Mechanism of the hydrosilylation reaction of alkenes at porous silicon: experimental and computational deuterium labeling studies

The mechanism of the formation of Si-C bonded monolayers on silicon by reaction of 1-alkenes with hydrogen-terminated porous silicon surfaces has been studied by both experimental and computational means. We propose that monolayer formation occurs via the same radical chain process as at single-crystal surfaces: a silyl radical attacks the 1-alkene to form both the Si-C bond and a radical center on the beta-carbon atom. This carbon radical may then abstract a hydrogen atom from a neighboring Si-H bond to propagate the chain. Highly deuterated porous silicon and FTIR spectroscopy were used to provide evidence for this mechanism by identifying the IR bands associated with the C-D bond formed in the proposed propagation step. Deuterated porous silicon surfaces formed by galvanostatic etching in 48% DF/D2O:EtOD (1:1) electrolytes showed a 30% greater density of Si-D sites on the surface than Si-H sites on hydrogen-terminated porous silicon surfaces prepared in the equivalent H-electrolyte. The thermal reaction of undec-1-ene and the Lewis acid catalyzed reaction of styrene on a deuterated surface both resulted in alkylated surfaces with the same C-C and C-H vibrational features as formed in the corresponding reactions at a hydrogen-terminated surface. However, a broad band around 2100 cm(-1) was observed upon alkylating the deuterated surfaces. Ab initio and density functional theory calculations on small molecule models showed that the integrated absorbance of this band was comparable to the intensity expected for the C-D stretches predicted by the chain mechanism. The calculations also indicate that there is substantial interaction between the hydrogen atoms on the beta-carbons and the hydrogen atoms on the Si(111)-H surface. These broad 2100 cm(-1) features are therefore assigned to C-D bands arising from the involvement of surface D atoms in the hydrosilylation reactions, while the line broadening can be explained partly by interaction with neighboring surface atoms/groups.     

Mimicking the silicon surface: reactivity of silyl radical cations toward nucleophiles

Radical cations of selected low molecular-weight silicon model compounds were obtained by photoinduced electron transfer. These radical cations react readily with a variety of nucleophiles, regularly used in monolayer fabrication onto hydrogen-terminated silicon. From time-resolved kinetics, it was concluded that the reactions proceed via a bimolecular nucleophilic attack to the radical cation. A secondary kinetic isotope effect indicated that the central Si-H bond is not cleaved in the rate-determining step. Apart from substitution products, also hydrosilylation products were identified in the product mixtures. Observation of the substitution products, combined with the kinetic data, point to an bimolecular reaction mechanism involving Si-Si bond cleavage. The products of this nucleophilic substitution can initiate radical chain reactions leading to hydrosilylation products, which can independently also be initiated by dissociation of the radical cations. Application of these data to the attachment of organic monolayers onto hydrogen-terminated Si surfaces via hydrosilylation leads to the conclusion that the delocalized Si radical cation (a surface-localized hole) can initiate the hydrosilylation chain reaction at the Si surface. Comparison to monolayer experiments shows that this reaction only plays a significant role in the initiation, and not in the propagation steps of Si-C bond making monolayer formation.     

Toward a mechanistic understanding of exciton-mediated hydrosilylation on nanocrystalline silicon

White-light initiated hydrosilylation of nanocrystalline porous silicon was found to be far more efficient (in terms of both kinetics and yield) in the presence of electron-accepting molecules with suitably high reduction potentials, particularly halocarbons. It is known that absorption of visible light by nanocrystalline silicon results in the formation of excitons (electron/hole pairs) and that this exciton can be harnessed to drive a hydrosilylation reaction with an alkene; the Si-C bond forms as a result of attack of the π-electrons of the alkene on the positively charged holes. In order to better understand the white-light initiated mechanism through which this reaction takes place, and to compare with UV-mediated photoemission on Si(111)-H, a series of electron acceptors were screened for their effect on surface alkene hydrosilylation. A very strong correlation between reduction potentials (E(red)) of the oxidant and reaction efficiency was observed, with a minimum "turn-on" E(red) required for an increase to take place. The oxidant appears to accept, or remove, the electron from the nanocrystallite-bound exciton, favoring attack by the alkene on the positively charged Si nanocrystallite, leading to Si-C bond formation. Radical reactions were discounted for a number of reasons, including lack of effect of radical traps, no apparent Si-Cl bond formation, lack of oxidation of the surfaces, and others. Unlike with other oxidants such as nitro-aromatics, halocarbons do not cause additional surface reactions and promote very clean, fast, and selective hydrosilylation chemistry.     

Decomposition of hexamethyldisilane on a hot tungsten filament and gas-phase reactions in a hot-wire chemical vapor deposition reactor

To study the effect of an Si-Si bond on gas-phase reaction chemistry in the hot-wire chemical vapor deposition (HWCVD) process with a single source alkylsilane molecule, soft ionization with a vacuum ultraviolet wavelength of 118 nm was used with time-of-flight mass spectrometry to examine the products from the primary decomposition of hexamethyldisilane (HMDS) on a heated tungsten (W) filament and from secondary gas-phase reactions in a HWCVD reactor. It is found that both Si-Si and Si-C bonds break when HMDS decomposes on the W filament. The dominance of the breakage of Si-Si over Si-C bond has been demonstrated. In the reactor, the abstraction of methyl and H atom, respectively, from the abundant HMDS molecules by the dominant primary trimethylsilyl radicals produces tetramethylsilane (TMS) and trimethylsilane (TriMS). Along with TMS and TriMS, various other alkyl-substituted silanes (m/z = 160, 204, 262) and silyl-substituted alkanes (m/z = 218, 276, 290) are also formed from radical combination reactions. With HMDS, an increasing number of Si-Si bonds are found in the gas-phase reaction products aside from the Si-C bond which has been shown to be the major bond connection in the products when TMS is used in the same reactor. Three methyl-substituted 1,3-disilacyclobutane species (m/z = 116, 130, 144) are present in the reactor with HMDS, suggesting a more active involvement from the reactive silene intermediates.     

Mechanisms for NH3 decomposition on Si(100)-(2 x 1) surface: a quantum chemical cluster model study

In this paper, we present a detailed mechanism for the complete decomposition of NH3 to NHx(a) (x = 0-2). Our calculations show that the initial decomposition of NH3 to NH2(a) and H(a) is facile, with a transition-state energy 7.4 kcal mol-1 below the vacuum level. Further decomposition to N(a) or recombination-desorption to NH3(g) is hindered by a large barrier of approximately 46 kcal mol-1. There are two plausible NH2 decomposition pathways: 1) NH2(a) insertion into the surface Si-Si dimer bond, and 2) NH2(a) insertion into the Si-Si backbond. We find that pathway (1) leads to the formation of a surface Si = N unit, similar to a terminal Si = Nt pair in silicon nitride, Si3N4, while pathway (2) leads to the formation of a near-planar, subsurface Si3N unit, in analogy to a central nitrogen atom (Nc) bounded to three silicon atoms in the Si3N4 environment. Based on these results, a plausible microscopic mechanism for the nitridation of the Si(100)-(2 x 1) surface by NH3 is proposed.     

Formation of a tetra-sigma-bonded intermediate in acetylethyne binding on Si(100)-2 x 1

The covalent binding of acetylethyne on Si(100)-2 x 1 has been investigated using high-resolution electron energy loss spectroscopy (HREELS) and X-ray photoelectron spectroscopy (XPS). The HREELS spectra of chemisorbed monolayers show the absence of the C=O, C[triple bond]C, and C(sp)-H stretching modes coupled with the appearance of C=C (at 1580 cm(-1)) and C(sp2)-H (at 3067 cm(-1)) stretching modes. This demonstrates that both of the C=O and CC groups of acetylethyne directly participate in binding with silicon surfaces to form C-O and C=C bonds, respectively, which is further confirmed by the XPS studies. A tetra-sigma-binding configuration through two [2 + 2]-like cycloaddition reactions in acetylethyne binding on Si(100) is proposed to account for the experimental observation. The cycloadduct containing a C=C double bond may be employed as an intermediate for further in situ chemical syntheses of multilayer organic thin films or surface functionalization.     

First-principles theoretical analysis of silyl radical diffusion on silicon surfaces

We report results from a detailed analysis of the fundamental radical precursor diffusion processes on silicon surfaces and discuss their implications for the surface smoothness of hydrogenated amorphous silicon (a-Si:H) thin films. The analysis is based on a synergistic combination of first-principles density functional theory (DFT) calculations of SiH(3) radical migration on the hydrogen-terminated Si(001)-(2 x 1) surface with molecular-dynamics (MD) simulations of SiH(3) radical precursor migration on surfaces of a-Si:H films. Our DFT calculations yield activation energies for SiH(3) migration that range from 0.18 to 0.89 eV depending on the local electronic environment on the Si(001)-(2 x 1):H surface. In particular, when no substantial surface relaxation (Si-Si bond breaking or formation) accompanies the hopping of the SiH(3) radical the activation barriers are highest, whereas hopping between nearest-neighbor overcoordinated surface Si atoms results in the lowest radical diffusion barrier of 0.18 eV; this low barrier is consistent with the activation barrier for SiH(3) migration through overcoordinated sites on the a-Si:H surface. Specifically, the analysis of the MD simulations of SiH(3) radical migration on a-Si:H surfaces yields an effective diffusion barrier of 0.16 eV, allowing for the rapid migration of the SiH(3) radical prior to its incorporation in surface valleys; rapid migration and subsequent incorporation constitute the two-step mechanism responsible for the smoothness of plasma deposited a-Si:H thin films.     

Cleavage of the C-Si bond in Trifluoro(phenyl)silane with Aliphatic Alcohols

Trifluoro(phenyl)silane reacts with aliphatic alcohols under reflux. The reaction involves not only Si-F bond cleavage to form ethoxyfluoro(phenyl)silanes, but also C-Si bond cleavage to form benzene and alkoxyfluoro- and tetraalkoxysilanes. The formation of the latter products was proved by ¹⁹F and ²⁹Si NMR spectroscopy and also by model disproportionation reactions of trifluoro(phenyl)silane with trimethoxy-(phenyl)-, tetramethoxy-, or tetraethoxysilanes.     

Dehydrative cyclocondensation reactions on hydrogen-terminated Si(100) and Si(111): an ex situ tool for the modification of semiconductor surfaces

Dehydrative cyclocondensation processes for semiconductor surface modification can be generally suggested on the basis of well-known condensation schemes; however, in practice this approach for organic functionalization of semiconductors has never been investigated. Here we report the modification of hydrogen-terminated silicon surfaces by cyclocondensation. The cyclocondensation reactions of nitrobenzene with hydrogen-terminated Si(100) and Si(111) surfaces are investigated and paralleled with selected cycloaddition reactions of nitro- and nitrosobenzene with Si(100)-2x1. Infrared spectroscopy is used to confirm the reactions and verify an intact phenyl ring and C-N bond in the reaction products as well as the depletion of surface hydrogen. High resolution N 1s X-ray photoelectron spectroscopy (XPS) suggests that the major product for both cyclocondensation reactions investigated is a nitrosobenzene adduct that can only be formed following water elimination. Both IR and XPS are augmented by density functional theory (DFT) calculations that are also used to investigate the feasibility of several surface reaction pathways, which are insightful in understanding the relative distribution of products found experimentally. This novel surface modification approach will be generally applicable for semiconductor functionalization in a highly selective and easily controlled manner.     

Formation of organic monolayers on silicon via gas-phase photochemical reactions

A new method for the formation of molecular monolayers on silicon surfaces utilizing gas-phase photochemical reactions is reported. Hydrogen-terminated Si(111) surfaces were exposed to various gas-phase molecules (hexene, benzaldehyde, and allylamine) and irradiated with ultraviolet light from a mercury lamp. The surfaces were studied with in situ Fourier transform infrared spectroscopy, high-resolution electron energy loss spectroscopy, and scanning tunneling microscopy. The generation of gas-phase radicals was found to be the initiator for organic monolayer formation via the abstraction of hydrogen from the H/Si(111) surface. Monolayer growth can occur through either a radical chain reaction mechanism or through direct radical attachment to the silicon dangling bonds.     

硅杂四元环化合物的合成和反应

硅杂四元环化合物在有机硅化学中是一类非常重要的小分子环系化合物, 广泛应用于有机化学、金属有机化学以及材料化学. 环上只含有一个硅原子的硅杂环丁烷可以通过γ-卤代丙基硅烷的Grignard反应、Si＝C键与烯烃的 [2＋2]环加成反应以及硅杂环丙烷的扩环反应合成, 环上只含有一个硅原子的硅杂环丁烯可以通过格氏试剂或锂试剂参与的Si—C键的关环反应、硅杂环丁烷的转化反应、硅卡宾对C—H键的插入反应、Si＝C键与炔烃的[2＋2]环加成反应以及二炔基硅烷的分子内成环反应等途径合成. 硅杂环丁烷和硅杂环丁烯由于存在环张力和具有一定的Lewis酸性, 能够通过扩环反应生成五元和六元含硅杂环化合物, 也能够通过开环反应生成不同结构的有机硅分子和聚合物, 抑或实现有机反应在温和条件下的转化.     

Highly stable organic monolayers for reacting silicon with further functionalities: the effect of the C-C bond nearest the silicon surface

Crystalline Si(111) surfaces have been alkylated in a two-step chlorination/alkylation process using various organic molecules having similar backbones but differing in their C-C bond closest to the silicon surface (i.e., C-C vs C=C vs C[triple bond]C bonds). X-ray photoelectron spectroscopic (XPS) data show that functionalization of silicon surfaces with propenyl magnesium bromide (CH3-CH=CH-MgBr) organic molecules gives nearly full coverage of the silicon atop sites, as on methyl- and propynyl-terminated silicon surfaces. Propenyl-terminated silicon surface shows less surface oxidation and is more robust against solvent attacks when compared to methyl- and propynyl-terminated silicon surfaces. We also show a secondary functionalization process of propenyl-terminated silicon surface with 4'-[3-Trifluoromethyl-3H-diazirin-3-yl]-benzoic acid N-hydroxysuccinimide ester [TDBA-OSu] cross-linker. The Si-CH=CH-CH3 surfaces thus offer a means of attaching a variety of chemical moieties to a silicon surface through a short linking group, enabling applications in molecular electronics, energy conversion, catalysis, and sensing.     

Mechanisms and energetics of hydride dissociation reactions on surfaces of plasma-deposited silicon thin films

We report results from a detailed analysis of the fundamental silicon hydride dissociation processes on silicon surfaces and discuss their implications for the surface chemical composition of plasma-deposited hydrogenated amorphous silicon (a-Si:H) thin films. The analysis is based on a synergistic combination of first-principles density functional theory (DFT) calculations of hydride dissociation on the hydrogen-terminated Si(001)-(2x1) surface and molecular-dynamics (MD) simulations of adsorbed SiH(3) radical precursor dissociation on surfaces of MD-grown a-Si:H films. Our DFT calculations reveal that, in the presence of fivefold coordinated surface Si atoms, surface trihydride species dissociate sequentially to form surface dihydrides and surface monohydrides via thermally activated pathways with reaction barriers of 0.40-0.55 eV. The presence of dangling bonds (DBs) results in lowering the activation barrier for hydride dissociation to 0.15-0.20 eV, but such DB-mediated reactions are infrequent. Our MD simulations on a-Si:H film growth surfaces indicate that surface hydride dissociation reactions are predominantly mediated by fivefold coordinated surface Si atoms, with resulting activation barriers of 0.35-0.50 eV. The results are consistent with experimental measurements of a-Si:H film surface composition using in situ attenuated total reflection Fourier transform infrared spectroscopy, which indicate that the a-Si:H surface is predominantly covered with the higher hydrides at low temperatures, while the surface monohydride, SiH((s)), becomes increasingly more dominant as the temperature is increased.     

Vibrational characterization of different benzene phases on flat and vicinal Si(100) surfaces

Based on high-resolution electron energy loss spectroscopy and temperature-programmable desorption, benzene chemisorption on vicinal and nominally flat Si(100) surfaces has been studied for various adsorption, annealing, and site blocking treatments. Three different chemisorbed benzene (C6H6 and C6D6) phases with distinct thermal desorption characteristics and different vibrational spectra have been separated and characterized on both substrates. All three phases are identified as 1,4-cyclohexadiene-like structures with butterfly geometry. Whereas the dominant phase is di-sigma bonded to the two Si atoms of a single Si-Si dimer, the benzene orientation (double bond orientation) in the other phases is rotated. Di-sigma bonding to Si atoms of adjacent Si-Si dimer for the latter cases is most likely. Coverage and temperature dependent conversions between the different phases have been addressed by vibrational spectroscopy.     

Semiconductor surface-induced 1,3-hydrogen shift: the role of covalent vs zwitterionic character

X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR) are used to compare the reaction of 1,2-cyclohexanedione (1,2-CHD) with Si(001) and diamond(001) surface dimers under ultra-high-vacuum conditions. 1,2-CHD is known to undergo a keto-enol tautomerization, with the monoenol being the primary equilibrium species in the solid and gas phases. XPS and FTIR data demonstrate that 1,2-CHD reacts with diamond(001) through the OH group of the monoenol, resulting in only one O atom being bonded to the surface. In contrast, XPS and FTIR data suggest that both oxygen atoms in the 1,2-CHD molecule bond via Si-O-C linkages to the Si(001) surface dimer, and that the molecule undergoes an intramolecular 1,3-H shift. While the Si(001) and diamond(001) surfaces are both comprised of surface dimers, the diamond(001) dimer is symmetric, with little charge separation, whereas the Si(001) dimer is tilted and exhibits zwitterionic character. The different reaction products that are observed when clean Si(001) and diamond(001) surfaces are exposed to 1,2-CHD demonstrate the importance of charge separation in promoting a 1,3-H shift and provide new mechanistic insights that may be applicable to a variety of organic reactions.     

Silicon surfaces as electron acceptors: dative bonding of amines with Si(001) and Si(111) surfaces.

The bonding of the trimethylamine (TMA) and dimethylamine (DMA) with crystalline silicon surfaces has been investigated using X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy, and density-functional computational methods. XPS spectra show that TMA forms stable dative-bonded adducts on both Si(001) and Si(111) surfaces that are characterized by very high N(1s) binding energies of 402.2 eV on Si(001) and 402.4 eV on Si(111). The highly ionic nature of these adducts is further evidenced by comparison with other charge-transfer complexes and through computational chemistry studies. The ability to form these highly ionic charge-transfer complexes between TMA and silicon surfaces stems from the ability to delocalize the donated electron density between different types of chemically distinct atoms within the surface unit cells. Corresponding studies of DMA on Si(001) show only dissociative adsorption via cleavage of the N-H bond. These results show that the unique geometric structures present on silicon surfaces permit silicon atoms to act as excellent electron acceptors.     

Formation of tetra(ethylene oxide) terminated Si-C linked monolayers and their derivatization with glycine: an example of a generic strategy for the immobilization of biomolecules on silicon

Surface modification with oligo(ethylene oxide) functionalized monolayers terminated with reactive headgroups constitutes a powerful strategy to provide specific coupling of biomolecules with simultaneous protection from nonspecific adsorption on surfaces for the preparation of biorecognition interfaces. To date, oligo(ethylene oxide) functionalized monolayer-forming molecules which can be activated for attachment of biomolecules but which can selectively form monolayers onto hydrogen terminated silicon have yet to be developed. Here, self-assembled monolayers (SAMs) containing tetra(ethylene oxide) moieties protected with tert-butyl dimethylsilyl groups were formed by thermal hydrosilylation of alkenes with single-crystal Si(111)-H. The protection group was used to avoid side reactions with the hydride terminated silicon surface. Monolayer formation was carried out using solutions of the alkene in the high-boiling-point solvent 1,3,5-triethylbenzene. The protecting group was removed under very mild acidic conditions to yield a free hydroxyl functionality, a convenient surface moiety for coupling of biological entities via carbamate bond formation. The chemical composition and structure of the monolayers before and after deprotection were characterized by X-ray photoelectron spectroscopy (XPS) and X-ray reflectometry. To demonstrate the utility of this surface for covalent modification, two reagents were compared and contrasted for their ability to activate the surface hydroxyl groups for coupling of free amines, carbonyl diimidazole (CDI), and disuccinimidyl carbonate (DSC). Analysis of XP spectra before and after activation by CDI or DSC, and after subsequent reaction with glycine, provided quantitative information on the extent of activation and overall coupling efficiencies. CDI activated surfaces gave poor coupling yields under various conditions, whereas DSC mediated activation followed by aminolysis at neutral pH was found to be an efficient method for the immobilization of amines on tetra(ethylene oxide) modified surfaces.     

Reaction of hexylsilane with N-substituted allylamine and allyl chloride

Reactions of allyldiethylamine and allylbis(trimethylsiyl)amine with hexylsilane are studied. The former reaction involves hydrogen evolution and Si-Si bond formation. The contribution of hydrosilylation is insignificant. Substituent exchange between the nitrogen and silicon atoms in the silane is found. In the reaction with allylbis(trimethylsilyl)amine, no evolution of hydrogen is observed, and hydrosilylation takes place. With allyl chloride, hydrosylilation, reduction, and Si-Si bond formation are observed. Quantumchemical calculations for the reactions with diethylallylamine and allylbis(trimethylsilyl)amine were carried out at the PM3, B3LYP/6-31G**, and B3LYP/LanL2DZ levels to show that these reactions all are thermodynamically allowed, and the difference in the behavior of the amines is explained by kinetic and conformational factors.     

Transport Processes at α‐Quartz–Water Interfaces: Insights from First‐Principles Molecular Dynamics Simulations

Car–Parrinello molecular dynamics (CP–MD) simulations are performed at high temperature and pressure to investigate chemical interactions and transport processes at the α‐quartz–water interface. The model system initially consists of a periodically repeated quartz slab with O‐terminated and Si‐terminated (1000) surfaces sandwiching a film of liquid water. At a temperature of 1000 K and a pressure of 0.3 GPa, dissociation of H₂O molecules into H⁺ and OH^? is observed at the Si‐terminated surface. The OH^? fragments immediately bind chemically to the Si‐terminated surface while Grotthus‐type proton diffusion through the water film leads to protonation of the O‐terminated surface. Eventually, both surfaces are fully hydroxylated and no further chemical reactions are observed. Due to the confinement between the two hydroxylated quartz surfaces, water diffusion is reduced by about one third in comparison to bulk water. Diffusion properties of dissolved SiO₂ present as Si(OH)₄ in the water film are also studied. We do not observe strong interactions between the hydroxylated quartz surfaces and the Si(OH)₄ molecule as would have been indicated by a substantial lowering of the Si(OH)₄ diffusion coefficient along the surface. No spontaneous dissolution of quartz is observed. To study the mechanism of dissolution, constrained CP–MD simulations are done. The associated free energy profile is calculated by thermodynamic integration along the reaction coordinate. Dissolution is a stepwise process in which two Si? O bonds are successively broken. Each bond breaking between a silicon atom at the surface and an oxygen atom belonging to the quartz lattice is accompanied by the formation of a new Si? O bond between the silicon atom and a water molecule. The latter loses a proton in the process which eventually leads to protonation of the oxygen atom in the cleaved quartz Si? O bond. The final solute species is Si(OH)₄.     

Photoionization dynamics of glycine adsorbed on a silicon cluster: "on-the-fly" simulations

Dynamics of glycine chemisorbed on the surface of a silicon cluster is studied for a process that involves single-photon ionization, followed by recombination with the electron after a selected time delay. The process is studied by "on-the-fly" molecular dynamics simulations, using the semiempirical parametric method number 3 (PM3) potential energy surface. The system is taken to be in the ground state prior to photoionization, and time delays from 5 to 50 fs before the recombination are considered. The time evolution is computed over 10 ps. The main findings are (1) the positive charge after ionization is initially mostly distributed on the silicon cluster. (2) After ionization the major structural changes are on the silicon cluster. These include Si-Si bond breaking and formation and hydrogen transfer between different silicon atoms. (3) The transient ionization event gives rise to dynamical behavior that depends sensitively on the ion state lifetime. Subsequent to 45 fs evolution in the charged state, the glycine molecule starts to rotate on the silicon cluster. Implications of the results to various processes that are induced by transient transition to a charged state are discussed. These include inelastic tunneling in molecular devices, photochemistry on conducting surfaces, and electron-molecule scattering.