Energy transfer and annealing behavior of luminescence in Dy-doped PbWO4 single crystal

The Dy³⁺: PWO single crystal was subsequently annealed in air atmosphere at a temperature of 500°C, 550°C, 600°C, 700°C, 800°C, 900°C, and 1000°C, respectively. X-ray excited luminescence spectra were measured before and after each step of annealing. Annealing experiments confirmed the energy transfer-taking place from PbWO₄ (PWO) host to Dy³⁺ ions, followed by the enhancing characteristic emission of Dy³⁺ ions. In the process of annealing, the luminescence of PWO host was significantly reduced while that of Dy³⁺ was increased simultaneously. Annealing at a temperature below 700°C suppressed the blue luminescence of the PWO host and enhanced its green components, while the emission of Dy³⁺ is increased to some extent. Further annealing at higher temperature strongly reduced the luminescence of the PWO host, while the emission of Dy³⁺ was greatly increased. Interstitial oxygen O_i could play an important role in the luminescence. Annealing could modify the luminescence of Dy³⁺ ions in PWO, which may be useful in terms of some application purposes.     

Luminescence spectra of stilbene-3 doped lead-tin-fluorophosphate glass excited by VUV-UV synchrotron radiation

The stilbene-3 doped lead-tin-fluorophosphate glasses were successfully prepared and the luminescence spectra obtained from VUV-UV synchrotron radiation were investigated. The emission peaked about 440 nm from the undoped glass is observed at low temperature but quenches at room temperature. The doped glass exhibits strong characteristic emission of stilbenen-3 with 467 and 436 nm Gaussian bands under ultraviolet 250-330 nm excitation (characteristic excitation of stilbene-3) but weak emission under vacuum ultraviolet 190 nm excitation (host excitation). It is suggested that the energy transfer from host to the stilbene-3 dye can occur but the efficiency is still fairly low.     

Luminescence of CaS and MnS nanocrystallites co-activated sol-gel derived silica xerogel

CaS and MnS nanocrystallites co-activated sol-gel derived silica xerogel has been prepared by sol-gel processing. Their photoluminescence characteristics have been evaluated and compared with those of the undoped silica xerogel. Two emission bands have been observed from the doped sample, one at 440 nm while the other at 580 nm. CaS and MnS nanocrystallites embedded in sol-gel derived silica xerogel show sharp emission band. The novel luminescence phenomenon is attributed to the luminescent centers of CaS and MnS in the silica xerogel.     

钨酸铅闪烁晶体垂直梯度凝固法生长及光学性能研究

本文报道了垂直梯度凝固法(VGF)生长PWO晶体的研究结果.通过优化工艺参数,成功获得直径25mm、长度140mm的PWO晶体.通过测试PWO晶体的XRD、透过光谱、荧光光谱等,研究了所得晶体的光学性能.结果表明:VGF法生长PWO晶体在350～420 nm处的光学透过率明显提高,荧光发光主峰位于435 nm,是快发光峰,但慢发光比例有所增加.     

Structural and optical response of 2‐Mercaptoethonal capped CdS nanocrystals to Fe3+ ions

Cadmium sulfide (CdS) semiconductor nanocrystals (NCs) doped with Fe³⁺ have been synthesized via a solution‐based method utilizing dopant concentrations of (0–5%) and employing 2‐mercaptoehonal as a capping agent. X‐ray diffraction (XRD) results showed that the undoped CdS NCs are in mixed phase of cubic and hexagonal, where as the doped CdS NCs are in hexagonal phase. The crystallite size was increased from ∼1.2 nm to ∼2 nm. Diffuse reflectance spectroscopy studies (DRS) reveals that the band gap energy was decreased with Fe doping and it lies in the range of 2.58 ‐ 2.88 eV. Photoluminescence (PL) spectra of undoped CdS NCs show a strong green emission peak centered at 530 nm and a weak red emission shoulder positioned at 580 nm. After doping all the luminescence intensity was highly quenched and the green emission peak was shifted to orange region (580 nm), but the position of weak red emission shoulder was unaltered with doping. FTIR studies revealed that the NCs were sterically stabilized by 2‐mercaptoethanol. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Studies on optical properties of polycrystalline SnO2:Sb thin films prepared using SnCl2 precursor

Optical properties of spray deposited antimony (Sb) doped tin oxide (SnO₂) thin films, prepared from SnCl₂ precursor, have been studied as a function of antimony doping concentration. The doping concentration was varied from 0‐4 wt.% of Sb. All the films were deposited on microscope glass slides at the optimized substrate temperature of 400 °C. The films are polycrystalline in nature with tetragonal crystal structure. The doped films are degenerate and n‐type conducting. The sheet resistance of tin oxide films was found to decrease from 38.22 Ω/□ for undoped films to 2.17 Ω/□ for antimony doped films. The lowest sheet resistance was achieved for 2 wt.% of Sb doping. To the best of our knowledge, this sheet resistance value is the lowest reported so far, for Sb doped films prepared from SnCl₂ precursor. The transmittance and reflectance spectra for the as‐deposited films were recorded in the wavelength range of 300 to 2500 nm. The transmittance of the films was observed to increase from 42 % to 55 % (at 800 nm) on initial addition of Sb and then it is decreased for higher level of antimony doping. This paper investigates the variation of optical and electrical properties of the as‐deposited films with Sb doping. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Photoluminescence characteristics of Mg- and Si-doped GaN thin films grown by MOCVD technique

We have studied the optical, structural and surface morphology of doped and undoped GaN thin films. The p- and n-type thin films have been successfully prepared by low-pressure MOCVD technique by doping with Mg and Si, respectively. The different carrier concentrations were obtained in the GaN thin films by varying dopant concentrations. Photoluminescence (PL) studies were carried to find the defect levels in the doped and undoped GaN thin films at low temperature. In the undoped GaN thin films, a low intensity and broad yellow band peak was observed. The donor–acceptor pair (DAP) emission and its phonon replicas were observed in both the Si or Mg lightly doped GaN thin films. The dominance of the blue and the yellow emissions increased in the PL spectra, as the carrier concentration was increased. The XRD and SEM analyses were employed to study the structural and surface morphology of the films, respectively. Both the doped and the undoped films exhibited hexagonal structure and polycrystalline nature. Mg-doped GaN thin films showed columnar structure whereas Si-doped films exhibited spherical shape grains.     

Synthesis, growth and doped properties of PbWO4 crystals

High purity polycrystalline PbWO₄ (PWO) has been synthesized by a chemical method. Pure and doped PWO crystals were grown by using a Czochralski technique. Transmittance spectra, light yield and decay constants of the crystal were measured. The effect of PWO crystal quality and doped ions on its scintillating properties is discussed in this paper.     

Growth of trivalent ions doped PbWO4 crystals and their scintillation properties

Undoped and series of trivalent ions(including La, Y, Gd and Tb) doped PWO crystals were grown from 5N raw materials by using Czochralski technique. Trivalent ions doping improved the transmittance, fast components of luminescence and radiation damage resistance for compensating structure defects. Corresponding, the fraction of light yield at shorter collecting time was increased. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

稀土掺杂Sr5(PO4)2SiO4发光材料的制备工艺研究

采用高温固相法制备了稀土掺杂Sr5(PO4)2SiO4发光材料,研究了样品的发光性能,研究了预烧结温度、烧结温度、烧结时间对样品发光性能的影响.Sr4.975(PO4)2SiO4∶0.025Eu2荧光粉能够被400 nm左右的近紫外光激发,发射光谱受基质品格结构影响呈现双峰发射现象.实验结果表明,预烧结温度选择850℃,烧结温度选择1400℃,烧结时间选择600 min,制得的样品的发光性能最佳.     

Ce3+掺杂CsPbBr3纳米晶的制备与性能

采用热注入法制备Ce³⁺掺杂CsPbBr₃纳米晶,利用XRD、TEM、XPS、UV-Vis、PL、Time-resolved fluorescence spectroscopy、J-V曲线测试等对样品的晶体结构、微观形貌、化学组成、光吸收性能、发光性能、荧光寿命和荧光太阳能集光器(LSC)的光学效率进行表征。实验结果表明:采用热注入法成功制备出分散性良好、平均晶粒大小为12.26 nm的立方相Ce³⁺掺杂CsPbBr₃纳米晶。Ce³⁺掺杂CsPbBr₃纳米晶的光学带隙和荧光发射峰强度随着Ce/Pb摩尔比的增加呈现先增大后减小的变化趋势,当n(Ce)/n(Pb)=0.25时,光学带隙达到最大为2.416 eV,发光强度最强,荧光发射峰由纯CsPbBr₃纳米晶的515 nm蓝移到510 nm,Ce³⁺掺杂CsPbBr₃纳米晶的发光性能与稳定性均得到增强。Ce³⁺掺杂CsPbBr₃纳米晶与聚苯乙烯溶液制备复合薄膜型LSC器件的光学效率ηopt最高达到6.81%。     

Up-conversion and photon avalanche in oxy-fluoride nano-structured glasses doped with Ho3+

Transparent nano-crystalline glass–ceramics (nano-structured glasses) were prepared from oxy-fluoride precursor glass doped with HoF₃ and their luminescence properties were investigated. Visible blue, green and red emissions were observed, and the relative intensity of the green and red emission was strongly dependent on HoF₃ concentration. Under 750 nm pumping, the intense green emission due to the photon avalanche process was observed at room temperature from nano-structured glass doped with high (0.5 mol%) concentration of HoF₃.     

Luminescence characteristics of undoped and Eu‐doped GdCa4O(BO3)3 single crystals and nanopowders

Single crystals of GdCa₄O(BO₃)₃ (GdCOB) pure and doped with Eu concentration of 1 and 4 at% were grown by the Czochralski and micropulling‐down methods. The distribution of Eu ions in GdCOB crystals was uniform. The substitutions of Eu³⁺ in Gd, Ca(1) and Ca(2) cation sites and eventually formation Eu²⁺ have been investigated. The spectroscopic properties of crystals are compared with the properties of nanopowders obtained by sol‐gel method. Radioluminescence spectra of undoped GdCOB crystal show the characteristic emission of Gd³⁺ at about 312 nm, whereas this emission dramatically decreases in Eu‐doped crystals upon X‐ray excitation, as well as in Eu‐doped nanopowders excited in vacuum ultraviolet (VUV) region. The VUV excitation in the range 125‐333 nm for Eu‐doped samples leads to strong emission in red coming from the ⁵D₀ multiplet of Eu³⁺, only. In the photoluminescence decay kinetics of 312 nm emissions substantial shortening and departure for single exponential decay in Eu‐doped samples is clearly observed. Higher Eu doping results in further acceleration of the decay. In undoped GdCOB crystal, the lifetime of the Gd^{3+ 6}P_7/2 multiplet is 2.79 ms. The Eu^{3+ 5}D₀ decay kinetics monitored at 613 nm are rather constant. Numerical fitting of fully exponential curves, reveals lifetimes 2.7 ms for nanopowder and 2.5 ms for single crystal. The results suggest that this material may be used as a red phosphor in plasma display panels in nanopowder form because of strong excitation band of Eu³⁺ luminescence in the 160‐200 nm regions. Contrary to nanopowder sample, such an excitation band, attributed to the Gd³⁺–O^2– charge transfer was not observed in crystal obtained by the micropulling‐down method. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and characterization of undoped and thallium doped cesium iodide single crystals

Single crystals of pure and thallium (Tl) doped cesium iodide (CsI) have been grown by melt growth (Bridgman) technique. The grown crystals were subjected to powder X-ray diffraction and high-resolution XRD analysis. The cut and polished crystals were characterized for luminescence studies. UV-visible transmission studies have been carried out on the grown crystal in the wavelength range 200–650 nm. From the transmission spectrum it was found that the cut off wavelength increases with increase in Tl concentration and the transmittance is about 70%. The 0.06 mol% of Tl doped CsI crystal shows a good energy resolution of 7.6%. The hardness decreases for increasing the doping concentration. Etching studies have been carried out on doped and undoped crystals using methanol and water as etchant.     

Ce3+激活NaSr4(BO3)3荧光粉的格位占据和发光性质研究

采用高温固相法制备了一系列可被紫外光有效激发的Na_1+xSr_4-2x(BO₃)₃∶xCe³⁺荧光粉,并通过X射线衍射、扫描电镜、荧光光谱等测试方法对样品的物相结构、形貌和发光特性进行了表征及分析。X 射线衍射结果显示,Ce³⁺成功掺入到基质NaSr₄(BO₃)₃中;利用高斯峰拟合、多光谱对比等手段,分析并验证了发光中心Ce³⁺占据了NaSr₄(BO₃)₃中Sr²⁺(1)和Sr²⁺(2)两个格位;研究了不同浓度Ce³⁺的掺杂对发光位置和发光强度的影响,随着Ce³⁺掺杂浓度的提高,发射光谱出现红移,发光强度出现增强→减弱→再增强的趋势;将荧光粉的发射光谱与植物光合色素吸收光谱进行对比,发现它不仅可以吸收300~350 nm的紫外光,发射光谱还很好地覆盖了植物光合色素所需的蓝光区吸收波段,证明其在农业生产的转光剂方面有潜在应用价值。     

透明SiO2-Al2O3-CaO-CaF2 微晶玻璃中Tb3+的发光性能研究

通过对1.0 mol;Tb2O3掺杂45SiO2-20Al2O3-10CaO-25CaF2玻璃进行热处理制备出透明微晶玻璃,经XRD分析微晶玻璃内析出了大小约为27 nm 的CaF2颗粒.并分别在紫外和X射线激发下研究了Tb3+在基质玻璃和透明微晶玻璃中的发光行为.结果表明:微晶玻璃中CaF2纳米晶颗粒的析出有利于提高Tb3+的发光性能,紫外激发时,Tb3+的545 nm特征发光强度增强了4倍;而X射线激发时,Tb3+的545 nm特征发光强度增加了3.5倍.     

Er3+单掺与Er3+/Yb3+共掺NBT-CT无铅压电陶瓷的上转换发光性能研究

采用固相烧结法制备一系列Er³⁺单掺与Er³⁺/Yb³⁺共掺0.96Na_0.5Bi_0.5TiO₃-0.04CaTiO₃(NBT-CT∶xEr³⁺/yYb³⁺,x=0.002~0.015,y=0.010)无铅压电陶瓷。通过X射线衍射仪和荧光光谱仪分别对样品的物相结构和上转换发光特性进行表征和分析。结果表明,样品的主晶相为NBT晶相。在波长为980 nm的近红外光激发下,Er³⁺单掺与Er³⁺/Yb³⁺共掺NBT-CT陶瓷均呈现强的以绿光为主的Er³⁺特征上转换发光。在NBT-CT∶xEr³⁺中,当x=0.010时上转换发光性能最佳;Yb³⁺能够起到敏化作用,明显增强Er³⁺的上转换发光强度。     

Reduction and luminescence of europium ions in glass ceramics containing SrF2 nanocrystals

Reduction of Eu³⁺ → Eu²⁺ and luminescence of europium (Eu) ions in glass ceramics containing SrF₂ nanocrystals have been investigated. The formation of SrF₂ nanocrystals in glass ceramics was confirmed by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Blue luminescence of the Eu²⁺ ions was observed in the Eu doped glass ceramics which were prepared by the heat treatment of the glass in air atmosphere. The double-exponential decay curves of ⁵D₀ state of Eu³⁺ in the Eu doped glass ceramics indicated that there were two different surroundings of the Eu ions in the glass ceramics.     

Influence of trivalent ions codoping on the Mo:PbWO4 luminescence properties

Trivalent ions codoping Mo:PWO boules were grown along the c-axis using the Czochralski technique. Trivalent ions codoping improved the fast components of luminescence for Mo:PWO due to suppression/compensation of hole-trapping centers. Correspondingly, trivalent ions codoping increased the fast components of the light yield. The La³⁺ and Gd³⁺ concentration in the crystal gradually decreased along the growth direction because they increased the melting point. The Y³⁺ concentration increased along this direction due to the different influence on the melting point. Compared with La:Mo:PWO, Y:Mo:PWO shows a more uniform transmittance along the growth direction.     

Raman spectroscopic investigations of Mn2+ doping effects on the densification of acid-catalyzed silica xerogels

Undoped and Mn²⁺-doped silica xerogels were prepared from hydrolysis and condensation of tetramethyl orthosilicate (TMOS). The xerogels were characterised by density measurements and fluorescence and Raman spectroscopies. Raman measurements over the range 4–1200 cm⁻¹ showed that the number of three- and four-membered rings in the xerogel network depends on the thermal treatment and on the concentration of Mn²⁺ ions. Indeed, both structures are found to be more numerous in the gel network of the doped samples than in the undoped one, showing that doping with Mn²⁺ hampers the destruction of three- and four-membered rings. In the low-wave number region (4–100 cm⁻¹), doping with manganese ions was found to affect the position of the boson peak. The boson peak profiles were used to deduce that the sizes of the cohesive domains in the gel-derived silica network are much larger for doped samples (11 nm for 500 ppm) than for undoped ones (2.1 nm).