Online deposition measurement and slag bubble behavior in the reduction zone of pulverized coal staged combustion

An online thermogravimetric measurement method of ash deposition was developed. Ash deposition and slag bubble in the reductive zone of pulverized coal staged combustion were investigated. Firstly, a steady pulverized coal staged combustion was achieved in an electrically heated down-fired furnace. Additionally, gas species, coal conversion, and particle size distribution were quantitatively measured. Secondly, real-time ash deposition rates at different temperatures (1100–1400 °C) were measured, and deposition samples were carefully collected with an N₂ protection method. The morphologies of collected samples were investigated through a scanning electron microscope. It was found that the deposited ash transformed from a porous layer composed of loosely bound particles to a solid layer formed by molten slag. Different behaviors of the slag bubble were observed, and bubble sizes were significantly affected by the deposition temperature. A deposition and bubble formation mechanism was proposed and used for modeling. Results showed that the proposed model well predicted the observed ash deposition and bubble formation process.     

Preparation of well-structured organosilane layers on silica

An efficient grafting process of monofunctional alkylchlorosilanes (general formula: CH₃-(CH₂) _n-1-Si(CH₃)₂Cl with n varying from 4 to 30) onto silica nanoparticules was developed by varying the surface preparation and the solvent used for the deposition process. A vapor phase deposition method was considered as reference and silicon wafers with a native SiO₂ layer were used as a model surface of the silica particles. The grafting method was evaluated by studying the wettability and the grafting densities of the resulting monolayers. The chain conformation of the monolayers was determined by comparing the thickness measured by SE ellipsometry and AFM. By comparing the solvent and vapor phase deposition methods, it was demonstrated that the deposition process had a large influence on the structure of the grafted monolayers. The same structure as from a vapor phase method can be obtained from a solvent deposition process by a suitable choice of the solvent and by a strict cleaning of the surface before deposition. The grafting of much longer chains of such silane-terminated polyethylenes with different molar mass on the silica surface was also investigated in order to study the effects of the chain length on the grafting density and the layer structure. For both the short alkylchlorosilanes and polymeric grafted chains, the proposed organization of the grafted chains at the silica surface is found to be strongly dependent on the length of the alkyl chains.     

基于机群系统的薄膜淀积并行计算

基于集群并行系统,实现了运用蒙特卡罗方法模拟100×100×100个原子Si衬底Al薄膜淀积过程的并行计算.采用了重叠的区域分解法和异步通信的有效并行计算策略,将区域的合理划分与薄膜淀积的空间填补的拓扑几何机理结合起来,着重减少通信耗费,提高算法的并行性能,大量地缩短了薄膜淀积模拟计算时间,从而为运用计算机方法模拟薄膜淀积、完成薄膜材料淀积的预测提供了更高效的手段.     

规整膜系层厚允许误差的研究

提出了一种通过计算机模拟薄膜的淀积过程来计算规整膜系层厚允许误差的方法,所计算的层厚允许误差不仅取决于膜系的设计结构,还与薄膜的淀积工艺、镀膜设备的监控精度有关.实验结果表明:采用这种方法所计算出的层厚允许误差对于薄膜的实际镀制具有指导意义.     

Hybrid p-type copper sulphide coated zinc oxide nanowire heterojunction device

A novel heterojunction was formed between zinc oxide nanowires and copper sulphide. The proposed device was fabricated by a fully solution-based process that consists of hydrothermal growth method and chemical bath deposition. The optoelectronic properties of the proposed heterojunction were evaluated by scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction, UV–vis spectroscopy, photoluminescence measurements and current voltage characteristics.     

石英晶体振荡法监控膜厚研究

给出了石英晶体振荡法监控膜厚的基本原理,在相同的工艺条件下分别用光电极值法和石英晶体振荡法监控膜厚,对制备的增透膜的反射光谱曲线进行了比较,并对石英晶体振荡法的监控结果做了误差分析.结果表明:石英晶体振荡法不仅膜厚监控精度高,而且能监控沉积速率,获得稳定的膜层折射率,从而有效地控制薄膜的光学性能.     

化学气相沉积-后退火法制备MgB2超导薄膜

本文提出在高真空镀膜系统中通过化学气相沉积(CVD)的方法沉积高纯度的先驱B膜,再经过后退火工艺,Mg扩散进入先驱膜而反应生成了MgB2超导薄膜.经过多种实验方法检测,这种薄膜具有较为优异的超导性能,是一种和传统微电子工艺兼容、适宜于工业化大规模生产MgB2超导薄膜的方法.     

Optical and structural properties of polycrystalline CVD diamond films grown on fused silica optical fibres pre-treated by high-power sonication seeding

In this paper, the growth of polycrystalline chemical vapour deposition (CVD) diamond thin films on fused silica optical fibres has been investigated. The research results show that the effective substrate seeding process can lower defect nucleation, and it simultaneously increases surface encapsulation. However, the growth process on glass requires high seeding density. The effects of suspension type and ultrasonic power were the specific objects of investigation. In order to increase the diamond density, glass substrates were seeded using a high-power sonication process. The highest applied power of sonotrode reached 72 W during the performed experiments. The two, most common diamond seeding suspensions were used, i.e. detonation nanodiamond dispersed in (a) dimethyl sulfoxide and (b) deionised water. The CVD diamond nucleation and growth processes were performed using microwave plasma assisted chemical vapour deposition system. Next, the seeding efficiency was determined and compared using the numerical analysis of scanning electron microscopy images. The molecular composition of nucleated diamond was examined with micro-Raman spectroscopy. The sp³/sp² band ratio was calculated using Raman spectra deconvolution method. Thickness, roughness, and optical properties of the nanodiamond films in UV–vis wavelength range were investigated by means of spectroscopic ellipsometry. It has been demonstrated that the high-power sonication process can improve the seeding efficiency on glass substrates. However, it can also cause significant erosion defects at the fibre surface. We believe that the proposed growth method can be effectively applied to manufacture the novel optical fibre sensors. Due to high chemical and mechanical resistance of CVD diamond films, deposition of such films on the sensors is highly desirable. This method enables omitting the deposition of an additional adhesion interlayer at the glass–nanocrystalline interface, and thus potentially increases transmittance of the optical system.     

Evaluation of the energy loss of intense pulsed ion beam in thinfoil targets

A new and simple method is proposed to evaluate the energy deposition profile of an intense pulsed ion beam in the target by using a magnetic energy spectrometer. Energy deposition profiles of protons in the cold targets are evaluated by this method, and good agreement has been obtained with the theoretical curves     

Deposition of amorphous hydrogenated semiconductors by magnetron assisted silane decomposition

Magnetron assisted silane decomposition (MASD) is proposed as a method for deposition of a-Si:H and its alloys. In this method a silane containing gas mixture is passed through the magnetron plasma near a target and decomposed there. The deposition rate in the case of the c-Si target is increased 3 times compared to magnetron sputtering and film properties are changed. a-SiSn:H is obtained with a Sn target.     

管式等离子体化学气相沉积质量转换动力过程的研究

本文对管式装置中等离子体化学气相沉积过程提出了一种数学描述方式,具体讨论了沉积过程中活性粒子产生频率、沉积速率和沉积效率等与电子密度、气体流速、气体压强等的相互关系,并对部分结果进行了理论解释。 关键词：     

Ion-induced densification of pvd films—a choice of the optimum density of ion bombardment

The densification process by ion-assisted physical vapour deposition of films is considered as a consequence of rearrangement of atoms in the near-surface film layer. A model is proposed allowing the quantitative estimate of the optimum ion current density required to produce a film with maximum density.     

Influence of wire mesh electrodes on the volume and surface characteristics of dielectric barrier discharge of atmospheric pressure helium

The dielectric barrier discharge of helium in a 6 mm gap at atmospheric pressure was studied. In this paper, the influence of electric field distribution on the uniformity of DBD is analyzed theoretically and verified by experiments. The experimental results show that the mesh electrode produces a local enhancement effect by affecting the electric field and then produces corona discharge, which provides seed electrons for the subsequent discharge process. The effects of mesh diameter and size on discharge uniformity and stability are analyzed, the electrode structure parameters are optimized, the method of a segmented electrode is proposed, and the discharge process and charge distribution are studied. The electrical diagnosis results of plasma technology show that the segmented mesh electrode reduces the breakdown voltage of DBD and increases the charge deposition.     

A point source analytical model of inverse pulsed laser deposition

A simple analytical model for inverse pulsed laser deposition is proposed. In the model the motion of the evaporated material is assumed to emerge as from a point source located above the surface of evaporation at some distance. The obtained thickness profiles of inverse deposited films agree well with those calculated by the test particle Monte Carlo method. The proposed approach has been applied for analysis of experimental data on inverse pulsed laser deposition of graphite in nitrogen atmosphere with nanosecond pulses of laser fluences between 1 and 7 J/cm². The model describes well the thickness profiles and pressure dependence of film growth rate for inverse deposition.     

动力学晶格蒙特卡洛方法模拟Cu薄膜生长

利用动力学晶格蒙特卡洛方法模拟了Cu薄膜在Cu(100)面上的三维生长过程。模型中考虑了四个动力学过程:原子沉积、增原子迁移、双原子迁移和台阶边缘原子迁移,各动力学过程发生的概率由多体势函数确定。讨论了基底温度、沉积速率及原子覆盖率对Cu原子迁移、成核和表面岛生长等微观生长机制的影响;获得了Cu薄膜的表面形貌图并计算了表面粗糙度。模拟结果表明,随基底温度升高或沉积速率下降,岛的平均尺寸增大,数目减少,形状更加规则。低温时,Cu薄膜表现为分形的离散生长,高温时,Cu原子迁移能力增强形成密集的岛。Cu薄膜表面粗糙度随着基底温度的升高而迅速减小;当基底温度低于某一临界温度时,表面粗糙度随原子覆盖率或沉积速率的增大而增大;当基底温度超过临界温度时,表面粗糙度随原子覆盖率或沉积速率的变化很小,基本趋于稳定。     

电子束曝光中的蒙特卡罗方法

本文用蒙特卡罗方法模拟了散射电子束在PMMA电子束胶层中的能量沉积分布。为兼顾节约计算机CPU运行机时和物理概念的严谨性而提出了混合式步长的模拟方法。在处理电子穿越胶-衬底的边界时,本文采用宁一种几率确定法,用以判断电子是否在界面处发生一次弹性散射。得出了电子在胶层中的前散射和背散射的能量沉积分布图。     

Atomic force microscopy investigation of growth process of organic TCNQ aggregates on SiO2 and mica substrates

<正>Deposition patterns of tetracyanoquinodimethane(TCNQ) molecules on different surfaces are investigated by atomic force microscopy.A homemade physical vapour deposition system allows the better control of molecule deposition. Taking advantage of this system,we investigate TCNQ thin film growth on both SiO_2 and mica surfaces.It is found that dense island patterns form at a high deposition rate,and a unique seahorse-like pattern forms at a low deposition rate.Growth patterns on different substrates suggest that the fractal pattern formation is dominated by molecule-molecule interaction.Finally,a phenomenal "two-branch" model is proposed to simulate the growth process of the seahorse pattern.     

Nano-scale gap filling and mechanism of deposit-etch-deposit process for phase-change material

Ge2Sb2Te5 gap filling is one of the key processes for phase-change random access memory manufacture.Physical vapor deposition is the mainstream method of Ge2Sb2Te5 film deposition due to its advantages of film quality,purity,and accurate composition control.However,the conventional physical vapor deposition process cannot meet the gapfilling requirement with the critical device dimension scaling down to 90 nm or below.In this study,we find that the deposit-etch-deposit process shows better gap-filling capability and scalability than the single-step deposition process,especially at the nano-scale critical dimension.The gap-filling mechanism of the deposit-etch-deposit process was briefly discussed.We also find that re-deposition of phase-change material from via the sidewall to via the bottom by argon ion bombardment during the etch step was a key ingredient for the final good gap filling.We achieve void-free gap filling of phase-change material on the 45-nm via the two-cycle deposit-etch-deposit process.We gain a rather comprehensive insight into the mechanism of deposit-etch-deposit process and propose a potential gap-filling solution for over 45-nm technology nodes for phase-change random access memory.     

轴流式射频PCVD沉积质量分布的动力学分析

在用静电探针诊断了轴流式射频等离子体激活化学汽相沉积(PCVD)反应器中等离子体电子温度、电子密度轴向分布的基础上,提出与主要工艺参数相联系的二元流体动力学模型。以等离子体参量的轴向分布和变化规律为中介量,从动力学的角度分析主要工艺参数影响PCVD沉积质量分布的规律。将模型用于沉积SnO₂薄膜的过程,理论计算与实验结果符合较好。 关键词：     

Nanoscale gap filling for phase change material by pulsed deposition and inductively coupled plasma etching

The gap filling of phase change material has become a critical module in the fabrication process of phase change random access memory (PCRAM) as the device continues to scale down to 45 nm and below. However, conventional physical vapor deposition process cannot meet the nanoscale gap fill requirement anymore. In this study, we found that the pulsed deposition followed by inductively coupled plasma etching process showed distinctly better gap filling capability and scalability than single-step deposition process. The gap filling mechanism of the deposit–etch–deposit (DED) process was briefly discussed. The film redeposition during etching step was the key ingredient of gap filling improvement. We achieved void free gap filling of phase change material on the 30 nm via with aspect ratio of 1:1 by two-cycle DED process. The results provided a rather comprehensive insight into the mechanism of DED process and proposed a potential gap filling solution for 45 nm and below technology nodes for PCRAM.