Microstructures and impedance studies of Bi<Subscript>3.15</Subscript>Nd<Subscript>0.85</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> thin films

Microstructures and impedance characteristics of chemical-solution-derived Bi_3.15Nd_0.85Ti₃O₁₂ thin films were studied as functions of temperature. A dielectric anomaly was found at around 450°C, corresponding to the paraelectric to ferroelectric transition. Via complex impedance studies, grain and grain boundary contributions to the impedance were separated. The resistance of grain and grain boundaries is found governed by the same kind of space charge with an activation energy around 1.1 eV, close to that of oxygen vacancies in perovskite ferroelectrics. The low temperature ac conductance of BNdT thin films shows a frequency dispersion, which can also be ascribed to space charges mainly due to oxygen vacancies. The results were compared with SrBi₂Ta₂O₉ in terms of oxygen vacancy conductivity.     

Manifestation of a ferroelectric-antiferroelectric phase transition in Li<Subscript>0.12</Subscript>Na<Subscript>0.88</Subscript>Ta<Subscript>0.4</Subscript>Nb<Subscript>0.6</Subscript>O<Subscript>3</Subscript> in its Raman scattering spectra

The ferroelectric-antiferroelectric phase transition in the Li_0.12Na_0.88Ta_0.4Nb_0.6O₃ ceramic solid solution has been studied by the Raman scattering technique. As the temperature approached the transition point from below, we observed an appreciable broadening of the lines associated with the vibrations of the cations occupying octahedral and cubooctahedral cavities of the structure and with the oxygen network vibrations (which implies a substantial increase in disorder on the cation sublattices), as well as a decrease to zero intensity of the 875-cm^?1 line corresponding to stretch vibrations of the bridging oxygen in the BO₆ octahedral anion in the vicinity of the transition. The temperature dependence of the 875-cm_?1 line intensity near the transition was used to study the behavior of the phase transition order parameter η. The behavior of η was found to disagree markedly with the Landau theory of second-order phase transitions. It is shown that discrepancies originate from the increase in disorder in the niobium and tantalum sublattices in the Li_0.12Na_0.88Ta _y Nb_1-y O₃ solid solution system with increasing y. The order of the transition is lowered.     

Luminescence and scintillation properties of Y<Subscript>3</Subscript>A<Subscript>l5</Subscript>O<Subscript>12</Subscript>:Ce single crystals and single-crystal films

Luminescence and scintillation properties of Y₃A_l5O₁₂:Ce single crystals grown from the melt by the Czochralski and horizontal directed crystallization methods in various gas media and Y₃A_l5O₁₂:Ce single-crystal films grown by liquid-phase epitaxy from a melt solution based on a PbO-B₂O₃ flux have been comparatively analyzed. The strong dependence of scintillation properties of Y₃A_l5O₁₂:Ce single crystals on their growth conditions and concentrations of Y_Al antisite defects and vacancy defects has been established. Vacancy defects are involved in Ce³⁺ ion emission excitation as the centers of intrinsic UV luminescence and trapping centers. It has been shown that Y₃A_l5O₁₂:Ce single-crystal films are characterized by faster scintillation decay kinetics than single crystals and a lower content of slow components in Ce³⁺ ion luminescence decay during high-energy excitation due to the absence of Y_Al antisite defects in them and low concentration of vacancy defects. At the same time, the light yield of Y₃A_l5O₁₂:Ce single-crystal films is comparable to that of single crystals grown by directed crystallization due to the quenching effect of the Pb²⁺ ion impurity as a flux component and is slightly lower (∼25%) than the light yield of single crystals grown by the Czochralski method.     

Ordered monoclinic vanadium suboxide V<Subscript>14</Subscript>O<Subscript>6</Subscript>

The monoclinic (space group C2/m) superstructure of the suboxide V₁₄O₆, which is formed as a result of the atomic and vacancy ordering of the tetragonal solid solution of oxygen in vanadium, is investigated using X-ray diffraction and symmetry analysis. The monoclinic suboxide V₁₄O₆ is observed in the vanadium oxide samples VO_0.57, VO_0.81, and VO_0.86 synthesized at 1770 K and the samples VO _y (0.87 ≤ y ≤ 0.98) additionally annealed at 1470 K after the synthesis. It is established that the channel of the disorder-order phase transition associated with the formation of the monoclinic suboxide V₁₄O₆ includes six superstructure vectors belonging to three non-Lifshitz stars of one type {k ₁}. The distribution function of the oxygen atoms in the monoclinic superstructure of the suboxide V₁₄O₆ is calculated. It is demonstrated that the displacements of vanadium atoms distort the body-centered tetragonal metal sublattice, thus preparing the formation of the facecentered cubic sublattice and the transition from the suboxide V₁₄O₆ to the cubic vanadium monoxide with the B1 structure.     

The study of optical properties of amorphous thin films of mixed oxides In<Subscript>2</Subscript>O<Subscript>3</Subscript>—SnO<Subscript>2</Subscript> system,deposited by co-evaporation

A discussion of optical properties of mixed oxides In₂O₃—SnO₂ system is presented. Film thickness, substrate temperature, composition (in molar %) and annealing have a profound effect on the structure and optical properties of these films. Initially the increase in band gap with the increase of SnO₂ content in In₂O₃ is due to the increase in carrier density as a result of donor electrons from tin. The decrease in band gap above the critical Sn content is caused by the defects formed by Sn atoms, which act as carrier traps rather than electron donors. The increase in band gap with film thickness is caused by the increase in free carrier density which is generated by (i) Sn atom substitution of In atom, giving out one extra electron and (ii) oxygen vacancy acting as two electrons donor. The decrease in band gap with substrate temperature and annealing is due either to the severe deficiency of oxygen, which deteriorate the film properties and reduce the mobility of the carriers, or to the formation of indium species of lower oxidation state (In²⁺).     

Polarization processes in BaBi<Subscript>2</Subscript>Nb<Subscript>2</Subscript>O<Subscript>9</Subscript> and SrBi<Subscript>2</Subscript>Ta<Subscript>2</Subscript>O<Subscript>9</Subscript> ceramics in infralow-frequency fields

The dielectric nonlinearity in BaBi₂Nb₂O₉ and SrBi₂Ta₂O₉ layered ceramics was studied by measuring their polarization loops and reverse dependences of permittivity. It was shown that the features of the dielectric response of BaBi₂Nb₂O₉ and SrBi₂Ta₂O₉ in strong fields can be explained by glass-like properties and the contribution of the domain structure of the ferroelectric material to repolarization processes, respectively.     

Spin-wave resonances in Eu<Subscript>0.8</Subscript>Ce<Subscript>0.2</Subscript>Mn<Subscript>2</Subscript>O<Subscript>5</Subscript> and EuMn<Subscript>2</Subscript>O<Subscript>5</Subscript> multiferroics

Spin-wave resonances have been observed in superlattices arising due to the phase separation and self-organization of charge carriers in Eu_0.8Ce_0.2Mn₂O₅ single crystals. The resonances are found within the 5–80 K temperature range at frequencies close to 30 GHz. Similar resonances with intensities about an order of magnitude lower are also observed in EuMn₂O₅. The latter suggests the existence of charge transfer processes between the manganese ions of different valences in EuMn₂O₅.     

Lattice dynamics and ferroelectric instability in ordered and disordered PbSc<Subscript>1/2</Subscript>Ta<Subscript>1/2</Subscript>O<Subscript>3</Subscript> and PbSc<Subscript>1/2</Subscript>Nb<Subscript>1/2</Subscript>O<Subscript>3</Subscript> solid solutions

The dynamic Born charges and the frequency spectra of lattice oscillations in the crystals of ordered and disordered PbSc_1/2Ta_1/2O₃ (PST) and PbSc_1/2Nb_1/2O₃ (PSN) solid solutions have been calculated within the framework of the generalized Gordon-Kim model with allowance for the dipole and quadrupole polarizabilities. The phonon spectra of both compounds contain ferroelectric soft modes. The influence of various interactions on the magnitude of dynamic charges and ferroelectric instability in PSN and PST solid solutions has been studied and it is shown that both these charges and the ferroelectric instability are determined by the competition between long-range dipole-dipole interactions and short-range dipole-charge interactions, the determining role played by the interaction of Nb (Ta) cations and oxygen anions in the Nb-O (Ta-O) bond direction.     

Manifestation of a ferroelectric phase transition in Li<Subscript>0.12</Subscript>Na<Subscript>0.88</Subscript>Ta<Subscript>0.2</Subscript> Nb<Subscript>0.8</Subscript>O<Subscript>3</Subscript> in the Raman spectrum

The ferroelectric-antiferroelectric phase transition in a ceramic solid solution Li_0.12Na_0.88Ta_0.2Nb_0.8O₃ at 350°C was studied using Raman spectroscopy. A considerable broadening of the lines referred to the translational vibrations of the cations in octahedral and cuboctahedral voids and to the vibrations of the oxygen framework, along with a decrease to zero of the intensity of the line corresponding to the bridge stretching mode of the oxygen atoms from the octahedral anion BO₆, was found to take place as the temperature of the solid solution approaches the transition point from below. It is shown that, during the transition, the solid solution loses its ferroelectric properties, probably owing to the preferential increase in the anharmonicity of the vibrations of the cations in the octahedral voids.     

Ion conduction and space-charge polarization processes in Li<Subscript>2</Subscript>Ge<Subscript>7</Subscript>O<Subscript>15</Subscript> crystals

The electrical properties of a lithium heptagermanate (Li₂Ge₇O₁₅) crystal have been studied in DC and AC measuring fields at temperatures from 500 to 700 K. In a DC field, a substantial decrease of electrical conductivity σ with time has been detected. On the basis of kinetic dependences σ(t), estimates of the charge carrier diffusion coefficient D have been obtained. In the frequency range 10¹–10⁵ Hz, the spectra of complex impedance ρ*(f) have been measured. The analysis of diagrams in the complex plane (ρ″–ρ′) has been performed within the equivalent circuit approach. It has been shown that, in the considered temperature and frequency intervals, the electrical properties of Li₂Ge₇O₁₅ crystals have been determined by the hopping conduction of interstitial lithium ions A _Li and accumulation of charge carriers near the blocking Pt electrodes.     

Kinetics of the transient optical absorption in Li<Subscript>2</Subscript>B<Subscript>4</Subscript>O<Subscript>7</Subscript> and LiB<Subscript>3</Subscript>O<Subscript>5</Subscript> lithium borate crystals

This paper reports on a study of the kinetics of electron tunneling transport between electron and hole centers in Li₂B₄O₇ and LiB₃O₅ lithium borate crystals under the conditions where the mobility of one of the partners in the recombination process is thermally stimulated. A mathematical model has been proposed to describe all specific features in the relaxation kinetics of the induced optical density observed in Li₂B₄O₇ (LTB) and LiB₃O₅ (LBO) nonlinear optical crystals within a broad time interval of 10⁻⁸−1 s after a radiation pulse. The results of calculations have been compared with experimental data on transient optical absorption (TOA) of LTB and LBO crystals in the visible and ultraviolet spectral regions. The nature of the radiation defects responsible for TOA and the dependence of the TOA decay kinetics on temperature, excitation power, and other experimental conditions have been discussed.     

Rectifying and photovoltage characteristics of Bi<Subscript>2</Subscript>Sr<Subscript>2</Subscript>Co<Subscript>2</Subscript>O<Subscript>y</Subscript>/Nb-doped SrTiO<Subscript>3</Subscript> heterojunction

A heterojunction was fabricated by growing a layer of Bi₂Sr₂Co₂O _y thin film on the 0.7 wt% Nb-doped SrTiO₃ substrate. Such heterojunction showed good rectifying characteristics over a wide temperature range, and its transport mechanism under the forward bias can be attributed to a space charge limited conduction mechanism via defects near the interface of the heterojunction. Photovoltaic properties of the heterojunction were studied by using both continuous-wave and pulsed irradiations and the results can be well explained by the photovoltaic effect of a p–n junction.     

Theoretical Study of the Structural,Electronic, Chemical Bonding and Optical Properties of the A2<Subscript>1</Subscript><Emphasis Type="Italic">am</Emphasis> Orthorhombic SrBi<Subscript>2</Subscript>Ta<Subscript>2</Subscript>O<Subscript>9</Subscript>

The structural parameters, density of states, electronic band structure, charge density, and optical properties of orthorhombic SrBi₂Ta₂O₉ have been investigated using the plane-wave ultrasoft pseudopotential technique based on the first-principle density functional theory (DFT). The calculated structural parameters were in agreement with the previous theoretical and experimental data. The band structure showed an indirect (S to Γ) band gap with 2.071 eV. The chemical bonding along with population analysis has been studied. The complex dielectric function, refractive index, and extinction coefficient were calculated to understand the optical properties of this compound, which showed an optical anisotropy in the components of polarization directions (100), (010), and (001).     

Monoclinic superstructure V<Subscript>14</Subscript>O<Subscript>6</Subscript> of the tetragonal solid solution of oxygen in vanadium

The monoclinic (space group C2/m) superstructure of V₁₄O₆, which is formed in the atom-vacancy ordering of the tetragonal solid solution of oxygen in vanadium, is studied by the methods of x-ray diffraction and symmetry analysis. It has been found that the channel of the order-disorder phase transition attributed to the formation of the monoclinic suboxide V₁₄O₆ includes six superstructure vectors belonging to three non-Lifshitz stars {k ₁₋₁}, {k ₁₋₂}, and {k _1–3} of one type {k ₁}. The distribution function of the O atoms in the V₁₄O₆ monoclinic superstructure has been calculated. It has been shown that the displacements of V atoms distort the body-centered tetragonal metal sublattice, thus preparing the formation of the fcc sublattice and the transition from the suboxide V₁₄O₆ to the cubic vanadium monoxide with the B1 structure.     

Transient optical absorption and luminescence in <Emphasis Type="Italic">A</Emphasis>Pb<Subscript>2</Subscript>Cl<Subscript>5</Subscript> (<Emphasis Type="Italic">A</Emphasis> = K,Rb) crystals

This paper reports on a study of transient optical absorption and pulsed cathodoluminescence in APb₂Cl₅ (A = K, Rb) in the visible and ultraviolet spectral regions. The measurements performed by absorption optical spectroscopy with nanosecond time resolution showed the transient optical absorption of APb₂Cl₅ to derive from optical transitions in hole centers, and that the optical density relaxation kinetics is mediated by interdefect tunneling recombination in complementary pairs which involves Frenkel defects on the cation sublattice and self-trapped carriers. The slow components in the transient optical absorption decay kinetics, with characteristic times ranging from a few ms to seconds, have been assigned to diffusion-mediated annihilation of interstitial atoms with alkali metal vacancies. The mechanisms underlying creation and relaxation of the short-lived Frenkel defects on the cation sublattice and self-trapped carriers have been analyzed.     

Role of point defects on conductivity, magnetism and optical properties in In2O3

In order to assess the effects of point defects including transition metal doping on its electronic structure, the self-consistent band structure of the transparent oxide In₂O₃ (in the Ia₃ structure) has been calculated with oxygen vacancies, oxygen and indium interstitial atoms and several transition metal dopants using density functional theory based first principles calculations. An oxygen vacancy alone does not act as a strong native donor but when combined with interstitial indium and (substitutional) transition metal doping, shallow donor levels close to the conduction band are formed. Spin polarized calculations show measurable magnetism in some of the transition metal doped systems while the dielectric functions indicate whether such systems remain transparent among other things.     

Study of ferroelectric phase transitions in disordered PbSc<Subscript>1/2</Subscript>Nb<Subscript>1/2</Subscript>O<Subscript>3</Subscript> and PbSc<Subscript>1/2</Subscript>Ta<Subscript>1/2</Subscript>O<Subscript>3</Subscript> solid solutions

Ferroelectric phase transitions and thermodynamic properties of disordered PbSc_1/2Ta_1/2O₃ and PbSc_1/2Nb_1/2O₃ solid solutions have been investigated by the Monte Carlo method. The parameters of the effective Hamiltonian were calculated within the generalized Gordon-Kim model. The obtained values of the phase-transition temperatures and spontaneous polarization are in satisfactory agreement with the experimental data.     

Concentration of Cr<Superscript>4+</Superscript> impurity ions and color centers as an indicator of saturation of forsterite crystals Mg<Subscript>2</Subscript>SiO<Subscript>4</Subscript> with oxygen

The influence of the oxygen partial pressure P _{O 2} in the growth atmosphere on the coefficient of chromium distribution between the crystal and the melt of forsterite, the Cr³⁺ and Cr⁴⁺ ion contents in crystals, and the concentration of color centers induced by irradiation has been investigated. It has been established that the crystals grown at low oxygen partial pressures P _{O 2} (0.01–0.05 kPa) are characterized by low concentrations of Cr⁴⁺ ions and color centers. A change in the oxygen partial pressure to P _{O 2} ∼ 0.85 kPa leads to an increase in the Cr⁴⁺ center concentration by a factor of ∼10 and in the color center concentration by a factor of ∼5. A further increase in the oxygen partial pressure to P _{O 2} to 12 kPa remains the concentration of these centers almost unchanged. A model has been proposed according to which the intrinsic defects formed under conditions of a relative excess of oxygen leads to both the self-oxidation of chromium and the formation of color centers in the forsterite crystals under irradiation.     

New crystal-structure phase in oxygen-nonstoichiometric double-layered perovskite NdBaCo<Subscript>2</Subscript>O<Subscript>5.72</Subscript>

The crystal structure of an NdBaCo₂O_5+δ(δ=0.72) solid solution with a layered perovskite structure is studied by neutron diffraction. It is found that a new crystal-structure phase with the cation-anion ratio 1: 1: 2: 5.75 forms in this solid solution. At the same time, oxygen vacancy ordering occurs in the plane of the rare-earth ion in the crystallographic position \(1c\left( {00\frac{1}{2}} \right)\) of the Pmmm space group. Oxygen vacancy diffusion along the crystallographic axes in the pane of the rare-earth element is also proposed as a mechanism for the formation of other crystal-structure phases found in double-layered cobaltites.     

Electronic Structure of Oxygen Vacancies in the Orthorhombic Noncentrosymmetric Phase Hf<Subscript>0.5</Subscript>Zr<Subscript>0.5</Subscript>O<Subscript>2</Subscript>

The electronic structure of stoichiometric and oxygen-depleted Hf_0.5Zr_0.5O₂ in the orthorhombic noncentrosymmetric phase has been studied by X-ray photoelectron spectroscopy and quantum-chemical simulation based on the density functional theory. It has been established that the ion-etching-induced peak in the photoelectron emission spectrum with the energy above the top of the o-Hf_0.5Zr_0.5O₂ valence band is due to oxygen vacancies. A method of estimating the density of oxygen vacancies from the comparison of the experimental and theoretical photoelectron spectra of the valence band has been proposed. It has been established that oxygen polyvacancies in o-Hf_0.5Zr_0.5O₂ are not formed: the energetically favorable spatial arrangement of oxygen vacancies in a crystal corresponds to noninteracting oxygen vacancies distant from each other.