Coulomb blockade transport across lateral (Ga,Mn)As nanoconstrictions

We report on magnetotransport measurements of nanoconstricted (Ga,Mn)As devices showing very large resistance changes that can be controlled by both an electric and a magnetic field. Based on the bias voltage and temperature dependent measurements down to the millikelvin range we compare the models currently used to describe transport through (Ga,Mn)As nanoconstrictions. We provide an explanation for the observed spin-valve like behavior during a magnetic field sweep by means of the magnetization configurations in the device. Furthermore, we prove that Coulomb blockade plays a decisive role for the transport mechanism and show that modeling the constriction as a granular metal describes the temperature and bias dependence of the conductance correctly and allows to estimate the number of participating islands located in the constriction.     

Technology of the (Al,Ga)As/GaAs double heterostructure lasers

Conclusion Even thqugh the LPE growth of (Al,Ga)As layers is now largely a matter of industrial development or routine, there still remain some problems that need fundamental study. We have pointed to two of them: growth of very thin layers and the influence of ambient atmosphere. The problem of automation of the growth process, while being connected with industrial LPE installations, also has a bearing on the fundamental research, e.g. it is important for reproducible preparation of very thin layers.We did not include in this paper work done in our laboratories in the field of integrated optics. A hybrid combination of DH coherent source with a MESFET GaAs device has been tested; integrated version of this optoelectronic circuit is in preparation.Invited talk at the International Conference on Radiative Recombination and Related Phenomena in III–V Compound Semiconductors, Prague, 4–7 October, 1983.     

Annealing dependent far field of GaAs-(Ga,Al)As LEDs

The far field intensity distribution of spontaneously light-emitting diodes with FABRY-PEROT structure and its dependence on different annealing processes during the diode preparation is studied. The electromagnetic field distribution in the far field is considered for a four-layer-stepdiscontinuity of the dielectric constant in a GaAs-(Ga,Al)As heterostructure diode. Even for a symmetrical dielectric constant profile the maximum luminescence intensity is not emitted necessarily in a plane normal to the light emitting surface of the diode. This cross-eyedness can be influenced by annealing. The changed far-field pattern can be evaluated if one knows the doping profile in the vicinity of the p-n junction and its changes during the annealing. Theoretical statements are in qualitative agreement with experimental results.The authors are grateful to Dr. K.Unger for valuable discussions and to Miss B.Russ for assistance with the measurements. The radioanalytical Zn determination by Mrs. G.Hänold from the VEB Halbleiterkombinat Frankfurt/Oder, Werk Stahnsdorf is gratefully acknowledged. This paper incorporates work carried out in the Arbeitsgemeinschaft AIII-BV-Halbleiter.     

Pressure tuned ferromagnetism in CeRu(2)M(2)X (M = Al, Ga; X = B, C)

The temperature (T)-pressure (P) phase diagrams are reported for the tetragonal layered compounds CeRu(2)Al(2)B, CeRu(2)Ga(2)B, and CeRu(2)Ga(2)C, studied by magnetization, specific heat and electrical resistivity. These systems exhibit localized 4f magnetic ordering with ferromagnetic ground states at T(C)?=?12.8?K, 16.3?K, and 17.2?K, respectively. Chemical and applied pressure both increase T(C) in a similar manner. The evolution of properties with chemical and applied pressure suggests that these phase diagrams may be connected in a Doniach-like picture where CeRu(2)Al(2)B is furthest from the possible quantum phase transition and CeRu(2)Ga(2)C is the nearest.     

Scattering mechanisms in (Al, Ga)As/GaAs 2DEG structures

We have prepared a large number of high mobility two-dimensional electron gas (2DEG) structures, with undoped spacer thicknesses ranging from 9 to 3200Å. For samples with 400Å of (Al, Ga)As Si-doped at 1.3×10¹⁸ cm⁻³, there is a peak in the 4K mobility at spacers of 400–800Å, with a maximum value of 2×10⁶ cm² V⁻¹ s⁻¹. Increasing the thickness of the doped (Al, Ga)As to 500Å produced an increase in mobility to 3×10⁶ cm² V⁻¹ s⁻¹ for a 400Å space sample. We have compared these results with published analyses of scattering processes in 2DEG structures, and conclude that a combination of ionised impurity and acoustic phonon scattering gives a qualitative explanation of the behaviour, but that the experimental mobility values are generally higher than those predicted theoretically.     

Beryllium diffusion across GaAs/(Al,Ga)As heterojunctions and GaAs/AlAs superlattices during MBE growth

Beryllium diffusion during MBE growth of (Al, Ga)As layers, (Al, Ga)As/GaAs heterojunctions and GaAs/AlAs superlattices has been studied by electrochemical C-V and secondary ion mass spectrometry (SIMS) concentration profiling, in conjunction with transmission electron microscopy. Diffusion times were comparatively short since they were limited to part of the growth sequence, so non-equilibrium effects had a significant influence. The results are consistent with an interstitial-substitutional mechanism in which lattice site incorporation becomes more difficult with increasing band gap enthalpy. Incorporation involves a kick-out reaction which leads to the observed disordering of the superlattices.     

Effect of high pressure on polymorphic phase transition and electronic structure of XAs (X=Al,Ga, In)

The structural and electronic properties of XAs (X = Al, Ga, In) under pressure have been investigated using ab-initio pseudo-potential approach within local density approximation in B3→B1→B2 phases. The values of phase transition pressures show reasonably good agreement with the experimental data and better than others. The B1→B2 phase transition in InAs is not seen. The volume collapse computed from equation of state (EOS) is found to be in good agreement with the experimental values. Under ambient conditions, the energy of B3 phase is lowest as compared to other phases, while at high pressures beyond B1→B2 phase transition, the energy of B2 phase is found to be lower than that of B1 phase showing correct stability of the phases. There is relatively smaller enthalpy associated with B3→B1 transition as compared to B3→B2 transition. The electronic structures have also been computed at different pressures. We have also reported the effect of pressure on energy gap and valence band width.     

Influences of As flux on the lattice constants, magnetic and transport properties of (Ga, Mn)As epilayers

A series of (Ga, Mn)As epilayers have been prepared on semi-insulating GaAs (001) substrates at 230  ^°C by molecular-beam epitaxy under fixed temperatures of Ga and Mn cells and varied temperatures of the As cell. By systematically studying the lattice constants, magnetic and magneto-transport properties in a self-consistent manner, we find that the concentration of As antisites monotonically increases with increasing As flux, while the concentration of interstitial Mn defects decreases with it. Such a trend sensitively affects the properties of (Ga, Mn)As epilayers.     

Optical transition pathways in type-II Ga(As)Sb quantum dots

We present results of room temperature photoreflectance (PR) and photoluminescence (PL) measurements of molecular-beam epitaxy (MBE)-grown GaAsSb/GaAs quantum dot structures: one with an In_0.14Ga_0.86As capping quantum well and one without it. PL was used to determine the structures’ ground-state transition energies. This result was employed in an 8-band k·p Hamiltonian to achieve a band structure of the structures, which have different electron confinement. The dot emission energies suggest a large amount of As incorporation into the dots, which is due to enhanced adatom mixing at a higher than normal growth temperature of 510 °C. Our calculations indicate a dot composition of 25-50% Sb gives the best fit to experiment. This uncertainty in composition arises due to the fact that different bowing parameters of the ternary alloy could be applied in the calculations. The theoretical analysis accounts well for the main feature in the PR spectra of both samples.     

Temperature dependence of the radiative recombination coefficient in GaAs---(Al, Ga)As quantum wells

The temperature dependence of the radiative recombination coefficient of GaAs---(Al,Ga)As quantum wells grown by MO-VPE was investigated. This was done by measuring the minority carrier lifetime as deduced from photoluminescence decay. The experimental lifetime varies as T^a, where a equals 1.1 for small well thicknesses (66Å) and increases gradually to 1.4 for a well thickness of 300Å. This is in good agreement with simple theoretical considerations.     

Electronic properties of Hf2X intermetallic compounds (X = Al, Si, Ni, Ga and Ge)

Using ¹⁰⁰Pd/¹⁰⁰Rh probes, perturbed angular correlation measurements were performed to study Pd-related defects in Si as a function of dopant concentration and dopant type. Pd-vacancy and Pd-B complexes were identified by their characteristic electric field gradients in highly doped n- and p-type Si, respectively. Both pairs exhibited a T^3/2 temperature dependence of their electric field gradients.