首页 | 本学科首页   官方微博 | 高级检索  
相似文献
 共查询到20条相似文献,搜索用时 15 毫秒
1.
Resonance relaxation displacements of dislocations in NaCl crystals placed in crossed static and alternating ultralow magnetic fields in the electron paramagnetic resonance scheme are discussed. The Earth’s magnetic field BEarth ≈ 50μT and other fields in the range of 26–261 μT are used as the static field. New strongly anisotropic properties of the effect have been revealed. Frequency spectra including numerous peaks of paths at low pump frequencies beginning with 10 kHz, as well as the quartet of equidistant peaks at high frequencies (~1.4 MHz at B=BEarth), have been measured. The effect is also observed in the pulsed pump field with a resonance duration of ~0.5 μs. Resonance changes have been detected in the microhardness of ZnO, triglycine sulfate, and potassium hydrogen phthalate crystals after their exposure in the Earth’s magnetic field in the same electron paramagnetic resonance scheme.  相似文献   

2.
Resonance relaxation displacements of dislocations in NaCl crystals exposed to crossed ultralow magnetic fields (static field B = 26–261 μT and radiofrequency field B ~ 3 μT) in the electron paramagnetic resonance scheme are studied. The effect is also observed in the magnetic field of the Earth when crossed with a pulsed pump field with a resonance duration of ~0.5 μs. Changes in the microhardness of crystals of ZnO, triglycine sulfate, and potassium hydrogen phthalate after their exposure to the magnetic field of the Earth and the orthogonally directed pump field are found out.  相似文献   

3.
We investigated the transport of pinned charge density waves (CDWs) that is observed in low dimensional materials. We treated pinned CDWs as moving CDWs that were confined within a typical quantum well amongst the many different types where pinning occurs at the barrier. We calculated the current flowing out of the quantum well by confined CDWs. The calculated conductivity is in good correspondence with experimental data in TTF–TCNQ, where the measured Fröhlich–Peierls temperature is 60 K much higher than the theoretical value of 20 K. The voltage dependence of the conductivity was calculated, where this is easily transformed into the dependence of electric field. The magnetic susceptibility was also calculated with a similar trend of experimental data. The susceptibility is a diamagnetic contribution by CDWs in addition to the constant background Pauli paramagnetic part.  相似文献   

4.
A comparative study of magnetoplasticity in two types of NaCl crystals differing in impurity content only by a small Ni addition (0.06 ppm) in one of them, NaCl(Ni), has been carried out. Two methods of sample magnetic exposure were used: in a constant field B = 0–0.6 T and in crossed fields in the EPR scheme—the Earth’s field BEarth (50 μT) and a variable pumping field \(\tilde B( \sim 1 \mu T)\) at frequencies ν ~ 1 MHz. In the experiments in the EPR scheme, the change of the field orientation from \(\tilde B \bot B_{Earth}\) to \(\left. {\tilde B} \right\|B_{Earth}\) led to almost complete suppression of the effect in the NaCl(Ni) crystals and reduced only slightly (approximately by 20%) the height of the resonance peak of dislocation mean paths in the crystals without Ni, with the amplitude of the mean paths in NaCl(Ni) in the orientation \(\tilde B \bot B_{Earth}\) having been appreciably lower than that in NaCl. In contrast, upon exposure to a constant magnetic field, a more intense effect was observed in the crystal with Ni. The threshold pumping field amplitude \(\tilde B\), below which the effect is absent under resonance conditions, for the NaCl(Ni) crystals turned out to be a factor of 5 smaller than that for NaCl, while the thresholds of a constant magnetic field coincide for both types of crystals. All these differences are discussed in detail and interpreted.  相似文献   

5.
A static magnetic field of up to 15 T is found to affect the photoluminescence excitation spectra of NaCl: Eu crystals. The magnetic field has an effect on the excitation spectra starting at the stage at which dimers are formed through diffusion in the crystals. At earlier stages of impurity aggregation, the magnetic field affects the kinetics of dimer accumulation. It is revealed that the dimer transformation stimulated by the magnetic field involves stages that last for 10–15 min at room temperature in a static magnetic field of 15 T and, hence, are shorter than the aggregation time. Luminescence studies of dimers, which are the main dislocation stoppers in NaCl: Eu crystals, make it possible to explain the specific features of the magnetoplastic effect observed previously in these crystals.  相似文献   

6.
It is found that the magnetoplastic effect in C60 single crystals in a pulsed magnetic field with induction larger than 10 T changes its sign in the vicinity of the phase transition at T c =250–260 K: crystal strengthening is observed for T<T c , and softening occurs for T>T c . This indicates a change in the crystal lattice structure in the magnetic field.  相似文献   

7.
Changes in the microhardness of ZnO, triglycine sulfate (TGS), and potassium acid phthalate (KAP) crystals after their exposure to crossed ultralow magnetic fields, i.e., the Earth’s field B Earth ≈ 50 μT and the alternating-current field \(\tilde B \approx 3 \mu {\rm T}\) orthogonal to it, have been revealed. In ZnO crystals, the microhardness increases, whereas in TGS and KAP, it decreases. A maximum change (10–15%) is reached within 1–3 h after magnetic treatment; then, the microhardness gradually recovers to its initial value for the first day. After a sufficient pause, the effect is completely reproduced under the same conditions. The resonant frequency of the pump field \(\tilde B\) corresponds to the EPR condition with a g-factor close to two. The magnetic memory exhibits a strong anisotropy: for each of the crystals, a direction is found, which, being coincident with the Earth’s magnetic field vector B Earth, causes complete or partial suppression of the effect. In ZnO and TGS crystals, these are symmetry axes 6 and 2, respectively. In the KAP crystal, it is the direction in the cleavage plane orthogonal the 2 axis. Possible physical mechanisms of the observed phenomena have been discussed.  相似文献   

8.
A compressible magnetohydrodynamics simulation of the reversed-field pinch is performed including anisotropic thermal conductivity. When the thermal conductivity is much larger in the direction parallel to the magnetic field than in the perpendicular direction, magnetic field lines become isothermal. As a consequence, as long as magnetic surfaces exist, a temperature distribution is observed displaying a hotter confined region, while an almost uniform temperature is produced when the magnetic field lines become chaotic. To include this effect in the numerical simulation, we use a multiple-time-scale analysis, which allows us to reproduce the effect of a large parallel thermal conductivity. The resulting temperature distribution is related to the existence of closed magnetic surfaces, as observed in experiments. The magnetic field is also affected by the presence of an anisotropic thermal conductivity.  相似文献   

9.
The Panagrellus redivivus bioassay, an established monitor of adverse toxic effects of different environments, has been used to study the biological effects of exposure to static and time-varying uniform and gradient magnetic fields, and to time-varying magnetic field gradients superimposed on a static uniform magnetic field of 2.35 Tesla. Temporally stationary magnetic fields have no effect on the fitness of the test animals. Time-varying magnetic fields cause some inhibition of growth and maturation in the test populations. The combination of pulsed magnetic field gradients in a static uniform magnetic field also has a small detrimental effect on the fitness of the test animals.  相似文献   

10.
微型计算机在脉冲磁场作用下的效应试验   总被引:5,自引:3,他引:5       下载免费PDF全文
 介绍了脉冲强磁场模拟器的工作原理, 将微型计算机置于脉冲磁场模拟器中,通过改变脉冲磁场的幅度和上升时间,研究脉冲磁场对微电子设备的干扰途径、干扰阈值与脉冲上升时间、脉冲宽度的关系。试验结果表明,微电子设备的连接电缆是脉冲磁场干扰引入的主要途径;简单的屏蔽措施对于脉冲磁场干扰有一定的抑制作用;脉冲磁场的时间变化率越大,对微电子设备的干扰作用越强。  相似文献   

11.
The radiation-induced conductivity of C60 single crystals is found to increase under the influence of a weak magnetic field (B < 1 T). It is shown that the observed effect is not related to the known galvanomagnetic phenomena. The results obtained are explained in terms of the proposed mechanisms of the influence of a weak magnetic field on the spin-dependent processes involving intermediate electron-hole pairs generated under radiation excitation of the fullerite single crystals.  相似文献   

12.
The effect of the type of conductivity and the doping level of InSb single crystals on the mobility of fast 60° dislocations in a magnetic field is discovered. It is found that doping of a pure InSb crystal with tellurium (n-type impurity) to 1018 cm?3 reduces the mobility of dislocations to the background level. At the same time, in p-type InSb crystals doped with Ge with the same carrier concentration (1018 cm?3), the magnetoplastic effect is manifested clearly. It is shown that preliminary mechanical loading and, hence, internal stresses in the crystal affect not only the mean path length of dislocations in a magnetic field but also the magnitude of the threshold magnetic field below which the magnetoplastic effect is not observed. Possible reasons for these phenomena are discussed.  相似文献   

13.
Hardening of ZnO single crystals is found to occur after their treatment in a constant magnetic field (B = 1–2 T). A maximum increase in the microhardness of the crystals is observed within 3–4 h after magnetic treatment. Then, the effect gradually decreases and the microhardness regains its initial value in 2–3 days. It is revealed that the sensitivity of the microhardness to a variation in the magnetic field has a threshold character: the effect appears at a magnetic induction higher than a critical value, rapidly increases in a narrow magnetic field range ΔB (~0.3 T), and then reaches saturation. It is shown that the magnitude of the effect depends on the orientation of the magnetic field with respect to the polar axis of symmetry of the crystal and is independent of the crystallographic orientation of the measurement plane. The maximum increase in the microhardness (~20%) is observed for all the (0001), (11\(\bar 2\)0), and (10\(\bar 1\)0) faces studied in the magnetic field B ∥ [10\(\bar 1\)0]. No change in the microhardness is found to occur in the magnetic field direction B ∥ [0001]. A physical model related to the spin-dependent variations in the impurity subsystem of the crystal in the magnetic field is proposed.  相似文献   

14.
The literature is contradictory regarding the effect of static magnetic fields on the function of the central nervous system of mammals. Since human subjects are exposed to intense static magnetic fields during magnetic resonance imaging, it is important to determine if the static magnetic field adversely affects the nervous system of man. Therefore, somato-sensory evoked potentials (SEPs) elicited from median nerve stimulation were measured in 11 normal subjects before and during short-term exposure to a 1.5 Tesla static magnetic field. Specially modified instrumentation was used to record SEPs that were unperturbed by the static magnetic field. There were no statistically significant differences in the N20 or P25 latencies or in the amplitude from N20 negative peak to P25 positive peak of the SEPs obtained before compared to those recorded during exposure to the static magnetic field. In addition, there were no changes in the waveforms associated with exposure to the static magnetic field. We conclude that short-term exposure to a 1.5 Tesla static magnetic field does not affect SEPs (i.e., nerve conduction and synaptic transmission were within normal limits) in normal human subjects.  相似文献   

15.
The intermartensitic transformation, in a two-step complete thermoelastic martensitic transformation in Ni53.2Mn22.6Ga24.2 single crystals, provides a much larger strain than that of the martensitic transformation. With a biasing magnetic field, the intermartensitic transformation strain is inhibited and the martensitic transformation strain is enhanced. Compressive stress–strain characteristics can be affected greatly by a static magnetic field. At low deformation temperature, the irreversible transformation strain induced by the stress becomes reversible, when a static magnetic field is applied. Further, the magnitude of the stress necessary for rearrangement of martensitic variants is dependent on the direction of the biasing magnetic field. Moreover, a well-defined character of the twin-boundary motion, similar to the soliton motion, has been observed upon loading or unloading.  相似文献   

16.
空间环境地面模拟装置是哈尔滨工业大学承建的国家重大科技基础设施项目,其包含的空间等离子体环境模拟与研究系统是用于提供磁重联过程等基本物理过程的时空演化规律研究的平台。在研究地球磁尾三维磁重联时,使用处于真空环境内的偶极磁场线圈和两个磁镜场线圈来提供研究所需的模拟背景磁场,其中偶极场线圈为一个总电感为17.4 mH、总电阻为30.25 mΩ的单个线圈,而磁镜场线圈为两个线圈镜像对称设置并串联连接,总电感30.16 mH,总电阻58.81 mΩ。为了产生实验所需背景磁场的幅值和持续时间,研制并测试了两套总能量3.36 MJ的脉冲电源,在进行地球磁尾三维磁重联实验时两套电源需要同时工作。用于驱动偶极场线圈的脉冲电源按照实验需求可以在充电压不大于20 kV的情况下,能够提供超过9 kA的峰值电流,95%峰值电流的持续时间超过了5 ms,由峰值时刻降低到10%峰值时刻的时间不超过130 ms;用于驱动磁镜场线圈的脉冲电源按照实验需求可以在充电压不大于20 kV的情况下,能够提供超过8 kA峰的值电流,95%峰值电流的持续时间超过了5 ms,由峰值时刻降低到10%峰值时刻的时间不超过130 ms。  相似文献   

17.
The anomalous magnetocaloric effect in singlet rare-earth paramagnets near energy level crossing has been experimentally observed for the first time. The magnetization and differential magnetic susceptibility of Ho1 ? x Y x VO4 crystals (x = 0, 0.5) measured along the tetragonal axis in a pulsed magnetic field with various change rates near the crossover field, dH/dt, from 3 × 103 to 2.5 × 102 T/s are compared to the data in static magnetic fields down to 0.1 K. These data indicate the large negative magnetocaloric effect in the pulsed magnetic field, so that the crystal with the initial temperature T 0 = 4.2 K is cooled much lower than 1 K. The experimental data are qualitatively described in the crystal field model with various interactions including hyperfine interactions and with the known interaction parameters.  相似文献   

18.
Hall effects of electrons can be produced by an external magnetic field, spin–orbit coupling or a topologically non-trivial spin texture. The topological Hall effect (THE) – caused by the latter – is commonly observed in magnetic skyrmion crystals. Here, we show analogies of the THE to the conventional Hall effect (HE), the anomalous Hall effect (AHE), and the spin Hall effect (SHE). In the limit of strong coupling between conduction electron spins and the local magnetic texture the THE can be described by means of a fictitious, “emergent” magnetic field. In this sense the THE can be mapped onto the HE caused by an external magnetic field. Due to complete alignment of electron spin and magnetic texture, the transverse charge conductivity is linked to a transverse spin conductivity. They are disconnected for weak coupling of electron spin and magnetic texture; the THE is then related to the AHE. The topological equivalent to the SHE can be found in antiferromagnetic skyrmion crystals. We substantiate our claims by calculations of the edge states for a finite sample. These states reveal in which situation the topological analogue to a quantized HE, quantized AHE, and quantized SHE can be found.  相似文献   

19.
The influence of a static magnetic field on the instability of plastic flow (the Portevin-Le Chatelier effect) is revealed in NaCl: Eu quenched crystals. It is found that, in an external magnetic field, the yield stress of the crystals is reduced, the probability of plastic strain jumps and their amplitude decrease, and the amplitude distribution of the plastic strain jumps becomes random. The number of shear bands formed on the surface of crystals strained in the magnetic field is halved as compared to that observed without a magnetic field.  相似文献   

20.
We have measured the Hall effect and the transverse magnetoresistance in NbSe3 single crystals. In the liquid helium temperature range we observed an absolute negative magnetoresistance (NMR) — the value of the resistance under magnetic field being much lower than that at zero field — in NbSe3 single crystals with a thickness less than 5 μm with the magnetic field oriented in the (b, c) plane. We show that this NMR effect is observed in the magnetic field range in which the Hall constant changes its sign. The results are qualitatively explained by the change of the surface scattering contribution to the magnetoconductance in the magnetic field range near the Hall voltage zero crossing.  相似文献   

设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号