperature T_r , at which viscosity is η_r = 10¹³ [dPa.s]. Therefore, additional parameter, “lubricant fraction” l, is introduced. For each of the components, l_i is a product of molar part x_i and a specific dimensionless coefficient 0 ≤ k_i ≤ 1 accounting for the specific contribution of this component to the increased mobility of the system. It is demonstrated that, for l > 0, the reference temperature is related to the “lubricant fraction” l through the reference temperature T_r,SiO2 of pure SiO₂.     

Comparative analysis of two methods of calculation of the orientation of domain walls in ferroelastics

Two types of domain-wall equations are analyzed: the equations derived by the Sapriel method and the equations obtained by interface matching of the thermal-expansion tensor. It is shown that, for W-type domain walls, these methods yield the same equations. For W′-type domain walls, the equations obtained by different methods coincide for proper ferroelastics and differ for improper ferroelastics.     

Generation of crystal structures of heteromolecular compounds by the method of discrete modeling of packings

Within the method of discrete modeling of packings, an algorithm of generation of possible crystal structures of heteromolecular compounds containing two or three molecules in the primitive unit cell, one of which has an arbitrary shape and the other (two others) has a shape close to spherical, is proposed. On the basis of this algorithm, a software package for personal computers is developed. This package has been approved for a number of compounds, investigated previously by X-ray diffraction analysis. The results of generation of structures of five compounds—four organic salts (with one or two spherical anions) and one solvate—are represented.