FexSn100-x合金颗粒薄膜的反常霍耳效应

采用离子束溅射的方法制备了一系列不同原子比的Fe_xSn_100-x合金颗粒膜，系统地研究了该体系的反常霍耳效应.在该薄膜中发现了铁磁金属/非磁金属体系中最大的霍耳电阻率，讨论了不同原子配比、薄膜厚度对霍耳效应的影响.通过研究饱和霍耳电阻率ρ_xys同电阻率ρ_xx的关系，讨论了反常霍耳效应的机理. 关键词： 反常霍耳效应 xSn_100-x薄膜')" href="#">Fe_xSn_100-x薄膜     

用反型层模型探讨n—Ge中的常温反常霍耳效应

本文用反型层模型,对常温下n-Ge中的反常霍耳效应进行了理论上的定量计算,取得了与实验一致的结果。 关键词：     

液体薄膜的反常过滤性能研究

液体具有一定的自愈能力,使得纯液体制备的薄膜具有反常过滤性,即允许大尺寸颗粒通过而截留小尺寸颗粒.针对这一特性,本文建立了能够解释该现象的理论模型,研究了影响液体膜过滤性能的主要参量:液膜过滤"孔径"受物体半径与膜半径比值、液体表面张力系数、物体的密度以及物体释放高度.设计的液体膜过滤器具有易于制备的特点,通过调整几何...     

CuBrx I1-x闪烁薄膜的制备和发光性能

为了系统地研究Br的引入对CuBr_xI_(1-x)薄膜发光强度和衰减时间的影响,通过气相沉积法在Si片上制备了CuBr_xI_(1-x)(0≤x≤1)闪烁薄膜,并测试了薄膜的发光性能和衰减曲线。结果表明,所制备的样品具有良好的CuBr_xI_(1-x)(0≤x≤1)固溶体结晶性;相对于长波段的深能级发射,CuBr_xI_(1-x)薄膜均表现出较强的光致和X射线激发近带边发射,且发射强度随Br含量的增加而大幅增加,有利于提高闪烁器件的探测效率;不过薄膜的发光衰减时间会随Br含量的增加而变慢(40～300 ps)。本研究工作对于通过选择合适组分的CuBr_xI_(1-x)闪烁材料以平衡探测效率和时间响应的测量需求具有重要意义。     

MnxSi1-x磁性薄膜的结构研究

利用X射线衍射(XRD)和X射线吸收近边结构(XANES)方法研究了在Si(100)衬底上及600℃温度条件下用分子束外延(MBE)共蒸发方法生长的MnxSi1-x磁性薄膜的结构.由XRD结果表明,只有在高Mn含量(8%和17%)样品中存在着Mn4Si7化合物物相.而XANES结果则显示,对于Mn浓度在0.7%到17%之间的MnxSi1-x样品,其Mn原子的XANES谱表现出了一致的谱线特征.基于多重散射的XANES理论计算进一步表明,只有根据Mn4Si7模型计算出的理论XANES谱才能够很好的重构出MnxSi1-x样品的实验XANES谱.这些研究结果说明在MnxSi1-x样品中,Mn原子主要是以镶嵌式的Mn4Si7化合物纳米晶颗粒存在于Si薄膜介质中,几乎不存在间隙位和替代位的Mn原子.     

分子束外延Mn4N单晶薄膜的反常霍尔效应研究

Mn₄N是立方相的反钙钛矿型晶体,具有显著的亚铁磁性和反常霍尔效应.该文利用等离子辅助分子束外延在MgO(100)衬底上生长厚度为40 nm的Mn₄N(100)单晶薄膜,通过X射线衍射θ扫描和φ扫描,证实外延层的结构符合Mn₄N单晶的空间结构特征;化学态测试结果表明Mn₄N(100)薄膜内部存在Mn⁰、Mn²⁺和Mn⁴⁺等几种价态,其实际化学式为Mn_3.6N,薄膜中存在富余的N元素;电学测试数据表明Mn₄N(100)薄膜具有以电子为载流子的反常霍尔效应(在正磁场中得到负的霍尔电阻率),正常霍尔效应的贡献约占千分之六,其反常霍尔电阻率随着测试温度升高5 K～350 K单调增大,说明温度升高导致电子散射现象加剧.通过对测试数据分析可以推断,在5 K～50 K和50 K～75 K温度范围,反常霍尔效应的来源可分别归结为电子斜散射机制和电子边跳机制.在75 K～350 K这一温度范围内,反常霍尔效应...     

霍耳效应测磁场的讨论

介绍了霍耳效应测磁场的实验目的、原理及测量方法。详细论述了霍耳效应伴随的副效应对测量结果的影响。     

H_2及H~ 对C_xH_(1-x)薄膜表面状态的影响

系统研究了 H2 流量和 H 原位处理 Cx H1-x薄膜的时间对 Cx H1-x薄膜的稳定时间、表面悬挂键密度和表面电子局域化程度的影响 ,表明 Cx H1-x薄膜的长时间 H 原位处理是减小 Cx H1-x薄膜表面悬挂键密度的有效途径。     

显微拉曼研究外延生长的BaTiO_(3-x)薄膜的结构相变与结构动力学(英文)

我们用显微拉曼、卢瑟福背散射谱、X射线散射和非对称摇摆等实验手段研究了在1 0 - 2 到1 0 - 5帕氧气压下用激光分子束外延技术生长的BaTiO3-x薄膜的结构动力学特性。测量结果表明生长氧压越低,晶格常数c和c/a越大,晶格常数a稍微减小,晶胞体积变大。随着生长氧压的减小,薄膜中氧含量减小。在3 0×1 0 - 5帕氧气压下生长的薄膜中氧缺陷可达0 48,但是样品的四方相结构可以很好的维持。显微拉曼研究进一步确定了样品都是四方相结构。另外,在BaTiO2 52 薄膜的拉曼光谱中发现高频段有两个新峰,其可能是由于氧缺陷导致的二级拉曼散射引起的。随着生长氧压的减小,拉曼峰向低频移动,表明薄膜中的应力减小。同时,拉曼峰变宽,这可能是由于氧缺陷导致的结构畸变引起的。由于在薄膜中存在二维张应力,BaTiO3单晶样品中的结构相变特征在我们的样品中从78到5 5 0K的温度范围内不存在。     

Sn1-x(In1-yCuy)xO薄膜的合成

利用真空反应蒸发技术,在氧分压约为8.5×10-2Pa、衬底温度为400℃条件下蒸发高纯度的铟、锡和铜,在玻璃衬底上制备出Sn1-x(In1-yCuy)xO薄膜.研究了蒸发源材料质量比不同的样品的薄膜结构、透过率、薄膜的方块电阻和电阻率与温度的关系.实验结果表明,Sn1-x(In1-yCuy)xO透明导电薄膜具有优良的光电特性,而且制备出的Sn1-x(In1-yCuy)xO薄膜中In的含量大大减少,可以成为ITO薄膜的潜在替代材料.     

Giant Hall effect in nonmagnetic granular metal films.

Nearly 3 orders of magnitude enhancement in the Hall coefficient is observed in Cu(x)-(SiO(2))(1--x) granular films. This large enhancement of the Hall coefficient not only is significantly larger than the prediction of the classical percolation theory, but also occurs at a metal concentration identified to be the quantum percolation threshold. Measurements of the electron dephasing length and magnetoresistance, plus the TEM characterization of microstructures, yield a physical picture consistent with the mechanism of the local quantum interference effect.     

Giant Hall effect in (GaAs)Fe granular films

A series of (GaAs)_1 − xFe_x (x: volume fraction) films with Fe granules embedded in GaAs matrix were prepared by magnetron sputtering. Hall Effect of the films was characterized. The largest saturated Hall resistivity of was observed in (GaAs)₃₀Fe₇₀ film at room temperature, which is over 2 orders larger than that of pure Fe, about 1 order larger than that of (NiFe)–(Al₂O₃) and (NiCo)–(SiO₂) granular films prepared under the same preparation conditions, and 150% larger than that of Ge₃₀Fe₇₀.     

The Hall effect in granular metal films near the percolation threshold

We have measured the Hall effect in the granular metals Au-SiO₂ and W-Al₂O₃ near their percolation thresholds. Our results indicate that when conduction is by electronic tunneling between isolated grains, the Hall coefficient is negative for both cermets. In the bulk, Au has a negative coefficient and W a positive one.     

The Hall effect in quench-condensed Ti1-x V x thin films

Measurements of the Hall coefficient of as quenched (amorphous) and annealed (polycrystalline) Ti–V alloy films are reported. The Hall coefficient is positive for both amorphous and polycrystalline films. The electrical resistivity for the as quenched samples is large (190 cm) and relatively independent of alloy concentration.     

Hall effect in granular materials

We show that in granular materials the Hall coefficient cannot, in general, be used to estimate directly the density of carriers, since it will depend on the ratio of the mobility within the grains to the conductivity mobility. The Hall voltage is predominantly determined within the individual grains, where the mobility may be quite large. On the other hand, the conductivity mobility may be considerably smaller due to a strong potential barrier between grains. The Hall coefficient depends on the ratio of these mobilities as well as on the carrier density.     

Extraordinary Hall effect on Fe-rich amorphous thin films and Fe-rich/Cu multilayers

In this study we investigated the magnetic and transport properties of thin Fe-rich amorphous films and Fe-rich/Cu multilayers. We compared the extraordinary Hall effect in these two types of samples and discussed it in terms of thickness and sample structure. The thicker films exhibited a strong in-plane magnetic anisotropy, and by decreasing film thickness both saturated Hall resistivity and Hall sensitivity increase. A Hall resistivity value of 20 μΩ cm is observed in 100 nm thick Fe-rich films at 12 K and a sensitivity of 1.3 Ω/T is obtained at room temperature. Electrical conductance increases and Hall resistivity decreases when the films are sandwiched with Cu.     

Anomalous Hall effect in granular alloys

A theoretical study is performed of the anomalous Hall effect in granular alloys with giant magnetoresistance. The calculation is carried out within the Kubo formalism and the Green’s function method. The mechanism of asymmetric scattering of the spin-polarized current carriers is considered with allowance for a size effect associated with scattering not only by one grain, but also with more complicated processes of transport among two and three grains. It is shown that scattering of conduction electrons by the interfaces of the grains and the matrix has a substantial effect on the magnitude of the anomalous Hall effect and determines its sign. In general, correlation between the quantities ρ _H and ρ ² is absent, where ρ _H is the Hall resistivity and ρ is the total resistivity of the granular alloy. However, numerical calculation shows that for certain values of the model parameters ρ _H∼ρ ^3.8 and for these same parameter values the amplitude of the giant magnetoresistance reaches 40%, which is found to be in quantitative agreement with the experimental data for Co₂₀Ag₈₀ alloys [P. Xiong, G. Xiao, J. Q. Wang et al., Phys. Rev. Lett. 69, 3220 (1992)]. It is also shown that increasing the resistivity of the matrix leads to a significant growth in the anomalous Hall effect, and more substantial growth for alloys with small grain size, which is in good agreement with experiment [A. B. Pakhomov, X. Yan, and Y. Xu, J. Appl. Phys. 79, 6140 (1996); [X. N. Jing, N. Wang, and A. B. Pakhomov, Phys. Rev. B 53, 14032 (1996)]. Zh. éksp. Teor. Fiz. 112, 2198–2209 (December 1997)     

Anomalous Hall effect in granular Fe/SiO2 films in the tunneling-conduction regime

It is established that the Hall effect in Fe/SiO₂ nanocomposite films in the activational tunneling conduction range is anomalous, i.e., the Hall resistivity ρ_h is proportional to the magnetization and is due to the spin-orbit interaction. The parametric coupling of the Hall and longitudinal (ρ_xx) resistances ρ_h ∝ ρ _xx ^m (with temperature as the parameter) is characterized by a much lower value of the exponent m than in a uniform ferromagnetic metal. This circumstance is attributed to the characteristic features of the Hall effect mechanism in the hopping regime — in our case, the interference of the amplitudes of tunneling transitions in a set of three granules. Pis’ma Zh. éksp. Teor. Fiz. 70, No. 2, 87–92 (25 July 1999)