Langmuir probe measurements during plasma-activated chemical vapor deposition in the system argon/hydrogen/dicyclopentadienyldimethylhafnium

A Langomir probe investigation of Ar/H₂/Cp₂HfMe₂ plasmas is described. The probe measurements were performed for various discharge conditions. The mean electron energy and electron density were measured for various power, gas flows of argon, and hydrogen and precursor concentrations. Addition of the precursor into the discharge resulted in an appreciable decrease in the electron density and an increase in the mean electron energr. Whereas a transition front the a-mode to the -mode has been observed with power rise in the Ar/H₂ plasmas without precursor, in the presence of the precursor the plasota -mode remained unchanged in the power range investigated.     

Space- and direction-resolved Langmuir probe diagnostic in rf planar discharges

To consider the anisotropy of the plasma in the sheath regions, Langmuir probe characteristics are measured using a direction-resolving technique. The operation frequency, related to the neutral gas density (/p₀), is chosen in such a way that the electron velocity distribution function (VDF) may be regarded as frozen and the probe diagnostic may be performed without time resolution. In order to prevent convolution of the VDF from the effect of the time-dependent plasma potential, the rf component of the probe bias voltage is compensated to a minimum. The plasma potential, the mean energy of the electrons, and the electron density, averaged over the discharge bulk, are presented as functions of the discharge current and the neutral gas pressure for the O₂ gas. By means of a reactor model based on the theory of plane probes and using the plasma parameter measured, the sheath and bulk portions of the maintaining voltage are separated. In this procedure the thickness of the sheaths in front of the electrodes and the phase difference between discharge current and maintaining voltage are also obtained.     

Langmuir probe characteristics in RF glow discharges

The current-voltage characteristics of Langmuir probes in rf glow discharges can be misinterpreted by the effects of rf time averaging, ionization near a probe, and expansion of the probe sheath. This paper presents a new Langmuir probe technique which can be used to determine the plasma parameters in rf glow discharges. Simple expressions for the time averaged I-V characteristics are derived for the cases of fully sinusoidal and partially rectified plasma potential waveforms. Examples of corresponding I-V characteristics obtained from argon rf glow discharges are also illustrated.     

Langmuir probe measurements of axial variation of plasma parameters in 27.1 MHz rf oxygen planar discharges

Langmuir probe studies have been performed on rf (27.1 MHz) discharges in O₂ under planar reactor conditions to determine the axial variation of the plasma parameters (positive ion density, electron temperature, and dc space potential) as a function of pressure (20–220 Pa) and power (10–150 W) or current (0.1–2 A). By monitoring the second derivative of the I–V probe characteristics, the suppression of the rf component in the probe circuit can be optimized. Referring to this problem, numerical studies provide relations for the determination of the residual rf component as well as of the dc component of the plasma potential at incomplete rf compensation. The positive ion density is obtained from the ion saturation currents. Here the effect of collisions between ions and neutral particles within the probe sheath (for p> 100 Pa) is considered. The electron energy distribution function is found to be of the Maxwellian type for all discharge conditions investigated here. If the pressure and the power exceed critical values, the axial charge carrier distribution is characterized by a valley formation in the bulk plasma center. This fact demonstrates that secondary electron emission due to ion impact on the electrode surfaces and following ionization by these electrons near the sheaths in front of the electrodes are significant processes for sustaining the discharge. At low pressures (p60 Pa) the dc plasma potential was found to be identical with the half-peak maintaining voltage of the discharge, in agreement with the model idea of a symmetric rf planar discharge where the rf voltage drop across the bulk plasma can be neglected. For growing pressure, however, the plasma system moves gradually toward a situation where the V-I characteristics of the discharge are significantly controlled by processes in the bulk plasma. This transition depends on the current density.     

Ti-Si-N films prepared by plasma-enhanced chemical vapor deposition

Ti-Si-N thin films were deposited on HSS substrates at 560°C using plasmaenhanced chemical vapor deposition. Feed gases used were TiCl₄, SiCl₄, N₂, and H₂. The composition of the films could be controlled well through adjustment of the mixing ratio of the chlorides in the feed gases. The Si content in the film varied in the range of O to 40 at. %. It was jbund that a small addition of Si to a TiN film improved the morphology significantlv, showing dense and glasslike structure. Also a much smootherand more homogeneous interface between thefilm and the substrate was obtained. The Ti-Si- N films containing 10–15 at. % Si showed the maximal microhardness value of about 6350 kgf/mm², much higher than that of TiN films.     

Functionalization of parylene during its chemical vapor deposition

Two possible mechanisms for the reaction of four halogenated (metha)acrylate‐based molecules with Parylene [poly (paraxylylene)] during its chemical vapor deposition were proposed. The chemical reactivity of acrylate double bond with the paraxylylene biradical was calculated for all four (metha)acrylate‐based molecules. These calculations allowed the evaluation of the energetically favorable mechanism and indeed a direct correlation was found between both predicted and experimental reactivities. Next, the reactivity of the (metha)acrylate‐modified Parylene films was evaluated through their reaction with different amines. The obtained amidated Parylene films were characterized with X‐ray photoelectron spectroscopy, Kaiser test for primary amines, and fluorescence microscopy. The strong reactivity of (metha)acrylate‐modified Parylene films toward nucleophilic substitution emphasizes a general method for the functionalization of self‐supported Parylene films grown on the reacting solutions using the novel solid on liquid deposition process. This paves the way to the development of multifunctional materials in a one‐step process resulting from the deposition Parylene over liquid patterns. © 2011 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2011     

Measurement of Spatial Distributions of Electron Density and Electron Temperature in Direct Current Glow Discharge by Double Langmuir Probes

The spatial distributions of electron temperature and density in a dc glow discharge that is created by a pair of planar electrodes were obtained by using double Langmuir probes. The contribution of double Langmuir probes measurement is to provide a relatively quantitative tool to identify the electron distribution behavior. Electrons gain energy from the imposed electric field, and electron temperature (T_e) rises very sharply from the cathode to the leading edge of the negative glow where T_e reaches the maximum. In this region, the number of electrons (N_e) is relatively small and does not increase much. The accelerated electrons lose energy by ionizing gas atoms, and T_e decreases rapidly from the trailing edge of the negative glow and extends to the anode. N_e was observed to increase from the cathode to the anode, which is due to the electron impact ionization and electron movement. The electron density was observed to increase with increasing discharge voltage while the electron temperature remained approximately. At 800 V and 50 mTorr argon glow discharge, Te ranged from 15 to 52 eV and Ne ranged from 6.3×10⁶/cm³ to 3.1×10⁸/cm³ in the DC glow discharge, and T_e and N_e were dependent on the axial position.     

How boron incorporation during Si1−xGex chemical vapor deposition degrades the Ge profile

The effect of boron incorporation during chemical vapor deposition of SiGe thin films from silane, germane, diborane, and hydrogen gas mixtures is investigated. It is shown that boron incorporation during SiGe thin-film growth degrades the Ge profile under certain growth conditions when the boron concentration is high enough (>10¹⁹ cm⁻³). In single-wafer atmospheric-pressure processes we find that no Ge concentration depression occurs at deposition temperatures above 675 °C. In multi-wafer atmospheric-pressure processes we find an increasingly occurring depression of the Ge concentration along the wafer stack, even at temperatures above 675 °C. In low-pressure processes, high-level in-situ doping of SiGe with boron is possible at temperatures as low as 550 °C without any degradation of the Ge profile. Thus LPCVD is superior to APCVD with respect to high-level in situ doping of SiGe with boron. The presence or absence of Ge profile degradation in boron-doped SiGe thin films is explained by the discussion of growth rate enhancement phenomena. Received: 15 September 1997 / Accepted: 7 November 1997     

On the plasma chemistry of the C/H system relevant to diamond deposition processes

The chemistry of hydrogen-rich hydrocarbon-hydrogen mixtures is of primary interest for the understanding of the low-pressure synthesis of diamond. We per formed experiments under well-defined conditions like temperature, pressure, initial gas composition, etc. The gas composition at the end of a flow reactor was analyzed by a calibrated mass spectrometer and compared to results obtained from the Chemkin computer code. Residence thne in the reactor as well as other process parameters were similar to those of diamond-growing PA CVD processes performed earlier with the same experimental set-rip. Modeling and experiment under isothermal conditions show quantitative agreement. We realized time-resolved mass .spectrometry by means of a helium-flushed gas sampling probe. There is evidence that the commonly used reaction kinetic data for the dissociation C₂H₆ (+ M) 2CH,(+M) gives 2 too small C₂H₄ concentrations for hydrogen-rich conditions. This could be attributed to the poorly known third-body efficiencies of the H₂ molecules compared to Ar or C₂H₆ from which kinetic data are commonly derived.     

Combinatorial synthesis of carbon nanotubes by the catalytic chemical vapor deposition method

Summary Bimetallic (Fe-Co) catalyst samples prepared from different precursors over various supports were tested in carbon nanotube (CNT) production. In order to quicken the evaluation of the performance of the catalysts a combinatorial arrangement was used.</o:p>     

Synthesis,characterization, and thermal properties of novel silicon 1,1,3,3-tetramethylguanidinate derivatives and use as single-source chemical vapor deposition precursors

A series of chemical vapor deposition (CVD) precursors have been synthesized by a single-step reaction of 1,1,3,3-tetramethylguanidine and a variety of silicon chlorides. The structures of the 1,1,3,3-tetramethylguanidinate-based compounds were verified by ¹H NMR, ¹³C NMR, XPS, EI-MS, and elemental analysis. The thermal stability, transport behavior, and vapor pressures of these compounds were evaluated by simultaneous thermal analyses (STA). These compounds are highly stable and those in liquid form are very volatile. Silicon carbonitride (SiCN) thin films were prepared by using bis (tetramethylguanidine)-dimethyl-silane as the precursor in helicon wave plasma chemical vapor deposition (HWP-CVD). The properties of the films were investigated by SEM, AFM, and XPS. The results showed that the films have good uniformities, low friction coefficient, and high hardness, enabling the films for fabrication of semiconductor devices.     

Synthesis of TiO2 on different substrates by chemical vapor deposition for photocatalytic reduction of Cr(VI) in water

TiO₂ loaded on several substrates such as carbon fiber, aluminum plate, silica plate, and glass plate was prepared using the chemical vapor deposition (CVD) method for the photocatalytic reduction of Cr(VI) in water with the presence of ethanol under Ultraviolet (UV) illumination. As‐prepared samples were characterized by X‐Ray Diffraction (XRD), X‐ray photoelectron spectroscopy (XPS), Brunauer–Emmett–Teller (BET), and scanning electron microscopy (SEM). The catalyst with TiO₂ loaded on carbon fiber possessed an extremely large surface area (1,463,91 m²/g), while the other catalysts possessed small surface areas (0.05–0.21 m²/g). The photocatalytic activity of TiO₂ loaded on carbon fiber, which was determined by the conversion of Cr(VI) and the degradation of chemical oxygen demand (COD), was much higher than that of other catalysts. The reusability of TiO₂ loaded on carbon fiber catalyst exhibited almost the same activity as the fresh catalyst. The results indicated that TiO₂ loaded on carbon fiber is feasible for practical application.     

Catalytic effect of iron wires on the syntheses of ammonia and hydrazine in a radio-frequency discharge

The catalytic effect of iron wires on plasma syntheses of ammonia and hydrazine has been studied in the nitrogen-hydrogen plasma prepared using rf discharge at a pressure of 650 Pa (5 Torr). The product was mainly ammonia including a small amount of hydrazine. When iron wires were placed in the plasma downstream of the gas flow, the yields of both products increased, about two times in ammonia and two orders of magnitude in hydrazine. The yields increased with increasing number of wires (the surface area of the catalyst). The dissociative adsorption of nitrogen molecules and/or molecular ions on the iron surface and the formation of NH_x by the reaction with hydrogen in the plasma followed by the formation of NH₃ or N₂H₄ are considered as a reaction scheme. This is supported by the identification of NH₃ with XPS of the surface of iron wires.Partly presented at the 10th International Symposium on Plasma Chemistry, August 4–9, 1991, Bochum, Germany.     

Thermodynamics and kinetics of initial gas phase reactions in chemical vapor deposition of titanium nitride. Theoretical study of TiCl4 ammonolysis

Thermodynamic equilibrium and kinetics of the gas‐phase reaction between TiCl₄ and NH₃ have been studied computationally using results from recent quantum mechanical calculations of titanium tetrachloride ammonolysis. 1 These calculations were based upon the transition state theory for the direct reactions and RRKM theory for the reactions proceeding via intermediate complex. Rate constants for the barrierless reactions were expressed through the thermodynamic characteristics of the reagents and products using a semiempirical variational method. The kinetic simulation of the gas‐phase steps of CVD was performed within a model of a well‐stirred reactor at temperatures 300–1200 K and residence times between 0.1–2 s. At temperatures below 450 K formation of donor–acceptor complexes between TiCl₄ and NH₃ is the dominating process. At higher temperatures sequential direct ammonolysis takes place. At typical LPCVD conditions the only product of the first step of ammonolysis, TiCl₃NH₂, is formed in substantial amount. © 2001 John Wiley & Sons, Inc. J Comput Chem 22: 1366–1376, 2001     

Edelfosine disturbs the sphingomyelin-cholesterol model membrane system in a cholesterol-dependent way - the Langmuir monolayer study

Synthetic alkyl-lysophospholipids, represented by edelfosine (ED), reveal strong anticancer activity and therefore are promising drugs used in anticancer therapy. Primary target for edelfosine is cellular membrane, which is in contrast to traditional cytostatics affecting DNA. The mechanism of antitumor activity of edelfosine was hypothesized to be related to its accumulation in membrane rafts. Inspired by these findings, we have performed the Langmuir monolayer studies on the influence of edelfosine on systems composed of sphingomyelin (SM) and cholesterol (Chol), being the principal components of membrane rafts. Sphingomyelin-cholesterol proportion in monolayers was varied to reflect the composition of solely membrane rafts (SM/Chol=2:1) and contain excess of cholesterol (SM/Chol=1:1 and 1:2). Into these systems, edelfosine was added in various concentrations. The analysis of surface pressure-area isotherms, complemented with films visualization with Brewster angle microscopy (BAM) allowed us to compare the effect of edelfosine on condensation and ordering of SM/Chol monolayers. The results evidenced that the influence of ED on the interactions in model membranes and its fluidizing effect is highly cholesterol-dependent. The strongest decrease of monolayer ordering was observed for model raft system, while the excess of cholesterol present in the remaining mixtures was found to weaken the fluidizing effect of the drug.     

An overall mechanism for the deposition of plasma polymers from methane in a low-pressure argon plasma jet

An overall mechanism for plasma polymer deposition from a methane-seeded argon plasma jet was established from experimental measurements and a simplified model of reaction kinetics within the plasma jet. Total mass deposition rates were obtained at various substrate positions and methane flow rates. Methane consumption was estimated from residual gas analysis. The influence of substrate coolant temperature on deposition rate was evaluated. The model was based on particle densities, jet temperature, and jet velocity data published previously, and reaction rate constants from the literature were used. No adjustable parameters were employed in this model. Experimental results for total deposition rate and methane consumption were in good agreement with model predictions. The overall deposition mechanism consists of three steps: Penning ionization of methane by excited argon neutrals, followed by dissociative recombination of CN _x ⁺ to yield CH, followed by incorporation of CH into the growing film upon impact. Contributions of species other than CH to the total deposition rate are minor, and adsorption is not a prerequisite for incorporation into the growing film.     

Statistical thermodynamics approach for estimation of the interaction parameters in the mixed Langmuir films at the water/air interface

The treatment of two-dimensional system of three components of molecules of different molecular sizes, adapted from statistical thermodynamics, is used to derive parameters which could be derive parameters which could be related to the interaction between molecules in the mixed Langmuir films formed at the water/air interface.     

Numerical and experimental analysis of the plasma in the synthesis of polyaniline

A numerical and experimental study of the plasma variables in the synthesis of polyaniline in radio‐frequency (RF) glow discharges is presented. The plasma variables were measured on the basis of data collected by electrostatic Langmuir probes placed along the reactor. The results showed the distribution of the electric potential and the electronic energy and density during the polymerization reactions. The region with the lowest energy was the zone adjoining the grounded electrode, whereas the maximum energy was located near the RF electrode. In the second zone, the energy was around twice that of the grounded zone, and both were beyond the typical atomic bonding energy found in most organic polymers. © 2003 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 41: 1501–1508, 2003     

Modeling of the elementary gas-phase reaction during chemical vapor deposition of silicon carbide from CH3SiCl3/H2

We established a gas-phase, elementary reaction model for chemical vapor deposition of silicon carbide from methyltrichlorosilane (MTS) and H₂, based on the model developed at Iowa State University (ISU). The ISU model did not reproduce our experimental results, decomposition behavior of MTS in the gas phase in an environment with H₂. Therefore, we made several modifications to the ISU model. Of the reactions included in existing models, 236 were lacking in the ISU model, and thus were added to the model. In addition, we modified the rate constants of the unimolecular reactions and the recombination reactions, which were treated as a high-pressure limit in the ISU model, into pressure-dependent rate expressions based on the previous reports (to yield the ISU+ model), for example, H₂(+M) → H + H(+M), but decomposition behavior remained poorly reproducible. To incorporate the pressure dependencies of unimolecular decomposition rate constants, and to increase the accuracies of these constants, we recalculated the rate constants of five unimolecular decomposition reactions of MTS using the Rice-Ramsperger-Kassel-Marcus method at the CBS-QB3 level. These chemistries were added to the ISU+ model to yield the UT2014 model. The UT2014 model reproduced overall MTS decomposition. From the results of our model, we confirmed that MTS mainly decomposes into CH₃ and SiCl₃ at the temperature around 1000°C as reported in the several studies.