Calculations of Lengths of Dislocation Combinations in FCC Crystals

In the present work, lengths of dislocation combinations formed as a result of interaction of reacting dislocations in noncoplanar glide systems are calculated. A new model is suggested in which the geometry of dislocation combination is considered for an arbitrary asymmetrical intersection of dislocation segments. The lengths of dislocation combinations are determined on the example of one dislocation reaction. The statistics of an arbitrary intersection of the reacting dislocations are considered for an arbitrary (from screw to edge) orientation of a glissile dislocation.     

The dislocations in graphene with the correction from lattice effect

The dislocation widths and Peierls stresses of glide dislocations and shuffle dislocations in graphene have been studied by the improved Peierls-Nabarro (P-N) equation which contains the discrete correction. The discrete parameter is obtained from a simple dynamic model in which the interaction attributed to the variation of bond length and angle was considered. The restoring force in the improved P-N equation is given by the gradient of the generalized stacking fault energy surface (γ-surface). Our calculation shows that the widths of the shuffle dislocation and the glide dislocation are narrow and the width of the shuffle dislocation is about twice wider than the glide dislocation. The Peierls stress of a shuffle dislocation is one order of magnitude smaller than that of a glide dislocation. As a consequence, the shuffle dislocation moves more easily than the glide dislocation.     

Simulation of the formation of a glide band

The initial stage in the development of a glide band in NaCl crystals is simulated. The process of double cross slip of segments of screw dislocations was examined according to the scheme proposed by Wiedersich. A quantitative estimate of the parameters characterizing the development of the glide band is made: structures and rate of expansion of the band, average slip distance of the dislocations, dislocation density, and others. The degree to which the different parameters affect the development of the glide band is established: ratio of the edge and screw dislocation velocities, as well as the lattice friction stress of dislocations.Translated from Izvestiya Vysshykh Uchebnykh Zavedenii, Fizika, No. 9, pp. 82–96, September, 1981.     

Transmission electron microscopy study of the interaction between a glide dislocation and a dislocation node

Using in-situ tensile straining in conjunction with stereo imaging in a transmission electron microscope, real-time observations have been made in thin copper foils of the interaction of glide dislocations with a dislocation node. A mechanism is observed by which a dislocation approaching the node effectively bypasses the node by exchanging segments with one of the dislocations constituting the node.     

Influence of collective effects on the dynamic behavior of a single edge dislocation in a crystal with point defects

The glide of a single edge dislocation in an elastic field of point defects randomly distributed over a crystal is investigated taking into account the influence of the phonon subsystem of the crystal. The force of retardation of the dislocation motion is calculated, and the velocities at which this force has a local maximum and a local minimum are determined. A comparative analysis of the glide of a single dislocation and the glide of a pair of edge dislocations is performed.     

The formation of dislocation networks

The formation of small angle boundaries consisting of dislocation networks is considered mainly on the basis of studies concerning the hot-deformation of Al-Mg alloys solidified with well developed sub-structures. It is shown that different kinds of network are built up on dislocation forests by dislocations which encounter the forest by glide and then change the mode of motion from glide to climb. Special attention is given to the mechanism of climb which enables the rapid knitting of networks during hot-deformation, and also to the annihilation of dislocations which prevents the increase in flow stress.     

Reaction of different types of attractive dislocations in alloys with long-range order

The strength of junctions is calculated arising from the reaction of attractive superdislocations of the primary glide system with a tree of the forest, and from the reaction of a single glide dislocation with a superdislocation of the secondary glide system. The calculated strength and stability of the junctions are compared with the strength and stability of junctions formed between attractive trees in fcc metals, and superdislocations in an LI₂ superstructure.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 108–113, May, 1976.     

A parametric simulation method for discrete dislocation dynamics

A new computer simulation method employed in discrete dislocation dynamics is presented. The article summarizes results of an application of the method to elementary interactions among glide dislocations and dipolar dislocation loops. The glide dislocations are represented by parametrically described curves moving in glide planes whereas the dipolar loops are treated as rigid objects. All mutual force interactions are considered in the models. As a consequence, the computational complexity rapidly increases with the number of objects considered. This difficulty is treated by advanced computational techniques such as suitable accurate numerical methods and parallel implementation of the algorithms. Therefore the method is able to simulate particular phenomena of dislocation dynamics which occur in crystalline solids deformed by single slip: generation of glide dislocations from the Frank-Read source, interaction of glide dislocations with obstacles, their encounters in channels of the bands, sweeping of dipolar loops by glide dislocations and a loop clustering.     

剪切应变下刃型位错的滑移机理的晶体相场模拟

针对刃型位错的滑移运动, 构建包含外力场与晶格原子密度耦合作用的体系自由能密度函数, 建立剪切应变作用体系的晶体相场模型. 模拟了双相双晶体系的位错攀移和滑移运动, 计算了位错滑移的Peierls势垒和滑移速度. 结果表明: 施加较大的剪切应变率作用, 体系能量变化为单调光滑曲线, 位错以恒定速度做连续运动, 具有刚性运动特征; 剪切应变率较小时, 体系能量变化出现周期波动特征, 位错运动是处于低速不连续运动状态, 运动出现周期“颠簸”式滑移运动, 具有黏滞运动特征; 位错启动运动, 存在临界的势垒. 位错启动攀移运动的Peierls势垒要比启动滑移Peierls势垒大几倍. 位错攀移和滑移运动特征与实验结果相符合.     

Character of the stressed state of fcc metal single crystal and the resistance to dislocation glide from secondary systems attracted by dislocations

Stresses in secondary glide systems are taken into account in calculations of the strength of dislocation combinations in an fcc crystal with deformation axis oriented in [010], [¯111], and [¯10¯1] directions. The coefficient characterizing the contribution of the reacting component of the dislocation forest to the yield stress is studied as a function of the dislocation densityp.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 48–54, November, 1978.     

Dislocation dynamics in multiwalled carbon nanotubes at high temperatures

Dislocation dynamics dictate the mechanical behavior of materials. Dislocations in periodic crystalline materials have been well documented. On the contrary, dislocations in cylindrical carbon nanotubes, particularly in multiwalled carbon nanotubes (MWCNTs), remain almost unexplored. Here we report that a room temperature 1/2<0001> sessile dislocation in a MWCNT becomes highly mobile, as characterized by its glide, climb, and the glide-climb interactions, at temperatures of about 2000 degrees C. The dislocation glide leads to the cross-linking of different shells; dislocation climb creates nanocracks; and the interaction of two 1/2<0001> dislocations creates kinks. We found that dislocation loops act as channels for mass transport. These dislocation dynamics are drastically different from that in conventional periodic crystalline materials due to the cylindrical, highly anisotropic structures of MWCNTs.     

镍铬合金中的位错运动与位错反应

对镍铬合金中单一滑移面内和两个滑移面间的位错反应,特别是动态下的反应,进行了透射电子显微镜观察,并对其中的一些位错组态进行了衍衬分析。1.六角位错网络主要是单一滑移面内柏氏矢量相差120°的两组位错间反应的结果;2.与螺型位错一样,刃型或混合型位错也能在两个滑移面间交滑移;3.两个滑移面间的位错反应有时在其截线方向生成不滑动的位错(如L.C.位错锁)并不能完全阻挡住这两个滑移面上的位错运动;4.在含铝、钛的镍铬合金中,超点阵位错的反应与不含铝、钛的合金或无序固溶体中的位错反应相似。 关键词：     

Effect of H impurity on misfit dislocation in Ni-based single-crystal superalloy: molecular dynamic simulations

The effect of H impurity on the misfit dislocation in Ni-based single-crystal superalloy is investigated using the molecular dynamic simulation. It includes the site preferences of H impurity in single crystals Ni and Ni₃Al, the interaction between H impurity and the misfit dislocation and the effect of H impurity on the moving misfit dislocation. The calculated energies and simulation results show that the misfit dislocation attracts H impurity which is located at the γ/γ' interface and Ni₃Al and H impurity on the glide plane can obstruct the glide of misfit dislocation, which is beneficial to improving the mechanical properties of Ni based superalloys.     

A computational approach towards modelling dislocation transmission across phase boundaries

To study the nanoscopic interaction between edge dislocations and a phase boundary within a two-phase microstructure the effect of the phase contrast on the internal stress field due to the dislocations needs to be taken into account. For this purpose a 2D semi-discrete model is proposed in this paper. It consists of two distinct phases, each with its specific material properties, separated by a fully coherent and non-damaging phase boundary. Each phase is modelled as a continuum enriched with a Peierls–Nabarro (PN) dislocation region, confining dislocation motion to a discrete plane, the glide plane. In this paper, a single glide plane perpendicular to and continuous across the phase boundary is considered. Along the glide plane bulk induced shear tractions are balanced by glide plane shear tractions based on the classical PN model. The model's ability to capture dislocation obstruction at phase boundaries, dislocation pile-ups and dislocation transmission is studied. Results show that the phase contrast in material properties (e.g. elastic stiffness, glide plane properties) alone creates a barrier to the motion of dislocations from a soft to a hard phase. The proposed model accounts for the interplay between dislocations, external boundaries and phase boundary and thus represents a suitable tool for studying edge dislocation–phase boundary interaction in two-phase microstructures.     

Slip band formation and mobile dislocation density generation in high rate deformation of single fcc crystals

The mechanisms for the nucleation, thickening, and growth of crystallographic slip bands from the sub-nanoscale to the microscale are studied using three-dimensional dislocation dynamics. In the simulations, a single fcc crystal is strained along the [111] direction at three different high strain rates: 10⁴, 10⁵, and 10⁶?s^??1. Dislocation inertia and drag are included and the simulations were conducted with and without cross-slip. With cross-slip, slip bands form parallel to active (111) planes as a result of double cross-slip onto fresh glide planes within localized regions of the crystal. In this manner, fine nanoscale slip bands nucleate throughout the crystal, and, with further straining, build up to larger bands by a proposed self-replicating mechanism. It is shown that slip bands are regions of concentrated glide, high dislocation multiplication rates, and high dislocation velocities. Cross-slip increases in activity proportionally with the product of the total dislocation density and the square root of the applied stress. Effects of cross-slip on work hardening are attributed to the role of cross-slip on mobile dislocation generation, rather than slip band formation. A new dislocation density evolution law is presented for high rates, which introduces the mobile density, a state variable that is missing in most constitutive laws.     

A model for the dynamics of loop drag by a gliding dislocation

Clusters of self-interstitial atoms are formed in metals by high-energy displacement cascades, often in the form of small dislocation loops with a perfect Burgers vector. In isolation, they are able to undergo fast, thermally activated glide in the direction of their Burgers vector, but do not move in response to a uniform stress field. The present work considers their ability to glide under the influence of the stress of a gliding dislocation. If loops can be dragged by a dislocation, it would have consequences for the effective cross-section for dislocation interaction with other defects near its glide plane. The lattice resistance to loop drag cannot be simulated accurately by the elasticity theory of dislocations, so here it is investigated in iron and copper by atomic-scale computer simulation. It is shown that a row of loops lying within a few nanometres of the dislocation slip plane can be dragged at very high speed. The drag coefficient associated with this process has been determined as a function of metal, temperature and loop size and spacing. A model for loop drag, based on the diffusivity of interstitial loops, is presented. It is tested against data obtained for the effects of drag on the stress to move a dislocation and the conditions under which a dislocation breaks away from a row of loops.     

Probing the structure and energetics of dislocation cores in SiGe alloys through Monte Carlo simulations

We present a methodology for the investigation of dislocation energetics in segregated alloys based on Monte Carlo simulations which equilibrate the topology and composition of the dislocation core and its surroundings. An environment-dependent partitioning of the system total energy into atomic contributions allows us to link the atomistic picture to continuum elasticity theory. The method is applied to extract core energies and radii of 60 degrees glide dislocations in segregated SiGe alloys which are inaccessible by other methods.     

Quasidislocation stoneley wave and Eshelby dislocation Scholte wave

A quasidislocation (a dislocationlike entity described here for the first time) moves at the speed of a Stoneley surface wave that travels at the interface between two different elastic solids. An Eshelby glide edge dislocation moves at the speed of a Scholte surface wave that travels at the interface between a solid and an ideal liquid. The quasidislocation and the glide edge dislocation (that moves at the Eshelby velocity) are the Green's functions of their waves. Scholte waves are planar distributions of transonic moving glide edge dislocations. They are not Stoneley waves, although often called by that name, because Stoneley waves are planar distributions of subsonic moving quasidislocations.     

A dislocation dynamics study of the strength of stacking fault tetrahedra. Part I: interactions with screw dislocations

We present a comprehensive dislocation dynamics (DD) study of the strength of stacking fault tetrahedra (SFT) to screw dislocation glide in fcc Cu. Our methodology explicitly accounts for partial dislocation reactions in fcc crystals, which allows us to provide more detailed insights into the dislocation–SFT processes than previous DD studies. The resistance due to stacking fault surfaces to dislocation cutting has been computed using atomistic simulations and added in the form of a point stress to our DD methodology. We obtain a value of 1658.9 MPa, which translates into an extra force resolved on the glide plane that dislocations must overcome before they can penetrate SFTs. In fact, we see they do not, leading to two well differentiated regimes: (i) partial dislocation reactions, resulting in partial SFT damage, and (ii) impenetrable SFT resulting in the creation of Orowan loops. We obtain SFT strength maps as a function of dislocation glide plane-SFT intersection height, interaction orientation, and dislocation line length. In general SFTs are weaker obstacles the smaller the encountered triangular area is, which has allowed us to derive simple scaling laws with the slipped area as the only variable. These laws suffice to explain all strength curves and are used to derive a simple model of dislocation–SFT strength. The stresses required to break through obstacles in the 2.5–4.8-nm size range have been computed to be 100–300 MPa, in good agreement with some experimental estimations and molecular dynamics calculations.