Photon emission from clean and oxygenated Si and SiO2 surfaces bombarded by 5 keV krypton ions

The effect of oxygen on the light emission from a Si (1 0 0) semiconductor bombarded by energetic Kr⁺ ions has been studied in the 200–300 nm wavelength range. The influence of oxygen was verified by studying the optical spectra of SiO₂ bombarded under similar experimental conditions. It has been found that the measured intensities of the emitted photons are always higher in the presence of oxygen, even higher than those obtained for SiO₂. The electron-transfer model can explain our experimental observations. We do believe that in the presence of oxygen, an intermediate structure of silicon sub-oxide SiO_X<2 is formed on silicon surface, which is responsible for the increase of photon emission. In addition, the radiative dissociation process and breaking of chemical bond seems contribute to the enhancement of emitted photons intensity.     

Spectrophotometric Study of Luminol in Dimethyl Sulfoxide–Potassium Hydroxide

The spectrophotometric study of luminol (LH₂) in dimethyl sulfoxide (DMSO), DMSO-water solutions, and alkaline DMSO and DMSO-water solutions has been done, focusing on the effect of the KOH additon on LH₂ absorption and fluorescence properties. The absorption spectra indicate an acid-base equilibrium, and the luminol dianion (L^2–) formation at 3 × 10^–4 – 2.4 × 10^–3 M KOH. The decrease of the fluorescence intensity and the variation of the excitation spectra of LH₂-DMSO-KOH solutions with KOH concentration have been similarly explained. The acid-base process is reversible. The addition of HCl to the solution with 3.0 × 10^–3 M KOH leads to an increase of the fluorescence intensity to its highest value, observed in pure DMSO. The addition of HCl to the LH₂-DMSO solution leads to the decrease of the fluorescence intensity as a result of the LH⁺ ₃ cation formation. In LH₂-DMSO-water, the fluorescence band is shifted from 405 nm to 424 nm and increased in the intensity. In the presence of KOH (in LH₂-DMSO-water-KOH solution) a new band appears, with the maximum at 485 nm and the band at 405 nm decreased. The changes in fluorescence lifetimes also evidence the different chemical species formed.     

Diffusion of silicon in titanium nitride films. Efficiency of TiN barrier layers

Two kinds of reactively evaporated titanium nitride films with columnar (B ₀ films) and fine-grained film structure (B ₊ films) have been examined as diffusion barriers, preventing the silicon diffusion in silicon devices. The silicon diffusion profiles have been investigated by 2 MeV ⁴He⁺ Rutherford backscattering spectrometry (RBS) after annealing at temperatures up to 900° C, in view of application of high-temperature processes. The diffusivity from 400 to 900° C: D (m² s^–1)=2.5×10^–18 exp[–31 kJ/mol/(RT)] in B ₀ layers and D (m² s^–1)=3×10^–19 exp[–26 kJ/mol/(RT) in B ₊ TiN layers. The diffusivities determined correspond to grain boundary diffusion, the difference being due to the different microstructure. The very low diffusivity of silicon in B ₊ TiN layer makes it an excellent high-temperature barrier preventing silicon diffusion.     

Small angle neutron scattering from oxygen precipitates in silicon

The formation of silicon oxide precipitates from Czochralski grown silicon depends on the time and temperature of the heat treatment as well as on the initial content of interstitially dissolved oxygen. Samples containing between 5×10¹⁷ O_i/cm³ and 13×10¹⁷ O_i/cm³ have been heated at 750° C for 96 h. SiO₂ precipitates of various shape and size have been obtained and investigated by means of small angle neutron scattering (SANS) in the Q-range 0.05 Å^–1<Q<0.2 Å^–1. The obtained SANS patterns reveal a typical anisotropy of their intensity distribution, which splits into a central peak at Q<0.1 Å^–1 due to the shape of the individual particles and a number of weak intensities for large Q-values, originating from a correlation between defects, possibly between the precipitates. While these correlation peaks in the SANS patterns are seen best for rather low values of about (5–7)×10¹⁷ O_i/cm³ oxygen content, the central peak anisotropy is most pronounced for higher values of ca 10×10¹⁷ O_i/cm³. The integrated intensity of the central peak increases with increasing initial oxygen content. For comparison, untreated samples of the same initial oxygen content do not reveal any anisotropic SAN scattering or a broadened central peak beam.     

Porous silicon with β-cyclodextrin modified surface for photoluminescence sensing of organic molecules in gas and liquid phase

Porous silicon surface was modified by photochemically activated hydrosilylation reaction with permethyl-6^I-alkenoylamino-6^I-deoxy-β-cyclodextrins terminated with linear alkenoyl spacers of various lengths. As compared to unmodified surface, derivatized surfaces revealed modified photoluminescence response in the presence of controlled amounts of various organic molecules in gas and liquid phase. For the selected set of analytes we observed most significant modification of photoluminescence response for aromatic compounds what corresponds to optimum molecular size for strong host–guest interaction with β-cyclodextrin cavity. Aliphatic compounds quenched photoluminescence from both unmodified and surface modified porous silicon. For low gas phase concentrations of aromatic analytes β-cyclodextrin modified porous silicon revealed photoluminescence enhancement, at higher concentrations common photoluminescence quenching was observed. The size-dependent host–guest interaction between β-cyclodextrin cavity and detected molecule was observed in photoluminescence quenching in the presence of aliphatic molecules in liquid phase. The role of the strength of host–guest interactions between detected analytes and β-cyclodextrin cavity on photoluminescence sensor response is discussed.     

Absorption of subpicosecond ultraviolet laser pulses in high-density plasma

The absorption of 250 fs KrF laser pulses incident on solid targets of aluminum, copper and gold has been measured for normal incidence as a function of laser intensity in the range of 10¹²–10¹⁴ W cm^–2 and as a function of polarization and angle of incidence for the intensity range of 10¹⁴–2.5×10¹⁵ W cm^–2. As the intensity increases from 10¹² W cm^–2 the reflectivity at normal incidence changes from the low-intensity mirror reflectivity value to values in the range of 0.5–0.61 at 10¹⁴ W cm^–2. For this intensity maximum absorption of 63–80% has been observed for p-polarized radiation at angles of incidence in the range of 54°–57°, increasing with atomic number. The results are compared with the expected Fresnel reflectivity from a sharp vacuum-plasma interface with the refractive index given by the Drude model and also to numerical calculations of reflectivity for various scale length density profiles. Qualitative agreement is found with the Fresnel/Drude model and quantitative agreement is noticed with the numerical calculations of absorption on a steep density profile with normalized collision frequencies, v/, in the range of 0.13–0.15 at critical density and normalized density gradient scale lengths, L/₀, in the range of 0.018–0.053 for a laser intensity of 10¹⁴ W cm^–2.At 2.5×10¹⁵ W cm^–2 a small amount of preplasma is present and maximum absorption of 64–76% has been observed for p-polarized radiation at angles of incidence in the range of 45°–50°.Dedicated to Prof. Dr. Rudolf Wienecke on the occasion of his 65^th birthdayOn leave from: Department of Electrical Engineering, University of Alberta, Edmonton, T6G 2G7, Canada     

Surface properties of laser processed ductile iron

On laser melt treatment,Sliding Wear of pearlitic ductile iron reduced from severe metallic wear to oxidative mild wear by nearly two orders of magnitude at 7.5 ms^–1 over a load range of 14–31 kg cm^–2; resistance toCavitation Erosion improved by a factor ofseven in corrosive media and surface hardness increased from 20–22 to 40–58 HR_c. Laser melting could effectively reduceCorrosion rates in dilute acids by nearly 40%.These improvements were caused by the ultrafine microstructure (1–41 ,DAS), microhardness (700–900,HV _0,1) and the consequent high resistance to plastic flow and subsurface crack initiation.In this investigation, pin-on-disc adhesive wear, ultrasonic vibratory cavitation erosion and potentiodynamic corrosion in synthetic sea water and 0.01 N H₂SO₄, were assessed after laser surface melting or transformation hardening of hyper-eutectic ductile iron, typically employed in automotive and marine engine components by using CO₂ CW or Nd-YAG pulsed high power laser. Also the processing parameters viz, beam power (P), scan rate (U), and specific energy intensity (P/UD _b ² ) for threshold and specific depth of transformation hardening or melting have been determined.     

Nanostructuring Si surface and Si/SiO2 interface using porous-alumina-on-Si template technology. Electrical characterization of Si/SiO2 interface

In this work, anodic porous alumina thin films with pores in the nanometer range are grown on silicon by electrochemistry and are used as masking material for the nanopatterning of the silicon substrate. The pore diameter and density are controlled by the electrochemical process. Through the pores of the alumina film chemical oxidation of the silicon substrate is performed, leading to the formation of regular arrays of well-separated stoichiometric silicon dioxide nanodots on silicon, with a density following the alumina pores density and a diameter adjustable by adjusting the chemical oxidation time. The alumina film is dissolved chemically after the SiO₂ nanodots growth, revealing the arrays of silicon dioxide dots on silicon. In a next step, the nanodots are also removed, leaving a nanopatterned bare silicon surface with regular arrays of nanopits at the footprint of each nanodot. This silicon surface structuring finds interesting applications in nanoelectronics. One such application is in silicon nanocrystals memories, where the structuring of the oxidized silicon surface leads to the growth of discrete silicon nanocrystals of uniform size. In this work, we examine the electrical quality of the Si/SiO₂ interface of a nanostructured oxidized silicon surface fabricated as above and we find that it is appropriate for electronic applications (an interface trap density below 1–3×10¹⁰ eV⁻¹ cm⁻² is obtained, indicative of the high quality of the thermal silicon oxide).     

A study of electronic states near the interface in ferroelectric-semiconductor heterojunction prepared by rf sputtering of PbTiO3

Interface states in the ferroelectric-semiconductor junction have been investigated from analyses of DLTS andC-V data. Two trap levels are located at 0.21 and 0.36 eV below the conduction band near the silicon side of the interface in the MFS (Metal-Ferroelectric-Semiconductor) structure. The interface states density has been drastically reduced by putting an oxide layer between ferroelectric and semiconductor with certain heat treatment in H₂ atmosphere at 500 °C. It has been found that the MFMOS (Metal-Ferroelectric-Metal-Oxide-Semiconductor) structure shows the least interface states density (less than 10¹¹cm^–2eV^–1) with the maximal dielectric constant of PbTiO₃ thin films.     

Optical Properties of ZrO2–Containing Anodic Coatings on Aluminum

Anodic oxide coatings (AOC) formed at the potentials of spark breakdowns in aqueous solutions of potassium hexafluorozirconate (K₂ZrF₆) contain up to 36 wt.% of Zr. The modification of ZrO₂ in AOC is tetragonal. The reflection coefficients of AOC have been measured in the range 430–670 nm. After UV irradiation for a few hours the reflection coefficient decreases by several percent. The treatment of AOC in a solution containing F^– and [Fe(CN)]^3– ions leads to a change in the aluminum and zirconium concentrations in the surface layer and to an increase of the AOC reflectivity.     

Blue Photoluminescence of Oxidized Films of Porous Silicon

It is found that the films of n ⁺-type porous silicon of low (10–50%) porosity exhibit photoluminescence in the region 400–500 nm after a 5-month storage in an air atmosphere. The spectrum of blue photoluminescence of the least porous but strongly oxidized films has maxima at 417, 435, and 465 nm. The same spectrum structure manifests itself upon the introduction of an Er³⁺- and Yb³⁺-containing complex. The mechanisms of blue photoluminesence are discussed.     

90–120 GHz millimeter wave power head

Power-voltage and frequency characteristics of power heads for 90–120 GHz TE₁₀-mode millimeter waves are presented. Operation of the power heads is based on thermo-e.m.f. of hot charge carriers in silicon. The head has been tested both in the pulsed and continuous generation regime. The experiments were carried out in the power range of 2·10^–3–4 W. In the pulse regime, the shortest pulse duration was 1s.     

Dispersive optical constants of a-Se100−xSbx films

Thin films of amorphous Se_100−xSb_x (x=5,10 and 20 at%) system are deposited on a silicon substrate at room temperature (300 K) by thermal evaporation technique. The optical constant such as refractive index (n) has been determined by a method based on the envelope curves of the optical transmission spectrum at normal incidence by a Swanpoel method. The oscillator energy (E_o), dispersion energy (E_d) and other parameters have been determined by the Wemple–DiDomenico method. The absorption coefficient (α) has been determined from the reflectivity and transmitivity spectrum in the range 300–2500 nm. The optical-absorption data indicate that the absorption mechanism is a non-direct transition. We found that the optical band gap, E_g^opt, decreases from 1.66±0.01 to 1.35±0.01 eV with increase Sb content.     

Ion–ion interactions of LiPF6 and LiBF4 in propylene carbonate solutions

Self-diffusion coefficients of Li⁺ D_Li⁺, PF₆⁻ D_PF6⁻ and solvent propylene carbonate (PC) D_PC in LiPF₆−PC solutions were determined at 298 K by the pulse gradient spin echo (PGSE) NMR technique over the salt concentration range of 0.1–3.0 M (M = mol dm^– 3). The order of the diffusion coefficients was found to be D_Li⁺ < D_PF6⁻ < D_PC over the concentration range examined, and they were monotonically decreased with increasing the salt concentration. Haven ratio Λ/Λ_NMR, where Λ and Λ_NMR represent the ionic conductivity measured electrochemically and that estimated via the Nernst-Einstein equation using the diffusion coefficient, respectively, was evaluated as the measure of the ion–ion interaction in the LiPF₆–PC solutions. Though Λ/Λ_NMR values for LiPF₆-solutions decrease with increasing the salt concentration, they were greater than those for LiBF₄–PC solutions over the whole concentration range examined, which indicates that the ion pair formation ability of PF₆^– ion is weaker than that of the BF₄^– ion. The smaller value of the ionic conductivity for the highly concentrated LiPF₆–PC solution (above 2.0 M) than that of the LiBF₄-solutions can be attributed to the more rapidly increased viscosity relative to the LiBF₄-solution. Classic molecular dynamics (MD) simulations for the respective LiPF₆ and LiBF₄-solution of 0.5 and 1.0 M were also carried out based on the effective pair potentials. Diffusion coefficients, ionic conductivity and Haven ratio for these solutions were calculated from MD trajectories, and they qualitatively agree with those evaluated by experiments. Pair correlation functions g_LiO(r) (for Li⁺–O (PC) pair) and g_LiPF6(r) (for Li⁺–PF₆^– pair) or g_LiBF4(r) (for Li⁺–BF₄^– pair) revealed that the lithium ion weakly forms the contact ion pairs with PF₆^–, whilst strongly with BF₄^–, which supports the present experimental results. Moreover, the simulation results show that both anions in the contact ion pairs predominantly take the monodentate form, which is in contrast to the multidentate coordination predicted by ab initio calculation in gas phase.     

Luminescence centers in porous silicon

Photoluminescence studies on porous silicon show that there are luminescence centers present in the surface states. By taking photoluminescence spectra of porous silicon with respect to temperature, a distinct peak can be observed in the temperature range 100–150 K. Both linear and nonlinear relationships were observed between excitation laser power and the photoluminescence intensity within this temperature range. In addition, there was a tendency for the photoluminescence peak to red shift at low temperature as well as at low excitation power. This is interpreted as indicating that the lower energy transition becomes dominant at low temperature and excitation power. The presence of these luminescence centers can be explained in terms of porous silicon as a mixture of silicon clusters and wires in which quantum confinement along with surface passivation would cause a mixing of andX band structure between the surface states and the bulk. This mixing would allow the formation of luminescence centers.     

Rapid growth of ultra thin SiO2 films by a large-area electron beam

Rapid growth of ultra thin oxide films (40–180Å) of silicon using a low-energy large-area electron beam has been performed with a pressure ratio of 31 (O₂/He) and a total pressure of 0.5–0.7 Torr. A higher oxidation rate of about 625Ų/s is found for shorter irradiation time of the e-beam in the e-beam dose range 0.75–3 Coulomb/cm² and at lower substrate temperature 540–740°C. AES and XPS demonstrated a rapid electron-stimulated oxidation process of the Si surface. For the grown ultra thin oxide films, C-V characteristics, dielectric strength, uniformity of the film over the entire Si wafer and its thickness as a function of the processing time of the e-beam are also presented.     

Electrical characteristics of the rf-excited oxygen plasma-cathodization-grown SiO2/Si interface

The electrical properties of the SiO₂/n-type Si(100) interface, where the silicon-oxide layer was grown by an electrodeless rf oxygen-plasma-cathodization technique, were investigated usingC-V and DLTS methods. Interface traps with high density in the range of 10¹² eV^–1 cm^–2 and a capture cross section as large as 10^–18 cm² were found in the upper region of the silicon forbidden gap. After a post-annealing process, typically at 400°C for 30 min in dry N₂ atmosphere, their densities and capture cross sections were reduced to the range of 1–2 × 10¹¹ eV^–1 cm^–2 and 10^–19 cm^–2, respectively. Apparant differences in DLTS curves before and after thermal annealing were also observed. Results are qualitatively explained by considering the specific oxidation and annealing mechanism of this low-temperature silicon-oxidation technique.     

Charge carriers and mobility of Cu-Ti ferrite

The concentration and drift mobility of charge carriers in Cu_1–x Ti _x Fe₂O₄ ferrite are calculated, over a wide range of temperatures (300–773 K), employing d.c. conductivity and thermoelectric power data. With increasing temperature the concentration of charge carriers decreases whilst the drift mobility exhibits an exponential increase. Over the above-mentioned temperature range, the obtained density of charge carriers varies between 10²¹ and 10²² cm^–3 whereas the drift mobility has values between 10^–8 and 10^–4 cm²/V s. The results are discussed on the basis of a small-polaron hopping conduction. The activation of the d.c. conductivity has been attributed to the thermal activation of the mobility.     

Annealing behavior ot trap-centers in silicon containing A-swirl defects

The annealing behavior of trap-centers was studied in float-zone silicon wafers containing A-swirl defects. Samples from areas of high and low A-swirl density were annealed in nitrogen ambient between 100° and 900 °C, and analysed using the Deep Level Transient Spectroscopy. The results indicate, that two levels atE _c }-0.07 eV, _n=4.6×10^–16 cm², andE _c–0.49eV, _n=6.6×10^–16cm² are caused by one defect, for which the silicon di-selfinterstitial is a likely interpretation. A level atE _c }-0.11 eV was assigned to interstitial carbon. Both defects annealed out at about 170 °C. After 600 °C annealing an additional level atE _c–0.2 eV was detected, which was attributed to an interstitial silicon carbon complex. Heat treatment at 800 °C generated a new level atE _c–0.49 eV, _n=2.9×10^–16cm² only in the area of high A-swirl defect density. This level was also observed after oxidation and subsequent annealing of silicon.     

A Sensitive Fluorimetric Method for the Determination of Epinephrine

A sensitive fluorimetric method for the determination of epinephrine (E) is described in this paper. The experiments indicate that epinephrine can react with formaldehyde (HCHO) in an acid medium to form a condensation product, which can be oxidized by potassium hexacyanoferrate(III) (K₃[Fe(CN)₆]) in borax buffer (pH = 9.5). The reaction product can emit strong fluorescence. Ascorbic acid (AA) is used in order to consume excess potassium hexacyanoferrate and stabilize the fluorescent product. Under optimum conditions, a linear relationship has been obtained between the fluorescence intensity and the concentration of epinephrine in the range of 1.4×10^–9–2.1×10^–6 mol/l, and the detection limit is 2.4×10^–10 mol/l (4.3×10^–11 g/ml, S/N = 3). The method is applied for the determination of E in both actual sample and the synthetic sample with E and norepinephrine (NE) by using the coupling technique of synchronous fluorimetry and H-point standard addition method, and the results obtained are satisfactory.