首页 | 本学科首页   官方微博 | 高级检索  
相似文献
 共查询到20条相似文献,搜索用时 31 毫秒
1.
Electronic transport through the quantum dot with two energy levels is studied by means of the non-equilibrium Green functions and the slave boson method. Special attention is focused on an interplay between quantum inference of traveling waves and electronic correlations. It is shown that if impurity states are far below the Fermi level the transport is through the highest state only. Interference processes become relevant when the levels are shifted towards the mixed valence regime.  相似文献   

2.
We investigate transport through a perfect quantum wire with a side-coupled quantum dot under an ac field. Time-averaged complex conductance is formulated by using the nonequilibrium Green function (NGF) method. We find that the electron-photon interaction together with the quantum interference of electron wave function can lead to anti-resonance in the conductance, which is then useful for tuning coherence and phases of electrons. Meanwhile, we study the temperature dependence of the conductance. Interestingly, a peak-structure can be developed at the Fano resonance levels with increasing temperatures.  相似文献   

3.
An analytical formula of the tunneling current through a coupled double-quantumdot system in the presence of a time-dependent electric field is obtained by using the Keldysh nonequilibrium Green's function technique. The dependence of the time-averaged current on the frequency of the electric field, as well as the dependence of the multiphoton assisted tunneling on the strength of the electric field are studied. The features of I-Vdc characteristic are also investigated. Besides, we present a simplified formula which can be used to determine the heights of the resonant peaks conveniently.  相似文献   

4.
赵宏康  王清 《计算物理》2005,22(2):149-154
应用非平衡格林函数方法研究通过环形碳纳米管-量子点耦合系统的介观输运.相干隧穿与环形碳纳米管和量子点各自的能级结构有强烈的依赖关系,阿哈郎诺夫-玻姆效应使能级周期性变化,隧穿电流则随磁通量作周期性振荡.环形碳纳米管的具体纳米结构显示出金属-半导体相变特性,这种行为也在输出电流中体现出来.子系统量子能级的匹配与失配关系在介观输运过程中起重要作用.  相似文献   

5.
We investigate the linear and nonlinear transport through a single level quantum dot connected to two ferromagnetic leads in Kondo regime, using the slave-boson mean-field approach for finite on-site Coulomb repulsion. We find that for antiparallel alignment of the spin orientations in the leads, a single zero-bias Kondo peak always appears in the voltage-dependent differential conductance with peak height going down to zero as the polarization grows to P=1. For parallel configuration, with increasing polarization from zero, the Kondo peak descends and greatly widens with the appearance of shoulders, and finally splits into two peaks on both sides of the bias voltage around P~0.7 until disappearing at even larger polarization strength. At any spin orientation angle θ, the linear conductance generally drops with growing polarization strength. For a given finite polarization, the minimum linear conductance always appears at θ=π.  相似文献   

6.
We investigate theoretically the electron transport of a two-level quantum dot irradiated under a weak laser field at low temperatures in the rotating wave approximation. Using the method of the Keldysh equation of motion for nonequilibrium Green function, we examine the conductance for the system with photon polarization perpendicular to the tunnelling current direction. It is demonstrated that by analytic analysing and numerical examples, a feature of conductance peak splitting appears, and the dependence of conductance on the incident laser frequency and self-energy are discussed.  相似文献   

7.
Kondo transport properties through a Kondo-type quantum dot (QD) with a side-coupled triple-QD structure are systematically investigated by using the non-equilibrium Green's function method. We firstly derive the formulae of the current, the linear conductance, the transmission coefficient, and the local density of states. Then we carry out the analytical and numerical studies and some universal conductance properties are obtained. It is shown that the number of the conductance valleys is intrinsically determined by the side-coupled QDs and at most equal to the number of the QDs included in theside-coupled structure in the asymmetric limit. In the process of forming the conductance valleys, the side-coupled QD system plays the dominant role while the couplings between the Kondo-type QD and the side-coupled structure play the subsidiary and indispensable roles. To testify the validity of the universal conductance properties, another different kinds of side-coupled triple-QD structures are considered. It should be emphasized that these universal properties are applicable in understanding this kind of systems with arbitrary many-QD side structures.  相似文献   

8.
By applying the slave boson technique, we have studied the electron transport through double-dot Aharonov-Bohm interferometer in the Kondo regime. For the system with symmetric quantum dots, the linear conductance is shown to be enhanced by Kondo effect, but it is suppressed in the deep dot level regime in the presence of nonzero magnetic flux. The Aharonov-Bohm oscillations of the conductance are also investigated.  相似文献   

9.
Based on the Kubo formula for an electron tunneling junction, we revisit the nonequilibrium transport properties through a quantum dot. Since the Fermi level of the quantum dot is set by the conduction electrons of the leads, we calculate the electron current from the left side by assuming the quantum dot coupled to the right lead as another side of the tunneling junction, and the other way round is used to calculate the current from the right side. By symmetrizing these two currents, an effective local density states on the dot can be obtained, and is discussed at high and low temperatures, respectively.  相似文献   

10.
We develop a theory for the nonequilibrium coherent transport through a mesoscopic region, based on thenonequilibrium Green function technique. The theory requires the weak coupling bet. ween the central mesoscopic regionand the multiple electrodes, but allows arbitrary hopping and interaction in the central region. An equation determiningthe nonequilibrium distribution in the central interacting region is derived and plays an important role in the theory.The theory is applied to two special cases for demonstrations, revealing the novel effects associated with the combinationof phase coherence, Coulomb interaction, and nonequilibrium distribution.  相似文献   

11.
Using an equation of motion technique, we investigate the spin-polarized transport through a quantum dot coupled to ferromagnetic leads and a mesoseopie ring by the Anderson Hamiltonian. We analyze the transmission probability of this system in both the equilibrium and nonequilibrium cases, and our results reveal that the transport properties show some noticeable characteristics depending upon the spin-polarized strength p, the magnetic flux Ф and the number of lattice sites NR in the mesoseopic ring. These effects might have some potential applications in spintronics.  相似文献   

12.
The quantum electronic transport through a precessing magnetic spin coupled to noncollinearly polarized ferromagnetic leads (F-MS-F) has been studied in this paper. The nonequilibrium Green function approach is used to calculate local density of states (LDOS) and current in the presence of external bias. The characters of LDOS and the electronic current are obtained. The tunneling current is investigated for different precessing angle and different configurations of the magnetization of the leads. The investigation revea/s that when the precessing angle takes θ 〈 π /2 and negative bias is applied, the resonant tunneling current appears, otherwise, it appears when positive bias is applied. When the leads are totally polarized and the precessing angel takes O, the tunneling current changes with the configuration of two leads; and it becomes zero when the two leads are antiparallel.  相似文献   

13.
黄睿  吴绍全  闫从华 《计算物理》2011,28(1):131-137
借助单杂质Anderson模型哈密顿量,及利用格林函数和运动方程等理论,研究旁耦合于介观环和铁磁电极的量子点系统中的极化输运特性.结果表明,通过调节点-环耦合强度、铁磁电极中的极化强度、磁矩相对取向及温度等,均能实现控制体系中自旋极化电流的目的,达到自旋阀效应.为此系统作为一种新的自旋电子材料提供理论依据.  相似文献   

14.
We investigate the spin accumulation in a double quantum dot Aharonov-Bohm (AB) interferometer in which both the Rashba spin-orbit (RSO) interaction and intradot Coulomb interaction are taken into account. Due to the existence of the RSO interaction, the electron, flowing through different arms of the AB ring, will acquire a spin-dependent phase factor in the tunnel-coupling strengths. This phase factor will induce various interesting interference phenomena. It is found that the electrons of the different spin directions can accumulate in the two dots by properly adjusting the bias and the intradot level with a fixed RSO interaction strength. Moreover, both the magnitude and direction of the spin accumulation in each dot can be conveniently controlled and tuned by the gate voltage acting on the dot or the bias on the lead.  相似文献   

15.
The development of dynamic single-electron sources has made it possible to observe and manipulate the quantum properties of individual charge carriers in mesoscopic circuits. Here, we investigate multi-particle effects in an electronic Mach–Zehnder interferometer driven by a series of voltage pulses. To this end, we employ a Floquet scattering formalism to evaluate the interference current and the visibility in the outputs of the interferometer. An injected multi-particle state can be described by its first-order correlation function, which we decompose into a sum of elementary correlation functions that each represent a single particle. Each particle in the pulse contributes independently to the interference current, while the visibility (given by the maximal interference current) exhibits a Fraunhofer-like diffraction pattern caused by the multi-particle interference between different particles in the pulse. For a sequence of multi-particle pulses, the visibility resembles the diffraction pattern from a grid, with the role of the grid and the spacing between the slits being played by the pulses and the time delay between them. Our findings may be observed in future experiments by injecting multi-particle pulses into a Mach–Zehnder interferometer.  相似文献   

16.
刘瑞金  王传奎 《计算物理》2009,26(4):624-628
从第一性原理出发,采用杂化的密度泛函理论和弹性散射格林函数法,计算有机分子4,4'-二巯基二苯醚分子的电子结构并研究其电子输运性质.计算结果表明,电场对分子系统电子结构有明显的影响,电流、电导表现为非线性变化,与不考虑电场作用时相比,更为接近实验结果.  相似文献   

17.
We propose a Mach-Zehnder interferometer (MZI) based on coupled dielectric pillars. It is composed of single-row pillar coupled waveguide modulating arms and three-row pillar waveguide 3 dB couplers. The slow light property and transmission loss of the single-row pillar modulating arm are optimized by the plane wave expansion method. A short 3dB coupler is designed based on the modes transformation in three-row pillar waveguide. Finite difference time domain simulations prove the validity of this MZI and show that it has low insertion loss of 1.1 dB and high extinction ratio of 〉 12 dB.  相似文献   

18.
By means of the transfer matrix approach, the linear conductance spectrum for electronic transport through a T-shaped quantum waveguide is calculated. The resonant peaks and the antiresonant dips in the conductance spectrum are mainly focused. The previous prediction about their positions by other theoretical approaches is checked. In addition, a function of spin filtering is suggested based on the interplay of the resonance and antiresonance in this T-shaped quantum waveguide.  相似文献   

19.
We investigate four electrons confined in a coupled three-layer quantum dot, by the exact diagonalization method. A vertical magnetic field to the confinement plane is considered. The ground-state electronic structures and angular momentum transitions are investigated. We find that for four-electron Q Ds, the Series of the magic numbers in three-layer QDs are different from those in one-, and two-layer Q Ds. These are connected to the exchange and rotational symmetries of the systems.  相似文献   

20.
利用GW近似和非平衡格林函数结合的方法 研究了耦合到两个金属触点的N24B24分子的电子传输性. 计算结果表明,在单个和多个原子触点的态密度曲线上分别出现四个和三个谐振隧峰. 在I-V特性曲线上出现断路状态和微分负阻效应. 对于一、四、六、八原子的触点在电压分别在 ∓4.5、∓4、∓4.6、∓4.3 V表现出微分负阻效应行为. I-V特性在以低电压断开状态,呈独立的触点类型. I-V曲线取决于触点类型,并且表明N24B24分子呈现半导体的特性.  相似文献   

设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号