Room-temperature polariton lasing in semiconductor microcavities

We observe a room-temperature low-threshold transition to a coherent polariton state in bulk GaN microcavities in the strong-coupling regime. Nonresonant pulsed optical pumping produces rapid thermalization and yields a clear emission threshold of 1 mW, corresponding to an absorbed energy density of 29 microJ cm-2, 1 order of magnitude smaller than the best optically pumped (In,Ga)N quantum-well surface-emitting lasers (VCSELs). Angular and spectrally resolved luminescence show that the polariton emission is beamed in the normal direction with an angular width of +/-5 degrees and spatial size around 5 microm.     

Parametric polariton amplification in semiconductor microcavities

We present novel experimental results demonstrating the coherence properties of the nonlinear emission from semiconductor microcavities in the strong coupling regime, recently interpreted by parametric polariton four-wave mixing. We use a geometry corresponding to degenerate four-wave mixing. In addition to the predicted threshold dependence of the emission on the pump power and spectral blueshift, we observe a phase dependence of the amplification which is a signature of a coherent polariton wave mixing process.     

Motion of spin polariton bullets in semiconductor microcavities

The dynamics of optical switching in semiconductor microcavities in the strong coupling regime is studied by using time- and spatially resolved spectroscopy. The switching is triggered by polarized short pulses which create spin bullets of high polariton density. The spin packets travel with speeds of the order of 10(6) m/s due to the ballistic propagation and drift of exciton polaritons from high to low density areas. The speed is controlled by the angle of incidence of the excitation beams, which changes the polariton group velocity.     

Role of fluctuations in nonlinear dynamics of a driven polariton system in semiconductor microcavities

The escape time from the lower energy state of the bistable nonlinear driven microcavity oscillator has been obtained analytically by means of the quasi-classical kinetic equation in the basis of quasi-energy states. The dependence of the escape time on the intensity of the external field is in rather good agreement with the results of numerical experiments. Moreover, the numerical dependencies of the escape time on the damping parameter reveal a smooth crossover from exponential to diffusive-like behavior. The text was submitted by the authors in English.     

Optical circuits based on polariton neurons in semiconductor microcavities

By exploiting the polarization multistability of polaritons, we show that polarized signals can be conducted in the plane of a semiconductor microcavity along controlled channels or "neurons." Furthermore, because of the interaction of polaritons with opposite spins it is possible to realize binary logic gates operating on the polarization degree of freedom. Multiple gates can be integrated together to form an optical circuit contained in a single semiconductor microcavity.     

Coherent control of polariton parametric scattering in semiconductor microcavities

In a pump-probe experiment, we have been able to control, with phase-locked probe pulses, the ultrafast nonlinear optical emission of a semiconductor microcavity, arising from polariton parametric amplification. This evidences the coherence of the polariton population near k=0, even for delays much longer than the pulse width. The control of a large population at k=0 is possible although the probe pulses are much weaker than the large polarization they control. With rising pump power the dynamics of the scattering get faster. Just above threshold the parametric scattering process shows unexpected long coherence times, whereas when pump power is risen the contrast decays due to a significant pump reservoir depletion. The weak pulses at normal incidence control the whole angular emission pattern of the microcavity.     

Temperature dependent polariton emission from strongly coupled organic semiconductor microcavities

We investigated the absorption and photoluminescence (PL) of J-aggregates of a cyanine dye both in a thin film format and when used as the active layer in a strongly-coupled microcavity. We show that as temperature is reduced, the absorption linewidth of the J-aggregates narrows and shifts to higher energy. When the J-aggregate is placed in a microcavity we find that the energy of the polariton modes also shifts to higher energies as temperature is reduced. We compare the intensity of PL emission from the upper and lower branches at resonance as a function of temperature, and find that it can be described by an activation energy of 25 meV. PL emission spectra at resonance also suggest that uncoupled excitons inside the microcavity populate the upper polariton branch states.     

Many-body and correlation effects on parametric polariton amplification in semiconductor microcavities

The complexity induced by the Coulomb interaction between electrons determines the noninstantaneous character of exciton-exciton collisions. We show that the exciton-photon coupling in semiconductor microcavities is able to alter the exciton dynamics during collisions strongly affecting the effective scattering rates. Our analysis clarifies the origin of the great enhancement of parametric gain observed when increasing the polariton splitting. It also demonstrates that exciton-exciton collisions in semiconductors can be controlled and engineered to produce almost decoherence-free collisions for the realization of all-optical microscopic devices.     

Continuous wave observation of massive polariton redistribution by stimulated scattering in semiconductor microcavities

A massive redistribution of the polariton occupancy to two specific wave vectors, zero and approximately 3.9x10(4) cm(-1), is observed under conditions of continuous wave excitation of a semiconductor microcavity. The "condensation" of the polaritons to the two specific states arises from stimulated scattering at final state occupancies of order unity. The stimulation phenomena, arising due to the bosonic character of the polariton quasiparticles, occur for conditions of resonant excitation of the lower polariton branch. High energy nonresonant excitation, as in most previous work, instead leads to conventional lasing in the vertical cavity structure.     

Polarization control of the nonlinear emission of semiconductor microcavities

The degree of circular polarization ( Weierstrass p ) of the nonlinear emission in semiconductor microcavities is controlled by changing the exciton-cavity detuning. The polariton relaxation towards K approximately 0 cavitylike states is governed by final-state stimulated scattering. The helicity of the emission is selected due to the lifting of the degeneracy of the +/-1 spin levels at K approximately 0. At short times after a pulsed excitation Weierstrass p reaches very large values, either positive or negative, as a result of stimulated scattering to the spin level of lowest energy (+1/-1 spin for positive/negative detuning).     

Broadening of upper polariton branch in GaAs, GaN, and ZnO semiconductor microcavities

The well-distinguished lower polariton branches (LPBs) and upper polariton branches (UPBs) are characteristics of strong coupling in semiconductor microcavities (MCs). In practice, however, the UPBs are often broadening especially in wide-bandgap material MCs. We present in detail the possible physical mechanisms for the broadening of UPBs for different designs of MCs by numerical simulations based on GaAs, GaN and ZnO materials. The calculated results show that the UPBs of the GaN- and ZnO-based MCs will become indistinct when the thickness of optical cavity is larger than λ and 0.25λ, respectively, mainly attributed to the larger product of the absorption coefficient and the active layer thickness. In wide-bandgap materials, it would be relatively easier to observe the UPB in the case of negative exciton-cavity mode detuning due to the exciton-like UPB and lower absorption of scattering states. In addition, the inhomogeneous broadening would be an important factor causing the invisible UPB in wide-bandgap semiconductor MCs. We demonstrate that in multiple quantum well embedded ZnO-based MCs, the UPB could be well defined due to the large 2D exciton binding energy and the small product of absorption coefficient and active layer thickness. These results show that the UPBs can be properly defined in wide-bandgap semiconductor MCs by appropriate design of the MC structures.     

Controlling polariton coupling in intersubband microcavities

We report the external control of the intersubband polariton coupling by manipulating the carrier density in quantum wells resonantly coupled to a GaAs/AlGaAs microcavity. The electrons in the wells were tuned by means of a depletion gate bias or by utilizing charge transfer between the energetically aligned ground subbands of asymmetric tunnel-coupled quantum wells. We propose the use of tunnel-assisted control of the polariton ground state in an asymmetrically coupled quantum well for implementing ultrafast modulation of intersubband polaritons.     

Excitons in microcavities: Cavity polariton photoluminescence

Il Nuovo Cimento D - We present an extensive set of absorption and PL measurements on semiconductor microcavities in the strong-coupling regime. We observe strong coupling from 110 K to room...     

One-dimensional polariton solitons and soliton waveguiding in microcavities

We extend our recent results [O.A. Egorov et al. Phys. Rev. Lett. 102, 153904 (2009)] on half-light–half-matter polariton solitons in planar semiconductor microcavities operating in the strong coupling regime. We initiate discussion on the structure of the solitons in the momentum space and its link to the instability of the upper branch of the polariton bistability loop. Numerical results showing the soliton excitation by a seed pulse are presented.     

Fast polariton relaxation in strongly coupled organic microcavities

We consider the regime of strong light-matter coupling in an organic microcavity, where large Rabi splitting can be achieved. As has been shown, the excitation spectrum of such a structure, besides coherent polaritonic states, contains a number of strongly spatially localized incoherent excited states. These states form the majority of the excited states of the microcavity and are supposed to play the decisive role in the relaxation dynamics of the excitations in the microcavity. We consider the non-radiative transition from an incoherent excited state into one of the coherent states of the lower polaritonic branch accompanied by emission of a high-energy intramolecular phonon. It is shown that this process may determine the lifetime of incoherent excited states in the microcavity. This observation may be important in the discussion of pump–probe experiments with short pulses. This process may also play an important role for the population of the lowest energy states in organic microcavities, and hence in the problem of condensation of cavity polaritons.     

Motional narrowing in semiconductor microcavities

We describe experiments on a semiconductor microcavity which provide the first demonstration of motional narrowing in semiconductor inter-subband optical transitions. Significant narrowing occurs because of the small mass of the polaritons in a microcavity. The demonstration is made possible by the control provided in a microcavity of the mixing between photon and exciton states, and hence the dispersion of the polariton.     

Giant intersubband polariton splitting in InAs/AlSb microcavities

The optical response of the intersubband excitation of multiple InAs/AlSb quantum wells embedded in a planar semiconductor microcavity has been studied through angle-dependent reflectance measurements. Using a resonator based on total internal reflection, a strong coupling is demonstrated between the intersubband optical transition and the cavity photon, with the attendant formation of intersubband polaritons. A giant vacuum-Rabi splitting 2Ω_R was observed both at liquid helium temperatures () as well as at 300 K (), for a transition energy . The observed ratio is a record high value (14%) for any strongly-coupled systems, and demonstrates the huge potential of this material for the achievement of the ultra-strong coupling regime predicted theoretically.