FMR studies in compositionally modulated Co-Nb and Co films

Compositionally modulated (CM) films of Co-Nb have been prepared by sequential evaporation onto Si substrates using two E-guns fitted in an UHV system. The thickness of the Co sublayer was varied in the range 50 to 105 Å and that of Nb in the range 18 to 90 Å. A single layer Co film of about 850 Å was also prepared and studied. Magnetization was measured using a VSM at 290 K. FMR was observed at about 9.8 GHz in the range 3 to 290 K. For Co a layer thickness of 50 Å the magnetization in CM film is about 12% lower at 4.2 K, as compared to the bulk value. The FMR spectrum of single layer Co film shows a single absorption in the perpendicular configuration with a narrow line width of 40 Oe. Other properties of this film agree with those published in the literature. In CM films, multiple absorption modes are observed. A small perpendicular anisoropy is also measured. The magnetization in all the samples varies at T^3/2. The Curie temperature of CM films is lower than that of bulk Co. The resonance line width in CM films at lower temperatures, increases much faster than in Co film.     

Co on thin Al2O3 films grown on Ni3Al(1 0 0)

The growth of Co on thin Al₂O₃ layers on Ni₃Al(1 0 0) was investigated by Auger electron spectroscopy, high resolution electron energy loss spectroscopy (EELS), and scanning tunneling microscopy. At 300 K, Co grows in three-dimensional clusters on top of the Al₂O₃ layer. A defect structure of the alumina layer plays a crucial role during the early stage of Co growth. After deposition of 10 Å of Co, a complete screening of the dipoles of the Al₂O₃ layer due to the Co film is found in the EELS measurements. Annealing the Co film reveals a process of coalescence of Co clusters and, above 700 K, diffusion of the Co atoms through the oxide film into the substrate takes place.     

Strain induced epitaxial relationships of Cr on Co/Pd(111)

The growth and structure of Co ultra-thin films on Pd(111) and Cr on Co/Pd(111) have been analyzed by grazing incidence X-ray diffraction and low energy electron diffraction. It is shown that the in-plane lattice constant of the epitaxial Co film depends on the growth temperature. Although the strain decreases as a function of the Co film thickness, it persists for 20 monolayer (ML) films or even thicker. When Cr is deposited at room temperature on a strained Co film (10 to 20 ML thick) a Kurdjumov–Sachs epitaxial relationship is observed, whereas when Cr is deposited on a Co(0001) single-crystal or on a very thick Co film on Pd(111), a Nishyama–Wassermann orientation is obtained.     

Regulating the magnetic anisotropy by Hf thickness and heat treatment in Pt/Co/Hf films

Pt/Co/Hf multilayers were prepared by magnetron sputtering, and the magnetic anisotropy was effectively regulated by Hf thickness and heat treatment in Pt/Co/Hf films. The interface microstructures were characterized. The influence of the interface microstructure on magnetic properties was studied. The results show that the magnetic anisotropy in Pt/Co/Hf films is closely related to the interface microstructure, which is influenced by Hf thickness and the heat treatment temperature. Microstructure analysis shows that after the Pt(3)/Co(1.5)/Hf(1) film is heat-treated, the CoO_x content increases, more CoPt(111) forms, the interface is smoother and sharper, and the roughness of the Co/Hf interface decreases. Several factors work together to cause the magnetic anisotropy of the sample to change from in-plane magnetic anisotropy (IMA)to perpendicular magnetic anisotropy (PMA).     

Oxidation of low-index FeAl surfaces

The oxidation of the (100), (110) and (111) surfaces of the intermetallic compound FeAl has been investigated using LEED and XPS. On all three surfaces, oxidation at room temperature leads to the formation of an amorphous oxide film on top of an Al-depleted interlayer. The film growth can be divided into two regions of differing kinetics, i.e. the initial formation of a closed oxide film and a subsequent thickening. In the first region, the oxygen-uptake rate varies significantly with surface orientation, while in the thickening regime the uptake is the same for all surfaces. The maximum thickness as well as the composition of the oxide films were found to depend on the initial oxidation rate. At higher oxidation temperatures, ordered oxide films of around 5–8 Å in thickness are formed, very similar to those observed on NiAl. Photoemission spectra from these ordered phases showed evidence for Al atoms in two different chemical environments, i.e. the well-known oxide species in the interior of the film and an additional species present at the oxide/alloy interface.     

Pd, Co and Co-Pd clusters on the ordered alumina film on NiAl(1 1 0): Contact angle, surface structure and composition

We have investigated the structure and morphology of Co and Pd clusters grown at room temperature on an alumina film on NiAl(1 1 0) by scanning tunneling microscopy, low energy ion scattering and Auger electron spectroscopy. We have also studied the clusters after annealing to 300 °C and Pd clusters deposited at 300 °C. Mixed Co-Pd clusters obtained by sequential deposition at room temperature were also studied. Pure Co deposited at room temperature forms a single type of clusters, most or all of them with close-packed planes parallel to the oxide surface. Their shape can be approximated by truncated spheres with a high contact angle of 115-125°. These clusters are stable upon annealing up to 300 °C.Pd clusters deposited at room temperature grow in two different modes. At the reflection domain boundaries the clusters grow in their thermodynamically favorable shape. The clusters do not have a single crystallographic orientation and their shape can be approximated by a truncated sphere with a high contact angle of about 110°, especially at very low coverages (below 0.05 ML). At the antiphase domain boundaries, the Pd clusters grow in (1 1 1) orientation and on some of them small (1 1 1) facets appear at their tops already at low coverages. For higher coverages of Pd, the majority of Pd clusters are rather flat with a large Pd(1 1 1) facet on top. The clusters’ shape at the antiphase domain boundaries differs from the thermodynamically favorable one, due to kinetic limitations, especially at higher coverages. Annealing the Pd clusters to 300 °C leads to re-structuring of these Pd clusters. They transform into higher and more rounded clusters and a thin disordered alumina film is formed on top of the clusters. When Pd is deposited at 300 °C, about 16% of the Pd clusters have a steep slope and rounded tops. The rest of the Pd forms lower clusters, goes subsurface and is covered by a disordered alumina film. When Co and Pd are deposited sequentially, Pd covers the Co clusters forming a shell. The resulting mixed clusters are still truncated spheres with a lowered contact angle. For deposition in the reverse order (first Pd and then Co) we found that Co forms an alloy with Pd already at room temperature.     

Growth and morphology of Cobalt thin films on Pd(1 1 1)

We report on the growth of thin Co films on Pd(1 1 1) at three different temperatures 180 K, 300 K, and 550 K. The structure and morphology was determined by scanning tunneling microscopy and low energy electron diffraction. The growth mode was found to vary with temperature. For 180 K and 300 K, we observed a tendency to double layer growth for the initial layers while at elevated temperatures, the initial film grows in single layer. For most conditions, non-ideal three-dimensional growth was observed. Two-dimensional growth was only found for growth temperature of 550 K and coverages above 5 ML. Depending on temperature, the Co islands at low coverages exhibit three principally different shapes: dendritic at 180 K, hexagonal at 300 K and triangular at 550 K. For growth at 550 K and coverages above 5 ML, the islands changed to an irregular shape. This transition is most likely responsible for the transition to 2D growth. Further, the large strain is relaxed by the creation of a dislocation network with mixed fcc and hcp stacking. Depending on the temperature and coverage, a hexagonal or a triangular network was observed. Finally, we have investigated the effect of annealing Co films prepared at 180 K and 300 K. Heating to 490 K leads to coarsening and intermixing.     

Alloy formation of Co/Ni/Pt(1 1 1)

The initial growth and alloy formation of ultrathin Co films deposited on 1 ML Ni/Pt(1 1 1) were investigated by Auger electron spectroscopy (AES), low energy electron diffraction (LEED), and ultraviolet photoelectron spectroscopy (UPS). A sequence of samples of d_Co Co/1 ML Ni/Pt(1 1 1) (d_Co = 1, 2, and 3 ML) were prepared at room temperature, and then heated up to investigate the diffusion process. The Co and Ni atoms intermix at lower annealing temperature, and Co-Ni intermixing layer diffuses into the Pt substrate to form Ni-Co-Pt alloys at higher annealing temperature. The diffusion temperatures are Co coverage dependent. The evolution of UPS with annealing temperatures also shows the formation of surface alloys. Some interesting LEED patterns of 1 ML Co/1 ML Ni/Pt(1 1 1) show the formation of ordered alloys at different annealing temperature ranges. Further studies in the Curie temperature and concentration analysis, show that the ordered alloys corresponding to different LEED patterns are Ni_xCo_1−xPt and Ni_xCo_1−xPt₃. The relationship between the interface structure and magnetic properties was investigated.     

Growth and alloy formation of ultrathin Ni films on Co/Pt(1 1 1)

Low-energy electron diffraction (LEED) and Auger electron spectroscopy (AES) were used to study the growth and the structural evolution of Ni/Co/Pt(1 1 1) following high-temperature annealing. From the oscillation of the specular beam of the LEED and Auger uptake curve, we concluded that the growth mode of thin Ni films on 1 ML Co/Pt(1 1 1) is at least 2 ML layer-by-layer growth before three-dimensional island growth begins. The alloy formation of Ni/1 ML Co/Pt(1 1 1) was analyzed by AES. The temperature for the intermixing of Ni and Co layers in the upper interface without diffusing into the bulk of Pt is independent of the thickness of Ni when a Co buffer is one atomic monolayer. After the temperature was increased, formations of Ni-Co-Pt alloy, Ni-Pt alloy and Co-Pt alloy were observed. The temperature required for the Ni-Co intermixing layer to diffuse into Pt bulk increases with the thickness of Ni. The interlayer distance as a function of annealing temperature for 1 ML Ni/1 ML Co/Pt(1 1 1) was calculated from the I-V LEED. The evolution of LEED patterns was also observed at different annealing temperatures.     

Self-propagating high-temperature synthesis in Pt/Co/MgO(001) epitaxial thin films

The self-propagating high-temperature synthesis in the two-layer and multilayer Pt/Co(001) thin films has been investigated. It is shown that the initiation of the synthesis occurs at temperatures of 770–820 K. After the synthesis in the two-layer film samples, the PtCo(001) disordered phase exhibits an epitaxial growth at the interface between cobalt and platinum layers. In the multilayer Pt/Co(001) thin films, the self-propagating high-temperature synthesis also brings about the formation of the PtCo(001) disordered phase on the MgO(001) surface. Further annealing at a temperature of 870 K for 4 h results in the transition of the PtCo(001) disordered phase to the ordered phase. Rapid thermal annealing of the Pt/Co(001) multilayer films at a temperature of 1000 K leads to the formation of the CoPt₃ phase. The magnetic characteristics change in accord with the structural transformations in Pt/Co film samples.     

Iron oxide thin film growth on Al2O3/NiAl(1 1 0)

The electronic structure and the growth morphology of iron oxide thin films were studied by means of Synchrotron Radiation Photoelectron Spectroscopy (SRPES) and Low Energy Electron Diffraction (LEED). A thin well-ordered alumina film on a NiAl(1 1 0) single crystal surface as a template for iron oxide growth was employed. Two different methods of iron oxide film preparation were applied. In the first attempt, iron deposited at room temperature was subsequently annealed in oxygen. Even though a whole layer of iron was oxidized, an expected long-range order was not achieved. The second attempt was to perform reactive deposition. For this reason iron was evaporated in oxygen ambient at elevated substrate temperature. This method turned out to be more efficient. Diffused but clear LEED patterns of six-fold symmetry indicating hexagonal surface atoms arrangement were observed. From the PES measurements, binding energies for Fe2p for grown iron oxide film were established as well as energy distribution curves for the valence band. Growth curves based on Fe3p core-level peak intensities for iron and iron oxide were plotted identifying type of film growth for both deposition methods. Based upon these results we have found evidence for interdiffusion in the interface between alumina and iron oxide at the early stages of growth. Further deposition led to formation of Fe₃O₄(1 1 1) (magnetite) overlayer. Moreover, the quality of the film could also be improved by long-time annealing at temperatures not exceeding 575 K. Higher annealing temperature caused disappearance of LEED pattern indicating loss of long-range ordering.     

Pseudomorphy, surface alloys and the role of elementary clusters on the domain orientations in the Cu/Al13Co4(100) system

We have used the pseudo-tenfold surface of the orthorhombic Al(13)Co(4) crystal as a template for the adsorption of Cu thin films of various thicknesses deposited at different temperatures. This study has been carried out by means of low energy electron diffraction (LEED), scanning tunnelling microscopy (STM), x-ray photoelectron spectroscopy (XPS) and x-ray photoelectron diffraction (XPD). From 300 to 573 K, Cu adatoms grow pseudomorphically up to one monolayer. At 300 K, the β-Al(Cu, Co) phase appears for coverages greater than one monolayer. For higher temperature deposition, the β-Al(Cu, Co) phase further transforms into the γ-Al(4)Cu(9) phase. Both β and γ phases grow as two (110) domains rotated by 72° ± 1° from each other. Instead of following the substrate symmetry, it is the orientations of the bipentagonal motifs present on the clean Al(13)Co(4)(100) surface that dictate the growth orientation of these domains. The initial bulk composition and structural complexity of the substrate have a minor role in the formation of the γ-Al(4)Cu(9) phase as long as the amount of Al and the Cu film thickness reach a critical stoichiometry.     

Formation of Co ultrathin films on Si(1 1 1): Growth mechanisms, electronic structure and transport

The AES, EELS, AFM and resistance measurement investigations have been performed to determine the growth mechanism, electronic structure and resistance-thickness dependence of Co layers on silicon at the thickness range from submonolayer up to several monolayer coverage. These layers were obtained under UHV high-rate deposition with using re-evaporation of Co from a Ta foil. The layer-by-layer growth of Co on Si(1 1 1) with some light segregation of Si has been found on the AES data. An enlarged and reduced concentration of valence electrons in the interface Si layer at the thickness ranges 0-1 Å and in the Co film at d = 1-2 Å has been observed. Resistance measurement of the Co film showed a fast decrease of the resistance down to some value limited by quantum-size effect in accordance with the formation of a two-dimensional Co phase at d = 1-2 Å.     

Surface oxidation behavior of MgNd alloys

The oxidation kinetics of MgNd alloys oxidized in pure O₂ at high temperatures has been investigated. The results revealed two stages of the reaction: A fast initial oxidation was followed by a slow oxide growth with a parabolic kinetics. For MgNd alloys (Nd = 25 wt.%), the oxidation rate increased with the enhancement of the oxidation temperature. A sudden ignition was found for this alloys oxidized at 873 K up to about 80 min. Moreover, the increase of the Nd content would harm the oxidation resistance of the MgNd alloys. By Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and scanning electron microscopy (SEM) analysis, it was found that a triplex structure of oxide film formed. The outer layer was composed of MgO, Nd₂O₃ and Nd(OH)₃, the middle layer mainly consisted of MgO and Nd₂O₃, and the inner layer was the transitional layer made of MgO, Nd₂O₃ and the content of the substrate. The protective oxidation was associated with the formation of the dense Nd₂O₃/MgO layer during isothermal oxidation process. The oxidation mechanisms for the formation of oxide film are discussed.     

Epitaxial growth of cobalt clusters on the bare and the oxide film grown on NiAl(1 0 0) surfaces

The structure of the nano-sized cobalt clusters on bare NiAl(1 0 0) and an oxidized NiAl(1 0 0) surfaces have been investigated by AES, LEED and RHEED. The deposition of Co onto bare NiAl(1 0 0) at room temperature led to small crystalline Co grains and surface asperities of substrate. The latter is likely induced by replacement of surface Al, Ni atoms by Co deposit. At 800 K Co particles aggregate to form clusters, but incorporation of Co into bulk NiAl(1 0 0) could occur upon annealing at 900 K. On the other hand, pure face-centered cubic (fcc) phase of Co crystallites of ≈1 nm in diameter with inclusion of smaller-sized particles (D < 1 nm) are observed on Θ-Al₂O₃ after Co deposition at room temperature. After annealing the Co nano-clusters grow larger at expense of small particles (D ≈ 3 nm), where the [1 1 0] and [−1 1 0] axis of the Co(0 0 1) facets are parallel to the [1 0 0] and [0 1 0] directions of (0 0 1)oxide, respectively. The in-plane lattice constant of Co clusters is ca. 4% larger than that of bulk Co, yielding less strain at the Co/oxide interface. A 15° ± 10% random orientation of the normal to (0 0 1) facet of Co clusters with respect to (0 0 1)oxide surface was deduced from the “arc”-shape reflection spots in RHEED. These results suggest that both orientation and phase of Co clusters are strongly affected by the nature and structure of oxide surface.     

Low-temperature activation of Mg-doped GaN with thin Co and Pt films

The activation of metallorganic chemical vapor deposition-grown Mg-doped GaN by N₂ annealing with thin Co and Pt films has been investigated. The Hall effect measurements revealed that both the Co and Pt films enhance activation of Mg acceptors as catalysts at low temperatures. A maximum hole concentration of p-type GaN was achieved at annealing temperature of 600 °C for the samples activated with both the Co and Pt films. It was also revealed that the activation of the acceptors is strongly affected by the thickness of the Co film.     

Dielectric relaxations in ultrathin isotactic PMMA films and PS-PMMA-PS trilayer films

The local and cooperative dynamics of supported ultrathin films ( L = 6.4 - 120 nm) of isotactic poly(methyl methacrylate) (i-PMMA, Mn = 118 x 10(3) g/mol) was studied using dielectric relaxation spectroscopy for a wide range of frequencies (0.1 Hz to 10(6) Hz) and temperatures (250 - 423 K). To assess the influence of the PMMA film surfaces on the glass transition dynamics, two different sample geometries were employed: a single layer PMMA film with the film surfaces in direct contact with aluminum films which act as attractive, hard boundaries; and a stacked polystyrene-PMMA-polystyrene trilayer film which contains diffuse PMMA-PS interfaces. For single layer films of i-PMMA, a decrease of the glass transition temperature T(g) by up to 10 K was observed for a film thickness L < 25 nm (comparable to R(EE)), indicated by a decrease of the peak temperature T(alpha) in the loss epsilon(")(T) at low and high frequencies and by a decrease in the temperature corresponding to the maximum in the apparent activation energy E(a)(T) of the alpha-process. In contrast, measurements of i-PMMA sandwiched between PS-layers revealed a slight (up to 5 K) increase in T(g) for PMMA film thickness values less than 30 nm. The slowing down of the glass transition dynamics for the thinnest PMMA films is consistent with an increased contribution from the less mobile PMMA-PS interdiffusion regions.     

Oxygen adsorption on ultrathin Co/Ir(1 1 1) films: Compositional anomaly

Adsorption of oxygen on ultrathin Co/Ir(1 1 1) films thinner than 4 monolayers in an ultrahigh vacuum environment was studied. For oxygen adsorption on cobalt films, the complex adsorption kinetics emerges partly due to the incorporation of oxygen. The amount of oxygen adsorbed at the surfaces is higher than that incorporated into the film as revealed from sputter profiling measurements. At room temperature the CoO layer exhibits paramagnetism and could not contribute to the remanent Kerr intensity. As oxygen exposure increases, the reduction of the Kerr intensity is due to the reduction of the effective layer for the magnetic measurements. Compared with oxygen saturated cobalt films, the concentration of adsorbed oxygen per Co atom shows an oscillatory behavior. A compositional anomaly of a great amount of adsorbed oxygen in submonolayer Co coverage occurs because of the maximized number of adsorption and incorporation sites for oxygen on the surface. A larger charge transfer between Co and oxygen was observed for thinner Co overlayers as revealed from the larger chemical shifts of Auger lines.     

Morphology and composition of nanoscale surface oxides on Fe–20Cr–18Ni{1 1 1} austenitic stainless steel

Surface oxidation ranging from initial stages to the onset of passive oxide layer formation have been investigated on Fe–20Cr–18Ni{1 1 1} single crystal surface by X-ray photoelectron spectroscopy (XPS). Surface segregation of the alloying elements and the morphology of the surface oxide nanostructure were characterized quantitatively by inelastic electron background analysis. Our results demonstrate that by increasing the oxidation temperature the relative concentrations of Fe²⁺ and Fe³⁺ cations increase due to their enhanced mobility. Higher temperature also improves the mobility of chromium, thus enhancing its segregation to the oxygen-rich surface and thereby reinforcing the passive layer on the alloy. This is in agreement with the results showing the sudden decrease in oxide film thickness at the oxidation temperatures exceeding 600 K. Additionally, a pronounced segregation of metallic nickel is found in the interface between the surface oxide layer and the bulk alloy.     

Oxidation temperature dependent properties of MgO thin film on alumina

The magnesium oxide thin films were prepared by thermal oxidation (in air) of vacuum evaporated magnesium thin film on alumina. It was found that oxidation temperature (623 K, 675 K and 723 K) and thickness (103 nm and 546 nm) dependent effects were prominently manifested in the surface morphology. Electrical and microwave properties (8-12 GHz) of the MgO thin films were also carried out. X-ray diffraction showed orientation along (2 0 0) and (2 2 0) directions. Flowerlike morphology was observed from SEM and flake like morphology for films of higher thickness oxidized at higher temperatures. The magnesium oxide thin film showed NTC behavior. Microwave transmittance was found to increase with increase in oxidation temperature but was lower than alumina. Frequency and oxidation temperature dependent microwave permittivity was obtained. The microwave dielectric constant varied in the range 8.3-15.3.