Initial stage of the adsorption of fluorofullerene molecules on Si surface

Spatially resolved images of an individual C₆₀F₁₈ fluorofullerene molecule on Si(100) − 2 × 1 surface have been obtained using scanning tunneling microscopy. Scanning tunneling microscopy results and ab initio calculations show that the fluorofullerene molecules interact with the Si(100) − 2 × 1 surface with F atoms pointing down towards the surface. The adsorption energy of a C₆₀F₁₈ molecule on Si(100) − 2 × 1 surface is ∼12.1 eV, which is much higher than the adsorption energy of the same molecule on Si(111) − 7 × 7 surface (6.65 eV). C₆₀F₁₈ molecules are located in the troughs in-between the dimer rows occupying the four-dimer site on Si(100) − 2 × 1 surface.     

三氧化钨表面氢吸附机理的第一性原理研究

采用基于密度泛函理论的第一性原理平面波超软赝势方法,在广义梯度近似下,研究了立方WO_3,WO_3(001)表面结构及其氢吸附机理.计算结果表明立方晶体WO_3理论带隙宽度为0.587 eV.WO_3(001)表面有WO终止(001)表面和O终止(001)表面两种结构,表面结构优化后W—O键长和W—O—W键角改变,从而实现表面弛豫;WO终止(001)表面和O终止(001)表面分别呈现n型半导体特征和p型半导体特征.分别计算了H原子吸附在WO终止(001)表面和O终止(001)表面的H—O_(2c)—H,H—O_(2c)…H—O_(2c),H—O_(1c)—H和H—O_(1c)…H—O_(1c)四种吸附构型,其中H—O_(1c)—H吸附构型的吸附能最小,H—O键最短,H失去电子数最多,分别为-3.684 eV,0.0968 nm和0.55e,此吸附构型最稳定.分析其吸附前后的态密度,带隙从吸附前的0.624 eV增加到1.004 eV,价带宽度基本不变.H的1s轨道电子与O的2p,2s轨道电子相互作用,在-8和-20 eV附近各形成了一个较强的孤立电子峰,两个H原子分别与一个O_(1c)原子形成化学键,最终吸附反应生成了一个H_2O分子,同时产生了一个表面氧空位.     

Theoretical study of interaction between atoms of Au, Ag, Cu and clean Si(1 1 1) surface

To evaluate the interactions between the atoms of Au, Ag and Cu and clean Si(1 1 1) surface, two types of silicon clusters Si₄H₇ and Si₁₆H₂₀ together with their metal complexes were studied by using hybrid (U)B3LYP density functional theory method. Optimized geometries and energies on different adsorption sites indicate that: (1) the binding energies at different adsorption sites are large (ranging from 1.2 to 2.6 eV depend on the metal atoms and adsorption sites), suggesting a strong interaction between metal atom and silicon surface; (2) the most favorable adsorption site is the on top (T) site. Mulliken population analysis indicated that in the system of on top (T) site, a covalent bond is formed between metal atom and dangling bond of surface Si atom.     

DFT study of BaTiO<Subscript>3</Subscript> (001) surface with O and O<Subscript>2</Subscript> adsorption

Progress of scanning tunneling microscopy (STM) allowed to handle various molecules adsorbed on a given surface. New concepts emerged with molecules on surfaces considered as nano machines by themselves. In this context, a thorough knowledge of surfaces and adsorbed molecules at an atomic scale is thus particularly invaluable. In this work, within the framework of density functional theory (DFT), we present an electronic and structural ab initio study of a BaTiO₃ (001) surface (perovskite structure) in its paraelectric phase. As far as we know the atomic and molecular adsorption of oxygen at surface is then analyzed for the first time in the literature. Relaxation is taken into account for several layers. Its analysis for a depth of at least four layers enables us to conclude that a reasonable approximation for a BaTiO₃ (001) surface is provided with a slab made up of nine plans. The relative stability of two possible terminations is considered. By using a kinetic energy cut off of 400 eV, we found that a surface with BaO termination is more stable than with TiO₂ termination. Consequently, a surface with BaO termination was chosen to adsorb either O atom or O₂ molecule and the corresponding calculations were performed with a coverage 1 on a (1×1) cell. A series of cases with O₂ molecule adsorbed in various geometrical configurations are also analyzed. For O₂, the most favorable adsorption is obtained when the molecule is placed horizontally, with its axis, directed along the Ba-Ba axis and with its centre of gravity located above a Ba atom. The corresponding value of the adsorption energy is -9.70 eV per molecule (-4.85 eV per O atom). The molecule is then rather extended since the O–O distance measures 1.829 ?. By comparison, the adsorption energy of an O atom directly located above a Ba atom is only -3.50 eV. Therefore we are allowed to conclude that the O–O interaction stabilizes atomic adsorption. Also the local densities of states (LDOS) corresponding to various situations are discussed in the present paper. Up to now, we are not aware of experimental data to be compared to our calculated results.     

Chemical adsorption of C60 on diamond (100)(2×1) surfaces

Molecular-dynamics simulations (MDSs) and ab initiocalculations are used to investigate the adsorption behavior of C₆₀ molecules on a clean dimer-reconstructed (100)(2×1) diamond surface. C₆₀ molecules have some probability to be adsorbed on the diamond surface at low incident energy (6∼45 eV). Electron-density contours show strong chemical interaction between C₆₀ molecules and the substrate surface. The adsorption property depends strongly on the incident energy and the impacting point. An incident energy of 18 eV may be an appropriate energy to grow a sub-monolayer or monolayer C₆₀ film on a clean C(100)(2×1) surface at room temperature. Received: 5 July 2000 / Accepted: 17 October 2000 / Published online: 28 February 2001     

Sb/Si(001)表面的半经验研究

用基于Chadi模型和格林函数方法的一种计算表面应力的半经验方法研究了Sb吸附在Si(001) 衬底上的性质.结果显示,Sb原子在Si(001)表面形成对称的dimer,其键长为0.293nm,表 面以下层的弛豫很小.Sb/Si(001)2×1表面沿着dimer方向的张应力为1.0eV/(1×1cell),而 沿垂直于dimer方向的压应力为-1.1eV/(1×1cell).Sb/Si(001)表面应力的主要贡献来自于 最上面三层表面. 关键词： 表面应力 异质生长 格林函数方法     

DFT-GGA study of NO adsorption on the LaO (001) surface of LaFeO3

In order to demonstrate the adsorption of the nitrogen monoxide molecule (NO) on the LaO (001) surface of LaFeO₃, we perform simulations based on density functional theory. The generalized gradient approximation (GGA) for the exchange-correlation energy functional indicates that the electronic state of the LaFeO₃ bulk is an anti-ferromagnetic insulator with a local magnetic moment of 4.1 μ_B at each Fe atom. Using the ultrasoft pseudo-potential method with spin-polarized GGA, fully optimized internal parameters as well as charge and spin density are determined for the NO-adsorbed structure prepared in a slab model. The calculated adsorption energy of NO is around ? 1.4 eV on the LaO (001) surface of LaFeO₃. This value decreases down to ? 4.46 eV at an oxygen vacancy site, where the nitrogen atom of NO is embedded in the 1st LaO layer forming a bond with Fe in the 2nd FeO layer.     

Adsorption of nitrogen-containing aromatic molecules on Si(1 1 1)-7 × 7

The adsorption configurations of pyrimidine and triazine on Si(1 1 1)-7 × 7 were investigated using high-resolution electron energy loss spectroscopy (HREELS) X-ray photoelectron spectroscopy and density functional theory calculations. The HREELS spectra of chemisorbed monolayer show the coexistence of the C(sp²)-H and C (sp³)-H stretching modes together with the observation of the unconjugated CN(C) vibrational feature suggesting that the carbon atom and its para-nitrogen atom of pyrimidine and triazine directly participate in binding with the surface to form Si-C and Si-N σ-linkages. The core levels of the C-atom and its opposite nitrogen atom directly binding with Si-atoms experience a down-shifting by 1.8-1.9 and 1.4-1.6 eV, respectively. These experimental findings are consistent with the density functional theory calculations indicating that the carbon atom and its para-nitrogen atom favorably link with the adjacent adatom and rest atom pair to form C-Si and N-Si linkages.     

Scanning tunneling microscopy/spectroscopy study of adsorption of C<Subscript>60</Subscript>F<Subscript>36</Subscript> molecules on the 7 × 7-Si(111) surface

Spatially resolved images of an individual C₆₀F₃₆ fluorofullerene molecules on Si(111)-7 × 7 surface have been obtained by means of scanning tunneling microscopy/spectroscopy (STM/STS). The presence of isomers with different symmetry (T, C ₃, C ₁) has been revealed in STM investigation of initial adsorption stage of C₆₀F₃₆ on silicon surface Si(111)-(7 × 7). The adsorbed fluorofullerene molecule can occupy any adsorption site of silicon surface (corner site, faulted half, unfaulted half) that indicates for strong molecule-substrate interaction. The HOMO-LUMO gap of the adsorbed C₆₀F₃₆ molecules have been estimated from current image tunneling spectroscopy (CITS) and z(V) with engaged feedback measurements. The value of HOMO-LUMO gap observed experimentally was 3 eV. The C₆₀F₃₆ molecules adsorption on Si(111)-(7 × 7) surface was stable and kept equilibrium configuration during several hours.     

氯原子在Cu(111)表面的吸附结构和电子态

密度泛函理论(DFT)总能计算研究了不同覆盖度下氯原子在Cu(111)表面的吸附结构和表面电子态。计算结果表明,清洁Cu(111)表面自由能 为15.72 ,表面功函数φ为4.753eV。在1/4ML和1/3ML覆盖度下,每个氯原子在Cu(111)表面fcc谷位的吸附能分别等于3.278eV/atom和3.284eV/atom。在1/2ML覆盖度下,两个紧邻氯原子分别吸附于fcc和hcp谷位,氯原子的平均吸附能为2.631eV/atom。在1/3ML覆盖度下,fcc和hcp两个位置每个氯原子吸附能的差值约为2meV/atom,与正入射X光驻波实验结合蒙特卡罗方法得到结果(<10meV/atom)基本一致。在1/4ML、1/3ML和1/2ML覆盖度下,吸附后Cu(111)表面的功函数依次为5.263eV、5.275eV和5.851eV。吸附原子和衬底价轨道杂化形成的局域表面电子态位于费米能级以下约1.2eV、3.6eV和4.5eV等处。吸附能和电子结构的计算结果表明,氯原子间的直接作用和表面铜原子紧邻氯原子数目是决定表面结构的两个重要因素。     

Theoretical study on adsorption of thiophenethiolate molecule on Au(1 1 1) surface

We have theoretically studied the adsorption of a thiophenethiolate (C₄H₃S-S) molecule on the Au(1 1 1) surface by first-principles calculations. It is found that the bridge site is the most stable adsorption site with the adsorption energy of 1.02 eV. In the optimized adsorption geometry, the bond between the head S atom and the connected C atom in the tail thiophene molecule is tilted by 57.2° from the surface normal. In addition, the adsorption of thiophenethiolate induces large relaxations of the surface Au atoms around it. Furthermore, weak interactions between the S atom in the tail thiophene ring and the Au atoms also contribute to the adsorption on the Au surface.     

Ab-initio molecular dynamical study of a single transition metal atom on fullerene C<Subscript>60</Subscript>: the case of Ta

We report the first-principles Car-Parrinello molecular dynamics study of the behaviour of a single transition metal Ta atom on fullerene C₆₀, at different temperatures, and for both neutral and charged clusters. We seek to characterise the motion of the lone Ta metal atom on the C₆₀ surface, contrasting its behaviour both with that of three Ta atoms, as well as with a single alkali metal atom on the cage surface. Our earlier simulations on C₆₀Ta₃ had revealed that the Ta atoms on the surface of the fullerene are affected by a rather high mobility, and that the motion of these atoms is highly correlated due to Ta-atom-Ta-atom attraction. Earlier, experimental studies of a single metal atom (K, Rb) on the surface of a C₆₀ molecule had led to the inference that at room temperature the metal atom skates freely over the surface, the first direct evidence for which was presented by us in earlier first principles molecular dynamical simulations.     

Adsorption and diffusion of an Au atom and dimer on a θ-Al2O3 (001) surface

With density-functional calculations we have investigated adsorption and diffusion of an Au atom and an Au₂ dimer on a θ-Al₂O₃(001) surface. The surface structure of θ-Al₂O₃(001) has an armchair-like configuration containing flat and trench areas and the Au_n (n = 1 or 2) cluster prefers to adsorb on the flat area. A single Au atom adsorbs on an O–Al bridge site with adsorption energy 0.35 eV, whereas an Au₂ dimer bonds to the oxide with adsorption energy 0.78 eV, with one Au coordinated singly to a surface O. Formation of Au₂ from Au₁ is favored, with a negligible energy barrier. The calculated energy barriers for diffusion indicate that an Au atom diffuses more rapidly than an Au₂ dimer but both prefer to diffuse anisotropically, along the flat area of the θ-Al₂O₃(001) surface.     

Atomic and electronic properties of tert-butanol on the Si(001)-(2×1) surface

The atomic and electronic properties of the adsorption of tert-butanol [(CH₃)₃OH] molecule on the Si(001)-(2×1) surface have been studied by using the ab-initio density functional theory (DFT) based on pseudopotential approach. We have found that tert-butanol bonded the Si(001) surface by oxygen atom, cleaving a O–H bond and producing a Si-H bond and tert-butoxy surface species. We have also investigated the influence of chemisorption of tert-butanol on the electronic structure of the clean Si(001)-(2×1) surface. Two occupied surface states situated entirely below the bulk valence band maximum have been identified, which means that the clean Si(001)-(2×1)surface was passivated by the chemisorption of tert-butanol. In order to explain the nature of the surface components we have also plotted the total and partial charge densities at the [`(K)]\bar{K} point of the surface Brillouin zone (SBZ).     

Origin of enhanced Ge interdiffusion at the initial stage of Ge deposition on Si(5 5 12)-2 × 1: Tensile stress induced by substrate chain structures

By combined investigation of STM and synchrotron PES on Ge/Si(5 5 12)-2 × 1 at 530 °C, it has been found that, in addition to the upward-relaxed surface Si atoms, a subsurface Si atom is also readily replaced by an arriving Ge atom at the initial adsorption stage. Such enhanced interdiffusion is due to a unique character of one-dimensional chain structures of the reconstructed substrate, such as π-bonded and honeycomb chains not existing on other low-index Si surfaces such as Si(001)-c(4 × 2) and Si(111)-7 × 7, applying a tensile surface stress to the neighbouring subsurface atoms. Interdiffusion of Ge having lower surface energy induces adsorption of the displaced Si atoms on the surface to form sawtooth-like facets composed of (113)/(335) and (113)/(112) with arriving Ge atoms until the surface is filled with those facets. Such displacive adsorption is the origin of high Si concentration of formed facets.     

Understanding 4-bromostyrene Adsorption on the Si(001)-(1 × 2) surface: A density functional theory study

Adsorption properties of 4-bromostyrene (Br–Sty) on the Si(001)-(1 × 2) surface are investigated by ab initio calculation based on density functional theory (DFT). For the adsorption of Br–Sty molecule on the Si(001)-(1 × 2) surface, we have assumed two possible cases within: (i) binding on the partially H-terminated surface and (ii) binding on the clean surface. For the first case, we have estimated two different binding sides: (i) Bromine-terminated bindings and (ii) Carbon-terminated binding. The adsorption energies of Br-terminated and C-terminated binding were found as 0.36 eV and 3.76 eV, respectively. In the same manner, we have also assumed two possible binding sides for the clean surface: (i) Br-terminated binding and (ii) ring-shaped binding. We have found adsorption energies for Br-terminated and ring-shaped binding as 0.14 eV and 1.10 eV on the clean surface, respectively. Moreover, the nudged elastic band method (NEB) was used to reveal the adsorption pathway of these binding models. These results serve to understand the possibility of the adsorption of Br–Sty molecules onto different kind of silicon surfaces into different reaction conditions.     

Atomic Layer Deposition of Al2O3 on H-Passivated GeSi： Initial Surface Reaction Pathways with H/GeSi（100）-2 × 1

The reaction mechanisms of Al（CH3 ）3 （TMA） adsorption on H-passivated GeSi（100）-2 × 1 surface are investigated with density functional theory. The Si-Ge and Ge-Ge one-dimer cluster models are employed to represent the GeSi（100）-2 × 1 surface with different Ge compositions. For a Si-Ge dimer of a H-passivated SiGe surface, TMA adsorption on both Si-H^＊ and Ge-H^＊ sites is considered. The activation barrier of TMA with the Si-H^＊ site （1.2eV） is higher than that of TMA with the Ge-H^＊ site （0.91 eV）, which indicates that the reaction proceeds more slowly on the Si-H^＊ site than on the Ge-H^＊ site. In addition, adsorption of TMA is more energetically favorable on the Ge-Ge dimer than on the Si-Ge dimer of H-passivated SiGe.     

Adsorption Mechanism of Hydrogen on Boron-Doped Fullerenes

The C35BH-H2 complex and two other possible isomers, C34BCaH-H2 and C34BCbH-H2, are investigated using the local-spin-density approximation （LSDA） method. The results indicate that a single hydrogen molecule could be strongly adsorbed on two isomers, C34BCaH and C34BCbH, with binding energies of 0.42 and 0.47eV, respectively, and that these calculated binding energies are suitable for reversible hydrogen adsorption/desorption near room temperature. However, it is difficult for the H2 molecule to be firmly adsorbed on C35BH. We analyze the interaction between C34BCxH （x= a, b） and the H2 molecule using dipole moments and molecular orbitals. The charge analysis showed there was a partial charge （about 0.32e） transfer from 1-12 to the doped fullerenes. These calculation results should broaden our understanding of the mechanisms of hydrogen storage using borondoped fullerenes.     

LaNiO3 under-electrode layers for the growth of textured (Pb0.4Zr0.6)TiO3 thin films using pulsed laser deposition

We investigated the structural properties of LaNiO₃ thin films of three different thicknesses deposited by pulsed laser deposition on Si(001) mainly by using a synchrotron X-ray scattering measurement. The LaNiO₃ thin films were grown with the (00l) preferred growth direction, showing completely random distribution in the in-plane direction. In the early stage of the growth, the film was almost unstrained. However, as the film grew further, tensile strain was markedly involved. Also its surface became rougher but its crystalline quality improved significantly with increasing film thickness. A completely (00l)-oriented (Pb_0.4Zr_0.6)TiO₃ thin film was successfully grown on such a LaNiO₃/Si(001) substrate at a substrate temperature of 350 °C by using the same pulsed laser deposition. Our results show that the LaNiO₃ film can serve effectively as a bottom electrode layer for the preparation of a well-oriented (Pb_0.4Zr_0.6)TiO₃ thin film on Si substrates.     

Adsorption and diffusion of a Si adatom on the H/Si(1 1 1) surface: comparison with the H/Si(0 0 1) surface

Using a first-principles method, we investigate the adsorption and diffusion of a Si adatom on the H-terminated Si(1 1 1) substrate, which would be useful in understanding the initial stages of Si homoepitaxy using a H surfactant. The adatom substitutes H atom(s) to form a monohydride structure or a dihydride structure. In forming the monohydride structure, the energy barrier for H substitution is absent. The adatom migrates on the surface with alternating its chemical state between monohydride and dihydride. These behaviors of the adatom are quite similar to those on the H/Si(0 0 1)2 × 1 surface, despite the significant difference in the substrate structure between both orientations. The resulting diffusion barrier is 1.30 eV, which is also comparable to that on the H/Si(0 0 1)2 × 1 surface.