Modeling of Terahertz Radiation from InSb and InAs

In this paper the THz radiation dynamics of InSb and InAs, two typical narrow band semiconductors, was investigated using the ensemble Monte Carlo method. Our simulations indicated that the single mechanism of current surge only can result in small difference of THz emission efficiency for InSb and InAs. The great advantage of InAs over InSb in THz emission efficiency that was found in a published work is possibly due to the mechanism of optical rectification. In addition, under low excitation level, we found the emission efficiency of InSb is advantage over that of InAs, but under high excitation level, the result is reversed. On the other hand, through the Fourier transforms of temporal THz waveforms we found that the main frequency of THz pulses from InAs is always higher than that of InSb.     

Monte Carlo Study of Terahertz Radiation from InAs

In this paper we investigated the THz radiation dynamics in InAs using the ensemble Monte Carlo method. Our simulations indicated that THz pulse shapes (temporal waveforms) are closely related with the pump laser fluence. The sharp, negative peak of a THz pulse may result from the electron intervalley transfers from center valley to satellite valleys. Our numerical results show that higher laser fluence is an advantage in enhancing the output of high frequency components. The spato-temporal distributions of photo-Dember fields on the semiconductor surface were also analyzed.     

Terahertz Radiation from Graphite Excited by Femtosecond Laser Pulses

We experimentally investigate the terahertz （THz） generation from a graphite surface induced by femtosecond laser pulses, and systematically study the dependence on the excitation power, the crystal orientation of graphite, polarization state and incident angle of optical beam. New evidence related to excitation and detection geometry is found and presented, which supports the THz generation mechanism of transient photocarrier transporting along the basal plane normal. Our observation also suggests other probable contributions by in-plane charge oscillations. The results may be helpful to explore and understand the photoelectric properties of graphite and other allotropes of carbon.     

Backward Terahertz Radiation from a Two-Color Femtosecond Laser Filament

A change in the quasistatic magnetic susceptibility in thin plates of iron borate (FeBO₃), which is a weak ferromagnet, has been revealed at adsorption of water molecules. The measurements have been performed at room temperature with the use of the magneto-optical Faraday effect. The change of the susceptibility in saturated water vapors is about 30%. The observed effect is reversible. The time of establishing the susceptibility after the introduction of water vapors is 1.5 min, which is twice as large as the time of establishing the susceptibility after the evacuation. The effect is explained by the appearance of uniaxial surface magnetic anisotropy in the basal plane because of the adsorption of water molecules.     

激光能量对气体等离子体产生太赫兹波的影响

双色激光脉冲激励气体等离子体产生太赫兹波是得到高强度宽频带太赫兹波的重要方法,本文利用光电流模型研究了该方法中激光能量对产生太赫兹波的影响。理论计算表明,太赫兹波随激光能量的增大而增强,而太赫兹波的频谱结构不受激光能量的影响。分析了双色激光能量影响太赫兹波强度的原因,并利用自由电子浓度和电子电流密度诠释了该影响的内在物理机制。该研究为提高太赫兹辐射强度提供了一种有效的途径。     

Destruction of Doped Lithium Tetraborate under Exposure to Ionizing and Laser Radiation

Optics and Spectroscopy - The results of the study of the degradation of thermoluminescent materials Li2B4O7:Be + Mn and Li2B4O7:Zn + Mn under the effect of radiation (pulsed electron beam) and...     

Polarity Reversal of Terahertz Electric Field from Heavily p-Doped Silicon Surfaces

Above-band-gap optical excitation of electron-hole pairs screens the doping-induced surface electric field and generates terahertz(THz) pulses via free-carrier transport. THz emission from a heavily doped silicon surface is much weaker than that of lightly doped samples. A polarity reversal of the THz electric field is observed in heavily doped p-type silicon, indicating that the doping related and carrier induced surface electric fields oppose each other. By comparing the penetration depth of the excitation laser with the thickness of the depletion layer for the doped silicon, it is shown that competition between diffusion and drift current causes the polarity reversal.     

Terahertz Radiation Transport in Photonic Glasses

Multiple scattering of electromagnetic (EM) waves arises in disordered media with a refractive index varying on the scale of the wavelength. The diffusion approximation is a powerful tool to treat multiple scattering as a photon random walk, neglecting resonant phenomena. However, as the light intensity varies on a scale much smaller than the transport mean free path, resonances may occur in media formed by finite-size scatterers and break the diffusion approximation. The energy and phase velocity are very useful tools to reveal the onset of the resonant transport regime. In this paper the study of the propagation of terahertz (THz) waves through 3D random media by employing terahertz time-domain spectroscopy (THz-TDS) is addressed. Specifically, measurements of the electric field transmitted by samples of different thicknesses made of 1 mm diameter silica spheres dispersed in a paraffin matrix at different filling fractions are reported. This investigation has provided an accurate measurement of the EM field phase and, hence, information on the radiation propagation velocity that has enabled the first observation of a photonic glass at the THz range.     

Numerical Comparisons of Terahertz Radiation from GaAs and GaAs: As+ Substrates

In this paper, we have numerically analyzed the ultrafast change of local fields on the surfaces of a large-aperture photoconducting (LA-PC) antenna with GaAs and GaAs: As+ substrates. We find that the ultrafast screening of photogenerated carriers to the externally applied electric field has different effects on the saturation of THz radiation as the function of the laser fluence in the near and far field, respectively. Both screening effect of photocarriers and radiation effect are important in forming the saturation phenomena in the case of near field. But in far field, only the radiation effect is important.     

非晶硅辐射探测器

近年来,许多国家开展了用非晶硅（ａ－Ｓｉ:Ｈ）作为探测器材料的研究,并取得了明显的进展．本文简要介绍这种探测器的原理、结构、现状及其应用前景． Recently, the investigation to make radiation detectors with amorphous Silicon(a-Si:H) were reported in many countries of the world. In this paper, operation principles,structures, current status and prospect of applications in various fields of science on these detectors were reviewed briefly.     

Breaking of the Axial Symmetry of Terahertz Radiation from Single-Color Filament Plasma

JETP Letters - Two-dimensional distribution patterns of terahertz radiation generated in a laser single-color filament plasma are measured at several frequencies. In the low-frequency region...     

Terahertz Radiation from a Longitudinal Electric Field Biased Femtosecond Filament in Air

The terahertz(THz) temporal waveform and spectrum from a longitudinal electrically biased femtosecond filament is studied experimentally. The initial direction of the electron motion inside the unbiased filament plasma is deduced from the transformation of the THz temporal waveform with applied fields of opposite polarities.Furthermore, a spectrum shift to lower frequency of the THz spectrum is observed in the presence of a biased field. It agrees well with theoretical predictions.     

Light Engineering and Silicon Diffractive Optics Assisted Nonparaxial Terahertz Imaging

The art of light engineering unveils a world of possibilities through the meticulous manipulation of photonic properties such as intensity, phase, and polarization. Precision control over these properties finds application in a variety of fields spanning communications, light–matter interactions, laser direct writing, and imaging. Terahertz (THz) range, nestled between microwaves and infrared light, stands out for its remarkable ability to propagate with minimal losses in numerous dielectric materials and compounds, making THz imaging a powerful tool for noninvasive control and inspection. In this study, a rational framework for the design and optimal assembly of nonparaxial THz imaging systems is established. The research is centered on lensless photonic systems composed solely of high-resistivity silicon-based nonparaxial elements such as the Fresnel zone plate, the Fibonacci lens, the Bessel axicon, and the Airy zone plate, all fabricated using laser ablation technology. Through a comprehensive examination through illumination engineering and scattered light collection from raster-scanned samples in a single-pixel detector scheme, the imaging systems are evaluated via diverse metrics including contrast, resolution, depth of field, and focus. These findings chart an exciting course toward the development of compact and user-friendly THz imaging systems where sensors and optical elements seamlessly integrate into a single chip.     

Semi-Analytical Calculation of Terahertz Signal Generated from Photocurrent Radiation in Traveling-Wave Photonic Mixers

A semi-analytical method based on distributed source transmission line model is proposed to analyze a traveling-wave terahertz photomixer integrated with a coplanar stripline waveguide. Multilayer spectral domain method along with complex image technique have been applied to calculate the distributed voltage source element in the transmission line representation. To find the coupled terahertz signal along the coplanar stripline, the transmission line equations are solved. The results obtained from the proposed method are verified by the full wave analysis.     

Extreme Ultraviolet Radiation Source Based on a Discharge Sustained by a Radiation Pulse from a Terahertz Free-Electron Laser

Journal of Experimental and Theoretical Physics - We consider the possibility of sustaining a discharge in xenon efficiently emitting light in a wavelength range of 11.2 nm ± 1% by a...     

Eu掺杂SiC_xO_y薄膜的Eu~(3+)发光机制

利用磁控溅射技术在低温250℃下制备Eu掺杂SiC_xO_y薄膜,研究薄膜的Eu~(3+) 发光激发机制。实验结果表明,薄膜的发光谱由来自基体材料的蓝光和来自Eu~(3+) 的红光组成;随着薄膜中Eu含量由0.19%增加到2.27%,其红光强度增加3倍左右,而蓝光逐渐减弱。Raman光谱及荧光瞬态谱分析表明,其蓝光由中立氧空位缺陷发光中心引起。结合薄膜的Eu~(3+) 激发光谱分析,SiC_xO_y∶Eu薄膜的红光增强源于薄膜中Eu~(3+) 离子浓度的增加和/或基体材料的中立氧空位缺陷发光中心与Eu~(3+) 离子的能量转移。     

Radiation Stability of Nickel Doped Solar Cells

Physics of the Solid State - The effect of doping with nickel on the radiation stability of silicon solar cells has been studied within a γ-radiation dose range of 105–108 rad. It has...     

Interband absorption and luminescence in small quantum dots under strong magnetic fields

Interband absorption and luminescence of quasi-two-dimensional, circularly symmetric, N_e-electron quantum dots are studied at high magnetic fields, 8B60 T, and low temperatures, T2 K. In the N_e=0 and 1 dots, the initial and final states of such processes are fixed, and thus the dependence on B of peak intensities is monotonic. For larger systems, ground state rearrangements with varying magnetic field lead to substantial modifications of the absorption and luminescence spectra. Collective effects are seen in the N_e=2 and 3 dots at “filling fractions” and .     

The Formation and Structure of Thermomigration Silicon Channels Doped with Ga

Technical Physics - Vertical through Si(Ga) p channels are created at 1450 K in c-Si(111) plates by thermomigration of local gallium zones. To this end, a technique is proposed and implemented for...     

Effects of Terahertz Radiation on Living Cells: a Review

Optics and Spectroscopy - This review discusses the current state of research concerning the effects of terahertz (THz) radiation on living cells in the context of biosafety of THz radiation for...