g-CN体系的准粒子能带结构和光学特性（英文）

利用多体格林函数理论,本文研究了二维CN体系(包括triazine和tri-s-triazine)的激发态特性。通过GW方法,我们计算了准粒子的能量。考虑电子-空穴相互作用,通过求解Bethe-Salpeter方程,我们获得了激发态能量和光谱。我们发现,在这两种CN体系的价带中,σ轨道和π轨道之间的交换作用非常强烈。由于占据的σ轨道和π轨道之间的准粒子修正量非常不同,因此,为了得到准确的带隙值和光谱,我们需要对这两种轨道开展精确的GW计算。与单层的CN体系相比,双层结构中层与层之间的范德华相互作用使带隙值降低了0.6 e V,而光吸收谱红移了0.2 e V,这是由于双层结构具有更小的激子束缚能。我们计算的吸收峰的位置与实验结果符合很好。实验中的吸收峰主要是由深能级的π轨道到π*轨道的跃迁形成的。π→π*跃迁和σ→π*跃迁之间的耦合能够在长波长范围产生弱的吸收尾巴,如果调整入射光的极化方向,由σ→π*跃迁产生的高强度的吸收峰将会在更低能量处出现。     

纳米稀土-介质薄膜光电发射光谱和能带结构

用真空蒸发沉积的方法制备了纳米稀土(La、Nd、Sm)粒子-BaO介质薄膜.研究表明薄膜的光电发射光谱响应阈值受纳米稀土粒子形状和大小的影响,球形纳米稀土(Sm)粒子-BaO介质薄膜的光谱响应阈值波长为720nm,条状纳米稀土(La和Nd)粒子-BaO介质薄膜阈值波长分别为650nm和660nm.研究得到纳米稀土粒子-介质薄膜等效界面位垒高度在1.7～2.0eV之间.由于纳米稀土粒子与BaO介质各自逸出功不同,当构成薄膜后使得纳米粒子周围的空间电荷分布发生变化,纳米粒子周围的能带发生弯曲.     

纳米稀土-介质薄膜光电发射光谱和能带结构

用真空蒸发沉积的方法制备了纳米稀土(La、Nd、Sm)粒子 BaO介质薄膜.研究表明薄膜的光电发射光谱响应阈值受纳米稀土粒子形状和大小的影响,球形纳米稀土(Sm)粒子 BaO介质薄膜的光谱响应阈值波长为720 nm,条状纳米稀土(La和Nd)粒子 BaO介质薄膜阈值波长分别为650 nm和660 nm.研究得到纳米稀土粒子 介质薄膜等效界面位垒高度在1.7～2.0 eV之间.由于纳米稀土粒子与BaO介质各自逸出功不同,当构成薄膜后使得纳米粒子周围的空间电荷分布发生变化,纳米粒子周围的能带发生弯曲.     

掺杂聚苯胺能带结构和导电机理的研究

用EHMO-CO方法对质子掺杂聚苯胺进行了模型化理论计算,得到与吸收光谱实验数据一致的能带结构,研究表明,掺杂苯胺中的载流子是极化子,能满意地解释掺杂聚苯胺的导电机制。     

CdSe的电子结构和光学性质研究

CdSe是Ⅱ-Ⅵ族半导体材料中一种重要的半导体材料,它有闪锌矿和纤锌矿两种不同的结构,带隙较窄,具有优良的电光特性和广泛的应用前景,得到了人们的广泛关注[1-3].     

EuB6的能带结构与成键及其光学常数的计算

采用密度泛函方法研究了EuB6的电子结构, 得到高精度能带结构和态密度分布信息; 分析成键情况, 从原子间轨道相互作用的角度说明EuB6能带结构的特征及其半金属性质. 计算出EuB6的介电函数、反射率、光电导率和能量损失函数谱等, 与实验结果一致, 表明了能带计算获得的电子结构信息的可靠性.     

YbB6的能带结构和光电导率谱的解析

用密度泛函（GGA＋U）方法研究YbB6晶体的电子结构。采用FLAPW方法进行计算,获得了比较精确的能带结构信息。分析了YbB6能带结构的特征与Yb-B6簇间成键情况的联系。在此基础上计算YbB6的反射率、介电函数、光电导率和能量损失函数等光学常数,结果与实验值符合比较好。对其光电导率（实部）和能量损失函数谱进行详细分析,对谱峰作出指认,阐明了各谱峰与能带间电子跃迁的联系,证实了前人对谱峰所作经验指认的合理部分,补充和纠正了前人经验指认的不足和不准确之处。     

有机/聚合物材料体系能带结构的表征电化学方法研究

以８－羟基喹啉铝和聚（Ｎ－乙烯基）趾唑为例,采用多种电化学方法确立了有机聚合物半导体材料的最高占有轨道和最低空轨道能级的位置,所得数据与光电子发射法表征结果一致。用电化学方法测得的带隙Ｅｇ＾ｅｌ与吸收光谱法得到的Ｅｇ＾ｏｐｔ吻合。用测得的能带结构参数为依据研制的电致发光器件的发光性能很高。     

Ca2B2O5的电子结构和能带结构

合成了标题化合物,在已测晶体结构的基础上,利用含组态作用的INDO/S方法计算了其他电子能带结构;利用态求和方法计算了微结构分子的线性极化率及其晶体的平均折射率。分析结果表明,价带主要由B^3^+和O^2^-离子的价轨道的贡献,导带底部主要由Ca^2^+离子轨道的贡献,从O^2^-离子到Ca^2^+离子的电荷转移对线性极化率起主要贡献。     

聚丁二炴的能量和能带结构计算

本文采用LCAO_SCF ab initio晶体轨道方法计算了聚丁二炔的两种可能结构: 乙炔型结构C(R—C≡C—CR′)和丁三烯型结构(_nCR=C=CR′)_n的能量和能带结构; 讨论了不同侧链基团聚丁二炔的两种结构的能量稳定性及其能带结构的变化; 并从侧链基团的性质及这两种结构的差别进行了分析, 较好地解释了计算结果。     

Helical Graphitic Carbon Nitrides with Photocatalytic and Optical Activities

Graphitic carbon nitride can be imprinted with a twisted hexagonal rod‐like morphology by a nanocasting technique using chiral silicon dioxides as templates. The helical nanoarchitectures promote charge separation and mass transfer of carbon nitride semiconductors, enabling it to act as a more efficient photocatalyst for water splitting and CO₂ reduction than the pristine carbon nitride polymer. This is to our knowledge a unique example of chiral graphitic carbon nitride that features both left‐ and right‐handed helical nanostructures and exhibits unique optical activity to circularly polarized light at the semiconductor absorption edge as well as photoredox activity for solar‐to‐chemical conversion. Such helical nanostructured polymeric semiconductors are envisaged to hold great promise for a range of applications that rely on such semiconductor properties as well as chirality for photocatalysis, asymmetric catalysis, chiral recognition, nanotechnology, and chemical sensing.     

石墨相氮化碳的改性及在环境净化中的应用

利用半导体光催化剂技术可以将环境污染物进行分解、转化和矿化,是解决环境污染问题的一条有效途径.聚合物半导体石墨相氮化碳(g-C₃N₄)具有独特的电子结构和化学性质,是一种新型的非金属功能性材料,在利用太阳能转化清洁能源和化学合成领域受到广泛关注.近几年,g-C₃N₄的开发使得利用半导体光催化技术进行环境净化的研究取得了进一步发展.本文围绕g-C₃N₄作为催化材料在环境净化中的应用,包括对水体有机污染物、细菌、大气污染物、重金属离子、CO₂等的分解转化等,综述国内外近年来的一些重要研究进展.并以在降解有机污染物中的应用为例对g-C₃N₄性能优化的各种改性措施进行了总结.最后,本文对g-C₃N₄在光催化环境净化反应过程的反应机理进行总结,并对未来发展趋势进行展望.     

石墨相氮化碳的化学合成及应用

石墨相氮化碳(g-C₃N₄)具有独特的电子结构和优异的化学稳定性, 近年来不仅被作为不含金属组分的催化剂和催化剂载体, 广泛地应用于有机官能团的选择性转换、光催化分解水、氧还原和Au、Pd、Ag、Pt等贵金属的负载, 还被作为绿色储能材料和硬模板剂用于H₂、CO₂的存储和纳米金属氮(氧)化物的制备等, 在能源和材料相关领域逐渐引起人们的关注. 本文将从材料的制备和应用角度,综述国内外同行近年来在g-C₃N₄研究中所取得的一些重要进展, 并对其未来发展趋势,特别是在能源和环境领域中的应用进行了展望.     

非金属掺杂石墨相氮化碳光催化的研究进展与展望

Since Fujishima and Honda demonstrated the photoelectrochemical water splitting on TiO₂ photoanode and Pt counter electrode, photocatalysis has been considered as one of the most promising technologies for solving both the problems of environmental pollution and energy shortage. This process can effectively use solar energy, the most abundant energy resource on the earth, to drive various catalytic reactions, such as water splitting, CO₂ reduction, organic pollutant degradation, and organic synthesis, for energy generation and environmental purification. Except for the various metal-based semiconductors, such as metal oxides, metal sulfides, and metal oxynitrides, developed for photocatalysis, graphitic carbon nitride (g-C₃N₄) has attracted significant attention in the recent years because of its earth abundancy, non-toxicity, good stability, and relatively narrow band gap (2.7 eV) for visible light response. However, g-C₃N₄ suffers from insufficient absorption of visible light in the solar spectrum and rapid recombination of photogenerated electrons and holes, thus resulting in low photocatalytic activity. Until now, various strategies have been developed to enhance the photocatalytic activity of g-C₃N₄, including element doping, nanostructure and heterostructure design, and co-catalyst decoration. Among these methods, element doping has been found to be very effective for adjusting the unique electronic and molecular structures of g-C₃N₄, which could significantly expand the range of photoresponse under visible light and improve the charge separation. Especially, non-metal doping has been well investigated frequently to improve the photocatalytic activity of g-C₃N₄. The non-metal dopants commonly used for the doping of g-C₃N₄ include oxygen (O), phosphorus (P), sulfur (S), boron (B), and halogen (F, Cl, Br, I) and also carbon (C) and nitrogen (N) (for self-doping), as they are easily accessible and can be introduced into the g-C₃N₄ framework through different physical and chemical synthetic methods. In this review article, the structural and optical properties of g-C₃N₄ is introduced first, followed by a brief introduction to the modification of g-C₃N₄ as photocatalysts. Then, the progress in the non-metal doped g-C₃N₄ with improved photocatalytic activity is reviewed in detail, with the photocatalytic mechanisms presented for easy understanding of the fundamentals of photocatalysis and for guiding in the design of novel g-C₃N₄ photocatalysts. Finally, the prospects of the modification of g-C₃N₄ for further advances in photocatalysis is presented.     

缺陷工程调控石墨相氮化碳及其光催化空气净化应用进展

Since the pioneering work on polychlorinated biphenyl photodegradation by Carey in 1976, photocatalytic technology has emerged as a promising and sustainable strategy to overcome the significant challenges posed by energy crisis and environmental pollution. In photocatalysis, sunlight, which is an inexhaustible source of energy, is utilized to generate strongly active species on the surface of the photocatalyst for triggering photo-redox reactions toward the successful removal of environmental pollutants, or for water splitting. The photocatalytic performance is related to the photoabsorption, photoinduced carrier separation, and redox ability of the semiconductor employed as the photocatalyst. Apart from traditional and noble metal oxide semiconductors such as P25, bismuth-based compounds, and Pt-based compounds, 2D g-C₃N₄ is now identified to have enormous potential in photocatalysis owing to the special π-π conjugated bond in its structure. However, some inherent drawbacks of the conventional g-C₃N₄, including the insufficient visible-light absorption ability, fast recombination of photogenerated electron-hole pairs, and low quantum efficiency, decrease its photocatalytic activity and limit its application. To date, various strategies such as heterojunction fabrication, special morphology design, and element doping have been adopted to tune the physicochemical properties of g-C₃N₄. Recent studies have highlighted the potential of defect engineering for boosting the light harvesting, charge separation, and adsorption efficiency of g-C₃N₄ by tailoring the local surface microstructure, electronic structure, and carrier concentration. In this review, we summarize cutting-edge achievements related to g-C₃N₄ modified with classified non-external-caused defects (carbon vacancies, nitrogen vacancies, etc.) and external-caused defects (doping and functionalization) for optimizing the photocatalytic performance in water splitting, removal of contaminants in the gas phase and wastewater, nitrogen fixation, etc. The distinctive roles of various defects in the g-C₃N₄ skeleton in the photocatalytic process are also summarized. Moreover, the practical application of 2D g-C₃N₄ in air pollution control is highlighted. Finally, the ongoing challenges and perspectives of defective g-C₃N₄ are presented. The overarching aim of this article is to provide a useful scaffold for future research and application studies on defect-modulated g-C₃N₄.      

石墨相氮化碳量子点的简易水热制备和荧光性能

本文以线状石墨相氮化碳(Lg-CN)为原料,在无需强酸加入的情况下,利用简单的纯水中的水热反应成功制得了氮化碳量子点(CN QDs),并利用傅里叶变换红外光谱、X射线粉末衍射、透射电镜、X射线光电子能谱等对所得量子点的形貌和结构进行了表征,进而解释了量子点的形成机理;利用紫外-可见吸收光谱和荧光光谱对其光学性质进行了研...     

Fe掺杂g-C3N4的制备及其可见光催化性能

以硝酸铁和三聚氰胺为原料制备不同含铁量的Fe 掺杂石墨氮化碳（g-C₃N₄）. 采用X 射线衍射光谱（XRD）、紫外-可见（UV-Vis）光谱、傅里叶变换红外（FT-IR）光谱、电感耦合等离子体-原子发射光谱（ICP-AES）、荧光（PL）光谱、X光电子能谱（XPS）等分析手段对制备的催化剂进行了表征. 结果表明,铁以离子形式镶嵌在g-C₃N₄的结构单元中,影响了g-C₃N₄的能带结构,增加了g-C₃N₄对可见光的吸收,降低了光生电子-空穴对的复合几率. 以染料罗丹明B的降解为探针反应系统研究了不同含铁量对g-C₃N₄在可见光下催化性能的影响. 结果表明,m（Fe）/m（g-C₃N₄）=0.14%时,制备的Fe 掺杂g-C₃N₄表现出最佳的光催化性能,120 min 内罗丹明B的降解率高达99.7%,速率常数达到0.026 min^-1,是纯g-C₃N₄的3.2 倍. 以叔丁醇、对苯醌、乙二胺四乙酸二钠为自由基（·OH）、自由基（O₂^-·）和空穴（h_VB⁺）的捕获剂,研究了光催化反应机理.     

Fe掺杂g-C_3N_4的制备及其可见光催化性能

以硝酸铁和三聚氰胺为原料制备不同含铁量的Fe掺杂石墨氮化碳(g-C3N4).采用X射线衍射光谱(XRD)、紫外-可见(UV-Vis)光谱、傅里叶变换红外(FT-IR)光谱、电感耦合等离子体-原子发射光谱(ICP-AES)、荧光(PL)光谱、X光电子能谱(XPS)等分析手段对制备的催化剂进行了表征.结果表明,铁以离子形式镶嵌在gC3N4的结构单元中,影响了g-C3N4的能带结构,增加了g-C3N4对可见光的吸收,降低了光生电子-空穴对的复合几率.以染料罗丹明B的降解为探针反应系统研究了不同含铁量对g-C3N4在可见光下催化性能的影响.结果表明,m(Fe)/m(g-C3N4)=0.14%时,制备的Fe掺杂g-C3N4表现出最佳的光催化性能,120 min内罗丹明B的降解率高达99.7%,速率常数达到0.026 min-1,是纯g-C3N4的3.2倍.以叔丁醇、对苯醌、乙二胺四乙酸二钠为自由基(·OH)、自由基(O2-·)和空穴(h+VB)的捕获剂,研究了光催化反应机理.     

单层石墨相氮化碳负载Pt4团簇吸附O2的第一性理论研究

采用第一性原理密度泛函理论结合周期性平板模型模拟研究了Pt₄团簇吸附单层石墨相氮化碳(g-C₃N₄)的几何结构和电子性质,以及氧气在其表面上的吸附行为。同时,对比分析了氧气在纯净的石墨相氮化碳和Pt₄团簇上的吸附行为。计算结果表明, Pt₄团簇吸附在3-s-三嗪环石墨相氮化碳表面,并与四个边缘氮原子成键,形成两个六元环时为最稳定构型。Pt₄团簇倾向于吸附在三嗪环石墨相氮化碳的空位并与邻近三个氮原子成键。由于Pt与N原子较强的杂化作用,以及金属与底物之间较多电子转移增强了Pt₄团簇吸附g-C₃N₄的稳定性。另外,对比分析了氧气在纯净的g-C₃N₄和金属吸附的g-C₃N₄上吸附行为,发现金属原子的加入促进了电子转移,同时拉长了O―O键长。Pt₄吸附3-s-三嗪环g-C₃N₄比Pt₄吸附三嗪环g-C₃N₄表现出微弱的优势,表现出明显的基底扭曲以及较大的吸附能。这些结果表明,化学吸附通过调节电子结构和表面性质增强催化性能的较好方法。     

Growth, Band Structure and Optical Properties of LiSrBO3 Crystal

The bulk crystal of LiSrBO3 (8.39 g) with a size of 21mm×20mm×15mm was grown by high temperature solution growth method. The relationship between growth habit and crystal structure was discussed. The transmission spectrum shows an UV absorption edge at about 300 nm. The melting temperature of this crystal was determined to be 942 ℃ by DTA-TG measurement. The band structure of the LiSrBO3 crystal was studied by means of the first principle method. An indirect band gap was found to be about 4.0 eV,and a low dielectric constant was estimated to be about 1.9 in terms of theoretical results.