Geometries and electronic properties of the neutral and charged rare earth Yb-doped Si(n) (n = 1-6) clusters: a relativistic density functional investigation

The neutral and charged YbSi(n) (n = 1-6) clusters considering different spin configurations have been systematically investigated by using the relativistic density functional theory with generalized gradient approximation. The total bonding energies, equilibrium geometries, Mulliken populations (MP), Hirshfeld charges (HC), fragmentation energies, and highest occupied molecular orbital-lowest unoccupied molecular orbital (HOMO-LUMO) gaps are calculated and discussed. The optimized geometries indicate that the most stable YbSi(n) (n = 1-6) clusters keep basically the analogous frameworks as the low-lying Si(n)(+1) clusters, while the charged species deviate from their neutral counterparts, and that the doped Yb tends to occupy the substitutional site of the neutral and charged YbSi(n) isomers. The relative stabilities are investigated in terms of the calculated fragmentation energies, exhibiting enhanced stabilities for the remarkably stable neutral and charged YbSi2 and YbSi5 clusters. Furthermore, the calculated MP and HC values show that the charges of the neutral and charged YbSi(n) clusters transfer from the Yb atom to Si(n) atoms and the Yb atom acts as an electron donor, and that the f orbitals of the Yb atom in the neutral and charged YbSi(n) clusters behave as core without involvement in chemical bonding. The calculated HOMO-LUMO gaps indicate that the YbSi2 and YbSi4+ clusters have stronger chemical stabilities. Comparisons of the Yb-doped Si(n) (n = 1-6) with available theoretical results of transition-metal-doped silicon clusters are made. The growth pattern is investigated also.     

Structural and electronic properties of TaSi(n) (n=1-13) clusters: a relativistic density functional investigation

The TaSi(n) (n=1-13) clusters with doublet, quartet, and sextet spin configurations have been systematically investigated by a relativistic density functional theory with the generalized gradient approximation available in Amsterdam density functional program. The total bonding energies, equilibrium geometries, Mulliken populations as well as Hirshfeld charges of TaSi(n) (n=1-13) clusters are calculated and presented. The emphasis on the stabilities and electronic properties is discussed. The most stable structures of the small TaSi(n) (n=1-6) clusters and the evolutional rule of low-lying geometries of the larger TaSi(n) (n=7-13) clusters are obtained. Theoretical results indicate that the most stable structure of TaSi(n) (n=1-6) clusters keeps the similar framework as the most stable structure of Si(n+1) clusters except for TaSi(3) cluster. The Ta atom in the lowest-energy TaSi(n) (n=1-13) isomers occupies a gradual sinking site, and the site moves from convex, to flatness, and to concave with the number of Si atom varying from 1 to 13. When n=12, the Ta atom in TaSi(12) cluster completely falls into the center of the Si frame, and a cagelike TaSi(12) geometry is formed. Meanwhile, the net Mulliken and Hirsheld populations of the Ta atom in the TaSi(n) (n=1-13) clusters vary from positive to negative, manifesting that the charges in TaSi(n) (n>/=12) clusters transfer from Si atoms to Ta atom. Additionally, the contribution of Si-Si and Si-Ta interactions to the stability of TaSi(n) clusters is briefly discussed. Furthermore, the investigations on atomic averaged binding energies and fragmentation energies show that the TaSi(n) (n=2,3,5,7,10,11,12) clusters have enhanced stabilities. Compared with pure silicon clusters, a universal narrowing of highest occupied molecular orbital-lowest unoccupied molecular orbital gap in TaSi(n) clusters is found.     

A computational investigation of copper-doped germanium and germanium clusters by the density-functional theory

The geometries, stabilities, and electronic properties of Ge(n) and CuGe(n) (n = 2-13) clusters have been systematically investigated by using density-functional approach. According to optimized CuGe(n) geometries, growth patterns of Cu-capped Ge(n) or Cu-substituted Ge(n+1) clusters for the small- or middle-sized CuGe(n) clusters as well as growth patterns of Cu-concaved Ge(n) or Ge-capped CuGe(n-1) clusters for the large-sized CuGe(n) clusters are apparently dominant. The average atomic binding energies and fragmentation energies are calculated and discussed; particularly, the relative stabilities of CuGe10 and Ge10 are the strongest among all different sized CuGe(n) and Ge(n) clusters, respectively. These findings are in good agreement with the available experimental results on CoGe10- and Ge10 clusters. Consequently, unlike some transition metal (TM)Si12, the hexagonal prism CuGe12 is only low-lying structure; however, the basket-like structure is located as the lowest-energy structure. Different from some TM-doped silicon clusters, charge always transfers from copper to germanium atoms in all different sized clusters. Furthermore, the calculated highest occupied molecular orbital and lowest unoccupied molecular orbital (HOMO-LUMO) gaps are obviously decreased when Cu is doped into the Ge(n) clusters, together with the decrease of HOMO-LUMO gaps, as the size of clusters increases. Additionally, the contribution of the doped Cu atom to bond properties and polarizabilities of the Ge(n) clusters is also discussed.     

Stable Tin (n = 2-15) clusters and their geometries: DFT calculations

We present a detailed structural analysis for small Tin (n = 2-15) clusters based on ab initio quantum mechanical calculations of their binding energies, frontier orbital gaps, and second energy derivatives. Local density approximation calculations revealed that while the smaller clusters (n < or = 8) prefer hexagonal atomic arrays with bulklike crystal symmetry, the bigger clusters prefer pentagonal atomic arrays. From the stability criteria of the magic number clusters we could identify three magic number clusters Ti7, Ti13, and Ti15. While the most stable configuration of Ti7 is a decahedral bipyramid induced by tetrahedral atomic arrays, the most stable configuration of Ti13 is an icosahedron. The other stable cluster Ti15 takes a closed-shell icosahedron-like configuration with both pentagonal and hexagonal symmetries. The stability of the Tin clusters strongly depends on their geometries and charge states. The HOMO-LUMO gap of the Tin clusters approaches its bulk value for n > 8. While there is not much difference between the HOMO and LUMO isosurface charge distributions for the Ti7 and Ti13 clusters in their most stable configurations, they are very different in the case of Ti15. Such a distinct charge distribution in Ti15 indicates its singular chemical selectivity over the other two magic number clusters.     

Relativistic computational investigation: the geometries and electronic properties of TaSi(n)+ (n = 1-13, 16) clusters

The equilibrium geometries, stabilities, and electronic properties of the TaSi(n)+ (n = 1-13, 16) clusters are investigated systematically by using the relativistic density functional method with generalized gradient approximation. The small-sized TaSi(n)+ clusters with slight geometrical adjustments basically keep the frameworks that are analogous to the neutrals while the medium-sized charged clusters significantly deform the neutral geometries, which are confirmed by the calculated AIP and VIP values. Furthermore, the optimized geometries of the charged clusters agree with the experimental results of Hiura and co-workers (Hiura, H.; Miyazaki, T.; Kanayama, T. Phys. Rev. Lett. 2001, 86, 1733). The highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) gaps of the charged clusters are generally increased as the cluster size goes from n = 1 to 13; and the large HOMO-LUMO gaps of charged clusters resulting from the positive charge indicate that their chemical stabilities are stronger than their neutral counterparts, especially for n = 4, 6, and 7 clusters. Additionally, the contributions of the d orbitals of the Ta atom to the HOMO and LUMO reveal that the chemical activity of the d orbitals of the Ta atom decreases gradually as the number of silicon atoms increases. This interesting finding is in good agreement with the recent experimental results on the reactive activities of the H2O and transition-metal silicon clusters (Koyasu, K.; Akutsu, M.; Mitsui, M.; Nakajima, A. J. Am. Chem. Soc. 2005, 127, 4998). Generally, the positive charge significantly influences the electronic and geometric structures of the charged clusters. Finally, the most stable neutral and charged TaSi16 clusters are found to be fullerene-like structures and the HOMO-LUMO gap in charged form is detectable experimentally.     

Pressure and size effects in endohedrally confined hydrogen clusters

Density functional theory is used to carry out a systematic study of zero-temperature structural and energy properties of endohedrally confined hydrogen clusters as a function of pressure and the cluster size. At low pressures, the most stable structural forms of (H(2))(n) possess rotational symmetry that changes from C(4) through C(5) to C(6) as the cluster grows in size from n=8 through n=12 to n=15. The equilibrium configurational energy of the clusters increases with an increase of the pressure. The rate of this increase, however, as gauged on the per atom basis is different for different clusters sizes. As a consequence, the size dependencies of the configurational energies per atom at different fixed values of pressure are nonmonotonic functions. At high pressures, the molecular (H(2))(n) clusters gradually become atomic or dominantly atomic. The pressure-induced changes in the HOMO-LUMO gap of the clusters indicate a finite-size analog of the pressure-driven metallization of the bulk hydrogen. The ionization potentials of the clusters decrease with the increase of pressure on them.     

Au12M (M=Na,Mg, Al,Si, P,S, Cl)团簇的结构、稳定性和电子性质

采用基于密度泛函理论的第一性原理方法系统地研究了Au12M(M=Na,Mg,Al,Si,P,S,Cl)团簇的结构、稳定性和电子性质.对团簇的平均结合能、镶嵌能、垂直离化势、最高占据分子轨道(HOMO)和最低未占据分子轨道(LUMO)的能级差、电荷布居分析、自然键轨道(NBO)进行了计算和讨论.对于Au12M(M=Na,Mg,Al)团簇,它们形成了内含M原子的最稳定的笼状结构.然而对于Au12M(M=Si,P,S,Cl)团簇,它们却形成了以M元素为顶点的稳定锥形结构.在这些团簇中发现Au12S团簇相对是最稳定的,这是由于Au12S团簇形成了稳定的满壳层的电子结构.自然电荷布居分析表明:对于所有的Au12M(M=Na,Mg,Al,Si,P,S,Cl)团簇电荷总是从Au原子转向M原子.自然键轨道和HOMO分析表明Au12M团簇中发生了Au原子的s-d轨道和M原子的p轨道间的杂化现象.     

TbSin(n=2-13)团簇的结构、电子及磁学性质

利用相对论密度泛函理论在广义梯度近似下研究TbSi_n (n=2-13)团簇的结构、稳定性、电子和磁学性质. 对团簇的平均结合能、离解能、电荷转移、最高占据分子轨道(HOMO)和最低未占据分子轨道(LUMO)的能级差、Mulliken 电荷分析和磁学性质进行了计算和讨论. TbSi_n团簇并没有像实验推测的那样在n=10形成嵌入式的结构. 我们推断电子亲和势的急剧变化不仅与嵌入式的结构有关, 而且与电子的固有稳定性相关.Mulliken 电荷分析表明电荷总是从Tb 原子转向Si 原子. 团簇的磁矩主要局域在Tb 原子的周围, 并且主要由f电子贡献, f 电子表现出局域性并且不参与化学成键. 以TbSi₁₀为例的分波态密度分析表明Tb与Si 原子间存在很强的sp轨道杂化.     

Pb_mTe_n(m+n≤6)团簇的结构与稳定性(英文)

采用密度泛函理论(DFT)的B3LYP方法,在SDD基组水平上对PbmTen(m+n≤6)团簇的几何结构、平均原子键能、离解能及HOMO-LUMO能隙进行了计算分析.结果表明:纯Pb团簇比纯Te团簇稳定,PbnTe比PbTen(n=2-5)稳定,PbnTe2比Pb2Ten(n=3-4)更加稳定;混合团簇PbmTen的HOMO-LUMO能隙在1.87-3.55eV之间,表明该团簇具有半导体性质;在所有团簇中,PbTe团簇最稳定.     

Structural and electronic properties of Si n, Si n+, and AlSi n-1 (n=2-13) clusters: theoretical investigation based on ab initio molecular orbital theory

The geometric and electronic structures of Si(n), Si(n) (+), and AlSi(n-1) clusters (2< or =n< or =13) have been investigated using the ab initio molecular orbital theory under the density functional theory formalism. The hybrid exchange-correlation energy function (B3LYP) and a standard split-valence basis set with polarization functions [6-31G(d)] were employed for this purpose. Relative stabilities of these clusters have been analyzed based on their binding energies, second difference in energy (Delta (2)E) and fragmentation behavior. The equilibrium geometry of the neutral and charged Si(n) clusters show similar structural growth. However, significant differences have been observed in the electronic structure leading to their different stability pattern. While for neutral clusters, the Si(10) is magic, the extra stability of the Si(11) (+) cluster over the Si(10) (+) and Si(12) (+) bears evidence for the magic behavior of the Si(11) (+) cluster, which is in excellent agreement with the recent experimental observations. Similarly for AlSi(n-1) clusters, which is isoelectronic with Si(n) (+) clusters show extra stability of the AlSi(10) cluster suggesting the influence of the electronic structures for different stabilities between neutral and charged clusters. The ground state geometries of the AlSi(n-1) clusters show that the impurity Al atom prefers to substitute for the Si atom, that has the highest coordination number in the host Si(n) cluster. The fragmentation behavior of all these clusters show that while small clusters prefers to evaporate monomer, the larger ones dissociate into two stable clusters of smaller size.     

Geometries, stabilities, and electronic properties of different-sized ZrSi(n) (n=1-16) clusters: a density-functional investigation

The ZrSi(n) (n=1-16) clusters with different spin configurations have been systematically investigated by using the density-functional approach. The total energies, equilibrium geometries, growth-pattern mechanisms, natural population analysis, etc., are discussed. The equilibrium structures of different-sized ZrSi(n) clusters can be determined by two evolution patterns. Theoretical results indicate that the most stable ZrSi(n) (n=1-7) geometries, except ZrSi3, keep the analogous frameworks as the lowest-energy or the second lowest-energy Si(n+1) clusters. However, for large ZrSi(n) (n=8-16) clusters, Zr atom obviously disturbs the framework of silicon clusters, and the localized position of the transition-metal (TM) Zr atom gradually varies from the surface insertion site to the concave site of the open silicon cage and to the encapsulated site of the sealed silicon cage. It should be mentioned that the lowest-energy sandwich-like ZrSi12 geometry is not a sealed structure and appears irregular as compared with other TM@Si12 (TM = Re,Ni). The growth patterns of ZrSi(n) (n=1-16) clusters are concerned showing the Zr-encapsulated structures as the favorable geometries. In addition, the calculated fragmentation energies of the ZrSi(n) (n=1-16) clusters manifest that the magic numbers of stabilities are 6, 8, 10, 14, and 16, and that the fullerene-like ZrSi16 is the most stable structure, which is in good agreement with the calculated atomic binding energies of ZrSi(n) (n=8-16) and with available experimental and theoretical results. Natural population analysis shows that the natural charge population of Zr atom in the most stable ZrSi(n) (n=1-16) structures exactly varies from positive to negative at the critical-sized ZrSi8 cluster; furthermore, the charge distribution around the Zr atom appears clearly covalent in character for the small- or middle-sized clusters and metallic in character for the large-sized clusters. Finally, the properties of frontier orbitals and polarizabilities of ZrSi(n) are also discussed.     

Equilibrium geometries, stabilities, and electronic properties of the bimetallic M2-doped Au(n) (M = Ag, Cu; n = 1-10) clusters: comparison with pure gold clusters

The density functional method with relativistic effective core potential has been employed to investigate systematically the geometrical structures, relative stabilities, growth-pattern behaviors, and electronic properties of small bimetallic M(2)Au(n) (M = Ag, Cu; n = 1-10) and pure gold Au(n) (n ≤ 12) clusters. The optimized geometries reveal that M(2) substituted Au(n+2) clusters and one Au atom capped M(2)Au(n-1) structures are dominant growth patterns of the stable alloyed M(2)Au(n) clusters. The calculated averaged atomic binding energies, fragmentation energies, and the second-order difference of energies as a function of the cluster size exhibit a pronounced even-odd alternation phenomenon. The analytic results exhibit that the planar structure Ag(2)Au(4) and Cu(2)Au(2) isomers are the most stable geometries of Ag(2)Au(n) and Cu(2)Au(n) clusters, respectively. In addition, the HOMO-LUMO gaps, charge transfers, chemical hardnesses and polarizabilities have been analyzed and compared further.     

Geometries, stabilities, and electronic properties of small anion Mg-doped gold clusters: a density functional theory study

First-principle density functional theory is used for studying the anion gold clusters doped with magnesium atom. By performing geometry optimizations, the equilibrium geometries, relative stabilities, and electronic and magnetic properties of [Au(n)Mg]? (n = 1-8) clusters have been investigated systematically in comparison with pure gold clusters. The results show that doping with a single Mg atom dramatically affects the geometries of the ground-state Au(n+1)? clusters for n = 2-7. Here, the relative stabilities are investigated in terms of the calculated fragmentation energies, second-order difference of energies, and highest occupied?lowest unoccupied molecular orbital energy gaps, manifesting that the ground-state [Au(n)Mg]? and Au(n+1)? clusters with odd-number gold atoms have a higher relative stability. In particular, it should be noted that the [Au?Mg]? cluster has the most enhanced chemical stability. The natural population analysis reveals that the charges in [Au(n)Mg]? (n = 2-8) clusters transfer from the Mg atom to the Au frames. In addition, the total magnetic moments of [Au(n)Mg]? clusters exhibit an odd-even oscillation as a function of cluster size, and the magnetic effects mainly come from the Au atoms.     

Structural and electronic properties of Si(n), Si(n)-, and PSi(n-1) clusters (2 < or = n < or = 13): Theoretical investigation based on ab initio molecular orbital theory

The geometric and electronic structures of Si(n), Si(n)-, and PSi(n-1) clusters (2 < or = n < or = 13) have been investigated using the ab initio molecular orbital theory formalism. The hybrid exchange-correlation energy functional (B3LYP) and a standard split-valence basis set with polarization functions (6-31+G(d)) were employed to optimize geometrical configurations. The total energies of the lowest energy isomers thus obtained were recalculated at the MP2/aug-cc-pVTZ level of theory. Unlike positively charged clusters, which showed similar structural behavior as that of neutral clusters [Nigam et al., J. Chem. Phys. 121, 7756 (2004)], significant geometrical changes were observed between Si(n) and Si(n)- clusters for n = 6, 8, 11, and 13. However, the geometries of P substituted silicon clusters show similar growth as that of negatively charged Si(n) clusters with small local distortions. The relative stability as a function of cluster size has been verified based on their binding energies, second difference in energy (Delta2 E), and fragmentation behavior. In general, the average binding energy of Si(n)- clusters is found to be higher than that of Si(n) clusters. For isoelectronic PSi(n-1) clusters, it is found that although for small clusters (n < 4) substitution of P atom improves the binding energy of Si(n) clusters, for larger clusters (n > or = 4) the effect is opposite. The fragmentation behavior of these clusters reveals that while small clusters prefer to evaporate monomer, the larger ones dissociate into two stable clusters of smaller size. The adiabatic electron affinities of Si(n) clusters and vertical detachment energies of Si(n)- clusters were calculated and compared with available experimental results. Finally, a good agreement between experimental and our theoretical results suggests good prediction of the lowest energy isomeric structures for all clusters calculated in the present study.     

Density-functional study of structural and electronic properties of Si(n)C(n) (n=1-10) clusters

Density-functional theory with generalized gradient approximation for the exchange-correlation potential has been used to calculate the structural and electronic structure of Si(n)C(n) (n=1-10) clusters. The geometries are found to undergo a structural change from two dimensional to three dimensional when the cluster size n equals 4. Cagelike structures are favored as the cluster size increases. A distinct segregation between the silicon and carbon atoms is observed for these clusters. It is found that the C atoms favor to form five-membered rings as the cluster size n increases. However, the growth motif for Si atoms is not observed. The Si(n)C(n) clusters at n=2, 6, and 9 are found to possess relatively higher stability. On the basis of the lowest-energy geometries obtained, the size dependence of cluster properties such as binding energy, HOMO-LUMO gap, Mulliken charge, vibrational spectrum, and ionization potential has been computed and analyzed. The bonding characteristics of the clusters are discussed.     

Probing Structure,Thermochemistry, Electron Affinity and Magnetic Moment of Dysprosium-doped Silicon Clusters DySi_n(n = 3～10) and Their Anions with Double-hybrid Density Functional Theory

The equilibrium geometries, electronic structures and electronic properties including adiabatic electron affinity(AEA), vertical detachment energy(VDE), simulated photoelectron spectroscopy, HOMO-LUMO gap, charge transfer, and magnetic moment for DySi_n(n = 3~10) clusters and their anions were systematically investigated by using the ABCluster global search technique combined with the B3 LYP and B2 PLYP density functional methods. The results showed that the lowest energy structure of neutral DySi_n(n = 3~10) can be regarded as substituting a Si atom of the ground state structure of Si_(n+1) with a Dy atom. For anions, the extra electron effect on the structure is significant. Starting from n = 6, the lowest energy structures of DySi_n~?(n = 3~10) differ from those of neutral. The ground state is quintuplet electronic state for DySi_n(n = 3~10) excluding DySi_4 and DySi_9, which is a septet electronic state. For anions, the ground state is a sextuplet electronic state. The reliable AEA and VDE of DySi_n(n = 3~10) are reported. Analyses of HOMO-LUMO gaps indicated that doping Dy atom to silicon clusters can improve significantly their photochemical reactivity, especially for DySi_9. Analyses of NPA revealed that the 4 f electrons of Dy in DySi_4, DySi_9, and DySi_n~? with n = 4 and 6~10 participate in bonding. That is, DySi_nbelongs to the AB type. The 4 f electrons of Dy atom provide substantially the total magnetic moments for DySi_n and their anions. The dissociation energies of Ln(Ln = Pr, Sm, Eu, Gd, Ho, and Dy) fromLn Sin and their anions were evaluated to examine the relative stabilities.     

A Gaussian-3 theoretical study of small silicon-lithium clusters: electronic structures and electron affinities of SinLi(-) (n = 2-8)

The molecular structures of neutral Si n Li ( n = 2-8) species and their anions have been studied by means of the higher level of the Gaussian-3 (G3) techniques. The lowest energy structures of these clusters have been reported. The ground-state structures of neutral clusters are "attaching structures", in which the Li atom is bound to Si n clusters. The ground-state geometries of anions, however, are "substitutional structures", which is derived from Si n+1 by replacing a Si atom with a Li (-). The electron affinities of Si n Li and Si n have been presented. The theoretical electron affinities of Si n are in good agreement with the experiment data. The reliable electron affinities of Si n Li are predicted to be 1.87 eV for Si 2Li, 2.06 eV for Si 3Li, 2.01 eV for Si 4Li, 2.61 eV for Si 5Li, 2.36 eV for Si 6Li, 2.21 eV for Si 7Li, and 3.18 eV for Si 8Li. The dissociation energies of Li atom from the lowest energy structures of Si n Li and Si atom from Si n clusters have also been estimated respectively to examine relative stabilities.     

Geometries and stabilities of Ag-doped Si n (n=1-13) clusters: a first-principles study

The structures of AgSi(n) (n=1-13) clusters are investigated using first-principles calculations. Our studies suggest that AgSi(n) clusters with n=7 and 10 are relatively stable isomers and that these clusters prefer to be exohedral rather than endohedral. Moreover, doping leaves the inner core structure of the clusters largely intact. Additionally, the plot of fragmentation energies as a function of silicon atoms shows that the AgSi(n) are favored to dissociate into one Ag atom and Si(n) clusters. Alternative pathways exist for n>7 (except n=11) in which the Ag-Si cluster dissociates into a stable Si(7) and a smaller fragment AgSi(n-7). The AgSi(11) cluster dissociates into a stable Si(10) and a small fragment AgSi. Lastly, our analysis indicates that doping of Ag atom significantly decreases the gaps between the highest occupied molecular orbital and the lowest unoccupied molecular orbital for n>7.     

Density Functional Theory Study of Structure and Electronic Properties ofMgBen (n=2-12) Clusters

Determinations of the lowest energy structures and electronic properties of MgBen (n=2-12) clusters werecarried out by using density-functional theory. It was found that MgBe3 and MgBe9 clusters with higherbinding energy and larger HOMO-LUMO gap are more stable than the neighboring clusters. The electronicproperties from van der Waals to covalent and bulk metallic behavior in MgBen (n=2-12) clusters arediscussed with the evolution of the size, and the data indicates Magnesium-doped Beryllium clusters alreadyearly appear some metallic-like features than host Ben clusters. By analyzing electronic properties of MgBen(n=2-12) clusters, it can be concluded that Mg-doped reduces the stabilities of Be clusters.     

Density Functional Theory Study on the Structural and Electronic Properties of Ge（SiO_2）_n Clusters

The geometry,stability,binding energy and electronic properties of(SiO2)n and Ge(SiO2)n clusters(n = 7) have been investigated by Density functional theory(DFT).The results show that the lowest energy structures of Ge(SiO2)n are obtained by adding one Ge on the end site of the O atom or the Si near end site of the O atom in(SiO2)n.The chemical activation of Ge-(SiO2)n is improved compared with(SiO2)n.The calculated second-order difference of energies and fragmentation energies show that the Ge(SiO2)n clusters with n = 2 or 5 are stable.