宽带隙Cu(In,Al)Se2薄膜的制备及表征

以特殊脉冲电沉积方法制备CuInSe2(CIS)前驱体薄膜, 通过真空蒸镀法在CIS薄膜上沉积Al膜, 经硒化退火后在氧化铟锡(ITO)基底上制备了Cu(InAl)Se2(CIAS)薄膜. 采用扫描电子显微镜(SEM)、X射线能谱(EDS)、X射线衍射(XRD)、X射线光电子能谱(XPS)、紫外-可见吸收光谱(UV-Vis)对其形貌、结构、成分及光学吸收性质进行了表征. 结果表明, 制备的CIAS薄膜颗粒均匀, 表面平整致密, 呈黄铜矿结构. 薄膜在可见光区具有良好的吸收, 带隙约为1.65 eV.     

一步法电化学沉积Cu(In1-x,Gax)Se2薄膜的特性

在CuCl2、InCl3、GaCl3及H2SeO3组成的酸性水溶液电沉积体系中, 对Mo/玻璃衬底上一步法电沉积Cu(In1-x, Gax)Se2(简写为CIGS)薄膜进行了研究. 为了稳定溶液的化学性质, 在溶液中加入邻苯二甲酸氢钾和氨基磺酸作为pH缓冲剂, 将溶液的pH值控制在约2.5, 并提高薄膜中Ga的含量. 通过大量实验优化了溶液组成及电沉积条件, 得到接近化学计量比贫Cu 的CIGS薄膜(当Cu与In+Ga的摩尔比为1时, 称为符合化学计量比的CIGS薄膜; 当其比值为0.8-1时, 称为贫Cu或富In的CIGS 薄膜)预置层, 薄膜表面光亮、致密、无裂纹. 利用循环伏安法初步研究了一步法电沉积CIGS薄膜的反应机理, 在沉积过程中, Se4+离子先还原生成单质Se, 再诱导Cu2+、Ga3+和In3+发生共沉积. 电沉积CIGS薄膜预置层在固态硒源280 ℃蒸发的硒气氛中进行硒化再结晶, 有效改善了薄膜的结晶结构, 且成份基本不发生变化,但是表面会产生大量的裂纹.     

Cu(SCN)2-水系电沉积制备CuSCN薄膜

Cu(SCN)2-水系电沉积制备CuSCN薄膜;p-CuSCN薄膜;电化学沉积;EDTA     

[(dien)Cu(imH)](ClO_4)_2、[(tren)Cu(imH)](ClO_4)_2中配位咪唑的离解

本文用紫外可见光谱、pH滴定等方法研究了配合物[(dien)Cu(imH)]1(ClO_4)_2、[(tren)Cu(imH))(ClO_4)_2中Cu-imH的配位和离解作用,得到了它们的稳定常数,并探索了共存配体的影响。     

[Cu(H_2O)(phen)_2](CIO_4)_2的晶体结构

标题化合物晶体属三斜晶系;空间群为P_1;晶胞参数:a=8.182(2)A,b=10.389(2)A,c=16.261(5)A,α=99.38(2)°,β=89.97(2)°,γ=113.18(2)°;Z=2,两个phen上的四个N原子和一个配位水中的O原子围绕中心体Cu原子形成一个畸变的三角双锥构型,配位水与阴离子ClO_4~-中的O原子形成氢键。     

纳米Zr(OH)4及纳米ZrO2对Cu(Ⅱ)的吸附行为

对纳米Zr(OH)4粉体及其在不同温度(350～600℃)下的煅烧产物静态吸附Cu(Ⅱ)的行为进行了研究,并考察了影响静态吸附以及解吸的因素.试验结果表明,煅烧温度越高,样品的吸附效果越差.除了600℃煅烧的样品吸附性能较差外,纳米Zr(OH)4和其它样品在溶液pH》3时对Cu(Ⅱ)有很好的吸附效果,吸附率均大于96%.在实验范围内,吸附量最高可达到26400μg/g.被吸附的Cu(Ⅱ)在低浓度的盐酸(《2.0mol/L)中即可较好的被洗脱,100℃时解吸率可达到96%,同时也有很好的富集效果.     

(2R,4S)-4-甲基-2-哌啶甲酸乙酯的合成

以S-(-)-α-苯乙胺为原料,经一锅法制得1-(1-苄基)-6-乙氧羰基-4-甲基-3,4-二氢哌啶(3),收率58.7%。以10%Pd/C为催化剂,3经催化氢化脱苄合成了4-甲基-2-哌啶甲酸乙酯(4),收率96%;4通过减压分馏得(2R,4S)-4,含量95%,其结构经1H NMR,IR和MS确证。     

Synthesis,Characterization and Crystal Structure of (PhCH2)2Sn(S2CENt2) and (PhCH2)2Sn(S2CNC4H8)2

Two new dibenzyltin bisditiocarbamates(PhCH2)2 Sn(S2CNEt2)2(1) and (PhCH2)2 Sn(S2CNC4H8)2(2) were synthesized by the reaction of dibenzyltin dichloride with dithiocarbamates and characterized by elemental analysis ,IR,^1H NMR and MS spectra.The crystal structures were determined by X-ray single crystal diffraction analysis.In both complexes,the tin atom is six-coordinated in a distorted octahedral configuration.In the crystals of 1,the molecular packing in unit cell reveals that the two adjacent molecules are symmetrically linked to each other in dimers by two Sn S interactions of 0.3816nm.In the crystals of 2,the molecules are packed in the unit cell in one-dimensional chain structure linked by weaker intermolecular S S conmtacts.     

光学纯的(4S,8R)-和(4S,8S)-1-■烯-8,9-二醇的改进合成法

本文提出了一个改进的合成两个光学异构纯的(4S)-1-■烯-8,9-二醇的方法,其优点是简便、有效,适于克量级制备.     

铜锌锡硫硒薄膜太阳能电池一价金属替位的研究进展

铜锌锡硫硒(CZTSSe)电池具有组成元素丰度高且环境友好、光吸收系数高、带隙可调、高稳定性等优点,是一类非常有发展前景的新型薄膜太阳能电池.目前,CZTSSe电池最高认证效率为12.6％,与商品化铜铟镓硒(CIGS)电池相比仍然有较大差距,特别是开路电压(VOC)和填充因子(FF)偏低.开压损耗是制约CZTSSe器件...     

Influence of Thermal Treatments on In-depth Compositional Uniformity of CuIn(S,Se)2 Thin Films

CuIn(S,Se)₂ thin films were prepared by thermal crystallization of co-sputtered Cu-In alloy precursors in S/Se atmosphere. In-depth compositional uniformity is an important prereq-uisite for obtaining device-quality CuIn(S,Se)₂ absorber thin films. In order to figure out the influence of heat treatments on in-depth composition uniformity of CuIn(S,Se)₂ thin films, two kinds of reaction temperature profiles were investigated. One process is "one step profile", referring to formation of CuIn(S,Se)₂ thin films just at elevated temperature (e.g. 500 oC). The other is "two step profile", which allows for slow diffusion of S and Se elements into the alloy precursors at a low temperature before the formation and re-crystallization of CuIn(S,Se)₂ thin films at higher temperature (e.g. first 250 oC then 500 oC). X-ray diffrac-tion studies reveal that there is a discrepancy in the shape of (112) peak. Samples annealed with "one step profile" have splits on (112) peaks, while samples annealed with "two step profile" have relatively symmetrical (112) peaks. Grazing incident X-ray diffraction and en-ergy dispersive spectrum measurements of samples successively etched in bromine methanol show that CuIn(S,Se)₂ thin films have better in-depth composition uniformity after "twostep profile" annealing. The reaction mechanism during the two thermal processing was also investigated by X-ray diffraction and Raman spectra.     

Polyol-mediated synthesis of Cu2ZnSn(S,Se)4 kesterite nanoparticles and their use in thin-film solar cells

Cu₂ZnSnS₄ kesterite nanoparticles (CZTS) with a particle diameter of 10–20 nm are prepared by a polyol-mediated synthesis with diethylene glycol as the liquid phase. The polyol – a high-boiling multidentate alcohol − allows controlling the particle size and agglomeration as well as preparing readily crystalline nanoparticles. The as-prepared kesterite nanoparticles exhibit an overall composition of Cu_1.56Zn_1.29Sn_1.16S_4.59 and a band gap of 1.37 eV. As a first test, thin-film solar cells are manufactured after layer deposition of the as-prepared CZTS nanoparticles and conversion to Cu₂ZnSn(S,Se)₄ (CZTSSe) via gas-phase selenization. The volume increase of about 15% due to the CZTS-to-CZTSSe conversion supports the formation of a dense layer, reduces the interparticulate surfaces and leads to a reduction of the band gap to 1.14 eV. The chemical composition of the as-prepared CZTS nanoparticles and of the deposited CZTSSe thin film prior and after selenization are studied in detail by energy-dispersive X-ray spectroscopy, Raman spectroscopy and X-ray fluorescence analysis. All these methods confirm the intended copper-poor and zinc-/tin-rich CZTS/CZTSSe composition. The resulting thin-film solar cells show an open-circuit voltage of 247.3 mV, a short-circuit current density of 21.3 mA/cm², a fill factor of 41.1% and a power-conversion efficiency of 2.2%.     

Evolution of Cu(In,Ga)Se2 surfaces under water immersion monitored by X-ray photoelectron spectroscopy

Cu(In,Ga)Se₂ absorbers were immerged in deionized water for different times, and specific chemical evolutions were monitored thanks to X-ray photoemission spectroscopy. Cu(In,Ga)Se₂ related dissolution products were studied in water through induced coupled plasma optical emission spectroscopy. From those analyses, specific surface network disorganization was observed, with Cu migration towards the surface, leading to different kinetics of oxidation and dissolution for each element that could be quantified.     

Optoeletronic investigation of Cu2ZnSn(S,Se)4 thin-films & Cu2ZnSn(S,Se)4/CdS interface with scanning probe microscopy

The kesterite-structured semiconductor Cu₂ZnSn(S,Se)₄ (CZTSSe) is prepared by spin coating a non-hydrazine precursor and annealing at Se atmosphere. Local electrical and optoelectronic properties of the CZTSSe thin-film are explored by Kelvin probe force microscopy and conductive atomic force microscopy. Before and after irradiation, no marked potential bending and very low current flow are observed at GBs, suggesting that GBs behave as a charge recombination site and an obstacle for charge transport. Furthermore, CdS nano-islands are synthesized via successive ionic layer adsorption and reaction (SILAR) method on the surface of CZTSSe. By comparing the work function and current flow change of CZTSSe and CdS in dark and under illumination, we demonstrate photo-induced electrons and holes are separated at the interface of p-n junction and transferred in CdS and CZTSSe, respectively.     

太阳能电池材料-铜锌锡硫化合物薄膜制备及器件应用研究进展

锌黄锡矿结构的CZTS（铜锌锡硫）材料与目前在薄膜太阳能电池领域表现出色的黄铜矿结构的CIGS（铜铟镓硒）材料具有相似的晶体结构,且CZTS有着很好的光电性能,组成元素在地球上含量丰富,安全无毒,非常适合用来发展高效、廉价的太阳能电池.近期CZTS类太阳能电池的最高效率已达到12.6%,在科研和产业领域引起了广泛关注.在简介了“新星”太阳能电池材料CZTS的性质及薄膜太阳能电池器件的基本结构之后,重点总结了CZTS薄膜的制备方法（真空、非真空法）以及相应器件效率,其中对众多非真空制备法进行了独到的归类总结.最后,对CZTS薄膜的优化方法进行了分析,并对其未来发展方向做了展望.