工艺因素对α-Al2O3微滤膜纳米ZnO改性涂层显微结构的影响

以硝酸锌和尿素为原料,采用共沉淀法在α-Al2O3微滤膜孔内表面制备了纳米ZnO涂层.实验考察了反应物浓度、反应温度和反应时间对纳米ZnO涂层显微结构的影响规律,同时结合TEM对该涂层的显微结构进行观察分析.结果表明:当硝酸锌浓度为0.3 mol/L、尿素浓度为0.6 mol/L、反应温度为95 ℃、反应时间为4 h时,ZnO涂层的晶粒细小均匀、结构致密且表面具有良好的平整度.采用该ZnO涂层改性后的α-Al2O3微滤膜,其过滤效率得到了明显提高,水通量最大增幅达到45.6;.     

电沉积法制备ZnO纳米棒阵列及其发光特性

本文以掺F的SnO2导电玻璃为基板,以硝酸锌水溶液为电解液,采用三电极恒电位体系电沉积制备ZnO纳米棒阵列,系统考察了硝酸锌浓度和沉积电位等工艺参数对ZnO纳米棒阵列的微观形貌及其发光性能的影响规律.结果表明,硝酸锌浓度和沉积电位对纳米棒阵列的形貌有显著影响,控制适宜的工艺条件可以制备出直径分布均匀、结晶性好且纯度高的六方纤锌矿ZnO纳米棒阵列.荧光光谱分析表明,电沉积制备出的ZnO纳米棒阵列在385 nm附近有一个强荧光发射峰,且发光性能稳定、对纳米棒阵列微观形貌的细微变化不敏感,使其在发光二极管和激光器等领域具有广阔的应用前景.     

衬底放置方式对ZnO阵列形貌的影响

ZnO纳米棒阵列通过两步化学法制备,首先通过水热法在ITO衬底上制备ZnO晶种,然后把有ZnO晶种的ITO衬底垂直放入以氯化锌和氨水为溶剂的pH值为11的溶液,在85℃恒温条件下生长2h,然后在600 ℃对其进行退火处理,就得到了在ITO衬底上生长的ZnO纳米棒阵列.利用X射线衍射(XRD)、扫描电子显微镜(SEM)、高分辨透射电子显微镜(HRTEM)、紫外可见分光光度计和光致发光谱仪(PL)对样品的晶体结构、形貌和光学性能进行了表征.结果表明制备的高密度棒状ZnO纳米阵列是垂直生长在ITO衬底上,纳米棒的直径大约为150nm,长约1μm,纤锌矿ZnO纳米棒沿着[0002]方向一致生长;ZnO纳米棒阵列在波长为300 ～400 nm处出现了很强的紫外吸收峰;ZnO纳米棒阵列的光致发光光谱在380 nm左右有一个极强的紫外发光峰.研究了衬底放置方式对ZnO晶种形貌和光学性能的影响.最后通过对棒状ZnO纳米阵列形成过程中可能涉及到的化学反应以及形成机理做了简单的分析.     

溶胶-凝胶法制备ZnO薄膜的特性研究

采用Sol-gel法,在普通载玻片上使用旋转涂覆技术生长了具有c轴择优取向生长的ZnO薄膜.用热分析、XRD、SEM等手段对薄膜样品进行了表征.热分析结果表明:二水醋酸锌-乙醇胺-乙二醇甲醚体系Sol-gel的热分解过程与纯二水合乙酸锌的分解过程大相径庭.ZnO薄膜的Sol-gel分解趋于在较窄的温度范围内一步完成.在Si(111)衬底和玻璃衬底上生长了ZnO薄膜,都表现出明显的c轴择优取向生长.对比了不同涂覆层数对ZnO薄膜结构及表面形貌的影响,ZnO薄膜的c轴择优取向生长特性随着涂覆层数的增加而减弱,这是由于ZnO薄膜的生长模式由层状生长向岛状生长转变所致.ZnO薄膜在可见光范围的透光率超过85;.     

ZnO/Fe2O3复合结构的制备及光电化学性能研究

采用水热法在FTO导电玻璃上制备出大面积高能面裸露的ZnO纳米片阵列.采用旋涂法在纳米片表面制备Fe2O3纳米颗粒形成ZnO/Fe2O3复合结构.利用X射线衍射(XRD)、扫描电子显微镜(SEM)、紫外-可见光吸收光谱和三电极光电测试系统对复合薄膜的结构组成、形貌、光学性能和光电化学性质进行了表征和分析.研究结果表明,随着Fe2O3复合次数的增加薄膜的光吸收范围逐步拓宽到可见光区,ZnO/Fe2O3复合结构光电极的光电流明显高于单纯的ZnO纳米片阵列光电极.     

g-C3N4/ZnO复合材料的制备及其光催化性能分析

以尿素和乙酸锌为前驱体,采用水热法制得不同ZnO含量的光催化复合材料石墨相氮化碳/氧化锌(g-C3N4/ZnO),采用TEM、XRD、UV-Vis、FT-IR、PL等分析方法对所得催化剂进行了表征和分析.结果表明,ZnO颗粒附着于多孔片层状的g-C3N4之上形成g-C3N4/ZnO复合材料,降低了g-C3N4的禁带宽度,增加了g-C3 N4对可见光的吸收,以及光生电子-空穴对的分离几率.以可见光驱动亚甲基蓝的降解实验为探针反应检测催化剂的光催化性能,结果表明,质量比为3∶2的g-C3N4/ZnO复合材料表现最优光催化性能,其可在120 min内降解92;的亚甲基蓝,其光催化降解速率为g-C3N4单体的2.8倍.     

衬底温度对直流磁控溅射法制备掺锆氧化锌透明导电薄膜性能的影响

利用直流磁控溅射法在石英衬底上制备出了高透明导电的掺锆氧化锌(ZnO:Zr)薄膜.研究了衬底温度对ZnO:Zr薄膜结构、形貌及光电性能的影响.XRD表明实验中制备的ZnO:Zr为六方纤锌矿结构的多晶薄膜,具有垂直于衬底方向的c轴择优取向.实验所制备ZnO:Zr薄膜的晶化程度和导电性能对衬底温度有很强的依赖性.当衬底温度为300 ℃时, ZnO:Zr薄膜具有最小电阻率7.58×10-4 Ω·cm,其可见光平均透过率超过了91;.     

ZnO纳米线/纳米棒混合阵列的制备及其光致发光性能研究

使用无催化剂热蒸发法,在ZnO/Si薄膜衬底上制备了ZnO纳米线/纳米棒混合阵列.其中,纳米线的直径为10～20nm,纳米棒的直径为60～160 nn,二者混合在一起垂直生长于衬底表面.从衬底的上游到下游位置,混合,阵列中纳米线的含量逐渐下降,纳米棒逐渐增多.室温光致发光测试发现尺寸较小的纳米线阵列的紫外光发光强度比大尺寸纳米棒阵列高约5倍.持续激发光照射下,纳米线阵列的发光强度逐渐上升,停止光照后又逐渐下降到初始值,这可以用纳米线表面O2分子的解吸附和吸附过程来理解.     

聚乙烯醇对ZnO纳米棒结构和光学性能的影响

以六水硝酸锌为锌源,聚乙烯醇(PVA)为分散剂,制备了纳米氧化锌(ZnO).利用X射线衍射(XRD)和电子扫描电镜(SEM)对氧化锌的晶体结构、形貌和尺寸进行了表征.利用吸收光谱对氧化锌的吸收率进行了测量.结果表明,所制备的氧化锌属于六方纤锌矿单晶结构,呈棒状结构.通过改变PVA含量,氧化锌纳米棒的长度可以从400nm到2μm可调.吸收光谱表明,随着PVA含量增加,吸收光谱发生红移.讨论了PVA作用下氧化锌纳米棒的形成机理.     

ZnO纳米棒的电致发光研究

采用化学浴沉积法在ITO导电玻璃衬底上制备了ZnO纳米棒膜层,构建了无绝缘层和添加Alq3为绝缘层的两类ZnO发光器件,测试和比较了两类器件的光致发光与电致发光特性.结果表明,在ZnO和Alq3混合体系的PL谱中,观察到ZnO的380nm发光减弱而Alq3的520 nm发光增强,这表明在ZnO的激子态和Alq3分子之间发生了能量转移.ZnO纳米棒的EL谱表现为随机激光,这主要是由于光在纳米棒内谐振,及纳米棒长短不一、阵列不整齐所致.加入Alq3后,器件的Ⅰ-Ⅴ曲线上出现了约为1.6V的阈值电压,工作电压由30 V降为18 V,且器件的发光颜色由黄绿区移到蓝紫区.     

Modelling of mechanism of agglomeration of KCl crystallization

The article presents an analysis into agglomeration during KCl vacuum crystallization. The theoretical and experimental investigations into the mechanism of agglomeration during mass crystallization result in an extension of the growth phenomena within the known model equations. The basis for this is essentially constituted by the collision model concepts of the theory of floculation in disperse systems. The parameters derived from the microprocess analysis (energy dissipation, content of solids, growth rate of individual grains) lead to model equations which are confirmed by laboratory and test trials.     

Relationship of Morphological Types of Dynamic Forms of Crystals

Crystallography Reports - The relationship of morphological spectra (sets of data on the morphological types of real polyhedral crystals and their probabilities under current physicochemical...     

Velocities of Disappearance and Lifetime of Faces of Growing Crystals

The formulae for absolute R_disap and relative R velocities of disappearance and lifetime τ of faces of growing crystals have been derived for stationary growth. It was shown that the quantities are determined by the relative growth velocity R_A/R_critA of the vanishing face A with respect to the critical growth velocity R_critA and by the geometry of a crystal expressed by the trigonometric functions of interfacial angles β and γ formed between face A and the adjacent faces. R increases and τ decreases with the increase in R_A/R_critA to certain limiting values. The calculations have been verified and illustrated by the experimental results for triclinic potassium bichromate (KBC) crystals. Results enable ones to predict values of velocities of disappearance and lifetimes of undesirable, supplementary faces of any real crystal.     

Development of Pauling's concepts of geometric characteristics of atoms

The evolution of the geometric characteristics introduced by Pauling and their dependence on the specific features of the structure and chemical bonds have been considered. The values of the covalent and van der Waals radii are given as well as their relationships and mutual transitions.     

Dependence of the parameters of equations of viscous flow on chemical composition of silicate melts

The temperature dependence of viscosity of silicate melts is discussed in the framework of the Avramov–Milchev (AM) equation. The composition is described by means of two parameters: the molar fraction, x, and the “lubricant fraction”, l. The molar fraction is the sum of the molar parts x_i of all oxides dissolved in SiO₂, the molar fraction of the latter being 1 ? x. It is shown that, with sufficient precision, two of the parameters of the AM equation can be presented as unique functions of the molar fraction. On the other hand, x is not sufficient to determine properly the reference temperature T_r , at which viscosity is η_r = 10¹³ [dPa.s]. Therefore, additional parameter, “lubricant fraction” l, is introduced. For each of the components, l_i is a product of molar part x_i and a specific dimensionless coefficient 0 ≤ k_i ≤ 1 accounting for the specific contribution of this component to the increased mobility of the system. It is demonstrated that, for l > 0, the reference temperature is related to the “lubricant fraction” l through the reference temperature T_r,SiO2 of pure SiO₂.     

Comparative analysis of two methods of calculation of the orientation of domain walls in ferroelastics

Two types of domain-wall equations are analyzed: the equations derived by the Sapriel method and the equations obtained by interface matching of the thermal-expansion tensor. It is shown that, for W-type domain walls, these methods yield the same equations. For W′-type domain walls, the equations obtained by different methods coincide for proper ferroelastics and differ for improper ferroelastics.     

A review of measurement of thermophysical properties of silicon melt

Measurements of thermophysical properties of Si melt and supplementary study of X-ray scattering/diffraction by the authors' group were reviewed. The values obtained differed variously from those of literature. Density was 2–3% larger, surface tension 20–30% smaller, viscosity up to 40% larger, electrical conductivity 8% smaller, spectral emissivity more or less in good agreement with literature values, and thermal diffusivity a few percent larger. An anomalous density jump was found near the melting point. Surface tension and viscosity also showed anomaly. A strange time-dependent change of density was observed over 3 h after melting. X-ray analyses suggested a slight change in local atom ordering, but showed no sign of cluster formation. An addition of 0.1 at% gallium caused the density jump to disappear, while that of boron caused no change. An EXAFS study of the former melt indicated a strong interaction between Ga and Si atoms as if molecules of GaSi₃ existed. The implications of the measured properties are a possibility of soft-turbulence in an Si melt in a relatively large crucible, a more complicated manner of intake of oxygen depleted molten Si from the free surface region to underneath the growing crystal, and a relaxation of the melt after melting arising from trapped gas species.     

Generation of crystal structures of heteromolecular compounds by the method of discrete modeling of packings

Within the method of discrete modeling of packings, an algorithm of generation of possible crystal structures of heteromolecular compounds containing two or three molecules in the primitive unit cell, one of which has an arbitrary shape and the other (two others) has a shape close to spherical, is proposed. On the basis of this algorithm, a software package for personal computers is developed. This package has been approved for a number of compounds, investigated previously by X-ray diffraction analysis. The results of generation of structures of five compounds—four organic salts (with one or two spherical anions) and one solvate—are represented.