A density-functional-theory study of atomic nitrogen abstraction from Si(100)-(2 x 1) by a gaseous O(3P) atom

We have employed density-functional theory (DFT) to investigate the abstraction of a nitrogen atom from the Si(100)-(2 x 1) surface by a gas-phase O(3P) atom for different initial bonding configurations of nitrogen at the surface. For the N-Si(100) structures investigated, nitrogen abstraction by an O(3P) atom is predicted to be exothermic by at least 1.9 eV. Abstraction in a single elementary step is found only for the interaction of an O(3P) atom with nitrogen bound in a coordinatively saturated configuration, and an energy barrier of 0.20 eV is computed for this reaction. For nitrogen bound in coordinatively unsaturated configurations, abstraction is predicted to occur by precursor-mediated pathways in which the initial O-surface collision results in the formation of a N-O bond and the concomitant release of between 2.7 and 4.8 eV of energy into the surface, depending on the initial N-Si(100) structure. This initial step produces different surface structures containing an adsorbed NO species, which can then undergo a series of elementary steps leading to NO desorption. Since the barriers for these steps are found to be less than 1 eV in all cases, a significant excess of energy is available from initial N-O bond formation that could activate NO desorption within no more than a few vibrational periods after the initial gas-surface collision. Nitrogen abstraction by such a pathway is essentially an Eley-Rideal process since NO desorption occurs rapidly after the initial gas-surface collision, without the reactants thermally accommodating with the surface. These computational results indicate that nitrogen abstraction by gaseous O(3P) atoms should be facile, even at low surface temperatures, if nitrogen is bound to the Si(100) surface in coordinatively unsaturated configurations.     

Surface S(N)2 reaction by H2O on chlorinated Si(100)-2 x 1 surface

The potential energy surfaces of one, two, and three water molecule sequential adsorptions on the symmetrically chlorinated Si(100)-2 x 1 surface were theoretically explored with SIMOMM:MP2/6-31G(d). The first water molecule adsorption to the surface dimer requires a higher reaction barrier than the subsequent second water molecule adsorption. The lone pair electrons of the incoming water molecule nucleophilically attack the surface Si atom to which the leaving Cl group is bonded, yielding an S(N)2 type transition state. At the same time, the Cl abstracts the H atom of the incoming water molecule, forming a unique four-membered ring conformation. The second water molecule adsorption to the same surface dimer requires a much lower reaction barrier, which is attributed to the surface cooperative effect by the surface hydroxyl group that can form a hydrogen bond with the incoming second water molecule. The third water molecule adsorption exhibits a higher reaction barrier than the first and the second water molecule adsorption channels but yields a thermodynamically more stable product. In general, it is expected that the surface Si-Cl bonds can be subjected to the substitution reactions by water molecules, yielding surface Si-OH bonds, which can be a good initial template for subsequent surface chemical modifications. However, oversaturations can be a competing side reaction under severe conditions, suggesting that the precise control of surface kinetic environments is necessary to tailor the final surface characteristics.     

Evidence for hydrogen desorption through both interdimer and intradimer paths from Si(100)-(2 x 1)

Despite intensive work there are still controversial issues about desorption and adsorption of hydrogen on Si(100)-(2 x 1). In particular, the relative importance of the various interdimer- and intradimer-desorption paths is not clear. Nanosecond-pulse-laser desorption data have been used to argue that the 4H interdimer path is important, while data from thermal-desorption time-of-flight measurements suggest a large translationally hot contribution which cannot arise from the 4H interdimer path. The observation of a translationally hot desorption fraction at low to medium coverage can be accounted for by including the 2H interdimer path in quantum dynamical calculations. In this paper we investigate this issue further and present evidence that supports the inclusion of the intradimer path. Specifically, our results show that the intradimer and 3H interdimer paths provide the major contributions to the translationally hot fraction in the desorbate. Our conclusions are based on density-functional calculations of hydrogen translational excitation, mean-field analysis of thermal-desorption experiments over a range of ramp rate, and Monte Carlo simulations of nanosecond-pulse-laser experiments.     

Competition and selectivity of organic reactions on semiconductor surfaces: reaction of unsaturated ketones on Si(100)-2 x 1 and Ge(100)-2 x 1

A combined experimental and theoretical study of a model system of multifunctional unsaturated ketones, including ethyl vinyl ketone (EVK), 2-cyclohexen-1-one, and 5-hexen-2-one, on the Si(100)-2 x 1 and Ge(100)-2 x 1 surfaces was performed in order to probe the factors controlling the competition and selectivity of organic reactions on clean semiconductor surfaces. Multiple internal reflection infrared spectroscopy data and density functional theory calculations indicate that EVK and 2-cyclohexen-1-one undergo selective [4 + 2] hetero-Diels-Alder and [4 + 2] trans cycloaddition reactions on the Ge(100)-2 x 1 surface at room temperature. In contrast, on the Si(100)-2 x 1 surface, evidence is seen for significant ene and possibly [2 + 2] C=O cycloaddition side products. The greater selectivity of these compounds on Ge(100) versus Si(100) is explained by differences between the two surfaces in both thermodynamic factors and kinetic factors. With 5-hexen-2-one, for which [4 + 2] cycloaddition is not possible, a small [2 + 2] C=C cycloaddition product is observed on Ge(100) and possibly Si(100), even though the [2 + 2] C=C transition state is calculated to be the highest barrier reaction by several kilocalories per mole. The results suggest that, due to the high reactivity of clean semiconductor surfaces, thermodynamic selectivity and control will play important roles in their selective functionalization, favoring the use of Ge for selective attachment of multifunctional organics.     

Competition and selectivity in the reaction of nitriles on ge(100)-2x1

We have experimentally investigated bonding of the nitrile functional group (R-Ctbd1;N:) on the Ge(100)-2x1 surface with multiple internal reflection infrared spectroscopy. Density functional theory calculations are used to help explain trends in the data. Several probe molecules, including acetonitrile, 2-propenenitrile, 3-butenenitrile, and 4-pentenenitrile, were studied to elucidate the factors controlling selectivity and competition on this surface. It is found that acetonitrile does not react on the Ge(100)-2x1 surface at room temperature, a result that can be understood with thermodynamic and kinetic arguments. A [4+2] cycloaddition product through the conjugated pi system and a [2+2] C=C cycloaddition product through the alkene are found to be the dominant surface adducts for the multifunctional molecule 2-propenenitrile. These two surface products are evidenced, respectively, by an extremely intense nu(C=C=N), or ketenimine stretch, at 1954 cm(-)(1) and the nu(Ctbd1;N) stretch near 2210 cm(-)(1). While the non-conjugated molecules 3-butenenitrile and 4-pentenenitrile are not expected to form a [4+2] cycloaddition product, both show vibrational modes near 1954 cm(-)(1). Additional investigation suggests that 3-butenenitrile can isomerize to 2-butenenitrile, a conjugated nitrile, before introduction into the vacuum chamber, explaining the presence of the vibrational modes near 1954 cm(-)(1). Pathways directly involving only the nitrile functional group are thermodynamically unfavorable at room temperature on Ge(100)-2x1, demonstrating that this functional group may prove useful as a vacuum-compatible protecting group.     

Initial oxidation and hydroxylation of the Ge(100)-2 x 1 surface by water and hydrogen peroxide

We use density functional theory to investigate the surface chemistry of initial oxidation and hydroxylation of the Ge(100)-2 x 1 surface by water and hydrogen peroxide. Comparison of the reaction of water on the Si(100)-2 x 1 and Ge(100)-2 x 1 surfaces shows that the kinetics of oxidation of the Ge(100)-2 x 1 surface with water is slower. Our calculations also show that oxidation products on the Ge(100)-2 x 1 surface are less thermodynamically stable than on Si. We also investigate two competing dissociation reactions of H2O2 on the Ge(100)-2 x 1 surface. We find that dissociative adsorption via cleavage of the OH bond is less exothermic than OO dissociation. Furthermore, interdimer OO dissociation has a lower activation barrier than interdimer or intradimer OH dissociation, although interdimer dissociation products are found to be less stable compared than those formed from intradimer dissociation reactions. Finally, we find that the oxidation products formed from hydrogen peroxide are more stable than those formed from water.     

Formation of surface-bound acyl groups by reaction of acyl halides on ge(100)-2x1

We have investigated the reaction of a series of acyl halides, including acetyl chloride, acetyl bromide, acetyl-d3 chloride, benzoyl chloride, and pivaloyl chloride, on Ge(100)-2x1 with multiple internal reflection infrared (MIR-IR) spectroscopy, X-ray photoelectron spectroscopy (XPS), and density functional theory (DFT). Infrared spectra following saturation exposures of acetyl chloride and acetyl bromide to Ge(100)-2x1 at 310 K are nearly identical, both exhibiting strong nu(C=O) stretching peaks near 1685 cm-1 and no vibrational modes in the nu(Ge-H) region. These data provide strong evidence for the presence of a surface-bound acetyl group on Ge(100)-2x1, which results from a C-X dissociation reaction (where X=Cl, Br). For acetyl chloride, DFT calculations predict that the barrier to C-Cl dissociation is only 1 kcal/mol above a chlorine-bound precursor state and is considerably smaller than barriers leading to the [2+2] C=O cycloaddition and alpha-CH dissociation products. In addition to the C-X dissociation product, both infrared and photoelectron results point to the presence of a second structure for acetyl halides where the oxygen of the surface-bound acetyl group donates charge to a nearby surface atom. This interaction is not observed for benzoyl chloride and pivaloyl chloride.     

Theoretical and spectroscopic study of the reaction of diethylhydroxylamine on silicon(100)-2 x 1

Incorporating diversity into structures constructed from the organic modification of silicon surfaces requires the use of molecules that contain multiple substituents of different types. In this work we examine the possible dissociation pathways of diethylhydroxylamine (DEHA, (C(2)H(5))(2)NOH) on the surface of clean silicon(100)-2x1 using cluster and planewave computational methods and high resolution electron energy loss spectroscopy. Our computational results show that DEHA initially forms a strongly-bound complex with the surface via a dative N-Si bond. A low-barrier O-H bond scission then occurs yielding a surface silicon dimer capped by the (C(2)H(5))(2)NO and H fragments. Calculated and measured vibrational spectra support the computed reaction mechanism.     

Initial nitridation of the Ge(100)-2 x 1 surface by ammonia

The reaction of ammonia (NH(3)) on the Ge(100)-2 x 1 surface is investigated using density functional theory (DFT). We find that NH(3) adsorbs molecularly onto Ge(100)-2 x 1 via the formation of a dative bond. The calculations also show that, unlike Si(100)-2 x 1, the activation barrier for subsequent dissociation of NH(3) adsorbed on Ge(100)-2 x 1 is higher than that of reversible desorption, which indicates that NH(3) has a low reactive sticking probability on the Ge(100)-2 x 1 surface. We also predict that nitrogen insertion into the Ge-Ge dimer requires NH(3) overexposure because the activation barrier for NH(2) insertion into the Ge-Ge dimer is significantly above the entrance channel. The nitridation reaction pathway results in the N-H bridge-bonded state, which is found to be 17.4 kcal/mol more stable than the reactants. We find that the reactions of NH(3) on the Ge(100)-2 x 1 surface generally involve higher activation barriers and less stable intermediates than the analogous reactions on the Si(100)-2 x 1 surface.     

Hydrogen desorption kinetics from the Si(1-x)Gex(100)-(2x1) surface

We study the influence of germanium atoms upon molecular hydrogen desorption energetics using density functional cluster calculations. A three-dimer cluster is used to model the Si((1-x))Ge(x)(100)-(2x1) surface. The relative stabilities of the various monohydride and clean surface configurations are computed. We also compute the energy barriers for desorption from silicon, germanium, and mixed dimers with various neighboring configurations of silicon and germanium atoms. Our results indicate that there are two desorption channels from mixed dimers, one with an energy barrier close to that for desorption from germanium dimers and one with an energy barrier close to that for desorption from silicon dimers. Coupled with the preferential formation of mixed dimers over silicon or germanium dimers on the surface, our results suggest that the low barrier mixed dimer channel plays an important role in hydrogen desorption from silicon-germanium surfaces. A simple kinetics model is used to show that reasonable thermal desorption spectra result from incorporating this channel into the mechanism for hydrogen desorption. Our results help to resolve the discrepancy between the surface germanium coverage found from thermal desorption spectra analysis, and the results of composition measurements using photoemission experiments. We also find from our cluster calculations that germanium dimers exert little influence upon the hydrogen desorption barriers of neighboring silicon or germanium dimers. However, a relatively larger effect upon the desorption barrier is observed in our calculations when germanium atoms are present in the second layer.     

Mechanistic aspects of the abstraction of an allylic hydrogen in the chlorine atom reaction with 2-methyl-1,3-butadiene (isoprene)

The different channels for the abstraction of an allylic hydrogen in the chlorine atom reaction with isoprene were explored using ab initio methodology. It is shown that the metathesis reaction proceeds through an association-elimination mechanism in which a weakly bound intermediate (HCl.C(5)H(7)(*)) is formed first (formal addition). Further evolution by HCl elimination leads to the final C(5)H(7)(*) radical. QCISD(T)/aug-cc-pVDZ//MP2/6-31G(d,p) calculations show that for two of the possible pathways the barrier heights involved are moderate and the formation of the intermediates are exergonic (DeltaG < 0). Therefore, the mechanism proposed is both kinetically and thermodynamically feasible. The pressure dependence experimentally observed for the Cl + isoprene reaction can be rationalized in terms of the association-elimination mechanism proposed.     

Cycloaddition reactions of acrylonitrile on the Si(100)-2 x 1 surface

Multi-reference as well as single-reference quantum mechanical methods were adopted to study the potential energy surface along three possible surface reaction mechanisms of acrylonitrile on the Si(100)-2 x 1 surface. All three reactions occur via stepwise radical mechanisms. According to the computed potential energy surfaces, both [4+2] and [2+2](CN) cycloaddition products resulting from the reactions of surface dimers with the C[triple bond]N of acrylonitrile are expected, due to the negligible activation barriers at the surface. Another possible surface product, [2+2](CC), requires a 16.7 kcal/mol activation energy barrier. The large barrier makes this route much less favorable kinetically, even though this route produces the thermodynamically most stable products. Isomerization reactions among the surface products are very unlikely due to the predicted large activation barriers preventing thermal redistributions of the surface products. As a result, the distribution of the final surface products is kinetically controlled leading to a reinterpretation of recent experiments. An intermediate Lewis acid-base type complex appears in both the [4+2] and [2+2](CN) cycloadditions entrance channels, indicating that the surface may act as an electrophile/Lewis acid toward a strong Lewis base substrate.     

Complex thermal chemistry of vinyltrimethylsilane on Si(100)-2x1

The surface chemistry of vinyltrimethylsilane (VTMS) on Si(100)-2x1 has been investigated using multiple internal reflection-Fourier transform infrared spectroscopy, Auger electron spectroscopy, and thermal desorption mass spectrometry. Molecular adsorption of VTMS at submonolayer coverages is dominating at cryogenic temperatures (100 K). Upon adsorption at room temperature, chemical reaction involving rehybridization of the double bond in VTMS occurs. Further annealing induces several reactions: molecular desorption from a monolayer by 400 K, formation and desorption of propylene by 500 K, decomposition leading to the release of silicon-containing products around 800 K, and, finally, surface decomposition leading to the production of silicon carbide and the release of hydrogen as H(2) at 800 K. This chemistry is markedly different from the previously reported behavior of VTMS on Si(111)-7x7 surfaces resulting in 100% conversion to silicon carbide. Thus, some information about the surface intermediates of the VTMS reaction with silicon surfaces can be deduced.     

Surface reaction mechanisms of hydrazine on Si(100)-2 x 1 surface: NH3 desorption pathways

Multireference as well as single-reference wave functions were adopted to study the surface reaction mechanisms of hydrazine. The initial surface mechanisms resemble those of ammonia and its methyl derivatives. MRMP2 values indicate that the lifetime of initial molecularly adsorbed species should be longer than previously suggested. High energy path as well as low energy path of subsequent surface reactions were found. The theoretical initial surface product of low energy path is consistent with the experimentally suggested structure. Both paths eventually lead to very stable surface products, which are also consistent with the experimentally suggested structures. The reaction channels of the experimentally observed NH3 desorptions were also revealed. It was shown that the high reactivity of hydrazine as compared to ammonia and its methyl derivatives is due to the high nucleophilic ability of the additional nitrogen atom of hydrazine.     

Quantum mechanical reaction dynamics in collisions of chlorine atom with hydrogen molecule

We report the accurate determinations of quantum mechanical state-to-state probabilities tor reactions Cl H2 - HCl H and H' HCl - H'Cl H by the generalized Newton variational principle, on the most accurate available potential energy surface. We compare the results for three versions of realistic potential energy surfaces, and to those from hyperspherical close-coupling calculations.     

Cycloaddition reactions of cyanogen (C2N2) on the Si(100)-2x1 surface

Multireference as well as density functional theories in combination with the surface integrated molecular orbital molecular mechanics were adopted to study the surface reactions of cyanogens on Si(100)-2x1 surface. Three different products were identified as minima in the initial surface reaction. Among these, the [2+2] product is both kinetically easily accessible and thermodynamically the most stable. Therefore, it can be considered as the experimentally found strongly bound surface species. Unlike other conjugated systems, the [4+2] product is less stable than the [2+2] product. Subsequent surface isomerization studies revealed that kinetically favorable channels exist between the initially formed low-temperature species and the high-temperature species, indicating that surface morphology changes gradually as a function of surface temperature. Theses two channels eventually lead to the same final surface products, which is consistent with experiment. Current study shows that the subsequent surface isomerizations are the key reactions to better understand the complex surface structures and their properties.     

Difficulty for oxygen to incorporate into the silicon network during initial O2 oxidation of Si(100)-(2x1)

First principles calculations and scanning tunneling microscopy studies of the oxidation of Si(100)-(2x1) surfaces by molecular oxygen reveal that the surface silanone (O)(Si=O) species is remarkably stable, constituting the key intermediate for initial oxidation. The propensity for oxygen to remain within the top surface layer as opposed to incorporating within Si-Si backbonds is surprisingly high. This resistance to incorporation into a cubic lattice even at higher coverages could be a factor to facilitate surface amorphization in subsequent steps.     

Modulated hydrogen beam study of adsorption-induced desorption of deuterium from Si(100)-3x1:D surfaces

We have studied the kinetic mechanism of the adsorption-induced-desorption (AID) reaction, H+D/Si(100) --> D2. Using a modulated atomic hydrogen beam, two different types of AID reaction are revealed: one is the fast AID reaction occurring only at the beam on-cycles and the other the slow AID reaction occurring even at the beam off-cycles. Both the fast and slow AID reactions show the different dependence on surface temperature Ts, suggesting that their kinetic mechanisms are different. The fast AID reaction overwhelms the slow one in the desorption yield for 300 K < or = Ts < or = 650 K. It proceeds along a first-order kinetics with respect to the incident H flux. Based on the experimental results, both two AID reactions are suggested to occur only on the 3x1 dihydride phase accumulated during surface exposure to H atoms. Possible mechanisms for the AID reactions are discussed.     

Ethylenediamine on Ge(100)-2 x 1: the role of interdimer interactions

We have investigated the reaction of the bifunctional molecule ethylenediamine on Ge(100)-2 x 1 using multiple internal reflection Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, and density functional theory calculations. Ethylenediamine exhibits different adsorption behavior than simple methylamines on the Ge(100)-2 x 1 surface. At low coverages, ethylenediamine undergoes dissociative chemisorption via an interdimer dual N-H dissociation reaction. As coverage increases, the N-H dissociation reaction is inhibited and formation of a Ge-N dative-bonded structure dominates.     

Molecular modeling of alkyl monolayers on the Si(100)-2 x 1 surface

Molecular modeling was used to simulate various surfaces derived from the addition of 1-alkenes and 1-alkynes to Si=Si dimers on the Si(100)-2 x 1 surface. The primary aim was to better understand the interactions between adsorbates on the surface and distortions of the underlying silicon crystal due to functionalization. Random addition of ethylene and acetylene was used to determine how the addition of an adduct molecule affects subsequent additions for coverages up to one molecule per silicon dimer, that is, 100% coverage. Randomization subdues the effect that the relative positions of the adsorbates have on the enthalpy of the system. For ethylene and acetylene, the enthalpy of reaction changes less than 3 and 5 kcal/mol, respectively, from the first reacted species up to 100% coverage. As a result, a (near-)complete coverage is predicted, which is in line with experimental data. When 1-alkenes and 1-alkynes add by [2 + 2] addition, the hydrocarbon chains interact differently depending on the direction they project from the surface. These effects were investigated for four-carbon chains: 1-butene and 1-butyne. As expected, the chains that would otherwise intersect bend to avoid each other, raising the enthalpy of the system. For alkyl chains longer than four carbons, the chains are able to reorient themselves in a favorable manner, thus, resulting in a steady reduction in reaction enthalpy of about 2 kcal/mol for each additional methylene unit.