REMGa3Ge and RE3Ni3Ga8Ge3 (M = Ni, Co; RE = rare-earth element): new intermetallics synthesized in liquid gallium. X-ray, electron, and neutron structure determination and magnetism

New quaternary intermetallic phases REMGa(3)Ge (1) (RE = Y, Sm, Tb, Gd, Er, Tm; M = Ni, Co) and RE(3)Ni(3)Ga(8)Ge(3) (2) (RE = Sm, Gd) were obtained from exploratory reactions involving rare-earth elements (RE), transition metal (M), Ge, and excess liquid Ga the reactive solvent. The crystal structures were solved with single-crystal X-ray and electron diffraction. The crystals of 1 and 2 are tetragonal. Single-crystal X-ray data: YNiGa(3)Ge, a = 4.1748(10) A, c = 23.710(8) A, V = 413.24(2) A(3), I4/mmm, Z = 4; Gd(3)Ni(3)Ga(8)Ge(3), a = 4.1809(18) A, c = 17.035(11) A, V = 297.8(3) A(3), P4/mmm, Z = 1. Both compounds feature square nets of Ga atoms. The distribution of Ga and Ge atoms in the REMGa(3)Ge was determined with neutron diffraction. The neutron experiments revealed that in 1 the Ge atoms are specifically located at the 4e crystallographic site, while Ga atoms are at 4d and 8g. The crystal structures of these compounds are related and could be derived from the consecutive stacking of disordered [MGa](2) puckered layers, monatomic RE-Ge planes and [MGa(4)Ge(2)] slabs. Complex superstructures with modulations occurring in the ab-plane and believed to be associated with the square nets of Ga atoms were found by electron diffraction. The magnetic measurements show antiferromagnetic ordering of the moments located on the RE atoms at low temperature, and Curie-Weiss behavior at higher temperatures with the values of mu(eff) close to those expected for RE(3+) free ions.     

Structure and bonding in Yb4MgGe4: Yb2+/Yb3+ mixed-valency and charge separation

Reported are the synthesis and the structural characterization of a new derivative of the RE5Tt4 family (RE = Rare-earth; Tt = Tetrel, = Si, Ge, i.e., group 14 element), Yb5-xMgxGe4 (x approximately 1). Crystal data for Yb4.04(1)Mg0.96(1)Ge4 at 23 degrees C: orthorhombic, space group Pnma (No. 62), Z = 4; a = 7.155(2) A, b = 14.769(5) A, c = 7.688(2) A; V = 812.5(4) A3. This phase is an example of a substitution of lanthanide metal (Yb) with a nonmagnetic element (Mg) within this structure type. Its structure can alternatively be described as an intergrowth of the hypothetical Yb2MgGe2, which features flat infinite [MgGe2]4- layers and the hypothetical YbGe with [Ge2]6- dimers. The flat [MgGe2]4- layers propagate in two dimensions (a and c), and they are offset by a distance of 1/4.a with respect to one another and are interspaced with layers of [Ge2]6- dimers and Yb cations filling the space between them. According to the structural and physical property data, Yb4MgGe4 is a heterogeneous mixed-valent compound, i.e. a system where one of the two symmetry-inequivalent Yb sites has atoms in closed-shell Yb2+ configuration, whereas the Yb3+ cations occupy a different crystallographic site.     

Isolation of the new cubic phases RE4FeGa(12-x)Ge(x) (RE = Sm,Tb; x = 2.5) from molten gallium: single-crystal neutron diffraction study of the Ga/Ge distribution

The compounds RE4FeGa(12-x)Ge(x) (RE = Sm, Tb) were discovered in reactions employing molten Ga as a solvent at 850 degrees C. However, the isostructural Y4FeGa(12-x)Ge(x) was prepared from a direct combination reaction. The crystal structure is cubic with space group Imm, Z = 2, and a = 8.657(4) A and 8.5620(9) A for the Sm and Tb analogues, respectively. Structure refinement based on full-matrix least squares on F(o)2 resulted in R1 = 1.47% and wR2 = 4.13% [I > 2(I)] for RE = Sm and R1 = 2.29% and wR2 = 7.12% [I > 2(I)] for RE = Tb. The compounds crystallize in the U4Re7Si6 structure type, where the RE atoms are located on 8c (1/4, 1/4, 1/4) sites and the Fe atoms on 2a (0, 0, 0) sites. The distribution of Ga and Ge in the structure, investigated with single-crystal neutron diffraction on the Tb analogue, revealed that these atoms are disordered over the 12d (1/4, 0, 1/2) and 12e (x, 0, 0) sites. The amount of Ga/Ge occupying the 12d and 12e sites refined to 89(4)/11 and 70(4)/30%, respectively. Transport property measurements indicate that these compounds are metallic conductors. Magnetic susceptibility measurements and M?ssbauer spectroscopy performed on the Tb analogue show a nonmagnetic state for Fe, while the Tb atoms carry a magnetic moment corresponding to a mu(eff) of 9.25 mu(B).     

Hydrothermal preparation,structures, and NLO properties of the rare earth molybdenyl iodates,RE(MoO2)(IO3)4(OH) [RE = Nd,Sm, Eu

The reactions of RE(IO3)3 [RE = Nd, Sm, Eu] with I2O5 and MoO3 in a 1:2:2 molar ratio at 200 degrees C in aqueous media provide access to RE(MoO2)(IO3)4(OH) [RE = Nd (1), Sm (2), Eu (3)] as pure phases as determined from powder X-ray diffraction data. Single crystal X-ray diffraction experiments demonstrate that these compounds are isostructural and crystallize in the chiral and polar space group P2(1). The structures are composed of three-dimensional networks formed from eight-coordinate, square antiprismatic RE3+ cations and MoO2(OH)+ moieties that are bound by bridging iodate anions. The Mo(VI) centers are present in distorted octahedral environments composed of two cis-oxo atoms, a hydroxo group, and three bridging iodate anions arranged in a fac geometry. There are four crystallographically unique iodate anions in the structures of 1-3, one of these is actually present in the form of a IO3+1 polyhedron where a short interaction of 2.285(4) A is formed between the iodate anion and the hydroxo group bound to the Mo(VI) center. This interaction results in significant distortions of the iodate anion similar to those found in tellurites with TeO3+1 units. Two of the four iodate anions are aligned along the polar b-axis, imparting the required polarity to these compounds. Second-harmonic generation (SHG) measurements on sieved powders of 1 show a response of 350 x alpha-quartz. Crystallographic data: 1, monoclinic, space group P2(1), a = 6.9383(5) A, b = 14.0279(9) A, c = 7.0397(5) A, beta = 114.890(1) degrees, Z = 2; 2, monoclinic, space group P2(1), a = 6.9243(6) A, b = 13.963(1) A, c = 7.0229(6) A, beta = 114.681(1) degrees, Z = 2; 3, monoclinic, space group P2(1), a = 6.9169(6) A, b = 13.943(1) A, c = 7.0170(6) A, beta = 114.542(1) degrees, Z = 2.     

Quaternary tellurides with different valent Ge centers: Cs2Ge3M6Te14 (M = Ga, In)

New quaternary tellurides, Cs(2)Ge(3)M(6)Te(14) (M = Ga, In), were discovered by solid-state reactions. These compounds crystallize in space group P3ml (No. 164), with a = b = 8.2475(2) ?, c = 14.2734(8) ?, and V = 840.82(6) ?(3) (Z = 1) for Cs(2)Ge(3)Ga(6)Te(14) (1) and a = b = 8.5404(2) ?, c = 14.6766(8) ?, and V = 927.07(6) ?(3) (Z = 1) for Cs(2)Ge(3)In(6)Te(14) (2). The remarkable structural feature is the novel three-dimensional [Ge(3)M(6)Te(14)](2-) anionic framework made by condensed In(6)Te(14) (or Ga(6)Te(14)) layers that are connected alternately by dimeric Ge(3+)(2)Te(6) units and Ge(2+)Te(6) octahedra along the c direction. The presence of Ge centers with different oxidation states is also supported by the results of the electron localization function calculation and X-ray photoelectron spectroscopy measurement.     

Intermetallic compounds with near Zintl phase behavior: RE2Zn3Ge6 (RE = La, Ce, Pr, Nd) grown from liquid indium

A series of compounds has been discovered while investigating reactions of rare earth, transition metals, and Ge in excess indium. These compounds, RE2Zn3Ge6 (RE = La, Ce, Pr, Nd), are isostructural, crystallizing in the orthorhombic space group Cmcm with lattice parameters a = 5.9691(9) angstroms, b = 24.987(4) angstroms, and c = 5.9575(9) angstroms for La2Zn3Ge6, a = 5.9503(5) angstroms, b = 24.761(2) angstroms, and c = 5.9477(5) angstroms for the Ce analogue, a =5.938(2) angstroms, b = 24.708(8) angstroms, and c = 5.936(2) angstroms for Pr2Zn3Ge6, and a = 5.9094(7) angstroms, b = 24.619(3) angstroms, and c = 5.9063(5) angstroms for the Nd analogue. The structure is composed of PbO-like ZnGe layers and ZnGe4 cage layers and is related to the Ce4Zn8Ge(11-x) structure type. The bonding in the system can be rationalized using the Zintl concept resulting in a material that is expected to be a valence precise semiconductor, although its behavior is more consistent with it being a semimetal, making it an intermediate case. The results of band structure calculations and magnetic measurements of these compounds are discussed.     

New ternary germanides La4Mg5Ge6 and La4Mg7Ge6: crystal structure and chemical bonding

The synthesis, structural characterization, and chemical-bonding peculiarities of the two new polar lanthanum-magnesium germanides La(4)Mg(5)Ge(6) and La(4)Mg(7)Ge(6) are reported. The crystal structures of these intermetallics were determined by single-crystal X-ray diffraction analysis. The La(4)Mg(5)Ge(6) phase crystallizes in the orthorhombic Gd(4)Zn(5)Ge(6) structure type [Cmc2(1), oS60, Z = 4, a = 4.5030(7) ?, b = 20.085(3) ?, c = 16.207(3) ?, wR2 = 0.0451, 1470 F(2) values, 93 variables]. The La(4)Mg(7)Ge(6) phase represents a new structure type with a monoclinic unit cell [C2/m, mS34, Z = 2, a = 16.878(3) ?, b = 4.4702(9) ?, c = 12.660(3) ?, β = 122.25(3)°, wR2 = 0.0375, 1466 F(2) values, 54 variables]. Crystallographic analysis together with linear muffin-tin orbital band structure calculations reveals the presence of strongly bonded 3D polyanionic [Mg-Ge] networks balanced by positively charged La atoms in both stoichiometric compounds. The La(4)Mg(5)Ge(6) compound is related to Zintl phases, showing a prominent density of states pseudogap at the Fermi level. A distinctive feature of the La(4)Mg(5)Ge(6) structure is the presence of Ge-Ge covalent dumbbells; in La(4)Mg(7)Ge(6), the higher Mg content generates a polyanionic network consisting exclusively of Mg-Ge heterocontacts. Nevertheless, the frameworks of the two phases are structurally similar, as is highlighted in this work.     

Structure and properties of Gd3Ge4: the orthorhombic RE3Ge4 structures revisited (RE = Y, Tb-Tm)

The new binary compound Gd(3)Ge(4) has been synthesized and its structure has been determined from single-crystal X-ray diffraction. Gd(3)Ge(4) crystallizes in the orthorhombic space group Cmcm (No. 63) with unit cell parameters a = 4.0953(11) A, b = 10.735(3) A, c = 14.335(4) A, and Z = 4. Its structure can be described as corrugated layers of germanium atoms with gadolinium atoms enclosed between them. The bonding arrangement in Gd(3)Ge(4) can also be derived from that of the known compound GdGe (CrB type) through cleavage of the (infinity)(1)[Ge(2)] zigzag chains in GdGe and a subsequent insertion of an extra germanium atom between the resulting triangular fragments. Formally, these characteristics represent isotypism with the Er(3)Ge(4) type (Pearson's oC28). However, re-examination of the crystallography in the whole RE(3)Ge(4) series (RE = Y, Tb-Tm) revealed discrepancies and called into question the accuracy of the originally determined structures. This necessitated a new rationalization of the bonding, which is provided in the context of a comparative discussion concerning both the original and revised structure models, along with an analysis of the trends across the series. The temperature dependence of the magnetic susceptibility of Gd(3)Ge(4) shows that it is paramagnetic at room temperature and undergoes antiferromagnetic ordering below 29 K. Magnetization, resistivity, and calorimetry data for several other members of the RE(3)Ge(4) family are presented as well.     

Tb4FeGe8 grown in liquid gallium: trans-cis chains from the distortion of a planar Ge square net

The ternary germanide Tb4FeGe8 was obtained from Ga flux reactions. The crystal structure studied with single-crystal X-ray diffraction revealed the existence of an orthorhombic average substructure (Cmcm, Z=1) with cell parameters a = 4.1118(14) A, b=15.844(5) A, and c=3.9885(15) A. The refinement [I > 2sigma(I)] converged to final residuals R1/wR2 = 0.0363/0.0893. The average structure (CeNiSi2-type) consists of a 3D [Fe1/4Ge2] framework where Ge atoms form a square net and Fe atoms reside alternatively above and below it with only 1/4 occupation probability. X-ray and electron diffraction studies showed a modulation in the Ge net. The modulated structure was refined based on a 4-fold monoclinic supercell (P2(1)/n) with parameters a = 5.7315(11) A, b = 15.842(3) A, c = 11.438(2) A, and beta = 91.724(4) degrees with R1/wR2 = 0.0643/0.1735 and uncovered a severe distortion of the Ge square net. The Ge atoms are displaced to form an array of cis-trans chains. The Ge-Ge distances within these chains are distinctively bonding, whereas those between the chains are nonbonding. Results of the electronic structure calculations and magnetic measurements are also reported. The structural distortions found in Tb4FeGe8 cast a doubt onto the correctness of many of the reported REM1-xGe2 disordered compounds and call for reinvestigation.     

Diverse closed cavities in condensed rare earth metal-chalcogenide matrixes: Cs[Lu7Q11] and (ClCs6)[RE21Q34] (RE = Dy, Ho; Q = S, Se, Te)

Two types of novel ordered chalcogenids Cs[Lu(7)Q(11)] (Q = S, Se) and (ClCs(6))[RE(21)Q(34)] (RE = Dy, Ho; Q = S, Se, Te) were discovered by high-temperature solid state reactions. The structures were characterized by single-crystal X-ray diffraction data. Cs[Lu(7)Q(11)] crystallize in the orthorhombic Cmca (no. 64) with a = 15.228(4)-15.849(7) ?, b = 13.357(3)-13.858(6) ?, c = 18.777(5)-19.509(8) ?, and Z = 8. (ClCs(6))[RE(21)Q(34)] crystallize in the monoclinic C2/m (no. 12) with a = 17.127(2)-18.868(2) ?, b = 19.489(2)-21.578(9) ?, c = 12.988(9)-14.356(2) ?, β = 128.604(2)-128.738(4)°, and Z = 2. Both types of compounds feature 3D RE-Q network structures that embed with dual tricapped cubes Cs(2)@Se(18) in the former or unprecedented matryoshka nesting doll structure cavities of (ClCs(6))@Se(32) in the latter. The band gap, band structure, as well as a structure change trend of the majority of A/RE/Q compounds are presented.     

Yb3AuGe2In3: an ordered variant of the YbAuIn structure exhibiting mixed-valent Yb behavior

Yb(3)AuGe(2)In(3) was obtained as large single crystals in high yield from reactions run in liquid indium. Single crystal X-ray diffraction data show that Yb(3)AuGe(2)In(3) is an ordered variant of YbAuIn with lattice constants, a = b = 7.3153(8) ? and c = 4.4210(5) ?, and space group P(6)2m. The parent compound YbAuIn was also studied for comparison. YbAuIn crystallizes in the ZrNiAl structure type, hexagonal, P(6)2m space group with lattice parameters a = b = 7.7127(11) ? and c = 4.0294(8) ?. In Yb(3)AuGe(2)In(3), Ge substitutes for one of the two Au positions in the ternary compound Yb(3)Au(3)In(3). The structure can be described as alternating [Ge(2)In(3)] and [Yb(3)Au] slabs that stack along the c-axis. The magnetic susceptibility data follow a modified Curie-Weiss law. The effective magnetic moment μ(eff) of 0.52 μ(B)/Yb atom was deduced from the Curie constant and Curie-Weiss constant of θ(p) = -1.5 K indicating antiferromagnetic interactions in Yb(3)AuGe(2)In(3). X-ray absorption near edge spectroscopy (XANES) measurements indicate intermediate valency for Yb in both compounds. The metallic nature of both compounds was confirmed by the resistivity measurements. Specific heat data for Yb(3)AuGe(2)In(3) and YbAuIn give an electronic γ term of 31 and 84 mJ/mol·K(2), respectively, suggesting that the ternary analog is a "light" heavy fermion compound.     

Polygallide RE2MGa9Ge2 (RE = Ce, Sm; M = Ni, Co) phases grown in molten gallium

The quaternary intermetallics Ce2CoGa9Ge2, Ce2NiGa9Ge2, and Sm2NiGa9Ge2 were prepared by reacting elemental metals in excess of gallium at 850 degrees C. The title compounds crystallize in the tetragonal space group P4/nmm in the Sm2Ni(Si(1-x)Ni(x))Al4Si6 structure type with cell parameters a = 5.9582(5) A, c = 15.0137(18) A, and a = 5.9082(17) A, c = 14.919(6) A, Z = 2, for Ce2CoGa9Ge2 and Sm2NiGa9Ge2, respectively. The structures are composed of covalently bonded three-dimensional networks of [CoGa9Ge2] in which the rare-earth metals fill the voids forming a 2D square net. The structures of RE2MGa9Ge2 are Ga-rich and possess extensive Ga-Ga bonding even though the Ga atoms do not form a network on their own. Magnetic susceptibility measurements for Ce2CoGa9Ge2 and Ce2NiGa9Ge2 show Curie-Weiss paramagnetism, consistent with presence of Ce(3+) ions. Magnetocrystalline anisotropy was observed for Ce2NiGa9Ge2, with the magnetically easy axis lying along the [001] crystallographic direction. A transition to an antiferromagnetic state was observed below 4 K in the easy direction of magnetization. In the magnetically hard direction of the basal plane, paramagnetic behavior was observed down to 1.8 K.     

Synthesis, crystal chemistry, and magnetic properties of RE7Li8Ge10 and RE11Li12Ge16 (RE = La-Nd, Sm): new members of the [REGe2](n)[RELi2Ge](m) homologous series

Eight new rare-earth metal-lithium-germanides belonging to the [REGe(2)](n)[RELi(2)Ge](m) homologous series have been synthesized and structurally characterized by single-crystal X-ray diffraction. The structures of the title compounds can be rationalized as linear intergrowths of imaginary RELi(2)Ge (MgAl(2)Cu structure type) and REGe(2) (AlB(2) structure type) slabs. The compounds with general formula RE(7)Li(8)Ge(10) (RE = La-Nd, Sm), i.e., [REGe(2)](3)[RELi(2)Ge](4), crystallize in the orthorhombic space group Cmmm (No. 65) with a new structure type. Similarly, the compounds with general formula RE(11)Li(12)Ge(16) (RE = Ce-Nd), i.e., [REGe(2)](5)[RELi(2)Ge](6), crystallize in the orthorhombic space group Immm (No. 71) also with its own structure type. Temperature-dependent DC magnetization measurements indicate Curie-Weiss paramagnetism in the high-temperature regime and hint at complex magnetic ordering at low temperatures. The measured effective moments are consistent with RE(3+) ground states in all cases. The experimental results have been complemented by tight-binding linear muffin-tin orbital (TB-LMTO) electronic structure calculations.     

New quaternary bismuth sulfides: syntheses,structures, and band structures of AMBiS4 (A = Rb,Cs; M = Si,Ge)

Four new compounds, RbSiBiS(4), RbGeBiS(4), CsSiBiS(4), and CsGeBiS(4), have been synthesized by means of the reactive flux method. The isostructural compounds RbSiBiS(4), RbGeBiS(4), and CsGeBiS(4) crystallize in space group P2(1)/c of the monoclinic system with four formula units in cells of dimensions at 153 K of a = 6.4714(4) A, b = 6.7999(4) A, c = 17.9058(11) A, and beta = 108.856(1) degrees for RbSiBiS(4), a = 6.5864(4) A, b = 6.8559(4) A, c = 17.9810(12) A, and beta = 109.075(1) degrees for RbGeBiS(4), and a = 6.5474(4) A, b = 6.9282(4) A, c = 18.8875(11) A, and beta = 110.173(1) degrees for CsGeBiS(4). CsSiBiS(4) crystallizes in a different structure type in space group P2(1)/c of the monoclinic system with four formula units in a cell of dimensions at 153 K of a = 9.3351(7) A, b = 6.9313(5) A, c = 12.8115(10) A, and beta = 109.096(1) degrees. The two structure types are closely related and consist of [MBiS(4)(-)] (M = Si, Ge) layers separated by bicapped trigonal-prismatically coordinated alkali-metal atoms. In each, the M atom is coordinated to a tetrahedron of four S atoms and the Bi atom is coordinated to seven S atoms comprising five close S atoms at the corners of a square pyramid with Bi near the center of the basal plane and the sixth and seventh S atoms further away to complete a distorted monocapped trigonal prism. The optical band gaps of 2.23 eV for RbGeBiS(4) and 2.28 eV for CsGeBiS(4) were deduced from their diffuse reflectance spectra. From a band structure calculation, the optical absorption for RbGeBiS(4) originates from the [GeBiS(4)(-)] layer. The Ge 4p orbitals, Bi 6p orbitals, and S 3p orbitals are highly hybridized.     

Indium flux synthesis of RE4Ni2InGe4 (RE = Dy, Ho, Er, and Tm): an ordered quaternary variation on the binary phase Mg5Si6

The quaternary compounds RE4Ni2InGe4 (RE = Dy, Ho, Er, and Tm) were obtained as large single crystals in high yields from reactions run in liquid In. The title compounds crystallize in the monoclinic C2/m space group with the Mg(5)Si(6) structure type with lattice parameters a = 15.420(2) A, b = 4.2224(7) A, c = 7.0191(11) A, and beta = 108.589(2) degrees for Dy4Ni2InGe4, a = 15.373(4) A, b = 4.2101(9) A, c = 6.9935(15) A, and beta = 108.600(3) degrees for Ho4Ni2InGe4, a = 15.334(7) A, b = 4.1937(19) A, c = 6.975(3) A, and beta =108.472(7) degrees for Er4Ni2InGe4, and a = 15.253(2) A, b = 4.1747(6) A, c = 6.9460(9) A, and beta = 108.535(2) degrees for Tm4Ni2InGe4. RE4Ni2InGe4 formed in liquid In from a melt that was rich in the rare-earth component. These compounds are polar intermetallic phases with a cationic rare-earth substructure embedded in a transition metal and main group matrix. The rare-earth atoms form a highly condensed network, leading to interatomic distances that are similar to those found in the elemental lanthanides themselves. The Dy and Ho analogues display two maxima in the susceptibility, suggesting antiferromagnetic ordering behavior and an accompanying spin reorientation. The Er analogue shows only one maximum in the susceptibility, and no magnetic ordering was observed for the Tm compound down to 2 K.     

Closely related rare-earth metal germanides RE2Li2Ge3 and RE3Li4Ge4 (RE = La-Nd, Sm): synthesis, crystal chemistry, and magnetic properties

Reported are the syntheses, crystal structures, and magnetic susceptibilities of two series of closely related rare-earth metal-lithium germanides RE(2)Li(2)Ge(3) and RE(3)Li(4)Ge(4) (RE = La-Nd, Sm). All title compounds have been synthesized by reactions of the corresponding elements at high temperatures, and their structures have been established by single-crystal X-ray diffraction. RE(2)Li(2)Ge(3) phases crystallize in the orthorhombic space group Cmcm (No. 63) with the Ce(2)Li(2)Ge(3) structure type, while the RE(3)Li(4)Ge(4) phases crystallize in the orthorhombic space group Immm (No. 71) with the Zr(3)Cu(4)Si(4) structure type, respectively. Both of their structures can be recognized as the intergrowths of MgAl(2)Cu- and AlB(2)-like slabs, and these traits of the crystal chemistry are discussed. Temperature-dependent direct-current magnetization measurements indicate Curie-Weiss paramagnetism in the high-temperature regime for RE(2)Li(2)Ge(3) and RE(3)Li(4)Ge(4) (RE = Ce, Pr, Nd), while Sm(2)Li(2)Ge(3) and Sm(3)Li(4)Ge(4) exhibit Van Vleck-type paramagnetism. The data are consistent with the local-moment magnetism expected for RE(3+) ground states. At temperatures below ca. 20 K, magnetic ordering transitions have been observed. The experimental results have been complemented by tight-binding linear muffin-tin orbital electronic-band-structure calculations.     

Coordination of lanthanide triflates and perchlorates with N,N,N',N'-tetramethylsuccinamide

Compounds formed from the reaction of N,N,N',N'-tetramethylsuccinamide (TMSA) with trivalent lanthanide salts possessing the poorly coordinating counteranions triflate (CF3SO3-) and perchlorate (ClO4-) have been prepared and examined. Structural features of these Ln-TMSA compounds have been studied in the solid phase by thermogravimetric analysis, infrared spectroscopy, and, in selected cases, by single-crystal X-ray diffraction and in solution by infrared spectroscopy. Eight-coordinate compounds, [Ln(TMSA)4]3+, derived from coordination of four succinamide ligands to the metal ion could be formed with all lanthanides examined (Ln = La, Pr, Nd, Eu, Yb, Lu). Structural analyses by single-crystal X-ray diffraction were performed for the lanthanide triflate salts Ln(C8H16N2O2)4(CF3SO3)3: Ln = La, compound 1, monoclinic, P2(1)/n, a = 11.0952(2) A, b = 19.2672(2) A, c = 24.9759(3) A, beta = 90.637(1) degrees, Z = 4, Dcalcd = 1.586 g cm-3; Ln = Nd, compound 2, monoclinic, C2/c, a = 24.6586(10) A, b = 19.3078(7) A, c = 11.1429(4) A, beta = 90.450(1) degrees, Z = 4, Dcalcd = 1.603 g cm-3; Ln = Eu, compound 3, monoclinic, C2/c, a = 24.4934(2) A, b = 19.3702(1) A, c = 11.1542(1) A, beta = 90.229(1) degrees, Z = 4, Dcalcd = 1.617 g cm-3; Ln = Lu, compound 5, monoclinic, C2/c, a = 24.2435(4) A, b = 19.6141(2) A, c = 11.2635(1) A, beta = 90.049(1) degrees, Z = 4, Dcalcd = 1.626 g cm-3. X-ray analysis was also carried out for the perchlorate salt: Ln = Eu, compound 4, triclinic, P1, a = 10.9611(2) A, b = 14.6144(3) A, c = 15.7992(2) A, alpha = 106.594(1) degrees, beta = 91.538(1) degrees, gamma = 90.311(1) degrees, Z = 2, Dcalcd = 1.561 g cm-3. In the presence of significant amounts of water, 7-coordinate compounds with mixed aquo-TMSA cation structures [Ln(TMSA)3(H2O)]3+ (Ln = Yb) and [Ln(TMSA)2(H2O)3]3+ (Ln = La, Pr, Nd, Eu, Yb) have been isolated with structural determinations by single-crystal X-ray diffraction obtained for the following species: Yb(C8H16N2O2)3(H2O)(CF3SO3)3, compound 6, monoclinic, P2(1)/n, a = 8.9443(3) A, b = 11.1924(4) A, c = 44.2517(13) A, beta = 93.264(1) degrees, Z = 4, Dcalcd = 1.735 g cm-3; Yb(C8H16N2O2)3(H2O)(ClO4)3, compound 7, monoclinic, Cc, a = 19.2312(6) A, b = 11.1552(3) A, c = 19.8016(4) A, beta = 111.4260(1) degrees, Z = 4, Dcalcd = 1.690 g cm-3; Yb(C8H16N2O2)2(H2O)3(CF3SO3)3, compound 8, triclinic, P1, a = 8.6719(1) A, b = 12.2683(2) A, c = 19.8094(3) A, alpha = 75.815(1) degrees, beta = 86.805(1) degrees, gamma = 72.607(1) degrees, Z = 2, Dcalcd = 1.736 g cm-3. Unlike in the analogous nitrate salts, only bidentate binding of the succinamide ligand to the lanthanide metal is observed. IR spectroscopy studies in anhydrous acetonitrile suggest that the solid-state structures of these Ln-TMSA compounds are maintained in solution.     

New metalloligands [M(SC[O]Ph)(4)](-): synthesis and characterization of polymeric [A(MeCN)(x)[M(SC[O]Ph)(4)]] compounds (A = Li,Na and K; M = Ga and In; x = 0-2)

Exploiting the ability of the [M(SC[O]Ph)(4)](-) anion to behave like an anionic metalloligand, we have synthesized [Li[Ga(SC[O]Ph)(4)]] (1), [Li[In(SC[O]Ph)(4)]] (2), [Na[Ga(SC[O]Ph)(4)]] (3), [Na(MeCN)[In(SC[O]Ph)(4)]] (4), [K[Ga(SC[O]Ph)(4)]] (5), and [K(MeCN)(2)[In(SC[O]Ph)(4)]] (6) by reacting MX(3) and PhC[O]S(-)A(+) (M = Ga(III) and In(III); X = Cl(-) and NO(3)(-); and A = Li(I), Na(I), and K(I)) in the molar ratio 1:4. The structures of 2, 4, and 6 determined by X-ray crystallography indicate that they have a one-dimensional coordination polymeric structure, and structural variations may be attributed to the change in the alkali metal ion from Li(I) to Na(I) to K(I). Crystal data for 2 x 0.5MeCN x 0.25H(2)O: monoclinic space group C2/c, a = 24.5766(8) A, b = 13.2758(5) A, c = 19.9983(8) A, beta = 108.426(1) degrees, Z = 8, and V = 6190.4(4) A(3). Crystal data for 4: monoclinic space group P2(1)/c, a = 10.5774(7) A, b = 21.9723(15) A, c = 14.4196(10) A, beta = 110.121(1) degrees, Z = 4, and V = 3146.7(4) A(3). Crystal data for 6: monoclinic space group P2(1)/c, a = 12.307(3) A, b = 13.672(3) A, c = 20.575(4) A, beta = 92.356(4) degrees, Z = 4, and V = 3458.8(12) A(3). The thermal decomposition of these compounds indicated the formation of the corresponding AMS(2) materials.     

Synthesis and characterization of four new europium group XIV chalcogenides: K(2)EuTSe(5) and KEuTS(4) (T = Si, Ge)

Four europium group XIV chalcogenides have been synthesized using the reactive flux method: K(2)EuTSe(5) (I, II) and KEuTS(4) (III, IV) where T = Si, Ge. K(2)EuSiSe(5), I, crystallizes in the monoclinic space group P2(1)/c with cell parameters a = 11.669(3) A, b = 9.844(2) A, c = 8.917(2) A, beta = 91.583(5) degrees, and Z = 4. K(2)EuGeSe(5), II, crystallizes in the monoclinic space group P2(1)/c with cell parameters a = 11.8056(3) A, b = 9.9630(1) A, c = 8.9456(1) A, beta = 91.195(1) degrees, and Z = 4. Both K(2)EuSiSe(5) and K(2)EuGeSe(5) are semiconductors with optical band-gaps of approximately 2.00 and 1.84 eV, respectively. Raman spectroscopy shows vibrations from the (TSe(5))(4-) (T = Si, Ge) unit. KEuSiS(4), III, crystallizes in the monoclinic space group P2(1) with cell parameters a = 6.426(4) A, b = 6.582(5) A, c = 8.566(7) A, beta = 107.83(6) degrees, and Z = 2. KEuGeS(4), IV, crystallizes in the monoclinic space group P2(1) with cell parameters a = 6.510(2) A, b = 6.649(2) A, c = 8.603(3) A, beta = 107.80(2) degrees, and Z = 2. Band-gap analysis shows that both compounds are semiconductors with optical band-gaps of 1.72 and 1.71 eV, respectively. The Raman spectrum of KEuGeS(4) shows the vibrations of the (GeS(4))(4-) unit. Fluorescence spectroscopy confirms the presence of Eu(III) in III and IV instead of Eu(II) as in I and II. These four crystalline products were formed under equivalent stoichiometric reaction conditions. The fact that two different products are observed can be used to understand the relationship between the oxidative and reductive potentials within these flux reactions.     

Layered rare-earth gallium antimonides REGaSb(2) (RE = La--Nd, Sm).

The ternary rare-earth gallium antimonides, REGaSb(2) (RE = La--Nd, Sm), have been synthesized through reaction of the elements. The structures of SmGaSb(2) (orthorhombic, space group D(5)(2)-C222(1), Z = 4, a = 4.3087(5) A, b = 22.093(4) A, c = 4.3319(4) A) and NdGaSb(2) (tetragonal, space group D(19)(4h)-I4(1)/amd, Z = 8, a = 4.3486(3) A, c = 44.579(8) A) have been determined by single-crystal X-ray diffraction. The SmGaSb(2)-type structure is adopted for RE = La and Sm, whereas the NdGaSb(2)-type structure is adopted for RE = Ce--Nd. The layered SmGaSb(2) and NdGaSb(2) structures are stacking variants of each other. In both structures, two-dimensional layers of composition (2)(infinity)[GaSb] are separated from square nets of Sb atoms [Sb] by RE atoms. Alternatively, the structures may be considered as resulting from the insertion of zigzag Ga chains between (2)(infinity)[RE Sb(2)] slabs. In SmGaSb(2), all of the Ga chains are parallel and the (2)(infinity)[SmSb(2)] layers are stacked in a ZrSi(2)-type arrangement. In NdGaSb(2), the Ga chains alternate in direction, resulting in a doubling of the long axis relative to SmGaSb(2), and the (2)(infinity)[NdSb(2)] layers are stacked in a Zr(3)Al(4)Si(5)-type arrangement. Extended Hückel band structure calculations are used to explain the bonding in the [GaSb(2)](3-) substructure.