叠层碲锌镉探测器制备及γ能谱特性测试

实验制备了单层和叠层(双层)碲锌镉探测器,并利用²⁴¹Am@59.54 keV和⁵⁷Co@122 keV γ射线源测试了其γ能谱特性。相比单层探测器,对于较高能量的⁵⁷Co@122 keV γ射线,叠层碲锌镉探测器表现出较高的探测效率和光峰值效率,较好地改善了康普顿连续统一体,表现出与整块等厚度碲锌镉探测器类似的性能;但光生载流子收集效率变差,能谱峰位向低道区偏移;能量分辨率未得到改善。实验初步表明,通过叠加方法制备叠层碲锌镉探测器是可行的,并可推断制备更大厚度的叠层探测器将有利于中高能γ射线能谱测量。     

碲锌镉面元辐射探测器堆积载流子屏蔽效应

采用铑(Rh)靶45 kV X射线源进行了碲锌镉(CdZnTe)面元像素阵列探测器成像实验。实验结果表明：在探测距离1 mm,管电压45 kV条件下,管电流增大至20 μA时,辐照中心区域像素单元信号丢失,出现围绕辐照中心区域的边缘高事件计数环形探测图像。随着管电流的增大,无响应像素区域扩大,探测器总体事件计数明显降低。进一步根据泊松方程建立了CdZnTe晶体内部电势分布模型,仿真结果表明：单位面积光子通量为5×105 mm-2·s-1时,由于CdZnTe晶体较低的空穴迁移率,晶体内部存在堆积空穴载流子形成的高空间电荷密度分布区域。晶体内部电场产生扭曲,电子载流子无法迁移至对应阳极位置,导致辐照中心区域产生信号屏蔽效应。     

碲锌镉面元辐射探测器堆积载流子屏蔽效应

 采用铑(Rh)靶45 kV X射线源进行了碲锌镉(CdZnTe)面元像素阵列探测器成像实验。实验结果表明：在探测距离1 mm,管电压45 kV条件下,管电流增大至20 μA时,辐照中心区域像素单元信号丢失,出现围绕辐照中心区域的边缘高事件计数环形探测图像。随着管电流的增大,无响应像素区域扩大,探测器总体事件计数明显降低。进一步根据泊松方程建立了CdZnTe晶体内部电势分布模型,仿真结果表明：单位面积光子通量为5×10⁵ mm^-2·s^-1时,由于CdZnTe晶体较低的空穴迁移率,晶体内部存在堆积空穴载流子形成的高空间电荷密度分布区域。晶体内部电场产生扭曲,电子载流子无法迁移至对应阳极位置,导致辐照中心区域产生信号屏蔽效应。     

高能伽玛源下碲锌镉探测器的针孔成像

采用新型室温碲锌镉(CdZnTe)辐射探测器,通过厚针孔系统对137Cs高能662 keV伽玛射线辐射源进行成像探测,得到了能谱图和放射源图像。计算分析了高能射线穿透效应对空间分辨力的影响,并对不同偏压下得到的图像进行比较与讨论。实验表明,当放大倍率不大时（小于3）,高能射线对准直器材料的穿透效应增大是限制图像空间分辨力的主要因素,探测器像素尺寸的大小对图像空间分辨力的影响并不明显。随偏置电压升高,探测器得到的图像会得到改善,但过大的偏压（大于1 000 V）会使晶体内部的电场不均匀性增大,降低信噪比从而降低图像品质。     

射线探测用碲锌镉晶体及其器件研究

采用改进的布里奇曼(B ridgm an)方法进行锌组分为0.15碲锌镉(Cd0.85Zn0.15Te)晶体的生长。通过严格控制晶体生长过程中Cd的蒸气分压,使得所生长的碲锌镉晶体在结晶质量方面达到了较好的水平。对其性能进行测试,红外透射比T>60%、沉积相密度<1×104/cm2、位错腐蚀坑密度DEPD<6×104/cm2、X射线衍射双晶回摆曲线半峰全宽FWHM<20 arcsec、电阻率ρ>1010Ω.cm。利用所生长的晶体初步制作了平面型单元碲锌镉射线探测器,所用晶体的尺寸为5 mm×5 mm×2.5 mm,制成的探测器在室温下对125I和241Am放射源进行了探测测量。对125I放射源,探测出了强度为74.5%的27.5 keV的γ射线特征峰,不能仔细分辨出强度为39.8%的27.2 keV的γ射线特征结构;对241Am放射源,探测出了59.5 keV的γ射线特征峰,分辨率优于6 keV,半峰全宽FWHM<10%,同时还能检测出Te、Cd的X射线逃逸的混合峰以及241Am低能Te-K系、Np-L系的两个X射线特征峰。     

不同厚度像素CdZnTe探测器的性能测试和评估

碲锌镉材料（CdZnTe）是目前探测X射线和射线的最好材料之一。将241Am和137Cs辐射源作用于像素CdZnTe探测器,通过实验和仿真分别得到能量谱估计、能量分辨率和峰值效率。由实验和仿真结果得出:在662 keV的高能量下,厚度较大的CdZnTe探测器可获得更高的能量分辨率和峰值效率,但在59.5 keV低能处会出现拖尾升高和电荷损失的现象; 厚度较薄的探测器在低能处的特性反而更好。     

不同厚度像素CdZnTe探测器的性能测试和评估

碲锌镉材料(CdZnTe)是目前探测X射线和γ射线的最好材料之一。将241 Am和137 Cs辐射源作用于像素CdZnTe探测器,通过实验和仿真分别得到能量谱估计、能量分辨率和峰值效率。由实验和仿真结果得出:在662keV的高能量下,厚度较大的CdZnTe探测器可获得更高的能量分辨率和峰值效率,但在59.5keV低能处会出现拖尾升高和电荷损失的现象;厚度较薄的探测器在低能处的特性反而更好。     

CdZnTe像素探测器的电输运性能

碲锌镉(CdZnTe)是一种性能优异的室温核辐射半导体探测器材料,广泛应用于核安全、核医学以及空间科学等领域.然而,传统的CdZnTe平面探测器受制于"空穴拖尾"效应的影响,探测性能有待改善.采用改进的垂直布里奇曼法生长的In掺杂Cd_(0.9)Zn_(0.1)Te单晶制备出单载流子收集的4×4像素阵列探测器,通过电流-电压(I-V)测试和γ射线能谱响应测试,研究了像素探测器的电学性能和载流子电输运性能,随之与相应的CdZnTe平面探测器进行了性能对比.结果表明,CdZnTe像素探测器的电阻率约为1.73×10~(10)?·cm,且施加100 V偏压后单像素点的最大漏电流小于2.2 nA;当施加偏压升高至300 V时,单像素点对~(241)Am@59.5 keV的γ射线的最佳能量分辨率可达5.78%,探测性能优于相同条件下制备的CdZnTe平面探测器.     

CdZnTe像素阵列探测器成像评价模型及实验

考虑载流子陷获效应建立了碲锌镉(CdZnTe)像素阵列探测器感应电荷分布模型,并从非平衡载流子连续方程出发,推导了晶体内部陷获载流子数密度分布,得到了CdZnTe探测器成像调制传递函数评价模型。数值计算结果表明：随入射光子能量的增加,探测器成像质量明显下降;当电子载流子与空穴载流子迁移寿命积范围分别为0.510-3 to 5.010-3 cm2/V,2.010-5 to 7.510-5 cm2/V时,电子载流子感应信号是探测器响应信号的主要来源,而空穴迁移寿命积变化对探测器成像性能的影响有限,所建立模型的载流子收集特性与实际探测器载流子收集特性相符。搭建了40 mm40 mm的CdZnTe成像探测系统,探测并获得了系统预采样调制传递函数。实验结果表明:模型理论值与实验数据相符合,实际CdZnTe晶体中存在的固有深能级缺陷、实验所采用的非单色性X射线源及较大的实际像素间隙是造成理论值与实验结果存在一定偏差的主要原因。     

光伏碲镉汞探测器在波段内连续激光辐照下的非线性响应机理研究

利用波段内连续激光, 辐照禁带宽度为0.33 eV的中波光伏碲镉汞探测器. 实验结果表明, 随着辐照激光光强的逐渐增大, 探测器从线性响应过渡为非线性响应. 当探测器进入非线性状态, 探测器的开路电压随激光光强的增大而减小, 且在激光开启辐照时开路电压信号迅速下跳, 在激光停止辐照时开路电压信号迅速上跳. 通过考虑激光辐照下探测器的温度场分布以及温度对p-n结内建电场的影响, 结合考虑机械快门在开启和关闭时对激光光强变化的影响, 建立了光伏探测器在波段内连续激光辐照下的解析模型, 模型计算结果与实验结果吻合得较好. 研究表明, 激光辐照过程中的非线性响应, 主要由温度对p-n结内建电场的影响决定, 激光开启和关闭时的开路电压的幅值是由光强和温度共同决定.     

Response function of the CdZnTe SPEAR detector

The response function of the SPEAR CdZnTe detector developed by eV Microelectronics was studied in detail. This compact detector includes a CdZnTe crystal and a preamplifier. It is operational at room temperature. The energy range of the detector is between 10 keV and 1 MeV, and its relative resolution is less than 4% at 122 keV. The goal of our study was to establish an empirical analytical approximation of the response function to be used in Monte Carlo simulations (e.g. for spectrum unfolding). Various radionuclides were used for the study. The energy spectrum obtained from the detector not only showed smooth peaks but also had a tail on the low‐energy side of the peak. This tail part was more prominent at higher energies. By using the experimental spectrum for various nuclides such as ²⁴¹Am, ¹⁰⁹Cd, ⁵⁷Co and ¹³⁷Cs, the parameters required to replicate the experimental response with a peak plus exponential model were evaluated. Copyright © 2011 John Wiley & Sons, Ltd.     

Effect of surface preparation technique on the radiation detector performance of CdZnTe

Synthetic CdZnTe (CZT) semiconducting crystals are highly suitable for the room temperature-based detection of gamma radiation. The surface preparation of Au contacts on surfaces of CZT detectors is typically conducted after (1) polishing to remove artifacts from crystal sectioning and (2) chemical etching, which removes residual mechanical surface damage however etching results in a Te rich surface layer that is prone to oxidize. Our studies show that CZT surfaces that are only polished (as opposed to polished and etched) can be contacted with Au and will yield lower surface currents. Due to their decreased dark currents, these as-polished surfaces can be used in the fabrication of gamma detectors exhibiting a higher performance than polished and etched surfaces with relatively less peak tailing and greater energy resolution.     

JEMS- FDTD超大规模并行计算测试

介绍了JEMS- FDTD在大规模并行计算机上进行的并行性能测试,包括网格片大小对性能的影响、单节点MPI/OPENMP混合并行性能、多节点MPI/OPENMP混合并行性能、大规模并行性能等。同时,也给出了一个包含电大尺寸复杂、真实结构模型的算例,并对其进行了计算、分析。测试表明,JEMS- FDTD可高效使用数万个处理器核进行并行计算。大型算例测试表明：JEMS- FDTD可针对电大尺寸复杂、真实结构模型进行有效的计算、分析。     

碳化硅凸非球面反射镜的加工与检测

为了满足凸非球面反射镜加工中的全频段质量控制及光学参数的高精度检验,提出了应用双摆轴极坐标快速非球面加工技术及测杆法控制Hindle法检测光学参数。首先,描述了双摆轴极坐标快速非球面加工技术及设备;然后,介绍了应用测杆法控制Hindle检测法中标准球面镜顶点分别与被检非球面镜顶点及其焦点的光学间隔,并对其控制精度进行了分析;最后,针对Φ158mm的凸非球面,给出了双摆轴加工的检验结果,并对检测精度进行了分析。实验结果表明：应用双摆轴加工工艺在使低频误差快速收敛的同时,可以有效抑制中频误差,其低频误差的控制精度可以稳定地达到λ/30（λ=633 nm）;应用测杆装调Hindle检测光路的控制极限误差为±0.065 mm,两个光学间隔参数的公差分别为±0.22 mm和±0.30 mm。应用双摆轴加工技术实现了凸非球面的快速加工与全频段质量控制,采用Hindle检测凸非球面得到面形精度为0.022λ（RMS,@633 nm）,满足光学设计技术指标要求。     

新型CZT半导体X射线和g射线探测器研制与应用展望

CdZnTe(CZT)半导体是一种性能优异的室温X射线和γ射线探测材料,在环境监测、医学诊断、工业无损检测、安全检查、空间科学等众多领域有广泛的应用前景。文章简要介绍了CZT探测器的基本工作原理和性能评价指标,阐述了CZT晶体物理性能对CZT探测器性能的影响规律和CZT探测器的模拟与设计方法。CZT半导体探测器的应用与发展前景广阔,为此需要重点开展高质量、低成本的CZT晶体生长研究,CZT探测器的设计与制备以及辐射探测整机系统的设计与开发。     

Design and performance of a 2-D multi-wire position sensitive X-ray detector

A 2-D multi-wire position sensitive detector for X-ray diffraction and small angle X-ray scattering studies is described. The detector has an active area of 100 mm × 100 mm and consists of an anode plane with 10 μm SS wires at 3 mm spacing and a pair of orthogonal cathode readout planes with 25 μm SS wires placed at 1.5 mm spacing. The position information is obtained using charge division method and recorded using a laboratory built data acquisition system. The resolution and gas gain was measured for 5.9 keV X-rays (⁵⁵Fe-source) as a function of the anode wire voltage and gas pressure. It was observed that the proportional region of the PSD at 100 kPa pressure extended up to a high voltage value of around 1.5 kV and it shifted to high values up to 2 kV for gas pressure of 300 kPa. The energy resolution improved from 18% (FWHM) to 12% with increase in pressure. The spatial resolution of the PSD also showed improvement, with a value of 1.2 mm × 1.4 mm at 300 kPa gas pressure. A maximum gain of 5 × 10⁴ is obtained.     

Development of new CdZnTe detectors for room‐temperature high‐flux radiation measurements

Recently, CdZnTe (CZT) detectors have been widely proposed and developed for room‐temperature X‐ray spectroscopy even at high fluxes, and great efforts have been made on both the device and the crystal growth technologies. In this work, the performance of new travelling‐heater‐method (THM)‐grown CZT detectors, recently developed at IMEM‐CNR Parma, Italy, is presented. Thick planar detectors (3 mm thick) with gold electroless contacts were realised, with a planar cathode covering the detector surface (4.1 mm × 4.1 mm) and a central anode (2 mm × 2 mm) surrounded by a guard‐ring electrode. The detectors, characterized by low leakage currents at room temperature (4.7 nA cm^?2 at 1000 V cm^?1), allow good room‐temperature operation even at high bias voltages (>7000 V cm^?1). At low rates (200 counts s^?1), the detectors exhibit an energy resolution around 4% FWHM at 59.5 keV (²⁴¹Am source) up to 2200 V, by using commercial front‐end electronics (A250F/NF charge‐sensitive preamplifier, Amptek, USA; nominal equivalent noise charge of 100 electrons RMS). At high rates (1 Mcounts s^?1), the detectors, coupled to a custom‐designed digital pulse processing electronics developed at DiFC of University of Palermo (Italy), show low spectroscopic degradations: energy resolution values of 8% and 9.7% FWHM at 59.5 keV (²⁴¹Am source) were measured, with throughputs of 0.4% and 60% at 1 Mcounts s^?1, respectively. An energy resolution of 7.7% FWHM at 122.1 keV (⁵⁷Co source) with a throughput of 50% was obtained at 550 kcounts s^?1 (energy resolution of 3.2% at low rate). These activities are in the framework of an Italian research project on the development of energy‐resolved photon‐counting systems for high‐flux energy‐resolved X‐ray imaging.     

CVD金刚石辐射探测器研制及性能测试

电学性质优异的金刚石膜是理想的辐射探测器材料,用自支撑金刚石膜研制了辐射探测器,进行了探测器的性能测试.探测器采用的是"叉指"状共面型电极结构,探测器的有效探测区面积为3mm×3mm,探测器的连接接口是L16电缆头.探测器暗电流与电压呈线性变化的关系,表明金属电极与金刚石基底之间是欧姆型电接触.当两电极之间的电场场强为30kV/cm时,探测器的暗电流仅约为0·1nA,探测器信号的上升时间为590ps,探测器的灵敏度约110mA/W,而且探测器有较好的剂量率线性特性.